Abstract: A pattern forming method includes forming a coating film containing a hydrophilic first homopolymer having a first bonding group and a hydrophobic second homopolymer having a second bonding group capable of bonding with the first bonding group, forming a bond between the first and second bonding group to produce a block copolymer of the first and second homopolymers, and heating the coating film to microphase-separating the copolymer into a hydrophilic domain and a hydrophobic domain. The hydrophilic and hydrophobic domains are arranged alternately. The bond is broken, then selectively dissolving-removing either domain by a solvent to provide a polymer pattern of a remainder domain.

Abstract: A self-assembled pattern forming method in an embodiment includes: forming a guide pattern on a substrate; forming a layer of a first polymer; filling a first block copolymer; and phase-separating the first block copolymer. The guide pattern includes a first recessed part having a depth T and a diameter D smaller than the depth T, and a second recessed part having a width larger than double of the diameter D. The first block copolymer has the first polymer and a second polymer which are substantially the same in volume fraction. By phase-separating the first block copolymer, a cylinder structure and a lamellar structure are obtained.

Abstract: In one embodiment, there are provided: a substrate; a data area disposed on the substrate and having a plurality of first magnetic dots arrayed in lines in mutually different first, second, and third directions; and a boundary magnetic part having a plurality of first magnetic portions arrayed in a line in the third direction and each having a length longer than that of the first magnetic dot in the third direction, and a second magnetic dot disposed between the first magnetic portions and disposed on extensions in the first and second directions of the first magnetic dots, and disposed along with the data area on the substrate.

Abstract: In one embodiment, a method of manufacturing a mold includes: forming a first layer having an affinity to a second polymer on a substrate having an affinity to a first polymer; forming first and second openings in the first layer; filling a resist in the second openings and hardening the resist to obtain a hardened resist; and forming a second layer containing a block copolymer and causing it to self-assemble.

Abstract: A pattern forming method according to an embodiment includes: forming a pattern film on a first substrate, the pattern film having a concave-convex pattern, the pattern film being made of a material containing a first to-be-imprinted agent; forming a material film on a second substrate, the material film containing a second to-be-imprinted agent having a higher etching rate than an etching rate of the first to-be-imprinted agent; transferring the concave-convex pattern of the pattern film onto the material film by applying pressure between the first substrate and the second substrate, with the pattern film being positioned to face the material film, and by curing the second to-be-imprinted agent; detaching the first substrate from the pattern film; and removing the material film by etching, to leave the pattern film on the second substrate.

Abstract: A magnetic disk according to an embodiment includes: a plurality of data regions each including a plurality of tracks, each of the tracks being arranged to extend in a circumferential direction; a servo region provided between the data regions, the servo region extending in a radial direction, the servo region including: a plurality of guide patterns each extending in the radial direction; and at least one line of dots arranged by post patterns in the radial direction at least on a side of one of adjacent guide patterns, the post patterns being arranged in the radial direction between the adjacent guide patterns.

Abstract: In one embodiment, a pattern forming method includes: forming a functional layer having a functional group to cross-link a first polymer on a substrate; forming a diblock copolymer layer having the first polymer and a second polymer on the functional layer; self-assembling the diblock copolymer layer to form a self-assembled layer, the self-assembled layer having a first domain corresponding to the first polymer, and a plurality of second domains corresponding to the second polymer and surrounded by or interposed in the first domain; cross-linking the first polymer in the self-assembled layer with the functional group in the functional layer to form a bonding layer disposed in the self-assembled layer and bonded to the functional layer; and washing or etching the self-assembled layer to remain the bonding layer.

Abstract: An imprint method according to this embodiment includes preparing a mold having a recessed portion, filling the recessed portion with a mold non-reactive material, pressing the mold against a resist which is applied on a base material, curing the resist in a state that the mold is pressed, and separating the mold from the base material. The mold non-reactive material is a material which does not chemically react with a material of the mold. By curing of the resist, the resist and the mold non-reactive material are coupled. When the mold is separated from the base material, the resist and the mold non-reactive material are left on the base material.

Abstract: A self-assembled pattern forming method in an embodiment includes: forming a guide pattern on a substrate; forming a layer of a first polymer; filling a first block copolymer; and phase-separating the first block copolymer. The guide pattern includes a first recessed part having a depth T and a diameter D smaller than the depth T, and a second recessed part having a width larger than double of the diameter D. The first block copolymer has the first polymer and a second polymer which are substantially the same in volume fraction. By phase-separating the first block copolymer, a cylinder structure and a lamellar structure are obtained.

Abstract: In one embodiment, there are provided: a substrate; a data area disposed on the substrate and having a plurality of first magnetic dots arrayed in lines in mutually different first, second, and third directions; and a boundary magnetic part having a plurality of first magnetic portions arrayed in a line in the third direction and each having a length longer than that of the first magnetic dot in the third direction, and a second magnetic dot disposed between the first magnetic portions and disposed on extensions in the first and second directions of the first magnetic dots, and disposed along with the data area on the substrate.

Abstract: In one embodiment, a pattern forming method includes: forming a functional layer having a functional group to cross-link a first polymer on a substrate; forming a diblock copolymer layer having the first polymer and a second polymer on the functional layer; self-assembling the diblock copolymer layer to form a self-assembled layer, the self-assembled layer having a first domain corresponding to the first polymer, and a plurality of second domains corresponding to the second polymer and surrounded by or interposed in the first domain; cross-linking the first polymer in the self-assembled layer with the functional group in the functional layer to form a bonding layer disposed in the self-assembled layer and bonded to the functional layer; and washing or etching the self-assembled layer to remain the bonding layer.

Abstract: A magnetic disk according to an embodiment includes: a plurality of data regions each including a plurality of tracks, each of the tracks being arranged to extend in a circumferential direction; a servo region provided between the data regions, the servo region extending in a radial direction, the servo region including: a plurality of guide patterns each extending in the radial direction; and at least one line of dots arranged by post patterns in the radial direction at least on a side of one of adjacent guide patterns, the post patterns being arranged in the radial direction between the adjacent guide patterns.

Abstract: A pattern forming method according to an embodiment includes: forming a pattern film on a first substrate, the pattern film having a concave-convex pattern, the pattern film being made of a material containing a first to-be-imprinted agent; forming a material film on a second substrate, the material film containing a second to-be-imprinted agent having a higher etching rate than an etching rate of the first to-be-imprinted agent; transferring the concave-convex pattern of the pattern film onto the material film by applying pressure between the first substrate and the second substrate, with the pattern film being positioned to face the material film, and by curing the second to-be-imprinted agent; detaching the first substrate from the pattern film; and removing the material film by etching, to leave the pattern film on the second substrate.

Abstract: In one embodiment, a method of manufacturing a mold includes: forming a first layer having an affinity to a second polymer on a substrate having an affinity to a first polymer; forming first and second openings in the first layer; filling a resist in the second openings and hardening the resist to obtain a hardened resist; and forming a second layer containing a block copolymer and causing it to self-assemble.

Abstract: A structure includes a substrate, a first layer formed on the substrate, and a second layer formed on the first layer. The first layer is comprised of self-assembled monolayer and contains 4-(6-hydroxyhexyloxy)-4?-methoxybiphenyl. The second layer is obtained by micro-phase separation of a block copolymer containing a hydrophilic polymer comprised of polyethylene oxide and a hydrophobic polymer comprised of polymethacrylic acid containing azobenzene at the side chain. The second layer contains a cylinder phase with its long axis being oriented perpendicular to the substrate. The thickness T of the second layer is within a range of A?T?50 nm, where A is a phase separation period length satisfying 5 nm?A?50 nm.

Abstract: According to one embodiment, a servo area of a magnetic recording medium includes magnetic dots arrayed at a period L0. The magnetic dots include a plurality of magnetic dot regions divided in the cross track direction. A width Wm in the down track direction of the mth magnetic dot region from the innermost circumference and a number Nm of dot rows in the down track direction of the mth region meet a relationship represented by L0{Nm?3/2?0.3}?Wm?L0{Nm?3/2+0.3}??(1).

Abstract: A pattern forming method includes forming a coating film containing a hydrophilic first homopolymer having a first bonding group and a hydrophobic second homopolymer having a second bonding group capable of bonding with the first bonding group, forming a bond between the first and second bonding group to produce a block copolymer of the first and second homopolymners, and heating the coating film to microphase-separating the copolymer into a hydrophilic domain and a hydrophobic domain. The hydrophilic and hydrophobic domains are arranged alternately. The bond is broken, then selectively dissolving-removing either domain by a solvent to provide a polymer pattern of a remainder domain.

Abstract: A structure includes a substrate, a first layer formed on the substrate, and a second layer formed on the first layer. The first layer is comprised of a self-assembled monolayer and contains 4-(6-hydroxyhexyloxy)-4?-methoxybiphenyl. The second layer is obtained by micro-phase separation of a block copolymer containing a hydrophilic polymer comprised of polyethylene oxide and a hydrophobic polymer comprised of polymethacrylic acid containing azobenzene at the side chain. The second layer contains a cylinder phase with its long axis being oriented perpendicular to the substrate. The thickness T of the second layer is within a range of A?T?50 nm, where A is a phase separation period length satisfying 5 nm?A?50 nm.

Abstract: A method of forming a fine pattern according to an embodiment includes: forming a hard mask on a substrate; forming a mask reinforcing member on the hard mask; forming a di-block copolymer layer on the mask reinforcing member, the di-block copolymer layer comprising a sea-island structure; forming a pattern comprising a concave-convex structure in the di-block copolymer layer, with island portions of the sea-island structure being convex portions; and transferring the pattern onto the hard mask by performing etching on the mask reinforcing member and the hard mask, with a mask being the pattern formed in the di-block copolymer layer. The mask reinforcing member is comprised of a material having an etching speed that is higher than an etching speed for the hard mask and is lower than an etching speed for sea portions of the sea-island structure of the di-block copolymer layer.

Abstract: A pattern forming method is provided, which includes forming, above a substrate, a layer of a diblock copolymer composition containing at least PS and PEO, subjecting the layer to phase separation to obtain a phase-separated layer, thereby forming an easy-to-etch region constituted by PS and having a cylindrical or lamellar configuration extending in a first direction, forming an imprinting resist layer on the phase-separated layer, subjecting the imprinting resist layer to imprinting to form, on the imprinting resist layer, an uneven pattern consisting of projections and recesses extending in a second direction intersecting with the first direction, selectively removing, from the imprinting resist layer, the recesses, thereby leaving only the projections and, at the same time, selectively removing the PS from the phase-separated layer to obtain an etching resistive pattern containing PEO, and etching the substrate using, as a mask, not only the projections but also the etching resistive pattern.