Patents by Inventor Oleg Drapkin
Oleg Drapkin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6665354Abstract: An integrated circuit receiver includes a differential input receiver having a plurality of differential input transistors. A variable well voltage supply circuit varies the well voltages of the differential input transistors to change the input transistors threshold voltages to provide hysteresis control by varying well voltages of input transistors in opposite directions. A method for reducing noise for an integrated circuit receiver includes receiving an input signal by a differential input receiver, and changing into opposite directions the input transistors threshold voltages to provide hysteresis control by varying the first and second well voltages associated with each of a first differential input transistor and a second differential input transistor. At least one feedback signal is used from the differential input receiver as input to the variable well voltage supply circuit to vary the first and second well voltages to facilitate hysteresis control of the differential input receiver.Type: GrantFiled: September 2, 1999Date of Patent: December 16, 2003Assignee: ATI International SRLInventors: Oleg Drapkin, Grigori Temkine
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Publication number: 20030215033Abstract: A digitally programmable gain control circuit and method of operating the same is disclosed. The gain control circuit includes a programmable gain amplifier having an amplifier structure represented by a plurality of discrete monotonic transfer functions, wherein a point of non-monotonicity occurs between at least a plurality of the discrete monotonic transfer functions, and a gain segment translator circuit operative to translate a binary monotonic gain control code to a segmented binary code to match the non-monotonic characteristics of the programmable gain amplifier. The programmability of the gain amplifier is provided by a coarse gain control circuit and a fine gain control circuit.Type: ApplicationFiled: May 20, 2002Publication date: November 20, 2003Inventors: Oleg Drapkin, Antonio Rinaldi, Mikhall Rodionov, Grigori Temkine, Michael Foxcroft, Edward G. Callway
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Patent number: 6642800Abstract: A spurious-free fractional-N frequency synthesizer circuit is disclosed. The synthesizer circuit includes a multi-phase network circuit operative to provide output signals that are at least a 1/(2n+1)) fractional version of the input signal. The synthesizer circuit includes a phase lock loop (PLL) circuit, with the multi-phase network circuit being coupled to the negative feedback loop of the PLL. The multi-phase network circuit includes a smoothing circuit that removes any jitter present at the output of the PLL.Type: GrantFiled: April 4, 2002Date of Patent: November 4, 2003Assignee: ATI Technologies, Inc.Inventors: Oleg Drapkin, Chak Cheung Ho, Ngar Sze Chan, Grigori Temkine, Ho Ming Wan
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Publication number: 20030189464Abstract: A spurious-free fractional-N frequency synthesizer circuit is disclosed. The synthesizer circuit includes a multi-phase network circuit operative to provide output signals that are at least a 1/(2n+1)) fractional version of the input signal. The synthesizer circuit includes a phase lock loop (PLL) circuit, with the multi-phase network circuit being coupled to the negative feedback loop of the PLL. The multi-phase network circuit includes a smoothing circuit that removes any jitter present at the output of the PLL.Type: ApplicationFiled: April 4, 2002Publication date: October 9, 2003Inventors: Oleg Drapkin, Chak Cheung Ho, Ngar Sze Chan, Grigori Temkine, Ho Ming Wan
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Publication number: 20030151424Abstract: The present invention provides a memory device with a N-MOS self-termination scheme which enables or disables the device to eliminate ringing and line reflections in a memory device such as a DDR SDRAM. The self-termination is achieved by using a weak N-MOS transistor. The N-MOS transistors are within the device and has an impedance of two to eight times of the characteristic impedance of a communication path in a memory device such as DRAM or SRDAM. The communication path is generally a read/write or command/address bus. The self-termination scheme terminates line reflections occurring in a device receiving data during non productive time duration of system clock. The present invention provides a method by which random access memories perform with faster settling time for data inputs and a high system performance.Type: ApplicationFiled: June 5, 2002Publication date: August 14, 2003Inventors: Joseph Macri, Oleg Drapkin, Grigori Temkine, Osamu Nagashima
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Patent number: 6553445Abstract: A method and apparatus for simultaneously communicating data over a plurality of data links, such as a bus, determines initial logic levels of data to the output on each of the plurality of data links and changes the logic levels, such as inverting the data, of at least some of the data to produce logic level adjusted data in response to determining the initial logic level of the data to reduce switching transitions of simultaneously switched output data over the plurality of data links.Type: GrantFiled: February 4, 2000Date of Patent: April 22, 2003Assignee: ATI International SRLInventors: Oleg Drapkin, Grigori Temkine
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Patent number: 6541996Abstract: An impedance compensation circuit and method for an input/output buffer provides dynamic impedance compensation by using programmable impedance arrays and a dynamically adjustable on-chip load. Accordingly, among other advantages, only a single off-chip or external calibrated impedance resistor is used and only a single test pad is necessary.Type: GrantFiled: December 21, 1999Date of Patent: April 1, 2003Assignee: ATI International SRLInventors: Peter L. Rosefield, Oleg Drapkin, Grigori Temkine, Gordon F. Caruk, Roche Thambimuthu, Kuldip Sahdra, Aris Balatsos
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Patent number: 6532525Abstract: A specific embodiment is disclosed for a method and apparatus for processing data access requests from a requesting device, such as a graphics processor device. Data access commands are provided at a first rate, for example 200M commands per second, to a memory bridge. In response to receiving the access requests the memory bridge will provide its own access requests to a plurality of memories at approximately the first rate. In response to the memory bridge requests, the plurality of memories will access a plurality of data at a second data rate. When the data access between the memory bridge and the memories is a read request, data is returned to the requesting device at a third data rate which is greater than the first data rate by approximately four-times or more. Noise and power reduction techniques can be used on the data bus between the accessing device and the data bridge.Type: GrantFiled: September 29, 2000Date of Patent: March 11, 2003Assignee: ATI Technologies, Inc.Inventors: Milivoje Aleksic, Grigory Temkine, Oleg Drapkin, Carl Mizuyabu, Adrian Hartog
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Patent number: 6502173Abstract: A specific embodiment is disclosed for a method and apparatus for processing data access requests from a requesting device, such as a graphics processor device. Data access commands are provided at a first rate, for example 200M command per second, to a memory bridge. In response to receiving the access requests the memory bridge will provide its own access requests to a plurality of memories at approximately the first rate. In response to the memory bridge requests, the plurality of memories will access a plurality of data a second data rate. When the data access between the memory bridge and the memories is a read request, data is returned to the requesting device at a third data rate which is greater than the first data rate by approximately four times or more. Noise and power reduction techniques can be used on the data bus between the accessing device and the data bridge.Type: GrantFiled: September 29, 2000Date of Patent: December 31, 2002Assignee: ATI Technologies, Inc.Inventors: Milivoje Aleksic, Grigory Temkine, Oleg Drapkin, Carl Mizuyabu, Adrian Hartog
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Patent number: 6480051Abstract: A voltage supply discriminator circuit senses multiple logic voltage supply levels and produces a plurality of control signals to select either or both of an output buffer circuit and/or an input buffer circuit that is coupled to a pad or pin. The discriminator circuit utilizes an input/output ring voltage supply and a reference voltage, such as a core voltage supply, to determine the appropriate circuitry to be used for the I/O pad. The appropriate circuitry is then automatically activated.Type: GrantFiled: June 26, 2001Date of Patent: November 12, 2002Assignee: ATI International SRLInventors: Oleg Drapkin, Grigori Temkine
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Publication number: 20020153935Abstract: A pre-buffer voltage level shifting circuit includes a multi-supply voltage level shifting circuit having single gate oxide devices coupled to produce a pre-buffer output signal to an output buffer. The pre-buffer output signal has a level within normal gate voltage operating levels of the single gate oxide devices for each of the least a plurality of supply voltages. In one embodiment, the multi-supply voltage level shifting circuit includes a current mirror coupled to at least one of the first or second power supply voltage and also uses a non-linear device, such as a transistor configured as a diode, which is coupled to the output of current mirror. The non-linear device is coupled to receive a digital input signal from a signal source, such as from a section of core logic. A switching circuit coupled to the non-linear device selectively activates the non-linear device based on a level of the digital input signal.Type: ApplicationFiled: April 16, 2002Publication date: October 24, 2002Inventors: Oleg Drapkin, Grigori Temkine
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Patent number: 6459553Abstract: An electrostatic discharge circuit utilizes a cascaded transistor configuration and a dual ESD protection circuit configuration. Preferably, the ESD protection circuits are made as a single gate oxide circuit. The protection circuit is effectively disabled during normal operation and allows a variable level voltage input to be applied during normal operation without damage to the cascaded transistors.Type: GrantFiled: March 19, 1999Date of Patent: October 1, 2002Assignee: ATI International SRLInventors: Oleg Drapkin, Grigori Temkine
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Patent number: 6429716Abstract: A pre-buffer voltage level shifting circuit includes a multi-supply voltage level shifting circuit having single gate oxide devices coupled to produce a pre-buffer output signal to an output buffer. The pre-buffer output signal has a level within normal gate voltage operating levels of the single gate oxide devices for each of the least a plurality of supply voltages. In one embodiment, the multi-supply voltage level shifting circuit includes a current mirror coupled to at least one of the first or second power supply voltage and also uses a non-linear device, such as a transistor configured as a diode, which is coupled to the output of current mirror. The non-linear device is coupled to receive a digital input signal from a signal source, such as from a section of core logic. A switching circuit coupled to the non-linear device selectively activates the non-linear device based on a level of the digital input signal.Type: GrantFiled: December 14, 1998Date of Patent: August 6, 2002Assignee: ATI International SRLInventors: Oleg Drapkin, Grigori Temkine
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Patent number: 6400546Abstract: An I/O pad voltage protection circuit and method tracks a bias voltage of cascaded stages in order to avoid overvoltage stress in I/O transistors. An overshoot protection circuit controls overshoot current sinking to provide a clamp voltage equal to an I/O pad supply voltage, or other suitable reference voltage, during overshoot conditions, as a function of a reference voltage generated by a reference voltage generating circuit. An undershoot protection circuit includes a reference voltage generating circuit and controls undershoot current sinking to provide a clamp voltage approximately equal to an I/O pad ground voltage, or other suitable reference voltage, during undershoot conditions as a function of a reference voltage generated by the second reference voltage generating circuit.Type: GrantFiled: September 2, 1999Date of Patent: June 4, 2002Assignee: Ati International SrlInventors: Oleg Drapkin, Grigori Temkine
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Patent number: 6373282Abstract: A cascaded output buffer stage and buffering method converts a voltage level of a received internal signal, such as a signal to be output (transmitted) from the cascaded output buffer stage, prior to outputting the received signal; selectively provides a variable reference voltage signal for a cascaded circuit element in the output buffer and also generates a floating well output signal for wells associated the cascaded upper buffer circuit elements. The cascaded output buffer stage is also, in one embodiment, a single gate oxide cascaded output buffer stage. In one embodiment, a voltage level shifting circuit is used along with a variable reference generating circuit that provides a variable reference voltage signal to cascaded output buffer circuits, and that also provides a floating well output signal to wells of the cascaded circuit. The voltage level shifting circuit and variable reference generating circuit is operatively coupled to a cascaded pull up circuit or cascaded pull down circuit as needed.Type: GrantFiled: August 20, 1999Date of Patent: April 16, 2002Assignee: ATI International SrlInventors: Oleg Drapkin, Grigori Tempkine
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Patent number: 6362942Abstract: An extraneous voltage protection circuit and method transforms an overvoltage input signal or undervoltage input signal to a suitable voltage level for a protected circuit. An input voltage dependent variable reference voltage is used to protect overvoltage protection circuitry against unsuitable undervoltage conditions. In one embodiment, an overvoltage protection circuit, an undervoltage protection circuit, and an input voltage dependent variable reference voltage source is made of single gate oxide MOS devices.Type: GrantFiled: March 19, 1999Date of Patent: March 26, 2002Assignee: ATI International SRLInventors: Oleg Drapkin, Grigori Temkine
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Patent number: 6359485Abstract: An integrated circuit and method utilizes a differential input receiver having a first input that receives an input signal. A reference voltage adjustment circuit produces a variable reference signal for the second input of a differential input receiver. A feedback path is provided from the output of the differential input receiver to an input of the reference voltage adjustment circuit. The reference voltage adjustment circuit dynamically varies the variable reference voltage signal to facilitate hysteresis. The variable reference voltage signal is lowered in the case of a high input signal, and raised in the case of a low input signal.Type: GrantFiled: July 11, 2000Date of Patent: March 19, 2002Assignee: ATI International SRLInventors: Oleg Drapkin, Grigori Temkine
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Patent number: 6351182Abstract: A circuit and method for providing a reference voltage includes controlling a plurality of current sources which are passive during generation of a reference voltage within a suitable operating range, but which are active during corrective portions when the reference voltage varies outside of a suitable operating range. A plurality of sensing elements is used in connection with the current sources to provide feedback to maintain the reference voltage within a suitable operating range. In one embodiment, all circuit elements are made of a single gate oxide thickness.Type: GrantFiled: August 2, 1999Date of Patent: February 26, 2002Assignee: ATI International SRLInventors: Oleg Drapkin, Grigori Temkine
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Patent number: 6342996Abstract: An input stage circuit and method provides voltage level conversion and overvoltage protection for an input stage circuit using a single gate oxide pass circuit and a single gate oxide voltage level shifting circuit. In one embodiment, the circuit and method includes receiving an input signal through the single gate oxide voltage pass circuit wherein the input signal can have a voltage level higher and lower than a first reference voltage for the voltage pass circuit. An output signal from the voltage pass circuit is provided to a single gate oxide voltage level shifting circuit that shifts a voltage level of the input signal from a first logic high level to a second lower logic high level when the input signal is above a reference voltage.Type: GrantFiled: July 9, 1999Date of Patent: January 29, 2002Assignee: ATI International SRLInventors: Oleg Drapkin, Grigori Temkine
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Publication number: 20010035785Abstract: A voltage supply discriminator circuit senses multiple logic voltage supply levels and produces a plurality of control signals to select either or both of an output buffer circuit and/or an input buffer circuit that is coupled to a pad or pin. The discriminator circuit utilizes an input/output ring voltage supply and a reference voltage, such as a core voltage supply, to determine the appropriate circuitry to be used for the I/O pad. The appropriate circuitry is then automatically activated.Type: ApplicationFiled: June 26, 2001Publication date: November 1, 2001Inventors: Oleg Drapkin, Grigori Temkine