Abstract: Disclosed is a substrate processing apparatus including: a substrate holding member that holds a peripheral portion of a substrate; a rotating member that includes a plate provided with the substrate holding member and rotates the substrate by rotating the plate; a fluid supply unit that is disposed at a center of the rotating member and supplies a processing liquid and an inert gas to a lower surface of the substrate held by the substrate holding member; and a controller that controls to perform a liquid processing by supplying the processing liquid to the lower surface of the substrate while rotating the substrate, and, after the liquid processing, to perform a drying processing of the substrate while supplying the inert gas to the lower surface of the substrate.

Abstract: A substrate processing apparatus includes: a holding part for holding a substrate; a rotating part for rotating the holding part to rotate the substrate together with the holding part; a liquid supply part for supplying a cleaning liquid to a main surface of the substrate; a polishing head for polishing the main surface; a moving part for scanning the polishing head in a radial direction of the substrate while pressing the polishing head against the main surface; and a controller for controlling the rotating part, the liquid supply part, and the moving part. The controller sets a division line that divides the main surface into plural areas in the radial direction, and controls the liquid supply part to supply the cleaning liquid for each area and controls the moving part to scan the polishing head for each area while a subsequent supply of the cleaning liquid is stopped.

Abstract: A substrate processing method includes polishing a target surface of a substrate to be polished by moving a polishing brush in a horizontal direction while pressing the polishing brush against the polishing target surface of the substrate which rotates in a horizontal posture around a vertical axis. The polishing is performed while varying a rotation speed of the substrate and a moving speed of the polishing brush such that the rotation speed of the substrate decreases stepwise or continuously and the moving speed of the polishing brush in a radial direction of the substrate decreases stepwise or continuously as a distance from a center of rotation of the substrate measured in the radial direction of the substrate to a center of the polishing brush increases.

Abstract: An Ni-based alloy pipe for nuclear power has a chemical composition consisting of, in mass percent: C: 0.015 to 0.030%, Si: 0.10 to 0.50%, Mn: 0.10 to 0.50%, P: 0.040% or less, S: 0.015% or less, Cu: 0.01 to 0.20%, Ni: 50.0 to 65.0%, Cr: 19.0 to 35.0%, Mo: 0 to 0.40%, Co: 0.040% or less, Al: 0.30% or less, N: 0.010 to 0.080%, Ti: 0.020 to 0.180%, Zr: 0.010% or less, and Nb: 0.060% or less, the balance: Fe and impurities, and satisfying [(N?Ti×14/48)×d3?4000] in relation to an average grain diameter, wherein a standard deviation of grain diameters is 20 ?m or less, and a hardness of insides of grains is 180 HV or more.

Abstract: A substrate processing apparatus includes: a holding part for holding a substrate; a rotating part for rotating the holding part to rotate the substrate together with the holding part; a liquid supply part for supplying a cleaning liquid to a main surface of the substrate; a polishing head for polishing the main surface; a moving part for scanning the polishing head in a radial direction of the substrate while pressing the polishing head against the main surface; and a controller for controlling the rotating part, the liquid supply part, and the moving part. The controller sets a division line that divides the main surface into plural areas in the radial direction, and controls the liquid supply part to supply the cleaning liquid for each area and controls the moving part to scan the polishing head for each area while a subsequent supply of the cleaning liquid is stopped.

Abstract: Disclosed is a substrate processing apparatus including: a substrate holding member that holds a peripheral portion of a substrate; a rotating member that includes a plate provided with the substrate holding member and rotates the substrate by rotating the plate; a fluid supply unit that is disposed at a center of the rotating member and supplies a processing liquid and an inert gas to a lower surface of the substrate held by the substrate holding member; and a controller that controls to perform a liquid processing by supplying the processing liquid to the lower surface of the substrate while rotating the substrate, and, after the liquid processing, to perform a drying processing of the substrate while supplying the inert gas to the lower surface of the substrate.

Abstract: Disclosed is a substrate processing apparatus including: a substrate holding member that holds a peripheral portion of a substrate; a rotating member that includes a plate provided with the substrate holding member and rotates the substrate by rotating the plate; a fluid supply unit that is disposed at a center of the rotating member and supplies a processing liquid and an inert gas to a lower surface of the substrate held by the substrate holding member; and a controller that controls to perform a liquid processing by supplying the processing liquid to the lower surface of the substrate while rotating the substrate, and, after the liquid processing, to perform a drying processing of the substrate while supplying the inert gas to the lower surface of the substrate.

Abstract: An Ni-based alloy pipe for nuclear power has a chemical composition consisting of, in mass percent: C: 0.015 to 0.030%, Si: 0.10 to 0.50%, Mn: 0.10 to 0.50%, P: 0.040% or less, S: 0.015% or less, Cu: 0.01 to 0.20%, Ni: 50.0 to 65.0%, Cr: 19.0 to 35.0%, Mo: 0 to 0.40%, Co: 0.040% or less, Al: 0.30% or less, N: 0.010 to 0.080%, Ti: 0.020 to 0.180%, Zr: 0.010% or less, and Nb: 0.060% or less, the balance: Fe and impurities, and satisfying [(N?Ti×14/48)×d3?4000] in relation to an average grain diameter, wherein a standard deviation of grain diameters is 20 ?m or less, and a hardness of insides of grains is 180 HV or more.

Abstract: A substrate processing method includes polishing a target surface of a substrate to be polished by moving a polishing brush in a horizontal direction while pressing the polishing brush against the polishing target surface of the substrate which rotates in a horizontal posture around a vertical axis. The polishing is performed while varying a rotation speed of the substrate and a moving speed of the polishing brush such that the rotation speed of the substrate decreases stepwise or continuously and the moving speed of the polishing brush in a radial direction of the substrate decreases stepwise or continuously as a distance from a center of rotation of the substrate measured in the radial direction of the substrate to a center of the polishing brush increases.

Abstract: Disclosed is a substrate processing apparatus including: a substrate holding member that holds a peripheral portion of a substrate; a rotating member that includes a plate provided with the substrate holding member and rotates the substrate by rotating the plate; a fluid supply unit that is disposed at a center of the rotating member and supplies a processing liquid and an inert gas to a lower surface of the substrate held by the substrate holding member; and a controller that controls to perform a liquid processing by supplying the processing liquid to the lower surface of the substrate while rotating the substrate, and, after the liquid processing, to perform a drying processing of the substrate while supplying the inert gas to the lower surface of the substrate.

Abstract: A Ni-based alloy tube includes a base metal having a chemical composition consisting, by mass percent, of C: 0.15% or less, Si: 1.0% or less, Mn: 2.0% or less, P: 0.030% or less, S: 0.030% or less, Cr: 10.0 to 40.0%, Ni: 50.0 to 80.0%, Ti: 0.50% or less, Cu: 0.60% or less, Al: 0.20% or less, N: 0.20% or less, and the balance: Fe and impurities; and a low Cr content complex oxide film having a thickness of 25 nm or smaller at least on an inner surface of the base metal, wherein contents of Al, Ni, Si, Ti, and Cr in the film satisfy [at % Al/at % Cr?2.00], [at % Ni/at % Cr?1.40], and [(at % Si+at % Ti)/at % Cr?0.10].

Abstract: A Ni-based alloy tube includes a base metal having a chemical composition consisting, by mass percent, of C: 0.15% or less, Si: 1.0% or less, Mn: 2.0% or less, P: 0.030% or less, S: 0.030% or less, Cr: 10.0 to 40.0%, Ni: 50.0 to 80.0%, Ti: 0.50% or less, Cu: 0.60% or less, Al: 0.20% or less, N: 0.20% or less, and the balance: Fe and impurities; and a low Cr content complex oxide film having a thickness of 25 nm or smaller at least on an inner surface of the base metal, wherein contents of Al, Ni, Si, Ti, and Cr in the film satisfy [at % Al/at % Cr?2.00], [at % Ni/at % Cr?1.40], and [(at % Si+at % Ti)/at % Cr?0.10].

Abstract: A method for heat treating a metal tube or pipe is provided to perform heat treatment in such a manner that metal tubes or pipes (1) to be accommodated in a heat treatment furnace are laid down on a plurality of cross beams (22) arranged along a longitudinal direction of the metal tubes or pipes with the distance between adjacent cross beams being in a range of 200 to 2500 mm. This makes it possible to inhibit bending and scratches of the metal tubes or pipes without causing discoloration and deterioration of the manufacturing efficiency for the metal tubes or pipes. When the metal tubes or pipes (1) are laid down on the cross beams (22), spacers may be interposed between the metal tubes or pipes (1) and the cross beams (22) on which they are laid down.

Abstract: There is provided a Cr-containing austenitic alloy having a chromium oxide film with a thickness of 5 nm or larger on the surface, wherein the content of Mn in a base metal is, by mass percent, less than 0.1%. The chemical composition of the base metal desirably consists of, by mass percent, C: 0.15% or less, Si: 1.00% or less, Mn: less than 0.1%, P: 0.030% or less, S: 0.030% or less, Cr: 10.0 to 40.0%, Ni: 8.0 to 80.0%, Ti: 0.5% or less, Cu: 0.6% or less, Al: 0.5% or less, and N: 0.20% or less, the balance being Fe and impurities.

Abstract: There is provided a chromium-containing austenitic alloy wherein at least one surface of the surfaces of the alloy has a continuous chromium oxide film with a thickness of 5 nm or more and less than 50 nm. A maximum current density determined by a critical passivation current density method is 0.1 ?A/cm2 or less when the chromium oxide film is continuous. A chemical composition of a base metal preferably consists of, by mass percent, C: 0.15% or less, Si: 1.00% or less, Mn: 2.0% or less, P: 0.030% or less, S: 0.030% or less, Cr: 10.0 to 40.0%, Ni: 8.0 to 80.0%, Ti: 0.5% or less, Cu: 0.6% or less, Al: 0.5% or less, and N: 0.20% or less, the balance being Fe and impurities.

Abstract: In performing cold rolling on a seamless pipe as a mother pipe, it is possible to inhibit the generation of metal chips from the end portions of the mother pipe, and to prevent the formation of indentations therein that may be caused by the metal chips to thereby provide good surface appearance. This is made possible by using a mother pipe (1) having end portions at the cold rolling starting side and finishing side that have been R-chamfered, at each outer edge and at each inner edge, such that (T0?T1)/2?R?T0/2 is satisfied, where R is a radius (mm) of the R-chamfer on the outer edges and the inner edges of the end portions, T0 is a wall thickness of the mother pipe, and T1 is a wall thickness of the pipe after cold rolling.

Abstract: There is provided a Cr-containing austenitic alloy having a chromium oxide film with a thickness of 5 nm or larger on the surface, wherein the content of Mn in a base metal is, by mass percent, less than 0.1%. The chemical composition of the base metal desirably consists of, by mass percent, C: 0.15% or less, Si: 1.00% or less, Mn: less than 0.1%, P: 0.030% or less, S: 0.030% or less, Cr: 10.0 to 40.0%, Ni: 8.0 to 80.0%, Ti: 0.5% or less, Cu: 0.6% or less, Al: 0.5% or less, and N: 0.20% or less, the balance being Fe and impurities.

Abstract: In performing cold rolling on a seamless pipe as a mother pipe, it is possible to inhibit the generation of metal chips from the end portions of the mother pipe, and to prevent the formation of indentations therein that may be caused by the metal chips to thereby provide good surface appearance. This is made possible by using a mother pipe (1) having end portions at the cold rolling starting side and finishing side that have been R-chamfered, at each outer edge and at each inner edge, such that (T0?T1)/2?R?T0/2 is satisfied, where R is a radius (mm) of the R-chamfer on the outer edges and the inner edges of the end portions, T0 is a wall thickness of the mother pipe, and T1 is a wall thickness of the pipe after cold rolling.

Abstract: There is provided a chromium-containing austenitic alloy wherein at least one surface of the surfaces of the alloy has a continuous chromium oxide film with a thickness of 5 nm or more and less than 50 nm. A maximum current density determined by a critical passivation current density method is 0.1 ?A/cm2 or less when the chromium oxide film is continuous. A chemical composition of a base metal preferably consists of, by mass percent, C: 0.15% or less, Si: 1.00% or less, Mn: 2.0% or less, P: 0.030% or less, S: 0.030% or less, Cr: 10.0 to 40.0%, Ni: 8.0 to 80.0%, Ti: 0.5% or less, Cu: 0.6% or less, Al: 0.5% or less, and N: 0.20% or less, the balance being Fe and impurities.