Abstract: A method for producing a glass substrate for a magnetic disk by polishing a circular glass plate, which comprises a step of polishing the principal plane of the circular glass plate by using a slurry containing at least one water-soluble polymer selected from the group consisting of a water-soluble organic polymer having amino groups, a water-soluble organic polymer having amine salt groups and a water-soluble organic polymer having quaternary ammonium salt groups, and colloidal silica.

Abstract: A developing method is used for subjecting a light-exposed resist film disposed on a wafer W to a developing process by a developing solution and a rinsing process by a rinsing liquid. In a state where the resist film on the wafer W is wet with the developing solution or rinsing liquid before a drying process is performed on the wafer W, a chemical liquid (curing chemical liquid), which contains a resist curing aid contributory to curing of a resist film remaining on the wafer W, is supplied onto a surface of the wafer W. Then, ultraviolet rays are radiated onto a surface of the wafer to cure a resist film remaining on the wafer W by a synergistic effect of the resist curing aid and the ultraviolet rays thus radiated, so as to prevent pattern fall.

Abstract: A developing method is used for subjecting a light-exposed resist film disposed on a wafer W to a developing process by a developing solution and a rinsing process by a rinsing liquid. In a state where the resist film on the wafer W is wet with the developing solution or rinsing liquid before a drying process is performed on the wafer W, a chemical liquid (curing chemical liquid), which contains a resist curing aid contributory to curing of a resist film remaining on the wafer W, is supplied onto a surface of the wafer W. Then, ultraviolet rays are radiated onto a surface of the wafer to cure a resist film remaining on the wafer W by a synergistic effect of the resist curing aid and the ultraviolet rays thus radiated, so as to prevent pattern fall.

Abstract: A rinsing method for performing a rinsing process on a substrate, after a developing process is performed on a light-exposed pattern disposed thereon, includes a step (STEP 5) of throwing off a developing solution from the substrate after development; a step (STEP 6) of supplying a water-based cleaning liquid onto the substrate; a step (STEP 7) of supplying a surfactant-containing rinsing liquid onto the substrate to replace liquid remaining on the substrate with the surfactant-containing rinsing liquid; and a step (STEP 8) of rotating the substrate to expand and throw off the surfactant-containing rinsing liquid on the substrate. STEP 8 is arranged to supply the surfactant-containing rinsing liquid for a supply time of 5 seconds or less. STEP 9 is arranged to include a first period with a lower rotation number and a second period with a higher rotation number, and to set the rotation number of the substrate in the first period to be more than 300 rpm and less than 1,000 rpm.

Abstract: In the coating treatment apparatus, in a first treatment chamber, the front and rear surfaces of the substrate held by a transfer arm are inverted by a turning mechanism, and a coating solution is applied from a coating nozzle to the rear surface of the substrate. The substrate is transferred into a second treatment chamber, in which the coating solution on the rear surface is heated by a heating unit to cure, thereby forming a coating film on the rear surface of the substrate. The formation of the coating film by the coating treatment apparatus is performed before exposure processing, whereby the rear surface of the substrate can be flat for the exposure processing.

Abstract: According to the present invention, during the photolithography processing of a substrate, exposure processing is performed immediately after removal of a coating film on the rear surface of the substrate, and a coating film is formed on the rear surface of the substrate immediately after the exposure processing. Thereafter, etching treatment and so on are performed, and a series of these treatment and processing steps are performed a predetermined number of times. The coating film has been formed on the rear surface of the substrate at the time for the etching treatment, so that even if the coating film gets minute scratches, the rear surface of the substrate itself is protected by the coating film and thus never scratched. Further, since the coating film on the rear surface of the substrate is removed immediately before the exposure processing, the rear surface of the substrate can be flat for the exposure processing.

Abstract: In the present invention, a plurality of rounds of patterning are performed on a substrate. In a patterning system, the substrate on which a first round of patterning has been performed is transferred to a planarizing film forming unit, where a planarizing film is formed above the substrate. The substrate is then transferred to the patterning system and subjected to a second round of patterning. The time from the completion of the forming processing of the planarizing film to the start of the second round of patterning is managed to be constant among the substrates. According to the present invention, in the pattern forming processing of performing a plurality of rounds of patterning, a pattern with a desired dimension can be stably formed above the substrate.

Abstract: A coating film forming apparatus includes a process section including one or more coating units and one or more thermally processing units; a pre-coating cleaning unit configured to perform cleaning on a back surface and an edge portion of a substrate; and a pre-coating check unit configured to check a state of a back surface and an edge portion of the substrate. A control section is configured to realize a sequence of cleaning the substrate by the pre-coating cleaning unit, checking the substrate by the pre-coating check unit, making a judgment based on a check result thus obtained of whether or not a state of particles on a back surface and an edge portion of the substrate is within an acceptable range, and permitting transfer of the substrate into the process section where the state of particles is within the acceptable range.

Abstract: A method for producing a glass substrate for a magnetic disk by polishing a circular glass plate, which comprises a step of polishing the principal plane of the circular glass plate by using a slurry containing at least one water-soluble polymer selected from the group consisting of a water-soluble organic polymer having amino groups, a water-soluble organic polymer having amine salt groups and a water-soluble organic polymer having quaternary ammonium salt groups, and colloidal silica.

Abstract: A method for producing a glass substrate for a magnetic disk by polishing a circular glass plate, which comprises a step of polishing the principal plane of the circular glass plate by using a slurry containing a CeO2 crystal powder, the CeO2 crystal powder being obtained in such a manner that a melt containing CeO2 is quenched to obtain an amorphous material, and the amorphous material is subjected to heat treatment to obtain a CeO2 crystals-precipitated amorphous material, which is subjected to acid treatment to separate and extract the CeO2 crystal powder from the CeO2 crystals-precipitated amorphous material.

Abstract: A developing method is used for subjecting a light-exposed resist film disposed on a wafer W to a developing process by a developing solution and a rinsing process by a rinsing liquid. In a state where the resist film on the wafer W is wet with the developing solution or rinsing liquid before a drying process is performed on the wafer W, a chemical liquid (curing chemical liquid), which contains a resist curing aid contributory to curing of a resist film remaining on the wafer W, is supplied onto a surface of the wafer W. Then, ultraviolet rays are radiated onto a surface of the wafer to cure a resist film remaining on the wafer W by a synergistic effect of the resist curing aid and the ultraviolet rays thus radiated, so as to prevent pattern fall.

Abstract: A method for cleaning a disk-shape glass substrate, which comprises rotating the disk-shape glass substrate on its center with its main surface vertical, and making a cleaning fluid irradiated with ultrasonic waves run down on the outer peripheral edge surface of the rotating glass substrate.

Abstract: A doughnut-type glass substrate for a magnetic disk having a circular hole at its center, characterized in that its inner peripheral edge surface is an etched surface with a large number of pits having different curvature radii adjacent to one another, and the proportion of pits having curvature radii r of at most 0.5 ?m is at most 5% to all the pits on the etched surface.

Abstract: A method for coating doughnut-type glass substrates, which comprises laminating a plurality of doughnut-type glass substrates each having a circular hole at its center so that the circular holes form a cylindrical hole, and supplying a coating liquid to an inner peripheral surface of the cylindrical hole in a state where the glass substrates are laminated to coat inner peripheral edge surfaces of the plurality of the doughnut-type glass substrates with the coating liquid.

Abstract: A method for etching doughnut-type glass substrates, which comprises laminating a plurality of doughnut-type glass substrates each having a circular hole at its center so that the circular holes form a cylindrical hole, and applying an etching treatment to inner peripheral edge surfaces of the plurality of the laminated doughnut-type glass substrates all at once by means of an etching liquid or an etching gas, wherein the etching liquid or the etching gas is supplied from one end of the cylindrical hole, made to flow in the cylindrical hole, and discharged from the other end of the cylindrical hole so that it is not in contact with exposed main surfaces of the doughnut-type glass substrates at both ends of the laminate consisting of the doughnut-type glass substrates.

Abstract: A method of heat treatment for an efficient forming of two-layered oxide film on the inside surface of a Ni-base alloy tube. The oxide film suppresses the Ni release in a high-temperature water environment. At least two gas supplying devices are provided on the outlet side of a continuous heat treatment furnace; or one gas supplying device is provided respectively on the outlet side and the inlet side thereof. The tube is put into the furnace while supplying an atmospheric gas into the tube from the front end of the tube moving direction with one of these gas supplying devices and a gas introducing pipe, which is arranged inside the furnace, and this tube is maintained at 650 to 1200° C. for 1 to 1200 minutes. The atmospheric gas consists of hydrogen or a mixture of hydrogen and argon, whose dew point is in a range of from ?60° C. to +20° C.

Abstract: A glass substrate for magnetic disks, which is a doughnut-type glass substrate having a cut hole at its center, wherein the inner peripheral edge surface at the cut hole is covered with a coating film formed by curing a silicone resin and providing a contact angle of at least 30°.

Abstract: A glass substrate for magnetic disks, which is a doughnut-type glass substrate with its inner peripheral edge surface etching-treated, wherein the etching-treated inner peripheral edge surface is coated with a silicone resin or a polyimide.

Abstract: A method of heat treatment for an efficient forming of two-layered oxide film on the inside surface of a Ni-base alloy tube. The oxide film suppresses the Ni release in a high-temperature water environment.

Abstract: (1) A nickel-base alloy product having, on the surface thereof, an oxide film comprising at least two layers, namely a first layer mainly composed of Cr2O3 and having a chromium content of not less than 50% relative to the total amount of metal elements and a second layer occurring outside the first layer and mainly composed of MnCr2O4, wherein the grain size of Cr2O3 crystals in the first layer is 50 to 1,000 nm and the total oxide film thickness is 180 to 1,500 nm. (2) A method of producing the nickel-base alloy product as specified above under (1) which comprises subjecting a nickel-base alloy product to oxide film formation treatment by maintaining the same at a temperature of 650 to 1,200° C. in a hydrogen atmosphere or hydrogen-argon mixed atmosphere showing a dew point of −60° C. to +20° C. for 1 to 1,200 minutes.