Abstract: A DRAM having a plurality of bit lines and associated sense amplifiers, the bit lines being arrayed across an integrated circuit chip and the sense amplifiers being disposed in a row, a pair of low resistance power supply conductors extending in parallel with the row for carrying logic high level and logic low level voltages, sense amplifier enabling signal conductors extending across the chip accessible to the sense amplifiers, apparatus for coupling sense inputs of the sense amplifiers to the power supply conductors, and apparatus coupling the sense amplifier enabling signal conductors to the apparatus for coupling sense inputs, for enabling passage of current resulting from the logic high level and low level voltages to the sense amplifiers.

Abstract: A method of enabling a controllable and variable number of bits to be written to a group of cells of a DRAM or SRAM simultaneously in a block, wherein a predecoded column address signal is decoded for enabling writing to cells of the DRAM or SRAM, and the predecoded column address signal is block overwritten by means of a block address signal, whereby plural decoders are enabled simultaneously for simultaneous writing to a column of cells notwithstanding the logic levels of the predecoded address signal.

Abstract: A method of processing a data bit having one of four voltage levels stored in a dynamic random access memory (DRAM) cell capacitor comprised of sensing whether or not the data bit voltage is above or below a voltage level midway between a highest and a lowest level of the four levels, and indicating a sign bit based thereon, setting a threshold level based on the ratio of the capacitance of a storage cell capacitor and the total of the cell capacitor, a dummy cell capacitor and a bitline and the value of a sign bit, and sensing whether the data voltage is higher or lower than the threshold level, and indicating a magnitude bit based thereon, whereby the combination of the sign and magnitude bits represent which of the four levels is the voltage level data bit.

Abstract: A random access memory comprising rowlines and columns crossing the rowlines, memory cells being associated with crossings of rowlines and columns; apparatus for connecting the memory cells to columns from voltage carried on the rowlines, the rowlines, columns and memory cells being arranged in more than two adjacent arrays; a column decoder providing access apparatus to columns in all the arrays; apparatus to disable the column access in any or all arrays and apparatus to enable a replacement spare column or columns using a spare column decoder in any or all of the arrays.

Abstract: Apparatus and methods for controlling the sensing of bit lines which facilitates the distribution of bit line charging current to be distributed any time, and facilitates the fast raising of the sense modes to full logic levels. An embodiment is comprised of a plurality of bit storage capacitors, a folded bit line for receiving charge stored on one of the capacitors, having bit line capacitance, a sense amplifier having a pair of sense nodes for sensing a voltage differential across the sense nodes, apparatus connected to the bit line and the sense nodes for imperfectly isolating the sense nodes from the bit line whereby current can leak therethrough, apparatus for enabling the sense amplifier and for disabling the isolating apparatus and thereby removing the isolation between the sense amplifier and the bit line, whereby current passing through the sense amplifier to the sense nodes is enabled to charge the bit line capacitance through the isolating apparatus to predetermined logic voltage level.

Abstract: A circuit for providing an output voltage for a DRAM word line which can be used to drive memory word lines which can be as high as 2V.sub.dd. Transistors in a boosting circuit are fully switched, eliminating the reduction of the boosting voltage by V.sub.tn as in the prior art. The boosting capacitors are charged by V.sub.dd, thus eliminating draft tracking problems associated with clock boosting sources and V.sub.dd. A regulator detects conduction current of a replica of a memory cell access transistor, shutting off the boosting circuit clock oscillator when the correct voltage to operate the access transistor has been reached.

Abstract: Apparatus and a method for latching a column address in a DRAM, having increased speed and no race conditions. The method is comprised of the steps of receiving column select and column address input signals, enabling detection and indication, by generation of an indication signal, of the presence of each stable column address input signal upon the presence of a column select signal, summing the indication signals, and operating a latch by each of the column address input signals whereby a DRAM column can be addressed upon enabling by the summed indication signals, whereby the latching is not enabled without a first indication of the presence of a stable column address and whereby the first indication is prevented without the earlier presence of a column select signal.

Abstract: A method of processing data having one of four voltage levels stored in a DRAM cell is comprised of sensing whether or not the data voltage is above or below a voltage level midway between a highest and a lowest of the four levels, setting the voltage on a reference line higher than the lowest and lower than the next highest of the four levels in the event the data voltage is below the midway voltage level, and setting the voltage on the reference line higher than the second highest and lower than the highest of the four levels in the event the data voltage is above the midway point, and sensing whether the data voltage is higher or lower than the reference line, whereby which of the four levels the data occupies is read.

Abstract: A circuit for providing an output voltage for a DRAM word line which can be used to drive memory word lines which can be as high as 2V.sub.dd. Transistors in a boosting circuit are fully switched, eliminating the reduction of the boosting voltage by V.sub.tn as in the prior art. The boosting capacitors are charged by V.sub.dd, thus eliminating drift tracking problems associated with clock boosting sources and V.sub.dd. A regulator detects conduction current of a replica of a memory cell access transistor, shutting off the boosting circuit clock oscillator when the correct voltage to operate the access transistor has been reached.

Abstract: An address transition detection circuit which uses fast inverters in a delay line, avoiding filtering of input pulses and providing significant threshold voltage margin for the input address signal. A pair of gates connected to various points of the delay line detect at at least one point the presence of an address transition passing along the delay line.

Abstract: A bandgap voltage generator useful in CMOS integrated circuits using intrinsic bipolar transistors. The generator is comprised of a pair of bipolar voltage generator which utilizes bipolar devices in a common collector configuration. Therefore for the first time a bandgap voltage reference using the intrinsic vertical bipolar transistor can be implemented in a CMOS chip without the need for an operational amplifier.