Patents by Inventor Phaedon Avouris

Phaedon Avouris has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10613027
    Abstract: Techniques for forming nanoribbon or bulk graphene-based SPR sensors are provided. In one aspect, a method of forming a graphene-based SPR sensor is provided which includes the steps of: depositing graphene onto a substrate, wherein the substrate comprises a dielectric layer on a conductive layer, and wherein the graphene is deposited onto the dielectric layer; and patterning the graphene into multiple, evenly spaced graphene strips, wherein each of the graphene strips has a width of from about 50 nanometers to about 5 micrometers, and ranges therebetween, and wherein the graphene strips are separated from one another by a distance of from about 5 nanometers to about 50 micrometers, and ranges therebetween. Alternatively, bulk graphene may be employed and the dielectric layer is used to form periodic regions of differing permittivity. A testing apparatus and method of analyzing a sample using the present SPR sensors are also provided.
    Type: Grant
    Filed: August 1, 2016
    Date of Patent: April 7, 2020
    Assignee: International Business Machines Corporation
    Inventors: Phaedon Avouris, Damon B. Farmer, Yilei Li, Hugen Yan
  • Patent number: 10564097
    Abstract: Techniques for forming nanoribbon or bulk graphene-based SPR sensors are provided. In one aspect, a method of forming a graphene-based SPR sensor is provided which includes the steps of: depositing graphene onto a substrate, wherein the substrate comprises a dielectric layer on a conductive layer, and wherein the graphene is deposited onto the dielectric layer; and patterning the graphene into multiple, evenly spaced graphene strips, wherein each of the graphene strips has a width of from about 50 nanometers to about 5 micrometers, and ranges therebetween, and wherein the graphene strips are separated from one another by a distance of from about 5 nanometers to about 50 micrometers, and ranges therebetween. Alternatively, bulk graphene may be employed and the dielectric layer is used to form periodic regions of differing permittivity. A testing apparatus and method of analyzing a sample using the present SPR sensors are also provided.
    Type: Grant
    Filed: August 1, 2016
    Date of Patent: February 18, 2020
    Assignee: International Business Machines Corporation
    Inventors: Phaedon Avouris, Damon B. Farmer, Yilei Li, Hugen Yan
  • Patent number: 9772448
    Abstract: A signal transfer link includes a first plasmonic coupler, and a second plasmonic coupler spaced apart from the first plasmonic coupler to form a gap. A plasmonic conductive layer is formed over the gap to excite plasmons to provide signal transmission between the first and second plasmonic couplers.
    Type: Grant
    Filed: March 31, 2016
    Date of Patent: September 26, 2017
    Assignee: International Business Machines Corporation
    Inventors: Phaedon Avouris, Vasili Perebeinos, Mathias B. Steiner, Alberto Valdes Garcia
  • Patent number: 9759643
    Abstract: An Integrated Circuit (IC) chip with a lab-on-a-chip, a method of manufacturing the lab-on-a-chip and a method of using the lab-on-a-chip for fluid flow analysis in physical systems through combination with computer modeling. The lab-on-a-chip includes cavities in a channel layer and a capping layer, preferably transparent, covering the cavities. Gates control two dimensional (2D) lattice structures acting as heaters, light sources and/or sensors in the cavities, or fluid channels. The gates and two dimensional (2D) lattice structures may be at the cavity bottoms or on the capping layer. Wiring connects the gates and the 2D lattice structures externally.
    Type: Grant
    Filed: January 20, 2016
    Date of Patent: September 12, 2017
    Assignee: International Business Machines Corporation
    Inventors: Phaedon Avouris, Michael Engel, Claudius Feger, Ronaldo Giro, Rodrigo Ferreira, Mathias Steiner
  • Patent number: 9594018
    Abstract: Techniques for forming nanoribbon or bulk graphene-based SPR sensors are provided. In one aspect, a method of forming a graphene-based SPR sensor is provided which includes the steps of: depositing graphene onto a substrate, wherein the substrate comprises a dielectric layer on a conductive layer, and wherein the graphene is deposited onto the dielectric layer; and patterning the graphene into multiple, evenly spaced graphene strips, wherein each of the graphene strips has a width of from about 50 nanometers to about 5 micrometers, and ranges therebetween, and wherein the graphene strips are separated from one another by a distance of from about 5 nanometers to about 50 micrometers, and ranges therebetween. Alternatively, bulk graphene may be employed and the dielectric layer is used to form periodic regions of differing permittivity. A testing apparatus and method of analyzing a sample using the present SPR sensors are also provided.
    Type: Grant
    Filed: August 1, 2016
    Date of Patent: March 14, 2017
    Assignee: International Business Machines Corporation
    Inventors: Phaedon Avouris, Damon B. Farmer, Yilei Li, Hugen Yan
  • Publication number: 20160341663
    Abstract: Techniques for forming nanoribbon or bulk graphene-based SPR sensors are provided. In one aspect, a method of forming a graphene-based SPR sensor is provided which includes the steps of: depositing graphene onto a substrate, wherein the substrate comprises a dielectric layer on a conductive layer, and wherein the graphene is deposited onto the dielectric layer; and patterning the graphene into multiple, evenly spaced graphene strips, wherein each of the graphene strips has a width of from about 50 nanometers to about 5 micrometers, and ranges therebetween, and wherein the graphene strips are separated from one another by a distance of from about 5 nanometers to about 50 micrometers, and ranges therebetween. Alternatively, bulk graphene may be employed and the dielectric layer is used to form periodic regions of differing permittivity. A testing apparatus and method of analyzing a sample using the present SPR sensors are also provided.
    Type: Application
    Filed: August 1, 2016
    Publication date: November 24, 2016
    Inventors: Phaedon Avouris, Damon B. Farmer, Yelei Li, Hugen Yan
  • Publication number: 20160341661
    Abstract: Techniques for forming nanoribbon or bulk graphene-based SPR sensors are provided. In one aspect, a method of forming a graphene-based SPR sensor is provided which includes the steps of: depositing graphene onto a substrate, wherein the substrate comprises a dielectric layer on a conductive layer, and wherein the graphene is deposited onto the dielectric layer; and patterning the graphene into multiple, evenly spaced graphene strips, wherein each of the graphene strips has a width of from about 50 nanometers to about 5 micrometers, and ranges therebetween, and wherein the graphene strips are separated from one another by a distance of from about 5 nanometers to about 50 micrometers, and ranges therebetween. Alternatively, bulk graphene may be employed and the dielectric layer is used to form periodic regions of differing permittivity. A testing apparatus and method of analyzing a sample using the present SPR sensors are also provided.
    Type: Application
    Filed: August 1, 2016
    Publication date: November 24, 2016
    Inventors: Phaedon Avouris, Damon B. Farmer, Yilei Li, Hugen Yan
  • Publication number: 20160341662
    Abstract: Techniques for forming nanoribbon or bulk graphene-based SPR sensors are provided. In one aspect, a method of forming a graphene-based SPR sensor is provided which includes the steps of: depositing graphene onto a substrate, wherein the substrate comprises a dielectric layer on a conductive layer, and wherein the graphene is deposited onto the dielectric layer; and patterning the graphene into multiple, evenly spaced graphene strips, wherein each of the graphene strips has a width of from about 50 nanometers to about 5 micrometers, and ranges therebetween, and wherein the graphene strips are separated from one another by a distance of from about 5 nanometers to about 50 micrometers, and ranges therebetween. Alternatively, bulk graphene may be employed and the dielectric layer is used to form periodic regions of differing permittivity. A testing apparatus and method of analyzing a sample using the present SPR sensors are also provided.
    Type: Application
    Filed: August 1, 2016
    Publication date: November 24, 2016
    Inventors: Phaedon Avouris, Damon B. Farmer, Yilei Li, Hugen Yan
  • Patent number: 9423345
    Abstract: Techniques for forming nanoribbon or bulk graphene-based SPR sensors are provided. In one aspect, a method of forming a graphene-based SPR sensor is provided which includes the steps of: depositing graphene onto a substrate, wherein the substrate comprises a dielectric layer on a conductive layer, and wherein the graphene is deposited onto the dielectric layer; and patterning the graphene into multiple, evenly spaced graphene strips, wherein each of the graphene strips has a width of from about 50 nanometers to about 5 micrometers, and ranges therebetween, and wherein the graphene strips are separated from one another by a distance of from about 5 nanometers to about 50 micrometers, and ranges therebetween. Alternatively, bulk graphene may be employed and the dielectric layer is used to form periodic regions of differing permittivity. A testing apparatus and method of analyzing a sample using the present SPR sensors are also provided.
    Type: Grant
    Filed: June 24, 2014
    Date of Patent: August 23, 2016
    Assignee: International Business Machines Corporation
    Inventors: Phaedon Avouris, Damon B. Farmer, Yilei Li, Hugen Yan
  • Patent number: 9417387
    Abstract: A signal transfer link includes a first plasmonic coupler, and a second plasmonic coupler spaced apart from the first plasmonic coupler to form a gap. An insulator layer is formed over end portions of the first and second plasmonic couplers and in and over the gap. A plasmonic conductive layer is formed over the gap on the insulator layer to excite plasmons to provide signal transmission between the first and second plasmonic couplers.
    Type: Grant
    Filed: November 30, 2015
    Date of Patent: August 16, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Phaedon Avouris, Vasili Perebeinos, Mathias B. Steiner, Alberto Valdes Garcia
  • Patent number: 9413075
    Abstract: Structures and methods for cloaking an object to electromagnetic radiation at the microwave and terahertz frequencies include disposing a plurality of graphene sheets about the object. Intermediate layers of a transparent dielectric material can be disposed between graphene sheets to optimize the performance. In other embodiments, the graphene can be formulated into a paint formulation or a fabric and applied to the object. The structures and methods absorb at least a portion of the electromagnetic radiation at the microwave and terabyte frequencies.
    Type: Grant
    Filed: June 14, 2012
    Date of Patent: August 9, 2016
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Phaedon Avouris, Alberto V. Garcia, Chun-Yung Sung, Fengnian Xia, Hugen Yan
  • Patent number: 9412815
    Abstract: A semiconductor device includes a substrate having at least one electrically insulating portion. A first graphene electrode is formed on a surface of the substrate such that the electrically insulating portion is interposed between a bulk portion of the substrate and the first graphene electrode. A second graphene electrode formed on the surface of the substrate. The electrically insulating portion of the substrate is interposed between the bulk portion of the substrate and the second graphene electrode. The second graphene electrode is disposed opposite the first graphene electrode to define an exposed substrate area therebetween.
    Type: Grant
    Filed: September 25, 2014
    Date of Patent: August 9, 2016
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, KARLSRUHE INSTITUTE OF TECHNOLOGY, TAIWAN BLUESTONE TECHNOLOGY LTD.
    Inventors: Phaedon Avouris, Christos Dimitrakopoulos, Damon B. Farmer, Mathias B. Steiner, Michael Engel, Ralph Krupke, Yu-Ming Lin
  • Publication number: 20160216447
    Abstract: A signal transfer link includes a first plasmonic coupler, and a second plasmonic coupler spaced apart from the first plasmonic coupler to form a gap. A plasmonic conductive layer is formed over the gap to excite plasmons to provide signal transmission between the first and second plasmonic couplers.
    Type: Application
    Filed: March 31, 2016
    Publication date: July 28, 2016
    Inventors: PHAEDON AVOURIS, VASILI PEREBEINOS, MATHIAS B. STEINER, ALBERTO VALDES GARCIA
  • Publication number: 20160139019
    Abstract: An Integrated Circuit (IC) chip with a lab-on-a-chip, a method of manufacturing the lab-on-a-chip and a method of using the lab-on-a-chip for fluid flow analysis in physical systems through combination with computer modeling. The lab-on-a-chip includes cavities in a channel layer and a capping layer, preferably transparent, covering the cavities. Gates control two dimensional (2D) lattice structures acting as heaters, light sources and/or sensors in the cavities, or fluid channels. The gates and two dimensional (2D) lattice structures may be at the cavity bottoms or on the capping layer. Wiring connects the gates and the 2D lattice structures externally.
    Type: Application
    Filed: January 20, 2016
    Publication date: May 19, 2016
    Applicant: International Business Machines Corporation
    Inventors: Phaedon Avouris, Michael Engel, Claudius Feger, Ronaldo Giro, Rodrigo Ferreira, Mathias Steiner
  • Patent number: 9335471
    Abstract: A signal transfer link includes a first plasmonic coupler, and a second plasmonic coupler spaced apart from the first plasmonic coupler to form a gap. An insulator layer is formed over end portions of the first and second plasmonic couplers and in and over the gap. A plasmonic conductive layer is formed over the gap on the insulator layer to excite plasmons to provide signal transmission between the first and second plasmonic couplers.
    Type: Grant
    Filed: August 7, 2015
    Date of Patent: May 10, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Phaedon Avouris, Vasili Perebeinos, Mathias B. Steiner, Alberto Valdes Garcia
  • Patent number: 9310285
    Abstract: An Integrated Circuit (IC) chip with a lab-on-a-chip, a method of manufacturing the lab-on-a-chip and a method of using the lab-on-a-chip for fluid flow analysis in physical systems through combination with computer modeling. The lab-on-a-chip includes cavities in a channel layer and a capping layer, preferably transparent, covering the cavities. Gates control two dimensional (2D) lattice structures acting as heaters, light sources and/or sensors in the cavities, or fluid channels. The gates and two dimensional (2D) lattice structures may be at the cavity bottoms or on the capping layer. Wiring connects the gates and the 2D lattice structures externally.
    Type: Grant
    Filed: September 30, 2014
    Date of Patent: April 12, 2016
    Assignee: International Business Machines Corporation
    Inventors: Phaedon Avouris, Michael Engel, Claudius Feger, Ronaldo Giro, Rodrigo Ferreira, Mathias Steiner
  • Publication number: 20160091405
    Abstract: An Integrated Circuit (IC) chip with a lab-on-a-chip, a method of manufacturing the lab-on-a-chip and a method of using the lab-on-a-chip for fluid flow analysis in physical systems through combination with computer modeling. The lab-on-a-chip includes cavities in a channel layer and a capping layer, preferably transparent, covering the cavities. Gates control two dimensional (2D) lattice structures acting as heaters, light sources and/or sensors in the cavities, or fluid channels. The gates and two dimensional (2D) lattice structures may be at the cavity bottoms or on the capping layer. Wiring connects the gates and the 2D lattice structures externally.
    Type: Application
    Filed: September 30, 2014
    Publication date: March 31, 2016
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Phaedon Avouris, Michael Engel, Claudius Feger, Ronaldo Giro, Rodrigo Ferreira, Mathias Steiner
  • Publication number: 20160080092
    Abstract: A signal transfer link includes a first plasmonic coupler, and a second plasmonic coupler spaced apart from the first plasmonic coupler to form a gap. An insulator layer is formed over end portions of the first and second plasmonic couplers and in and over the gap. A plasmonic conductive layer is formed over the gap on the insulator layer to excite plasmons to provide signal transmission between the first and second plasmonic couplers.
    Type: Application
    Filed: November 30, 2015
    Publication date: March 17, 2016
    Inventors: PHAEDON AVOURIS, VASILI PEREBEINOS, MATHIAS B. STEINER, ALBERTO VALDES GARCIA
  • Patent number: 9250389
    Abstract: A signal transfer link includes a first plasmonic coupler, and a second plasmonic coupler spaced apart from the first plasmonic coupler to form a gap. An insulator layer is formed over end portions of the first and second plasmonic couplers and in and over the gap. A plasmonic conductive layer is formed over the gap on the insulator layer to excite plasmons to provide signal transmission between the first and second plasmonic couplers.
    Type: Grant
    Filed: August 16, 2013
    Date of Patent: February 2, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Phaedon Avouris, Vasili Perebeinos, Mathias B. Steiner, Alberto Valdes Garcia
  • Publication number: 20150369735
    Abstract: Techniques for forming nanoribbon or bulk graphene-based SPR sensors are provided. In one aspect, a method of forming a graphene-based SPR sensor is provided which includes the steps of: depositing graphene onto a substrate, wherein the substrate comprises a dielectric layer on a conductive layer, and wherein the graphene is deposited onto the dielectric layer; and patterning the graphene into multiple, evenly spaced graphene strips, wherein each of the graphene strips has a width of from about 50 nanometers to about 5 micrometers, and ranges therebetween, and wherein the graphene strips are separated from one another by a distance of from about 5 nanometers to about 50 micrometers, and ranges therebetween. Alternatively, bulk graphene may be employed and the dielectric layer is used to form periodic regions of differing permittivity. A testing apparatus and method of analyzing a sample using the present SPR sensors are also provided.
    Type: Application
    Filed: June 24, 2014
    Publication date: December 24, 2015
    Inventors: Phaedon Avouris, Damon B. Farmer, Yilei Li, Hugen Yan