Patents by Inventor Phaedon Avouris
Phaedon Avouris has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10613027Abstract: Techniques for forming nanoribbon or bulk graphene-based SPR sensors are provided. In one aspect, a method of forming a graphene-based SPR sensor is provided which includes the steps of: depositing graphene onto a substrate, wherein the substrate comprises a dielectric layer on a conductive layer, and wherein the graphene is deposited onto the dielectric layer; and patterning the graphene into multiple, evenly spaced graphene strips, wherein each of the graphene strips has a width of from about 50 nanometers to about 5 micrometers, and ranges therebetween, and wherein the graphene strips are separated from one another by a distance of from about 5 nanometers to about 50 micrometers, and ranges therebetween. Alternatively, bulk graphene may be employed and the dielectric layer is used to form periodic regions of differing permittivity. A testing apparatus and method of analyzing a sample using the present SPR sensors are also provided.Type: GrantFiled: August 1, 2016Date of Patent: April 7, 2020Assignee: International Business Machines CorporationInventors: Phaedon Avouris, Damon B. Farmer, Yilei Li, Hugen Yan
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Patent number: 10564097Abstract: Techniques for forming nanoribbon or bulk graphene-based SPR sensors are provided. In one aspect, a method of forming a graphene-based SPR sensor is provided which includes the steps of: depositing graphene onto a substrate, wherein the substrate comprises a dielectric layer on a conductive layer, and wherein the graphene is deposited onto the dielectric layer; and patterning the graphene into multiple, evenly spaced graphene strips, wherein each of the graphene strips has a width of from about 50 nanometers to about 5 micrometers, and ranges therebetween, and wherein the graphene strips are separated from one another by a distance of from about 5 nanometers to about 50 micrometers, and ranges therebetween. Alternatively, bulk graphene may be employed and the dielectric layer is used to form periodic regions of differing permittivity. A testing apparatus and method of analyzing a sample using the present SPR sensors are also provided.Type: GrantFiled: August 1, 2016Date of Patent: February 18, 2020Assignee: International Business Machines CorporationInventors: Phaedon Avouris, Damon B. Farmer, Yilei Li, Hugen Yan
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Patent number: 9772448Abstract: A signal transfer link includes a first plasmonic coupler, and a second plasmonic coupler spaced apart from the first plasmonic coupler to form a gap. A plasmonic conductive layer is formed over the gap to excite plasmons to provide signal transmission between the first and second plasmonic couplers.Type: GrantFiled: March 31, 2016Date of Patent: September 26, 2017Assignee: International Business Machines CorporationInventors: Phaedon Avouris, Vasili Perebeinos, Mathias B. Steiner, Alberto Valdes Garcia
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Patent number: 9759643Abstract: An Integrated Circuit (IC) chip with a lab-on-a-chip, a method of manufacturing the lab-on-a-chip and a method of using the lab-on-a-chip for fluid flow analysis in physical systems through combination with computer modeling. The lab-on-a-chip includes cavities in a channel layer and a capping layer, preferably transparent, covering the cavities. Gates control two dimensional (2D) lattice structures acting as heaters, light sources and/or sensors in the cavities, or fluid channels. The gates and two dimensional (2D) lattice structures may be at the cavity bottoms or on the capping layer. Wiring connects the gates and the 2D lattice structures externally.Type: GrantFiled: January 20, 2016Date of Patent: September 12, 2017Assignee: International Business Machines CorporationInventors: Phaedon Avouris, Michael Engel, Claudius Feger, Ronaldo Giro, Rodrigo Ferreira, Mathias Steiner
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Patent number: 9594018Abstract: Techniques for forming nanoribbon or bulk graphene-based SPR sensors are provided. In one aspect, a method of forming a graphene-based SPR sensor is provided which includes the steps of: depositing graphene onto a substrate, wherein the substrate comprises a dielectric layer on a conductive layer, and wherein the graphene is deposited onto the dielectric layer; and patterning the graphene into multiple, evenly spaced graphene strips, wherein each of the graphene strips has a width of from about 50 nanometers to about 5 micrometers, and ranges therebetween, and wherein the graphene strips are separated from one another by a distance of from about 5 nanometers to about 50 micrometers, and ranges therebetween. Alternatively, bulk graphene may be employed and the dielectric layer is used to form periodic regions of differing permittivity. A testing apparatus and method of analyzing a sample using the present SPR sensors are also provided.Type: GrantFiled: August 1, 2016Date of Patent: March 14, 2017Assignee: International Business Machines CorporationInventors: Phaedon Avouris, Damon B. Farmer, Yilei Li, Hugen Yan
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Publication number: 20160341663Abstract: Techniques for forming nanoribbon or bulk graphene-based SPR sensors are provided. In one aspect, a method of forming a graphene-based SPR sensor is provided which includes the steps of: depositing graphene onto a substrate, wherein the substrate comprises a dielectric layer on a conductive layer, and wherein the graphene is deposited onto the dielectric layer; and patterning the graphene into multiple, evenly spaced graphene strips, wherein each of the graphene strips has a width of from about 50 nanometers to about 5 micrometers, and ranges therebetween, and wherein the graphene strips are separated from one another by a distance of from about 5 nanometers to about 50 micrometers, and ranges therebetween. Alternatively, bulk graphene may be employed and the dielectric layer is used to form periodic regions of differing permittivity. A testing apparatus and method of analyzing a sample using the present SPR sensors are also provided.Type: ApplicationFiled: August 1, 2016Publication date: November 24, 2016Inventors: Phaedon Avouris, Damon B. Farmer, Yelei Li, Hugen Yan
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Publication number: 20160341661Abstract: Techniques for forming nanoribbon or bulk graphene-based SPR sensors are provided. In one aspect, a method of forming a graphene-based SPR sensor is provided which includes the steps of: depositing graphene onto a substrate, wherein the substrate comprises a dielectric layer on a conductive layer, and wherein the graphene is deposited onto the dielectric layer; and patterning the graphene into multiple, evenly spaced graphene strips, wherein each of the graphene strips has a width of from about 50 nanometers to about 5 micrometers, and ranges therebetween, and wherein the graphene strips are separated from one another by a distance of from about 5 nanometers to about 50 micrometers, and ranges therebetween. Alternatively, bulk graphene may be employed and the dielectric layer is used to form periodic regions of differing permittivity. A testing apparatus and method of analyzing a sample using the present SPR sensors are also provided.Type: ApplicationFiled: August 1, 2016Publication date: November 24, 2016Inventors: Phaedon Avouris, Damon B. Farmer, Yilei Li, Hugen Yan
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Publication number: 20160341662Abstract: Techniques for forming nanoribbon or bulk graphene-based SPR sensors are provided. In one aspect, a method of forming a graphene-based SPR sensor is provided which includes the steps of: depositing graphene onto a substrate, wherein the substrate comprises a dielectric layer on a conductive layer, and wherein the graphene is deposited onto the dielectric layer; and patterning the graphene into multiple, evenly spaced graphene strips, wherein each of the graphene strips has a width of from about 50 nanometers to about 5 micrometers, and ranges therebetween, and wherein the graphene strips are separated from one another by a distance of from about 5 nanometers to about 50 micrometers, and ranges therebetween. Alternatively, bulk graphene may be employed and the dielectric layer is used to form periodic regions of differing permittivity. A testing apparatus and method of analyzing a sample using the present SPR sensors are also provided.Type: ApplicationFiled: August 1, 2016Publication date: November 24, 2016Inventors: Phaedon Avouris, Damon B. Farmer, Yilei Li, Hugen Yan
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Patent number: 9423345Abstract: Techniques for forming nanoribbon or bulk graphene-based SPR sensors are provided. In one aspect, a method of forming a graphene-based SPR sensor is provided which includes the steps of: depositing graphene onto a substrate, wherein the substrate comprises a dielectric layer on a conductive layer, and wherein the graphene is deposited onto the dielectric layer; and patterning the graphene into multiple, evenly spaced graphene strips, wherein each of the graphene strips has a width of from about 50 nanometers to about 5 micrometers, and ranges therebetween, and wherein the graphene strips are separated from one another by a distance of from about 5 nanometers to about 50 micrometers, and ranges therebetween. Alternatively, bulk graphene may be employed and the dielectric layer is used to form periodic regions of differing permittivity. A testing apparatus and method of analyzing a sample using the present SPR sensors are also provided.Type: GrantFiled: June 24, 2014Date of Patent: August 23, 2016Assignee: International Business Machines CorporationInventors: Phaedon Avouris, Damon B. Farmer, Yilei Li, Hugen Yan
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Patent number: 9417387Abstract: A signal transfer link includes a first plasmonic coupler, and a second plasmonic coupler spaced apart from the first plasmonic coupler to form a gap. An insulator layer is formed over end portions of the first and second plasmonic couplers and in and over the gap. A plasmonic conductive layer is formed over the gap on the insulator layer to excite plasmons to provide signal transmission between the first and second plasmonic couplers.Type: GrantFiled: November 30, 2015Date of Patent: August 16, 2016Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Phaedon Avouris, Vasili Perebeinos, Mathias B. Steiner, Alberto Valdes Garcia
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Patent number: 9413075Abstract: Structures and methods for cloaking an object to electromagnetic radiation at the microwave and terahertz frequencies include disposing a plurality of graphene sheets about the object. Intermediate layers of a transparent dielectric material can be disposed between graphene sheets to optimize the performance. In other embodiments, the graphene can be formulated into a paint formulation or a fabric and applied to the object. The structures and methods absorb at least a portion of the electromagnetic radiation at the microwave and terabyte frequencies.Type: GrantFiled: June 14, 2012Date of Patent: August 9, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Phaedon Avouris, Alberto V. Garcia, Chun-Yung Sung, Fengnian Xia, Hugen Yan
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Patent number: 9412815Abstract: A semiconductor device includes a substrate having at least one electrically insulating portion. A first graphene electrode is formed on a surface of the substrate such that the electrically insulating portion is interposed between a bulk portion of the substrate and the first graphene electrode. A second graphene electrode formed on the surface of the substrate. The electrically insulating portion of the substrate is interposed between the bulk portion of the substrate and the second graphene electrode. The second graphene electrode is disposed opposite the first graphene electrode to define an exposed substrate area therebetween.Type: GrantFiled: September 25, 2014Date of Patent: August 9, 2016Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, KARLSRUHE INSTITUTE OF TECHNOLOGY, TAIWAN BLUESTONE TECHNOLOGY LTD.Inventors: Phaedon Avouris, Christos Dimitrakopoulos, Damon B. Farmer, Mathias B. Steiner, Michael Engel, Ralph Krupke, Yu-Ming Lin
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Publication number: 20160216447Abstract: A signal transfer link includes a first plasmonic coupler, and a second plasmonic coupler spaced apart from the first plasmonic coupler to form a gap. A plasmonic conductive layer is formed over the gap to excite plasmons to provide signal transmission between the first and second plasmonic couplers.Type: ApplicationFiled: March 31, 2016Publication date: July 28, 2016Inventors: PHAEDON AVOURIS, VASILI PEREBEINOS, MATHIAS B. STEINER, ALBERTO VALDES GARCIA
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Publication number: 20160139019Abstract: An Integrated Circuit (IC) chip with a lab-on-a-chip, a method of manufacturing the lab-on-a-chip and a method of using the lab-on-a-chip for fluid flow analysis in physical systems through combination with computer modeling. The lab-on-a-chip includes cavities in a channel layer and a capping layer, preferably transparent, covering the cavities. Gates control two dimensional (2D) lattice structures acting as heaters, light sources and/or sensors in the cavities, or fluid channels. The gates and two dimensional (2D) lattice structures may be at the cavity bottoms or on the capping layer. Wiring connects the gates and the 2D lattice structures externally.Type: ApplicationFiled: January 20, 2016Publication date: May 19, 2016Applicant: International Business Machines CorporationInventors: Phaedon Avouris, Michael Engel, Claudius Feger, Ronaldo Giro, Rodrigo Ferreira, Mathias Steiner
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Patent number: 9335471Abstract: A signal transfer link includes a first plasmonic coupler, and a second plasmonic coupler spaced apart from the first plasmonic coupler to form a gap. An insulator layer is formed over end portions of the first and second plasmonic couplers and in and over the gap. A plasmonic conductive layer is formed over the gap on the insulator layer to excite plasmons to provide signal transmission between the first and second plasmonic couplers.Type: GrantFiled: August 7, 2015Date of Patent: May 10, 2016Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Phaedon Avouris, Vasili Perebeinos, Mathias B. Steiner, Alberto Valdes Garcia
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Patent number: 9310285Abstract: An Integrated Circuit (IC) chip with a lab-on-a-chip, a method of manufacturing the lab-on-a-chip and a method of using the lab-on-a-chip for fluid flow analysis in physical systems through combination with computer modeling. The lab-on-a-chip includes cavities in a channel layer and a capping layer, preferably transparent, covering the cavities. Gates control two dimensional (2D) lattice structures acting as heaters, light sources and/or sensors in the cavities, or fluid channels. The gates and two dimensional (2D) lattice structures may be at the cavity bottoms or on the capping layer. Wiring connects the gates and the 2D lattice structures externally.Type: GrantFiled: September 30, 2014Date of Patent: April 12, 2016Assignee: International Business Machines CorporationInventors: Phaedon Avouris, Michael Engel, Claudius Feger, Ronaldo Giro, Rodrigo Ferreira, Mathias Steiner
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Publication number: 20160091405Abstract: An Integrated Circuit (IC) chip with a lab-on-a-chip, a method of manufacturing the lab-on-a-chip and a method of using the lab-on-a-chip for fluid flow analysis in physical systems through combination with computer modeling. The lab-on-a-chip includes cavities in a channel layer and a capping layer, preferably transparent, covering the cavities. Gates control two dimensional (2D) lattice structures acting as heaters, light sources and/or sensors in the cavities, or fluid channels. The gates and two dimensional (2D) lattice structures may be at the cavity bottoms or on the capping layer. Wiring connects the gates and the 2D lattice structures externally.Type: ApplicationFiled: September 30, 2014Publication date: March 31, 2016Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Phaedon Avouris, Michael Engel, Claudius Feger, Ronaldo Giro, Rodrigo Ferreira, Mathias Steiner
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Publication number: 20160080092Abstract: A signal transfer link includes a first plasmonic coupler, and a second plasmonic coupler spaced apart from the first plasmonic coupler to form a gap. An insulator layer is formed over end portions of the first and second plasmonic couplers and in and over the gap. A plasmonic conductive layer is formed over the gap on the insulator layer to excite plasmons to provide signal transmission between the first and second plasmonic couplers.Type: ApplicationFiled: November 30, 2015Publication date: March 17, 2016Inventors: PHAEDON AVOURIS, VASILI PEREBEINOS, MATHIAS B. STEINER, ALBERTO VALDES GARCIA
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Patent number: 9250389Abstract: A signal transfer link includes a first plasmonic coupler, and a second plasmonic coupler spaced apart from the first plasmonic coupler to form a gap. An insulator layer is formed over end portions of the first and second plasmonic couplers and in and over the gap. A plasmonic conductive layer is formed over the gap on the insulator layer to excite plasmons to provide signal transmission between the first and second plasmonic couplers.Type: GrantFiled: August 16, 2013Date of Patent: February 2, 2016Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Phaedon Avouris, Vasili Perebeinos, Mathias B. Steiner, Alberto Valdes Garcia
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Publication number: 20150369735Abstract: Techniques for forming nanoribbon or bulk graphene-based SPR sensors are provided. In one aspect, a method of forming a graphene-based SPR sensor is provided which includes the steps of: depositing graphene onto a substrate, wherein the substrate comprises a dielectric layer on a conductive layer, and wherein the graphene is deposited onto the dielectric layer; and patterning the graphene into multiple, evenly spaced graphene strips, wherein each of the graphene strips has a width of from about 50 nanometers to about 5 micrometers, and ranges therebetween, and wherein the graphene strips are separated from one another by a distance of from about 5 nanometers to about 50 micrometers, and ranges therebetween. Alternatively, bulk graphene may be employed and the dielectric layer is used to form periodic regions of differing permittivity. A testing apparatus and method of analyzing a sample using the present SPR sensors are also provided.Type: ApplicationFiled: June 24, 2014Publication date: December 24, 2015Inventors: Phaedon Avouris, Damon B. Farmer, Yilei Li, Hugen Yan