Abstract: The present invention provides a method for selectively placing carbon nanotubes on a substrate surface by using functionalized carbon nanotubes having an organic compound that is covalently bonded to such carbon nanotubes. The organic compound comprises at least two functional groups, the first of which is capable of forming covalent bonds with carbon nanotubes, and the second of which is capable of selectively bonding metal oxides. Such functionalized carbon nanotubes are contacted with a substrate surface that has at least one portion containing a metal oxide. The second functional group of the organic compound selectively bonds to the metal oxide, so as to selectively place the functionalized carbon nanotubes on the at least one portion of the substrate surface that comprises the metal oxide.

Abstract: Graphene-channel based devices and techniques for the fabrication thereof are provided. In one aspect, a semiconductor device includes a first wafer having at least one graphene channel formed on a first substrate, a first oxide layer surrounding the graphene channel and source and drain contacts to the graphene channel that extend through the first oxide layer; and a second wafer having a CMOS device layer formed in a second substrate, a second oxide layer surrounding the CMOS device layer and a plurality of contacts to the CMOS device layer that extend through the second oxide layer, the wafers being bonded together by way of an oxide-to-oxide bond between the oxide layers. One or more of the contacts to the CMOS device layer are in contact with the source and drain contacts. One or more other of the contacts to the CMOS device layer are gate contacts for the graphene channel.

Abstract: A photodetector which uses single or multi-layer graphene as the photon detecting layer is disclosed. Multiple embodiments are disclosed with different configurations of electrodes. In addition, a photodetector array comprising multiple photodetecting elements is disclosed for applications such as imaging and monitoring.

Abstract: A complementary metal oxide semiconductor (CMOS) device, e.g., a field effect transistor (FET), that includes at least one one-dimensional nanostructure that is typically a carbon-based nanomaterial, as the device channel, and a metal carbide contact that is self-aligned with the gate region of the device is described. The present invention also provides a method of fabricating such a CMOS device.

Abstract: A complementary metal oxide semiconductor (CMOS) device, e.g., a field effect transistor (FET), that includes at least one one-dimensional nanostructure that is typically a carbon-based nanomaterial, as the device channel, and a metal carbide contact that is self-aligned with the gate region of the device is described. The present invention also provides a method of fabricating such a CMOS device.

Abstract: A method of fabricating a nanotube field-effect transistor having unipolar characteristics and a small inverse sub-threshold slope includes forming a local gate electrode beneath the nanotube between drain and source electrodes of the transistor and doping portions of the nanotube. In a further embodiment, the method includes forming at least one trench in the gate dielectric (e.g., a back gate dielectric) and back gate adjacent to the local gate electrode. Another aspect of the invention is a nanotube field-effect transistor fabricated using such a method.

Abstract: A fabrication process for a nanoelectronic device and a device are provided. Channel material is deposited on a substrate to form a channel. A source metal contact and a drain metal contact are deposited on the channel material, and the source metal contact and the drain metal contact are on opposing ends of the channel material. A polyhydroxystyrene derivative is deposited on the channel material. A top gate oxide is deposited on the polymer layer. A top gate metal is deposited on the top gate oxide.

Abstract: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.

Abstract: A photodetector which uses single or multi-layer graphene as the photon detecting layer is disclosed. Multiple embodiments are disclosed with different configurations of electrodes. In addition, a photodetector array comprising multiple photodetecting elements is disclosed for applications such as imaging and monitoring.

Abstract: A method of fabricating a nanotube field-effect transistor having unipolar characteristics and a small inverse sub-threshold slope includes forming a local gate electrode beneath the nanotube between drain and source electrodes of the transistor and doping portions of the nanotube. In a further embodiment, the method includes forming at least one trench in the gate dielectric (e.g., a back gate dielectric) and back gate adjacent to the local gate electrode. Another aspect of the invention is a nanotube field-effect transistor fabricated using such a method.

Abstract: A method of fabricating a nanotube field-effect transistor having unipolar characteristics and a small inverse sub-threshold slope includes forming a local gate electrode beneath the nanotube between drain and source electrodes of the transistor and doping portions of the nanotube. In a further embodiment, the method includes forming at least one trench in the gate dielectric (e.g., a back gate dielectric) and back gate adjacent to the local gate electrode. Another aspect of the invention is a nanotube field-effect transistor fabricated using such a method.

Abstract: The present invention provides a method for selectively placing carbon nanotubes on a substrate surface by using functionalized carbon nanotubes having an organic compound that is covalently bonded to such carbon nanotubes. The organic compound comprises at least two functional groups, the first of which is capable of forming covalent bonds with carbon nanotubes, and the second of which is capable of selectively bonding metal oxides. Such functionalized carbon nanotubes are contacted with a substrate surface that has at least one portion containing a metal oxide. The second functional group of the organic compound selectively bonds to the metal oxide, so as to selectively place the functionalized carbon nanotubes on the at least one portion of the substrate surface that comprises the metal oxide.

Abstract: A method is provided for doping nano-components, including nanotubes, nanocrystals and nanowires, by exposing the nano-components to an organic amine-containing dopant. A method is also provided for forming a field effect transistor comprising a nano-component that has been doped using such a dopant.

Abstract: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.

Abstract: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.

Abstract: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.

Abstract: The present invention provides a method for selectively placing carbon nanotubes on a substrate surface by using functionalized carbon nanotubes having an organic compound that is covalently bonded to such carbon nanotubes. The organic compound comprises at least two functional groups, the first of which is capable of forming covalent bonds with carbon nanotubes, and the second of which is capable of selectively bonding metal oxides. Such functionalized carbon nanotubes are contacted with a substrate surface that has at least one portion containing a metal oxide. The second functional group of the organic compound selectively bonds to the metal oxide, so as to selectively place the functionalized carbon nanotubes on the at least one portion of the substrate surface that comprises the metal oxide.

Abstract: A complementary metal oxide semiconductor (CMOS) device, e.g., a field effect transistor (FET), that includes at least one one-dimensional nanostructure that is typically a carbon-based nanomaterial, as the device channel, and a metal carbide contact that is self-aligned with the gate region of the device is described. The present invention also provides a method of fabricating such a CMOS device.

Abstract: A method is provided for doping nano-components, including nanotubes, nanocrystals and nanowires, by exposing the nano-components to an organic amine-containing dopant. A method is also provided for forming a field effect transistor comprising a nano-component that has been doped using such a dopant.

Abstract: A method of fabricating a nanotube field-effect transistor having unipolar characteristics and a small inverse sub-threshold slope includes forming a local gate electrode beneath the nanotube between drain and source electrodes of the transistor and doping portions of the nanotube. In a further embodiment, the method includes forming at least one trench in the gate dielectric (e.g., a back gate dielectric) and back gate adjacent to the local gate electrode. Another aspect of the invention is a nanotube field-effect transistor fabricated using such a method.