Abstract: A method of operation of a non-volatile memory system includes: generating a test stimulus for a page in a memory array; measuring a test response from the page in the memory array based on the test stimulus; calculating a measured effective life of the page from the test response; and determining a use plan according to the measured effective life for accessing the page.

Abstract: The various implementations described herein include systems, methods and/or devices used to enable power sequencing and a data hardening module in a storage device. In one aspect, the method includes determining whether a power supply voltage provided to the storage device is lower than an under-voltage threshold. The method further includes, in accordance with a determination that the power supply voltage is lower than the under-voltage threshold, performing a power fail operation, the power fail operation including: (1) signaling a power fail condition to a plurality of controllers on the storage device, (2) transferring data held in volatile memory to non-volatile memory, and (3) removing power from the plurality of controllers on the storage device.

Abstract: Systems, methods and/or devices are used to enable dynamic erase block grouping. In one aspect, the method includes (1) maintaining metadata for each erase block of a plurality of erase blocks in a data storage system, wherein a respective metadata for a respective erase block includes one or more characteristics of the respective erase block, (2) allocating a set of erase blocks, of the plurality of erase blocks, as unassociated erase blocks, (3) selecting two or more unassociated erase blocks in accordance with characteristics of the unassociated erase blocks so as to select unassociated erase blocks with similar characteristics, and (4) grouping the two or more unassociated erase blocks with similar characteristics to form a super block.

Abstract: A system and method of operation of a data storage system includes: a memory die for determining a middle read threshold; a control unit, coupled to the memory die, for calculating a lower read threshold and an upper read threshold based on the middle read threshold and a memory element age; and a memory interface, coupled to the memory die, for reading a memory page of the memory die using the lower read threshold, the middle read threshold, or the upper read threshold for compensating for a charge variation.

Abstract: A method of operation of a storage control system includes: generating encoded data having a proportional data distribution for writing to a memory device; identifying a marginal block when an erase block is read from the memory device; and generating a marginal tag for the marginal block, the marginal tag having a non-proportional data distribution different from the proportional data distribution.

Abstract: A method of operation of a data storage system includes: identifying a target block; configuring a command setting for maximizing a data retention period of the target block for refreshing the target block; writing a pre-archived memory block to the target block based on the command setting; and updating an archive status for sending to a host device.

Abstract: An electronic assembly and method of manufacturing includes: an airflow bracket having a circular rail and an airflow tab, the airflow bracket electrically coupling the circular rail and the airflow tab; a top board attached to the circular rail for electrically coupling the top board and the circular rail; and a bottom board attached to the circular rail for electrically coupling the top board and the circular rail, the bottom board positioned to form a thermal channel between the top board and the bottom board for directing air through a vent opening of the circular rail.

Abstract: An electronic system, and a method of manufacture thereof, including: a substrate; an electrical device over the substrate; and a surface mount heat sink next to the electrical device, the surface mount heat sink having an extruded shape characteristic of being formed using an extrusion mechanism.

Abstract: A storage device and method for performing a self-refresh operation are disclosed. In one embodiment, a storage device determines that the self-refresh operation needs to be performed. In response to that determination, the storage device performs the self-refresh operation by reading data from the memory and writing the data back to the memory without transferring the data outside of the storage device.

Abstract: A method of operation of a storage control system including: providing a memory controller; accessing a volatile memory table by the memory controller; writing a non-volatile semiconductor memory for persisting changes in the volatile memory table; and restoring a logical-to-physical table in the volatile memory table, after a power cycle, by restoring a random access memory with a logical-to-physical partition from a most recently used list.

Abstract: A memory controller configures a plurality of word lines associated with a respective block of a 3D memory device in a first configuration, where the first configuration includes a set of configuration parameters for each word line of the plurality of word lines determined at least in part on the vertical positions of each word line relative to a substrate of the 3D memory device and, while the plurality of word lines are configured in the first configuration, writes data to and reads data from the respective block. For the respective block, the memory controller: adjusts a first parameter in the respective set of configuration parameters corresponding to a respective word line of the plurality of word lines in response to detecting a first trigger condition as to the respective word line and, after adjusting the first parameter, writes data to and reads data from the respective word line.

Abstract: A storage control system, and a method of operation thereof, including: a power-down module for powering off a memory sub-system; a decay estimation module, coupled to the power-down module, for estimating a power-off decay rate upon the memory sub-system powered up, the power-off decay rate is for indicating how much data in the memory sub-system has decayed while the memory sub-system has been powered down; and a recycle module, coupled to the decay estimation module, for recycling an erase block for data retention based on the power-off decay rate.

Abstract: A storage system, and a method of data hardening in the storage system, including: a de-glitch module configured for a detection of a power failure event; a write page module, coupled to the de-glitch module, the write page module configured for an execution of a cache write command based on the power failure event to send a cache page from a cache memory to a storage channel controller, wherein the cache memory is a volatile memory; and a signal empty module, coupled to the write page module, the signal empty module configured for a generation of a sleep signal to shut down a host bus adapter, wherein the host bus adapter interfaces with the storage channel controller to write the cache page back to the cache memory upon a power up of the host bus adapter and the storage channel controller.

Abstract: A storage system, and a method of data management in the storage system, with non-volatile memory device characteristics determined during an inspection of non-volatile memory devices before a runtime operation of a storage device in the storage system including: a controller in the storage system: a drive-level control unit configured for an update of operational capabilities based on the non-volatile memory device characteristics during the runtime operation of the storage device and for a group of the non-volatile memory devices based on the operational capabilities; and a memory control unit, coupled to the drive-level control unit, the memory control unit configured to receive the operational capabilities for control of the non-volatile memory devices.

Abstract: An electronic system and method of operation thereof includes: a control unit for receiving a patterned signal; a recognizer module, coupled to the control unit, for recognizing an unique trigger from the patterned signal; an operation module, coupled to the recognizer module, for detecting an operational mode from the unique trigger; and a change module, coupled to the operation module, for configuring a system state change of a memory sub-system based on the operational mode.

Abstract: A test system, and a method of manufacture thereof, including: a thermal management head including a heat spreader; an electronic device in direct contact with the heat spreader; and an electrical current for transferring energy between the heat spreader and the electronic device.

Abstract: A method of operation of a storage control system includes: calculating a throttle threshold; identifying a detection point based on the throttle threshold; and calculating a number of write/erase cycles based on the detection point and the throttle threshold for writing a memory device.

Abstract: A method of operation of a data storage system includes: providing a power monitor module for detecting a loss of host power; interrupting a unit controller by the power monitor module; configuring a memory controller by the unit controller; and writing a non-volatile memory array for storing in-flight data and contents of a system control random access memory in a multi-level cell NAND flash device in response to detecting the loss of the host power.

Abstract: A method of operation of a storage control system includes: determining a bit error rate of a page; calculating a slope based on the bit error rate; and adjusting a threshold voltage for the page based on the slope for reading a memory device.

Abstract: A method of operation of a storage control system includes: partitioning memory channels with memory devices; selecting a super device with one of the memory devices from one of the memory channels; selecting a super block associated with the super device; and determining a location of a parity within the super block when the super block is formed.