Abstract: A battery module includes at least one battery cell; a first plate disposed on one side of the at least one battery cell to dissipate heat generated by the at least one battery cell externally; and a second plate disposed on the other side of the at least one battery cell to dissipate heat generated by the at least one battery cell externally, wherein an electrode lead of the at least one battery cell is disposed between the first plate and the second plate, and is disposed to be biased toward the first plate.

Abstract: A cell unit includes a plurality of battery cells disposed on both surfaces of a unit plate. A case accommodates the cell unit and provided with a cooling device on at least one surface of the case. The unit plate includes a plurality of receiving spaces formed by a plate portion, having a flat surface, and a side portion protruding upwardly and downwardly of the plate portion from both sides of the plate portion. The plurality of battery cells are received in each of the receiving spaces.

Abstract: Disclosed are airbag integrated moving display and a control method where the airbag-integrated display includes a display movable to a forward or rearward position according to a driving mode of a vehicle, and an airbag mounted to the rear of the display and being configured to move along with a movement of the display, vary a level of inflation of the airbag based on at least one of a position of the display or a distance from a driver of the vehicle.

Abstract: Disclosed herein are an apparatus and method for a multi-cloud service platform. The apparatus includes one or more processors and executable memory for storing at least one program executed by the one or more processors. The at least one program may receive a service request from a user client device, generate a multi-cloud infrastructure service using multiple clouds in response to the service request, make the multiple clouds interoperate with mufti-cloud infrastructure in order to provide the multi-cloud infrastructure service, and generate a multi-cloud application runtime environment corresponding to the multi-cloud infrastructure service.

Abstract: This invention relates to a positive photosensitive resin composition that includes a siloxane copolymer of two kinds of reactive silane compounds with specific structures wherein residual impurities such as unreacted monomers and catalysts are minimized, and a UV absorber including one or more kinds of phenol hydroxyl groups capable of crosslinking and an alkoxy group. Accordingly, the resin composition exhibits excellent performances such as sensitivity, resolution, and degree of planarization, and also has excellent weatherability and UV absorbance, thereby providing excellent panel reliability.

Abstract: A secondary battery includes an electrode assembly having a positive electrode provided with a positive electrode tab, a separator, and a negative electrode provided with a negative electrode tab, the positive electrode, the separator, and the negative electrode being wound, the electrode assembly having a core part at a center thereof; a can configured to receive the electrode assembly therein, the negative electrode tab being connected to the can; a cap assembly coupled to an opening of the can, the positive electrode tab being connected to the cap assembly; and a reinforcing member provided on an end of the separator exposed beyond the positive electrode or the negative electrode to prevent heat of the positive electrode tab or the negative electrode tab from being transferred to the separator.

Abstract: Disclosed are a method and apparatus for reusing wastewater. The method for reusing wastewater disclosed herein includes: generating a mixed wastewater by mixing multiple types of wastewater (S20); performing a first purification by passing the mixed wastewater through a flocculation-sedimentation unit (S40); performing a second purification by passing an effluent of the flocculation-sedimentation unit through a membrane bioreactor (MBR) (S60); performing a third purification by passing an effluent of the MBR through a reverse-osmosis membrane unit (S80); and reusing an effluent of the reverse-osmosis membrane unit as cooling water or industrial water (S100).

Abstract: An integrated control apparatus for an autonomous vehicle includes: a movable control device corresponding to a portable device that performs steering, gear-shifting, acceleration, and braking of a vehicle by a user's control when a driving mode is shifted from an autonomous driving mode to a manual driving mode; and a fixed display device controlled in a touch manner to perform other functions other than steering, gear-shifting, acceleration, and braking, wherein a steering dial switch, a gear-shifting slide switch, an acceleration rotary switch, and a brake button switch are disposed in the movable control device and are manipulated differently.

Abstract: A method for manufacturing a gas diffusion layer for a fuel cell wherein carbon nanotubes are impregnated into Korean paper, thereby enhancing electroconductivity, and a gas diffusion layer manufactured thereby. The method for manufacturing a gas diffusion layer for a fuel cell which is to manufacture a gas diffusion layer as a constituent member of a unit cell in a fuel cell, includes a support preparation step of preparing a support with Korean paper; a dispersion preparation step of dispersing a carbon substance in a solvent to form a dispersion, a coating step of coating the support with the dispersion, and a thermal treatment step of thermally treating the dispersion-coated support to fix the carbon substance to the support.

Abstract: A semiconductor device includes a multi-channel active pattern, a plurality of gate structures on the multi-channel active pattern and spaced apart from each other in a first direction, the plurality of gate structures including a gate electrode that extends in a second direction different from the first direction, a source/drain recess between the adjacent gate structures, and a source/drain pattern on the multi-channel active pattern in the source/drain recess, wherein the source/drain pattern includes: a semiconductor liner layer including silicon-germanium and extending along the source/drain recess, a semiconductor filling layer including silicon-germanium on the semiconductor liner layer, and at least one or more semiconductor insertion layers between the semiconductor liner layer and the semiconductor filling layer, and wherein the at least one or more semiconductor insertion layers have a saddle structure.

Abstract: A device for inspecting a welded state between a tab, which protrudes from a plurality of electrodes stacked with a separator therebetween, and a lead welded to the tab. The device for inspecting a welded state may include a pair of tab probes, which are in contact with the tab and spaced apart from each other in a width direction of the tab, and a pair of lead probes which are in contact with the lead and spaced apart from each other in a width direction of the lead. Related methods for inspecting the welded state between a tab and a lead thereby are provided.

Abstract: Provided are a hyperparameter optimizer and method for optimizing hyperparameters and a spiking neural network processing unit. The optimizer includes a statistical analyzer configured to receive training data and perform statistical analysis on the training data, an objective function generator configured to generate hyperparameter-specific objective functions by using a statistical analysis value of the statistical analyzer, and an optimal hyperparameter selector configured to select optimal hyperparameters according to certain rules on the basis of the hyperparameter-specific objective functions.

Abstract: A semiconductor device includes: first and second channel structures spaced apart from each other in a first direction; and a source/drain pattern, between the first and second channel structures, including a first interface contacting the first channel structure and a second interface contacting the second channel structure, wherein, in a plan view, the source/drain pattern includes first and second side walls opposite to each other in a second direction, the first side wall includes a first sloped side wall, a second sloped side wall, and a first horizontal intersection at which the first and second sloped side walls meet, a width of the first interface is different from a width of the second interface, in the second direction, and a distance from the first interface to the first horizontal intersection is greater than a distance from the second interface to the first horizontal intersection, in the first direction.

Abstract: A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.

Abstract: A multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.

Abstract: A dry cleaning apparatus includes a chamber, a substrate support supporting a substrate within the chamber, a shower head arranged in an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser light therethrough toward the substrate support, a plasma generator generating plasma from the dry cleaning gas, and a laser irradiator irradiating the laser light on the substrate through the optical window and the plasma to heat the substrate.

Abstract: A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.

Abstract: A semiconductor device includes a first fin type pattern on a substrate, a second fin type pattern, parallel to the first fin type pattern, on the substrate, and an epitaxial pattern on the first and second fin type patterns. The epitaxial pattern may include a shared semiconductor pattern on the first fin type pattern and the second fin type pattern. The shared semiconductor pattern may include a first sidewall adjacent to the first fin type pattern and a second sidewall adjacent to the second fin type pattern. The first sidewall may include a first lower facet, a first upper facet on the first lower facet and a first connecting curved surface connecting the first lower and upper facets. The second sidewall may include a second lower facet, a second upper facet on the second lower facet and a second connecting curved surface connecting the second lower and upper facets.