Abstract: A cache managing method of a display driving apparatus may be provided. The display driving apparatus including an encoder to generate compressed data by compressing raw data, a memory to store the compressed data, and a decoder to restore the compressed data and including a payload cache may be provided. The cache managing method including requesting an access to the compressed data, and managing the payload cache using a linked list according to the access request to the compressed data may be provided.

Abstract: A graphics processing unit includes a shader configured to perform one operation among tessellation and texturing. The shader generates level-of-detail (LOD) using geometry information for the tessellation or texturing and adjusts the LOD using non-geometry information for the tessellation or texturing.

Abstract: In a method of cleaning a substrate, a protecting liquid may be sprayed to a surface of the substrate from a first position in a first spray direction. Cleaning droplets may be injected on to the surface of the substrate. The protecting liquid may be sprayed to the surface of the substrate from a second position different from the first position in a second spray direction. For example, the protecting liquid may be always sprayed from the central portion toward the edge portions in the substrate so that the protecting liquid on the substrate may have a uniform thickness.

Abstract: A semiconductor device includes a substrate, a first active fin and a second active fin on the substrate, respectively, a plurality of first epitaxial layers on the first active fin and on the second active fin, respectively, a plurality of second epitaxial layers on the plurality of first epitaxial layers, a bridge layer connecting the plurality of second epitaxial layers to each other, and a third epitaxial layer on the bridge layer.

Abstract: A tessellation method includes assigning a tessellation factor to each of a plurality of points in a patch and generating, in the vicinity of a first point of the plurality of points, at least one new point based on a first tessellation factor assigned to the first point. The at least one first new point corresponds to the first point.

Abstract: Semiconductor devices include a strain-inducing layer capable of applying a strain to a channel region of a transistor included in a miniaturized electronic device, and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate having a channel region; a pair of source/drain regions provided on the substrate and arranged on both sides of the channel region in a first direction; and a gate structure provided on the channel region and comprising a gate electrode pattern extending in a second direction that is different from the first direction, a gate dielectric layer disposed between the channel region and the gate electrode pattern, and a gate spacer covering respective lateral surfaces of the gate electrode pattern and the gate dielectric layer. At least one of the source/drain regions includes a first strain-inducing layer and a second strain-inducing layer.

Abstract: A semiconductor device includes a substrate, a first active fin and a second active fin on the substrate, respectively, a plurality of first epitaxial layers on the first active fin and on the second active fin, respectively, a plurality of second epitaxial layers on the plurality of first epitaxial layers, a bridge layer connecting the plurality of second epitaxial layers to each other, and a third epitaxial layer on the bridge layer.

Abstract: A method of operating a graphics processing unit includes determining, based on input data, whether to perform a tiling operation before or after a tessellation operation and performing the tiling operation according to the determination result. Performing the tiling operation after the tessellation operation if the input data is not a patch, and if a geometry of the patch is at the out-side of a convex hull defined by control points of the patch. Performing the tiling operation after the tessellation operation if a geometry of a tessellated primitive corresponding to the patch changes according to a shading operation.

Abstract: A semiconductor device may include first and second fins formed side by side on a substrate, a first elevated doped region formed on the first fin and having a first doping concentration of impurities, a second elevated doped region formed on the second fin, and a first bridge connecting the first elevated doped region and the second elevated doped region to each other. Methods of manufacturing such a semiconductor device are also disclosed.

Abstract: A method of cleaning a substrate includes providing the substrate, the substrate including a metal material film, performing physical cleaning of the substrate, performing chemical cleaning of the substrate, and drying a surface of the substrate. Performing the chemical cleaning includes supplying a chemical cleaning solution including an anionic surfactant at a concentration that is equal to or greater than a critical micelle concentration (CMC) onto the surface of the substrate.

Abstract: Semiconductor devices include a strain-inducing layer capable of applying a strain to a channel region of a transistor included in a miniaturized electronic device, and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate having a channel region; a pair of source/drain regions provided on the substrate and arranged on both sides of the channel region in a first direction; and a gate structure provided on the channel region and comprising a gate electrode pattern extending in a second direction that is different from the first direction, a gate dielectric layer disposed between the channel region and the gate electrode pattern, and a gate spacer covering respective lateral surfaces of the gate electrode pattern and the gate dielectric layer. At least one of the source/drain regions includes a first strain-inducing layer and a second strain-inducing layer.

Abstract: A semiconductor device may include first and second fins formed side by side on a substrate, a first elevated doped region formed on the first fin and having a first doping concentration of impurities, a second elevated doped region formed on the second fin, and a first bridge connecting the first elevated doped region and the second elevated doped region to each other. Methods of manufacturing such a semiconductor device are also disclosed.

Abstract: A semiconductor cleaning process system includes a process chamber configured to hold a semiconductor substrate, a cleaning solution supply unit configured to provide a cleaning solution to the process chamber, the cleaning solution including an organic fluoride, an organic acid and an organic solvent, a recycling unit configured to collect the cleaning solution discharged from the process chamber, a first concentration measuring unit configured to evaluate a fluorine concentration of a collected solution in the recycling unit, and a sub-cleaning solution supply unit configured to provide the organic fluoride to the cleaning solution supply unit based on the fluorine concentration evaluated by the first concentration measuring unit.

Abstract: A tessellation method includes determining whether a previous tag the same as a current tag of a current patch is stored in a cache, and transmitting a previous tessellation pattern corresponding to the previous tag stored in the cache to a domain shader when a cache hit occurs. The method may further include, when a cache miss occurs, generating a current tessellation pattern corresponding to the current patch using a tessellator and transmitting the generated current tessellation pattern to the domain shader, and storing the generated current tessellation pattern in the cache.

Abstract: A method for domain shading may include analyzing graphics state data, and generating all first primitives through a single-pass domain shading or generating only second primitives which are visible among the first primitives through a two-pass domain shading based on a result of the analysis.

Abstract: Semiconductor devices include a strain-inducing layer capable of applying a strain to a channel region of a transistor included in a miniaturized electronic device, and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate having a channel region; a pair of source/drain regions provided on the substrate and arranged on both sides of the channel region in a first direction; and a gate structure provided on the channel region and comprising a gate electrode pattern extending in a second direction that is different from the first direction, a gate dielectric layer disposed between the channel region and the gate electrode pattern, and a gate spacer covering respective lateral surfaces of the gate electrode pattern and the gate dielectric layer. At least one of the source/drain regions includes a first strain-inducing layer and a second strain-inducing layer.

Abstract: Semiconductor devices include a strain-inducing layer capable of applying a strain to a channel region of a transistor included in a miniaturized electronic device, and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate having a channel region; a pair of source/drain regions provided on the substrate and arranged on both sides of the channel region in a first direction; and a gate structure provided on the channel region and comprising a gate electrode pattern extending in a second direction that is different from the first direction, a gate dielectric layer disposed between the channel region and the gate electrode pattern, and a gate spacer covering respective lateral surfaces of the gate electrode pattern and the gate dielectric layer. At least one of the source/drain regions includes a first strain-inducing layer and a second strain-inducing layer.

Abstract: A method of generating tessellation data include analyzing patch data of each of a plurality of patches; generating shared data that is shared by the patches, non-shared data that are not shared by the patches, and attribute data on an attribute of control points of each of the patches from the patch data according to a result of the analyzing; and compressing the non-shared data and the attribute data.

Abstract: A semiconductor device includes a substrate, a first active fin and a second active fin on the substrate, respectively, a plurality of first epitaxial layers on the first active fin and on the second active fin, respectively, a plurality of second epitaxial layers on the plurality of first epitaxial layers, a bridge layer connecting the plurality of second epitaxial layers to each other, and a third epitaxial layer on the bridge layer.

Abstract: A bus interface device for requesting and receiving data from a memory controller connected to a bus includes a request buffer and a request merger. The request buffer is configured to store a first data request signal for requesting first data and a second data request signal for requesting second data. The request merger is configured to determine whether to merge the first and second data request signals, and transmit a merged request signal for requesting the first data and the second data from the memory controller to the bus upon determining that the first and second data request signals are to be merged.