Patents by Inventor Seshadri Ganguli
Seshadri Ganguli has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140017408Abstract: Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl4, TaCl5 and HfCl4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)3-aAlHa]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.Type: ApplicationFiled: June 28, 2013Publication date: January 16, 2014Inventors: Srinivas Gandikota, Xinliang Lu, Shih Chung Chen, Wei Tang, Jing Zhou, Seshadri Ganguli, David Thompson, Jeffrey W. Anthis, Atif Noori, Faruk Gungor, Dien-Yeh Wu, Mei Chang, Xinyu Fu, Yu Lei
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Publication number: 20140011354Abstract: Embodiments of the invention provide methods for forming materials on a substrate used for metal gate and other applications. In one embodiment, a method includes forming a cobalt stack over a barrier layer disposed on a substrate by depositing a cobalt layer during a deposition process, exposing the cobalt layer to a plasma to form a plasma-treated cobalt layer during a plasma process, and repeating the cobalt deposition process and the plasma process to form the cobalt stack containing a plurality of plasma-treated cobalt layers. The method further includes exposing the cobalt stack to an oxygen source gas to form a cobalt oxide layer from an upper portion of the cobalt stack during a surface oxidation process and heating the remaining portion of the cobalt stack to a temperature within a range from about 300° C. to about 500° C. to form a crystalline cobalt film during a thermal annealing crystallization process.Type: ApplicationFiled: August 1, 2013Publication date: January 9, 2014Applicant: APPLIED MATERIALS, INC.Inventors: Yu LEI, Xinyu FU, Anantha SUBRAMANI, Seshadri GANGULI, Srinivas GANDIKOTA
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Patent number: 8592305Abstract: Provided are methods of providing aluminum-doped TaSix films. Doping TaSix films allows for the tuning of the work function value to make the TaSix film better suited as an N-metal for NMOS applications. One such method relates to soaking a TaSix film with an aluminum-containing compound. Another method relates to depositing a TaSix film, soaking with an aluminum-containing compound, and repeating for a thicker film. A third method relates to depositing an aluminum-doped TaSix film using tantalum, aluminum and silicon precursors.Type: GrantFiled: November 15, 2011Date of Patent: November 26, 2013Assignee: Applied Materials, Inc.Inventors: Xinliang Lu, Seshadri Ganguli, Shih Chung Chen, Atif Noori, Maitreyee Mahajani, Mei Chang
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Publication number: 20130295759Abstract: Provided are methods for making metal gates suitable for FinFET structures. The methods described herein generally involve forming a high-k dielectric material on a semiconductor substrate; depositing a high-k dielectric cap layer over the high-k dielectric material; depositing a PMOS work function layer having a positive work function value; depositing an NMOS work function layer; depositing an NMOS work function cap layer over the NMOS work function layer; removing at least a portion of the PMOS work function layer or at least a portion of the NMOS work function layer; and depositing a fill layer. Depositing a high-k dielectric cap layer, depositing a PMOS work function layer or depositing a NMOS work function cap layer may comprise atomic layer deposition of TiN, TiSiN, or TiAlN. Either PMOS or NMOS may be deposited first.Type: ApplicationFiled: April 18, 2013Publication date: November 7, 2013Inventors: Xinliang Lu, Seshadri Ganguli, Atif Noori, Maitreyee Mahajani, Shih Chung Chen, Yu Lei, Xinyu Fu, Wei Tang, Srinivas Gandikota
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Patent number: 8563424Abstract: Methods for forming cobalt silicide are provided. One method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the substrate during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.Type: GrantFiled: April 26, 2012Date of Patent: October 22, 2013Assignee: Applied Materials, Inc.Inventors: Seshadri Ganguli, Sang-Ho Yu, See-Eng Phan, Mei Chang, Amit Khandelwal, Hyoung-Chan Ha
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Patent number: 8524600Abstract: Embodiments of the invention provide methods for forming materials on a substrate used for metal gate and other applications. In one embodiment, a method includes forming a cobalt stack over a barrier layer disposed on a substrate by depositing a cobalt layer during a deposition process, exposing the cobalt layer to a plasma to form a plasma-treated cobalt layer during a plasma process, and repeating the cobalt deposition process and the plasma process to form the cobalt stack containing a plurality of plasma-treated cobalt layers. The method further includes exposing the cobalt stack to an oxygen source gas to form a cobalt oxide layer from an upper portion of the cobalt stack during a surface oxidation process and heating the remaining portion of the cobalt stack to a temperature within a range from about 300° C. to about 500° C. to form a crystalline cobalt film during a thermal annealing crystallization process.Type: GrantFiled: June 30, 2011Date of Patent: September 3, 2013Assignee: Applied Materials, Inc.Inventors: Yu Lei, Xinyu Fu, Anantha Subramani, Seshadri Ganguli, Srinivas Gandikota
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Publication number: 20130146468Abstract: Methods for depositing ruthenium-containing films are disclosed herein. In some embodiments, a method of depositing a ruthenium-containing film on a substrate may include depositing a ruthenium-containing film on a substrate using a ruthenium-containing precursor, the deposited ruthenium-containing film having carbon incorporated therein; and exposing the deposited ruthenium-containing layer to a hydrogen-containing gas to remove at least some of the carbon from the deposited ruthenium-containing film. In some embodiments, the hydrogen-containing gas exposed ruthenium-containing film may be subsequently exposed to an oxygen-containing gas to at least one of remove at least some carbon from or add oxygen to the ruthenium-containing film. In some embodiments, the deposition and exposure to the hydrogen-containing gas and optionally, the oxygen-containing gas may be repeated to deposit the ruthenium-containing film to a desired thickness.Type: ApplicationFiled: December 8, 2011Publication date: June 13, 2013Applicant: APPLIED MATERIALS, INC.Inventors: HOON KIM, SANG HYEOB LEE, WEI TI LEE, SESHADRI GANGULI, HYOUNG-CHAN HA, SANG HO YU
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Publication number: 20130122697Abstract: Provided are methods of providing aluminum-doped TaSix films. Doping TaSix films allows for the tuning of the work function value to make the TaSix film better suited as an N-metal for NMOS applications. One such method relates to soaking a TaSix film with an aluminum-containing compound. Another method relates to depositing a TaSix film, soaking with an aluminum-containing compound, and repeating for a thicker film. A third method relates to depositing an aluminum-doped TaSix film using tantalum, aluminum and silicon precursors.Type: ApplicationFiled: November 15, 2011Publication date: May 16, 2013Applicant: Applied Materials, Inc.Inventors: Xinliang Lu, Seshadri Ganguli, Michael S. Chen, Atif Noori, Shih Chung Chen, Maitreyee Mahajani, Mei Chang
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Publication number: 20130115383Abstract: Provided are methods of depositing pure metal and aluminum alloy metal films. Certain methods comprises contacting a substrate surface with first and second precursors, the first precursor comprising an aluminum precursor selected from dimethylaluminum hydride, alane coordinated to an amine, and a compound having a structure represented by: wherein R is a C1-C6 alkyl group, and the second precursor comprising a metal halide. Other methods relate to sequentially exposing a substrate to a first and second precursor, the first precursor comprising an aluminum precursor as described above, and the second precursor comprising Ti(NR?2)4 or Ta(NR?2)5, wherein R? is an alkyl, alkenyl, alkynyl, keto or aldehyde group.Type: ApplicationFiled: November 6, 2012Publication date: May 9, 2013Inventors: Xinliang Lu, David Thompson, Jeffrey W. Anthis, Mei Chang, Seshadri Ganguli, Wei Tang, Srinivas Gandikota, Atif Noori
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Publication number: 20120322262Abstract: Provided are methods of depositing N-Metals onto a substrate. Methods include first depositing an initiation layer. The initiation layer may comprise or consist of cobalt, tantalum, nickel, titanium or TaAlC. These initiation layers can be used to deposit TaCx.Type: ApplicationFiled: June 18, 2012Publication date: December 20, 2012Applicant: Applied Materials, Inc.Inventors: Seshadri Ganguli, Xinliang Lu, Atif Noori, Maitreyee Mahajani, Shih Chung Chen, Mei Chang
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Publication number: 20120322250Abstract: Provided are methods of depositing N-Metals onto a substrate. Some methods comprise providing an initiation layer of TaM or TiM layer on a substrate, wherein M is selected from aluminum, carbon, noble metals, gallium, silicon, germanium and combinations thereof; and exposing the substrate having the TaM or TiM layer to a treatment process comprising soaking the surface of the substrate with a reducing agent to provided a treated initiation layer.Type: ApplicationFiled: June 18, 2012Publication date: December 20, 2012Applicant: Applied Materials, Inc.Inventors: Seshadri Ganguli, Xinliang Lu, Atif Noori, Maitreyee Mahajani, Shih Chung Chen, Mei Chang
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Publication number: 20120264291Abstract: Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.Type: ApplicationFiled: April 20, 2012Publication date: October 18, 2012Applicant: Applied Materials, Inc.Inventors: Seshadri Ganguli, Schubert S. Chu, Mei Chang, Sang-Ho Yu, Kevin Moraes, See-Eng Phan
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Publication number: 20120258602Abstract: Methods for formation and treatment of pure metal layers using CVD and ALD techniques are provided. In one or more embodiments, the method includes forming a metal precursor layer and treating the metal precursor layer to a hydrogen plasma to reduce the metal precursor layer to form a metal layer. In one or more embodiments, treating the metal precursor layer includes exposing the metal precursor layer to a high frequency-generated hydrogen plasma. Methods of preventing a hydrogen plasma from penetrating a metal precursor layer are also provided.Type: ApplicationFiled: April 8, 2011Publication date: October 11, 2012Applicant: Applied Materials, Inc.Inventors: Anantha K. Subramani, John C. Forster, Seshadri Ganguli, Michael S. Jackson, Xinliang Lu, Wei W. Wang, Xinyu Fu, Yu Lei
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Publication number: 20120252207Abstract: Embodiments of the invention provide methods for forming materials on a substrate used for metal gate and other applications. In one embodiment, a method includes forming a cobalt stack over a barrier layer disposed on a substrate by depositing a cobalt layer during a deposition process, exposing the cobalt layer to a plasma to form a plasma-treated cobalt layer during a plasma process, and repeating the cobalt deposition process and the plasma process to form the cobalt stack containing a plurality of plasma-treated cobalt layers. The method further includes exposing the cobalt stack to an oxygen source gas to form a cobalt oxide layer from an upper portion of the cobalt stack during a surface oxidation process and heating the remaining portion of the cobalt stack to a temperature within a range from about 300° C. to about 500° C. to form a crystalline cobalt film during a thermal annealing crystallization process.Type: ApplicationFiled: June 30, 2011Publication date: October 4, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Yu Lei, Xinyu Fu, Anantha Subramani, Seshadri Ganguli, Srinivas Gandikota
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Publication number: 20120214303Abstract: Embodiments of the invention generally provide methods for forming cobalt silicide. In one embodiment, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the substrate during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.Type: ApplicationFiled: April 26, 2012Publication date: August 23, 2012Inventors: SESHADRI GANGULI, Sang-Ho Yu, See-Eng Phan, Mei Chang, Amit Khandelwal, Hyoung-Chan Ha
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Publication number: 20120141667Abstract: Methods for forming barrier/seed layers for interconnect structures are provided herein. In some embodiments, a method of processing a substrate having an opening formed in a first surface of the substrate, the opening having a sidewall and a bottom surface, the method may include forming a layer comprising manganese (Mn) and at least one of ruthenium (Ru) or cobalt (Co) on the sidewall and the bottom surface of the opening, the layer having a first surface adjacent to the sidewall and bottom surface of the opening and a second surface opposite the first surface, wherein the second surface comprises predominantly at least one of ruthenium (Ru) or cobalt (Co) and wherein a predominant quantity of manganese (Mn) in the layer is not disposed proximate the second surface; and depositing a conductive material on the layer to fill the opening.Type: ApplicationFiled: December 9, 2011Publication date: June 7, 2012Applicant: APPLIED MATERIALS, INC.Inventors: HOON KIM, SANG HO YU, SESHADRI GANGULI
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Patent number: 8187970Abstract: Methods for forming cobalt silicide materials are disclosed herein. In one example, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The exemplary method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the first cobalt silicide layer during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.Type: GrantFiled: December 15, 2010Date of Patent: May 29, 2012Assignee: Applied Materials, Inc.Inventors: Seshadri Ganguli, Sang-Ho Yu, See-Eng Phan, Mei Chang, Amit Khandelwal, Hyoung-Chan Ha
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Patent number: 8110489Abstract: Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.Type: GrantFiled: April 11, 2007Date of Patent: February 7, 2012Assignee: Applied Materials, Inc.Inventors: Seshadri Ganguli, Schubert S. Chu, Mei Chang, Sang-Ho Yu, Kevin Moraes, See-Eng Phan
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Publication number: 20120012465Abstract: Methods for forming barrier/seed layers for interconnect structures are provided herein. In some embodiments, a method of processing a substrate having an opening formed in a first surface of the substrate, the opening having a sidewall and a bottom surface, the method may include forming a layer comprising manganese (Mn) and at least one of ruthenium (Ru) or cobalt (Co) on the sidewall and bottom surface of the opening; and depositing a conductive material on the layer to fill the opening. In some embodiments, one of ruthenium (Ru) or cobalt (Co) is deposited on the sidewall and bottom surface of the opening. The materials may be deposited by chemical vapor deposition (CVD) or by physical vapor deposition (PVD).Type: ApplicationFiled: June 23, 2011Publication date: January 19, 2012Applicant: APPLIED MATERIALS, INC.Inventors: HOON KIM, WEI TI LEE, SANG HO YU, SESHADRI GANGULI, HYOUNG-CHAN HA, SANG HYEOB LEE
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Publication number: 20110312148Abstract: Methods for depositing ruthenium-containing films are provided herein. In some embodiments, a method of depositing a ruthenium-containing film on a substrate may include depositing a ruthenium-containing film on a substrate using a ruthenium-containing precursor, the deposited ruthenium-containing film having carbon incorporated therein; and exposing the deposited ruthenium-containing film to an oxygen-containing gas to remove at least some of the carbon from the deposited ruthenium-containing film. In some embodiments, the oxygen-containing gas exposed ruthenium-containing film may be annealed in a hydrogen-containing gas to remove at least some oxygen from the ruthenium-containing film. In some embodiments, the deposition, exposure, and annealing may be repeated to deposit the ruthenium-containing film to a desired thickness.Type: ApplicationFiled: June 8, 2011Publication date: December 22, 2011Applicant: APPLIED MATERIALS, INC.Inventors: HOON KIM, SANG-HYEOB LEE, SANG HO YU, WEI TI LEE, SESHADRI GANGULI, HYOUNG-CHAN HA