Abstract: The present disclosure relates to an anti-glare film including an acrylic substrate and a coating layer located on at least one side of the acrylic substrate, which has a specific rate of change of band area ratio in a graph derived from the result of Raman spectroscopy performed for the coating layer in the thickness direction. It also relates to a polarizing plate, and a display apparatus including the same.

Abstract: A method includes forming an active pattern on a substrate, the active pattern comprising first semiconductor patterns and second semiconductor patterns, which are alternately stacked, forming a capping pattern on a top surface and a sidewall of the active pattern, performing a deposition process on the capping pattern to form an insulating layer, and forming a sacrificial gate pattern intersecting the active pattern on the insulating layer. The capping pattern has a crystalline structure and is in physical contact with sidewalls of the first semiconductor patterns and sidewalls of the second semiconductor patterns.

Abstract: A semiconductor device including an active pattern extending in a first direction; a channel pattern on the active pattern and including vertically stacked semiconductor patterns; a source/drain pattern in a recess in the active pattern; a gate electrode on the active pattern and extending in a second direction crossing the first direction, the gate electrode surrounding a top surface, at least one side surface, and a bottom surface of each of the semiconductor patterns; and a gate spacer covering a side surface of the gate electrode and having an opening to the semiconductor patterns, wherein the source/drain pattern includes a buffer layer covering inner sides of the recess, the buffer layer includes an outer side surface and an inner side surface, which are opposite to each other, and each of the outer and inner side surfaces is a curved surface that is convexly curved toward a closest gate electrode.

Abstract: An electromagnetic wave transceiver according to an embodiment includes a waveguide assembly including an assembly fastening hole, a circuit board including a board fastening hole and disposed to be stacked on the waveguide assembly, and a fastener interference-fitted or transition-fitted into the assembly fastening hole and the board fastening hole to couple the waveguide assembly and the circuit board.

Abstract: A semiconductor device may include a first active fin, a second active fin and a gate structure. The first active fin may extend in a first direction on a substrate and may include a first straight line extension portion, a second straight line extension portion, and a bent portion between the first and second straight line extension portions. The second active fin may extend in the first direction on the substrate. The gate structure may extend in a second direction perpendicular to the first direction on the substrate. The gate structure may cross one of the first and second straight line extension portions of the first active fin and may cross the second active fin.

Abstract: A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

Abstract: A semiconductor device includes; a substrate including a first region and a second region, a first active pattern extending upward from the first region, a first superlattice pattern on the first active pattern, a first active fin centrally disposed on the first active pattern, a first gate electrode disposed on the first active fin, and first source/drain patterns disposed on opposing sides of the first active fin and on the first active pattern. The first superlattice pattern includes at least one first semiconductor layer and at least one first blocker-containing layer, and the first blocker-containing layer includes at least one of oxygen, carbon, fluorine and nitrogen.

Abstract: Proposed is an etching composition capable of adjusting an etching selectivity of a tungsten film with respect to a tungsten film. An etching method using the same etching composition is also proposed. The etching composition includes an inorganic acid, an oxidizing agent, an additive represented by Formula 1, and the remaining proportion of water. The etching composition exhibits remarkable effects of providing a high etching rate for a titanium nitride film and of adjusting the etching selectivity of a titanium nitride film with respect to a tungsten film to be in a range of 1 to 15.

Abstract: Provided is a washing machine including a main body having a first inlet, a drum arranged inside the main body to accommodate laundry, and a door configured to open and close the first inlet, wherein the door includes a second inlet to allow laundry to be introduced into the drum while the first inlet closed, an auxiliary door configured to open and close the second inlet, and a restraining device configured to restrain the auxiliary door such that the auxiliary door remains locked onto the door, and the main body includes a pressing device arranged inside the main body and configured to press the restraining device such that the restraining device locks the auxiliary door and to release from the retraining device such that the restraining device unlocks the auxiliary door.

Abstract: A battery pack may include a pack housing including an accommodation space and a venting passage connecting the accommodation space to outside, a partition wall member partitioning the accommodation space, a plurality of pack units including battery cells, the plurality of pack units disposed in the accommodation space, and a blocking unit provided between the accommodation space and the venting passage, the blocking unit blocking a substance generated in the pack unit from entering the venting passage.

Abstract: A battery module includes a cell stack in which a plurality of battery cell assemblies are stacked; a busbar assembly electrically connected to the cell stack; and a cover assembly covering the busbar assembly, wherein at least one of the plurality of battery cell assemblies includes at least two battery cells opposing each other; and a support member supporting the at least two battery cells, and wherein the busbar assembly is coupled to the support member.

Abstract: A battery pack includes a pack housing having an internal space; and a battery module including a plurality of battery cells and accommodated in the internal space, wherein the pack housing includes a support frame opposing at least one side of the battery module and having a venting passage formed therein, and wherein the support frame includes a plurality of guide blocks inserted into the battery module; and an opening disposed between the plurality of guide blocks and communicating with the venting passage and the internal space.

Abstract: A battery pack includes a cell assembly; and a pack case accommodating the cell assembly in an internal space, wherein the pack case includes a lower plate having a plate shape and a frame disposed to protrude upwardly from the lower plate, wherein the frame has an inlet through which flame flows from the cell assembly into the internal space of the frame, and a flow path through which the flame flowing in from the inlet flows, wherein the flow path is formed by a partition wall disposed in the length direction of the frame, and wherein at least two or more of the partition walls are spaced apart from each other in the height direction of the frame such that a direction of the flow path is able to be changed.

Abstract: A battery cell assembly includes a first battery cell, a second battery cell disposed to face the first battery cell, a protective member disposed between the first battery cell and the second battery cell, and a support member coupled to at least one side of the protective member and supporting the protective member. The protective member includes a heat insulating member preventing heat propagation between the first battery cell and the second battery cell.

Abstract: A battery pack includes a pack housing including a lower frame and a side frame; and one or more battery modules accommodated in the pack housing. The battery module includes a plurality of cell stacks in which a plurality of battery cells are stacked in a first direction; and a plurality of end plates fastened to the lower frame. The plurality of end plates and the plurality of cell stacks are alternately disposed in the first direction.

Abstract: A battery pack includes a plurality of battery modules each including a plurality of battery cells; and a pack housing having a plurality of accommodation spaces in which the plurality of battery modules are accommodated, wherein the pack housing includes a plurality of venting holes disposed on an external surface of the pack housing and configured to discharge gas generated from the plurality of battery modules, and wherein each of the plurality of accommodation spaces is configured to communicate with a different venting hole among the plurality of venting holes.

Abstract: A battery pack includes at least one battery module; and a pack housing having an internal space in which the battery module is accommodated, wherein the at least one battery module includes a cell stack including a plurality of battery cells; and an upper cover covering an upper surface of the cell stack and coupled to the pack housing.

Abstract: A battery device includes a plurality of cell assemblies each including a plurality of battery cells; a housing including an accommodation space in which the plurality of cell assemblies are accommodated; and a cooling plate installed in the housing to cool the plurality of cell assemblies, wherein the cooling plate includes a plurality of seating portions on which the cell assemblies are seated, respectively, and a heat transfer delay portion disposed between the plurality of seating portions and preventing or reducing heat transfer between the seating portions adjacent to each other.

Abstract: A semiconductor device includes: a first active pattern on a substrate and including a first active fin and a second active fin; a device isolation layer defining the first active pattern; a gate electrode crossing the first active pattern; a first source/drain pattern and a second source/drain pattern on the first active fin and the second active fin, respectively; an inner fin spacer between the first and second source/drain patterns; and a buffer layer between the first and second active fins, wherein the inner fin spacer includes: a first inner spacer portion contacting the first source/drain pattern; a second inner spacer portion contacting the second source/drain pattern; and an inner extended portion extending from the first and second inner spacer portions, wherein the inner extended portion is between the first and second active fins, wherein the buffer layer has a dielectric constant higher than that of the inner fin spacer.

Abstract: The present disclosure relates to a process solution composition for EUV photolithography and a pattern forming method using same. The process solution composition includes 0.00001% to 0.01% by weight of a fluorine-based surfactant, 0.00001% to less than 0.01% by weight of a pattern reinforcing agent represented by Formula (1), and 0.00001% to 0.001% by weight of a material selected from the group consisting of triol derivatives, tetraol derivatives, and mixture thereof, and the balance being water.