Abstract: Disclosed herein is a bipolar transistor and a method of manufacturing the same. The present invention provides a biolar transistor in which a collector layer, a base layer and an emitter layer are transversely arranged in sequence through a monocrystal silicon layer formed on an insulation layer of a semiconductor substrate and a method of manufacturing the same. According to the present invention, parasitic capacity between a base and a collector can be reduced and p-n junction capacity between the collector and the substrate can be removed, thereby to achieve high-speed operation.

Abstract: A high-frequency heating apparatus comprises a power supply including a commercial power supply or a battery, a frequency converter for converting the power of the power supply into high-frequency power, a boosting transformer for increasing the voltage of the output of the frequency converter, and a magnetron for receiving the output from the boosting transformer. The apparatus further comprises a shield member made of a non-magnetic conductive material and forming a substantially electrical open loop in the winding direction of the primary winding between the primary and secondary windings of the boosting transformer. The shield member is connected to the core or the housing of the boosting transformer thereby substantially containing a high-voltage circuit in the shield space. High safety of the high-frequency heating apparatus is thus assured without grounding the housing.

Abstract: A power supply for a magnetron includes a rectifying circuit, a switching circuit, and a transformer. The rectifying circuit converts an ac-power source signal into a dc-power source signal. The switching circuit converts the dc-power source signal output from the rectifying circuit into a high-frequency signal in accordance with a driving circuit. A transformer connected to the switching circuit converts the high-frequency signal into a high-voltage high-frequency signal for driving the magnetron. The transformer includes a primary winding connected to the switching circuit, a secondary winding connected to the magnetron, a tertiary winding connected to a cathode heater of said magnetron, and a fourth winding connected to the driving circuit. The coupling coefficient between the fourth winding and the second winding is larger than the coupling coefficient between the fourth winding and the primary winding.

Abstract: In a method of manufacturing a semiconductor device comprising melting an amorphous or polycrystalline first semiconductor layer formed on the surface of a first dielectric layer by irradiating energy rays thereon, and converting the same into single crystals by the subsequent lowering of the temperature and forming a second dielectric layer and a second semiconductor layer on the first semiconductor layer. Energy rays are irradiated under the condition capable of melting the first semiconductor layer through the second semiconductor layer and the second dielectric layer and, after the completion of the conversion into single crystals, the second semiconductor layer and the second dielectric layer are eliminated through etching.

Abstract: A method of manufacturing a semiconductor crystalline layer comprising the following steps: a step of forming, on a single crystalline substrate composed of a semiconductor having a main face on <001> face and having a diamond-type crystal structure, an orientation flat face in which the direction of the intersection with the main face makes a predetermined angle relative to the direction <110> on the main face and which serves as a reference for defining the direction of arranging semiconductor chips formed on the substrate; a step of forming, on the main face of the substrate, an insulation layer at least a portion of which has an opening reaching the main face and which insulates the substrate at the region other than the opening; a step of forming a semiconductor layer composed of a polycrystalline or amorphous semiconductor on the surface of the opening and the insulation layer; a step of forming a reflectivity varying layer which is in the direction in parallel with or vertical to the inters

Abstract: In a high-frequency heating device for driving a magnetron at a high frequency between 20 and 50 KHz, the magnetron is provided with a plurality of choke coils, each of which consists of a magnetic core having a sectional area between 40 to 70 mm.sup.2 and an electric wire around the magnetic core and having a diameter between 1.2 and 1.6 mm. In such a construction, the magnetron can be driven, using the high frequency with reduced thermal loss of the choke coil and restrained heat generation.

Abstract: A vertical MOS transistor having its channel length determined by the thickness of an insulating layer provided over a semiconductor substrate, rather than by the depth of a trench in which the transistor is formed. As a result, the characteristics of the transistor as relatively unaffected by doping and heat-treatment steps which are performed during formation. Also, the transistor may be formed so as to occupy very little surface area, making it suitable for application in high-density DRAMs.

Abstract: Disclosed herein is a process for producing a single crystal layer of a semiconductor device, which comprises the steps of providing an oxide insulator layer separated by an opening part for seeding, on a major surface of a single crystal semiconductor substrate of the cubic system, providing a polycrystalline or amorphous semiconductor layer on the entire surface of the insulator layer inclusive of the opening part, then providing a protective layer comprising at least a reflective or anti-reflection film comprising strips of a predetermined width, in a predetermined direction relative to the opening part and at a predetermined interval, the protective layer capable of controlling the temperature distributions in the semiconductor layer at the parts corresponding to the stripes or the parts not corresponding to the stripes, thereby completing a base for producing a semiconductor device, thereafter the surface of the base is irradiated with an energy beam through the striped reflective or anti-reflection film

Abstract: A power feeding apparatus which is used in a high-frequency heater or the like, is further power-converted by a transformer after the power provided by the power supply such as commercial power supply or the like has been converted into the high-frequency power by a transducer including a semiconductor, feeds the converted power into the load having the unidirectional electrical current characteristics of magnetron or the like. The generating voltage is dropped so that the stable power may be fed without the corona discharge and the acr discharge to be caused, the insulating withstand voltage between the windings of the transformer, the pulling of the wirings, and the insulating withstand voltage may be reduced.

Abstract: An apparatus for determining crystal orientation comprises: a polarizer for polarizing an incident light beam; a polarization analyzer for selecting light having a selected polarization direction in Raman scattered light; and a synchronizer for enabling synchronous rotations of the polarizer and the polarization analyzer.

Abstract: In a method for determining orientation of a crystal with polarization selective Raman microprobe spectroscopy, polarization angles of both light incident on the crystal and Raman scattered light emitted from the crystal are varied coincidently in ordinary circumstances and only either one of the polarization angles is varied in only case that intensity of the scattered beam does not change substantially in spite of the coincident variation of both the polarization angles.

Abstract: In a method of manufacturing a semiconductor device of a three-dimensional structure having a semiconductor substrate and another single crystal semiconductor layer formed thereon, the another single crystal semiconductor layer is prepared by melting a vapor-deposited amorphous or polycrystalline semiconductor layer by the energy of laser beams then solidifying and converting the layer into single crystals. For initiating the melting at selected regions of the layer, the layer is formed at the surface thereof with a silicon nitride film of a uniform thickness and a silicon nitride film with a thickness at the region corresponding to the selected region different from that of the remaining region. The region thicker or thinner than other region reflects the laser energy at different reflectivity thereby to provide a desired temperature distribution.

Abstract: A power feed apparatus in which a means for by-passing the current reversely biasing the load is used for the normally used rectification means when the power converted by the transformer is fed to the reversely blocking characteristics like magnetron, whereby the price is lower and the shape is more compact without the use of the rectifier, because of the combination construction of the reverse bias current by-pass means and the inductance element provided in the load current path with respect to the non-linear load like the magnetron.

Abstract: A zone melting apparatus, in accordance with the present invention for monocrystallizing a semiconductor layer in a layered substance, includes: an upper elongated heater for zone melting of the semiconductor layer, the upper heater being disposed above and parallel to the semiconductor layer; a plurality of lower elongated heaters for heating the whole layered substance, the lower heaters being disposed in a plane below and parallel to the layered substance and the axis of each of the lower heaters being substantially perpendicular to the axis of the upper heater; a plurality of power suppliers for supplying electric power to the lower heaters; one or more temperature sensors for estimating the temperature of the layered substance; and a controller for controlling the power suppliers in response to the output of the temperature sensor(s), the controller making control so that the temperature of the central portion of the layered substance is slightly lower than that of the outer portions thereof.

Abstract: In an exhaust passage (37) of a heating apparatus, a piezoelectric device sensor (26) is provided for detecting the heating condition of a heated object (32), such as food in a microwave open heating chamber (31). A piezoelectric device of the sensor may be contained within a metal casing (53) and be hermetically sealed. An output signal from the piezoelectric device sensor is processed by circuitry including an amplifier (27) having a predetermined frequency response so that only particular frequency components lower than that of a conventional a.c. supply are amplified and then compared with a threshold to detect whether a sufficient amount of moisture of hot steam is emitted from the object in the heating chamber of the heating apparatus. The invention may be applied to prevent overheating of food in a microwave oven, temperature control of chemical processes, or the like, to control heating time.

Abstract: A method for manufacturing a semiconductor device, which comprises: a first process for producing a semiconductor layer of polycrystalline silicon or amorphous silicon on the surface of a substrate of insulator or a substrate made up by forming an insulating layer on a basic semiconductor; a second process for producing an island of semiconductor layer surrounded by dielectric materials from the semiconductor layer; a third process for producing a film of Si.sub.3 N.sub.4 on the island of semiconductor layer, or on a film of SiO.sub.2 formed on the island; a fourth process for removing the film of Si.sub.3 N.sub.4 at a predetermined region on the island; and a fifth process for irradiating with scanning an energy beam to the island of semiconductor layer so as to melt and recrystallize the island, thereby monocrystallizing or increasing the size of crystal grains at at least a partial region thereof.

Abstract: A microwave heating apparatus is arranged such that the output from a single semiconductor oscillator is divided into two parts by a power divider and the parts are amplified by a pair of respective amplifiers and the amplified parts are fed into a heating chamber by two antennas, the phase of the two microwave parts being adjusted so as to combine their power in the heating chamber.

Abstract: In an apparatus which produces high frequency electromagnetic waves, a choke portion is provided in a leakage transmission path, which choke portion has a groove wall corresponding to a grounded conductor, a number of strip conductors arranged with a line width a and a pitch p, and a groove bottom, so as to minimize leakage propagation in the longitudinal direction of the groove. Further, this choke portion is designed so that the characteristic impedance of its portion is changed in a region shorter than .lambda./4 of the frequency to be used. As a result, the depth and width of the groove can also be made less than .lambda./4.

Abstract: A high-frequency heating appliance includes a high-frequency heating source constituted of a solid state high-frequency generating section with its oscillation frequency in the 915 MHz band, a heating chamber which, in the frequency band, produces the TE.sub.201 mode providing an electric field uniform in the direction of the height of the heating chamber, and a door constituting one wall of the heating chamber for access to the heating chamber to insert and remove an object of heating. The high-frequency heating source is located substantially in the middle of the upper or lower wall surface of the heating chamber and remote from the upper and lower hinges of the door.

Abstract: The present invention is a high frequency heating apparatus which has a high frequency oscillator for radiating high frequency energy when energized by a high voltage, a waveguide for propagating the high frequency energy from the high frequency oscillator to a heating cavity or heating chamber of the apparatus in which an object to be heated is placed, and an electric wave radiating member provided between and extending into the waveguide and the heating chamber. The electric wave radiating member both couples, through electric waves, the waveguide with the heating chamber and also radiates the high frequency energy into the heating chamber for uniform heat distribution within the heating chamber.