Patents by Inventor Shih-Chung Chen
Shih-Chung Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11618126Abstract: A polishing pad conditioning apparatus includes a base, a fiber, and a polymer protruding from a surface of the base and encompassing the fiber.Type: GrantFiled: July 6, 2020Date of Patent: April 4, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Cheng-Ping Chen, Shih-Chung Chen, Sheng-Tai Peng, Hung-Lin Chen
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Patent number: 11571782Abstract: The present disclosure provides a chemical mechanical polishing system having a unitary platen. The platen includes one or more recesses within the platen to house various components for the polishing/planarization process. In one embodiment, the platen includes a first recess and a second recess. The first recess is located under the second recess. An end point detector is placed in the first recess and a detector cover may be placed in the second recess. A sealing mean is provided in a space between the end point detector and the detector cover to prevent any external or foreign materials from coming in contact with the end point detector. A fastener used for fastening the detector cover to the platen also provides addition protection to prevent foreign materials from coming in contact with components received in the recesses.Type: GrantFiled: November 1, 2019Date of Patent: February 7, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tsung-Lung Lai, Cheng-Ping Chen, Shih-Chung Chen, Sheng-Tai Peng, Rong-Long Hung
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Publication number: 20230009839Abstract: A system and method for chemical mechanical polishing (“CMP”) pad replacement on a CMP processing tool. A platen carrier having two or more platens is positioned within a platen cleaning process module. Each platen includes a CMP pad affixed thereto, and is capable of being independently rotated during operations. When a pad requires replacement, the platen carrier rotates towards a pad tearer tool, which extends and pivots to remove the used pad from the platen as the carrier rotates. A pad tape replacement module is positioned above the CMP tool with pad tape extending from a supply roll to a recycle roll. As the pad tape transits through the module, a backing of the tape is separated and recycled. A pad disposed in the pad tape is then applied to a platen via a pressure roller.Type: ApplicationFiled: January 20, 2022Publication date: January 12, 2023Inventors: Shih-Chung Chen, Wei-Kang Tu, Ching-Wen Cheng, Chun Yan Chen
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Patent number: 11552082Abstract: Memory devices and methods of forming memory devices are described. The memory devices comprise two work-function metal layers, where one work-function layer has a lower work-function than the other work-function layer. The low work-function layer may reduce gate-induced drain leakage current losses. Methods of forming memory devices are also described.Type: GrantFiled: August 25, 2020Date of Patent: January 10, 2023Assignee: Applied Materials, Inc.Inventors: Sung-Kwan Kang, Gill Yong Lee, Sang Ho Yu, Shih Chung Chen, Jeffrey W. Anthis
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Publication number: 20230005945Abstract: Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an ?-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).Type: ApplicationFiled: September 9, 2022Publication date: January 5, 2023Applicant: Applied Materials, Inc.Inventors: Jacqueline S. Wrench, Yixiong Yang, Yong Wu, Wei V. Tang, Srinivas Gandikota, Yongjing Lin, Karla M Bernal Ramos, Shih Chung Chen
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Publication number: 20220367236Abstract: Some embodiments of the disclosure relate to methods of modifying a heater pedestal to improve temperature and thickness uniformity. Some embodiments of the disclosure relate to the modified heater pedestals with improved temperature and thickness uniformity. In some embodiments, the height of support mesas in different regions of the pedestal are modified to increase temperature uniformity. In some embodiments, the heater elements are moved above the vacuum channel and purge channel to increase temperature uniformity. In some embodiments, the edge ring is modified to be coplanar with the top of a supported substrate.Type: ApplicationFiled: October 8, 2021Publication date: November 17, 2022Applicant: Applied Materials, Inc.Inventors: Muhannad Mustafa, Yongjing Lin, Satish Radhakrishnan, Haoyan Sha, Shih Chung Chen, Mario D. Silvetti, Mandyam Sriram, Vijay D. Parkhe
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Patent number: 11476267Abstract: Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an ?-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).Type: GrantFiled: May 18, 2020Date of Patent: October 18, 2022Assignee: Applied Materials, Inc.Inventors: Jacqueline S. Wrench, Yixiong Yang, Yong Wu, Wei V. Tang, Srinivas Gandikota, Yongjing Lin, Karla M Bernal Ramos, Shih Chung Chen
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Publication number: 20220165854Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-K dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAIN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAIC).Type: ApplicationFiled: February 10, 2022Publication date: May 26, 2022Applicant: Applied Materials, Inc.Inventors: Yongjing Lin, Karla M. Bernal Ramos, Shih Chung Chen, Yixiong Yang, Lin Dong, Steven C.H. Hung, Srinivas Gandikota
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Publication number: 20220115516Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-? dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).Type: ApplicationFiled: December 21, 2021Publication date: April 14, 2022Applicant: Applied Materials, Inc.Inventors: Yongjing Lin, Karla M. Bernal Ramos, Luping Li, Shih Chung Chen, Jacqueline S. Wrench, Yixiong Yang, Steven C.H. Hung, Srinivas Gandikota, Naomi Yoshida, Lin Dong
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Publication number: 20220098731Abstract: Methods of forming electronic devices comprising tungsten film stacks are provided. Methods include forming a tungsten nucleation layer on the barrier layer using an atomic layer deposition (ALD) process including a tungsten precursor that is free of fluorine. Forming the nucleation layer comprises controlling process parameters and/or forming WSi pre-nucleation layer.Type: ApplicationFiled: September 29, 2020Publication date: March 31, 2022Applicant: Applied Materials, Inc.Inventors: Kedi Wu, Chenfei Shen, Chi-Chou Lin, Ilanit Fisher, Shih Chung Chen, Mandyam Sriram, Srinivas Gandikota
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Patent number: 11289579Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-? dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).Type: GrantFiled: September 28, 2020Date of Patent: March 29, 2022Assignee: Applied Materials, Inc.Inventors: Yongjing Lin, Karla M Bernal Ramos, Shih Chung Chen, Yixiong Yang, Lin Dong, Steven C. H. Hung, Srinivas Gandikota
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Patent number: 11245022Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-? dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).Type: GrantFiled: May 18, 2020Date of Patent: February 8, 2022Assignee: Applied Materials, Inc.Inventors: Yongjing Lin, Karla M. Bernal Ramos, Luping Li, Shih Chung Chen, Jacqueline S. Wrench, Yixiong Yang, Steven C. H. Hung, Srinivas Gandikota, Naomi Yoshida, Lin Dong
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Publication number: 20210384036Abstract: Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a tungsten-containing film that is substrate free of tungsten metal. The tungsten-containing film is then converted to a metallic tungsten film by exposure to a second process condition.Type: ApplicationFiled: June 4, 2021Publication date: December 9, 2021Applicant: Applied Materials, Inc.Inventors: Ilanit Fisher, Chi-Chou Lin, Kedi Wu, Wen Ting Chen, Shih Chung Chen, Srinivas Gandikota, Mandyam Sriram, Chenfei Shen, Naomi Yoshida, He Ren
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Publication number: 20210384035Abstract: Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a fluorine-free metallic tungsten film. The fluorine-free metallic tungsten film is exposed to a second process condition to deposit a tungsten film on the fluorine-free metallic tungsten film.Type: ApplicationFiled: April 8, 2021Publication date: December 9, 2021Applicant: Applied Materials, Inc.Inventors: Ilanit Fisher, Shih Chung Chen, Kedi Wu, Ashley Lin, Chi-Chou Lin, Yi Xu, Yu Lei, Mandyam Sriram, Wen Ting Chen, Srinivas Gandikota, Chenfei Shen, Naomi Yoshida, He Ren
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Patent number: 11171047Abstract: Methods of forming semiconductor device with fluorine-incorporated metal nitride films are described. A substrate surface is exposed to a metal fluoride precursor to form a metal-fluorine species on the substrate surface. The substrate surface is exposed to a nitriding agent to react with the metal-fluorine species to form a fluorine-incorporated metal nitride film.Type: GrantFiled: June 28, 2020Date of Patent: November 9, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Yixiong Yang, Srinivas Gandikota, Steven C. H. Hung, Jacqueline S. Wrench, Yongjing Lin, Susmit Singha Roy, Wei V. Tang, Shih Chung Chen
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Publication number: 20210288086Abstract: Methods and apparatus for forming reflector films are described A liner is formed on a substrate surface followed by formation of the reflector layer so that there is no oxygen exposure between liner and reflector layer formation. In some embodiments, a high aspect ratio structure is filled with a reflector material by partially filling the structure with the reflector material while growth is inhibited at a top portion of the structure, reactivating the top portion of the substrate and then filling the structure with the reflector material.Type: ApplicationFiled: March 13, 2020Publication date: September 16, 2021Applicant: Applied Materials, Inc.Inventors: Luping Li, Jacqueline S. Wrench, Wen Ting Chen, Yixiong Yang, In Seok Hwang, Shih Chung Chen, Srinivas Gandikota
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Publication number: 20210268624Abstract: In an embodiment, a chemical mechanical planarization (CMP) system includes: a monolithic platen within a platen housing, wherein the monolithic platen is formed of a single piece of material, wherein the monolithic platen includes: a first portion within a first opening, and a second portion within a second opening, wherein the first portion has a different diameter than the second portion; and a polishing fluid delivery module above the monolithic platen, wherein the polishing fluid delivery module is configured to deliver slurry to the monolithic platen during performance of CMP.Type: ApplicationFiled: May 12, 2021Publication date: September 2, 2021Inventors: Tsung-Lung Lia, Cheng-Ping Chen, Shih-Chung Chen, Sheng-Tai Peng
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Patent number: 11075276Abstract: Methods and apparatus for forming a semiconductor structure such as an NMOS gate electrode are described. Methods may include depositing a first capping layer having a first surface atop a first surface of a high-k dielectric layer; and depositing at least one metal layer having a first surface atop the first surface of the first capping layer, wherein the at least one metal layer includes titanium aluminum silicide material. Some methods include removing an oxide layer from the first surface of the first capping layer by contacting the first capping layer with metal chloride in an amount sufficient to remove an oxide layer. Some methods for depositing a titanium aluminum silicide material are performed by an atomic layer deposition process performed at a temperature of 350 to 400 degrees Celsius.Type: GrantFiled: October 7, 2019Date of Patent: July 27, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Yongjing Lin, Shih Chung Chen, Naomi Yoshida, Lin Dong, Liqi Wu, Rongjun Wang, Steven Hung, Karla Bernal Ramos, Yixiong Yang, Wei Tang, Sang-Ho Yu
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Patent number: 11062900Abstract: Methods and apparatus for forming a semiconductor structure with a scaled effective oxide thickness is disclosed. In embodiments, a method includes depositing amorphous silicon capping layer having a first surface atop a first surface of a titanium nitride (TiN) layer, wherein the titanium nitride layer is atop a first surface of a high-k dielectric layer disposed within a film stack; contacting the first surface of the amorphous silicon capping layer with a nitrogen containing gas; and annealing the film stack.Type: GrantFiled: December 1, 2019Date of Patent: July 13, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Luping Li, Shih Chung Chen, Kazuya Daito, Lin Dong, Zhebo Chen, Yixiong Yang, Steven Hung
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Patent number: 11020837Abstract: In an embodiment, a chemical mechanical planarization (CMP) system includes: a monolithic platen within a platen housing, wherein the monolithic platen is formed of a single piece of material, wherein the monolithic platen includes: a first portion within a first opening, and a second portion within a second opening, wherein the first portion has a different diameter than the second portion; and a polishing fluid delivery module above the monolithic platen, wherein the polishing fluid delivery module is configured to deliver slurry to the monolithic platen during performance of CMP.Type: GrantFiled: April 27, 2018Date of Patent: June 1, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tsung-Lung Lai, Cheng-Ping Chen, Shih-Chung Chen, Sheng-Tai Peng