Abstract: Methods and apparatus for forming a semiconductor structure, including depositing a doping stack having a first surface atop a high-k dielectric layer, wherein the doping stack includes at least one first metal layer having a first surface, at least one second metal layer comprising a first aluminum dopant and a first surface, wherein the second metal layer is atop the first surface of the first metal layer, and at least one third metal layer atop the first surface of the second metal layer; depositing an anneal layer atop the first surface of the doping stack; annealing the structure to diffuse at least the first aluminum dopant into the high-k dielectric layer; removing the anneal layer; and depositing at least one work function layer atop the first surface of the doping stack.

Abstract: Film stacks and methods of forming film stacks including a high-k dielectric layer on a substrate, a high-k capping layer on the high-k dielectric layer, an n-metal layer on the high-k capping layer and an n-metal capping layer on the n-metal layer. The n-metal layer having an aluminum rich interface adjacent the high-k capping layer.

Abstract: Processing methods comprising oxidizing a metal nitride film to form a metal oxynitride layer and etching the metal oxynitride layer with a metal halide etchant. The metal halide etchant can be, for example, WCl5, WOCl4 or TaCl5. Methods of filling a trench with a seam-free gapfill are also described. A metal nitride film is deposited in the trench to form a seam and pinch-off an opening of the trench. The pinched-off opening is subjected to a directional oxidizing plasma and a metal halide etchant to open the pinched-off top and allow access to the seam.

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a process chamber includes: a chamber body and a lid assembly defining a processing volume within the process chamber; a substrate support disposed within the processing volume to support a substrate; and a showerhead having a first surface including a plurality of gas distribution holes disposed opposite and parallel to the substrate support, wherein the showerhead is fabricated from aluminum and includes an aluminum oxide coating along the first surface, wherein the aluminum oxide coating has a thickness of about 0.0001 to about 0.002 inches. In some embodiments, the showerhead may further have at least one of a roughness of about 10 to about 300 ?-in Ra, or an emissivity (?) of about 0.20 to about 0.80. The process chamber may be a thermal atomic layer deposition (ALD) chamber.

Abstract: Semiconductor devices incorporating multi-threshold voltage structures and methods of forming such semiconductor devices are provided herein. In some embodiments of the present disclosure, a semiconductor device having a multi-threshold voltage structure includes: a substrate; a gate dielectric layer atop the substrate, wherein the gate dielectric layer comprises an interface layer and a high-k dielectric layer atop the interface layer; a lanthanum nitride layer deposited atop the high-k dielectric layer; an interface of the interface layer and the high-k dielectric layer comprising lanthanum species from the lanthanum nitride layer; and a gate electrode layer atop the lanthanum nitride layer.

Abstract: Semiconductor devices incorporating multi-threshold voltage structures and methods of forming such semiconductor devices are provided herein. In some embodiments of the present disclosure, a semiconductor device having a multi-threshold voltage structure includes: a substrate; a gate dielectric layer atop the substrate, wherein the gate dielectric layer comprises an interface layer and a high-k dielectric layer atop the interface layer; a lanthanum nitride layer deposited atop the high-k dielectric layer; an interface of the interface layer and the high-k dielectric layer comprising lanthanum species from the lanthanum nitride layer; and a gate electrode layer atop the lanthanum nitride layer.

Abstract: Films comprising Aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and the film has less than about 50% carbon. Methods of forming the films comprise exposing a substrate to a metal halide precursor, purging the metal halide precursor from the processing chamber and then exposing the substrate to an alkyl aluminum precursor and an alane precursor, either sequentially or simultaneously. The alane precrursor comprises an amine-alane and a stabilizing amine selected from one or more of diemthylcyclohexylamine or dicyclomethylhexylamine.

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a process chamber includes: a chamber body and a lid assembly defining a processing volume within the process chamber; a substrate support disposed within the processing volume to support a substrate; and a showerhead having a first surface including a plurality of gas distribution holes disposed opposite and parallel to the substrate support, wherein the showerhead is fabricated from aluminum and includes an aluminum oxide coating along the first surface, wherein the aluminum oxide coating has a thickness of about 0.0001 to about 0.002 inches. In some embodiments, the showerhead may further have at least one of a roughness of about 10 to about 300?-in Ra, or an emissivity (?) of about 0.20 to about 0.80. The process chamber may be a thermal atomic layer deposition (ALD) chamber.

Abstract: A wireless charging device of the disclosure is used for carrying out wireless battery charging for an electronic device. The wireless charging device includes a wireless charger, a positioning seat, and an adjusting seat. The positioning seat is fixed with the wireless charger. The positioning seat and the wireless charger collectively form a sliding space. The adjusting seat supports the electronic device. The adjusting seat extends into the sliding space and slides along the sliding space relatively to the positioning seat, to adjust a location of a transmitter coil center of the wireless charger, which results that the transmitter coil center of the transmitter of the wireless charger aligns to a receptor coil center of the electronic device.

Abstract: Provided are methods of depositing N-Metals onto a substrate. Methods include first depositing an initiation layer. The initiation layer may comprise or consist of cobalt, tantalum, nickel, titanium or TaAlC. These initiation layers can be used to deposit TaCx.

Abstract: A power charging socket according to an exemplary embodiment of the disclosure is inlaid in a supporting body. The power charging socket includes a power socket module and a panel. The power socket module includes a power port exposed out of the panel. The power charging socket further includes a USB charging module and a baffle plate. The USB charging module includes a charging port exposed out of the panel. A wireless charging transmitter is located inside the baffle plate. One end of the baffle plate is rotatably connected with a bottom of the panel, and another end of the baffle plate is detachably connected with the panel. The baffle plate closes the panel to cover the power port and the charging port.

Abstract: Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl4, TaCl5 and HfCl4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)3-aAlHa]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.

Abstract: A wireless charging device of the disclosure is used for carrying out wireless battery charging for an electronic device. The wireless charging device includes a wireless charger, a positioning seat, and an adjusting seat. The positioning seat is fixed with the wireless charger. The positioning seat and the wireless charger collectively form a sliding space. The adjusting seat supports the electronic device. The adjusting seat extends into the sliding space and slides along the sliding space relatively to the positioning seat, to adjust a location of a transmitter coil center of the wireless charger, which results that the transmitter coil center of the transmitter of the wireless charger aligns to a receptor coil center of the electronic device.

Abstract: A method for BCI control is utilized to control a plurality of brain control devices. The brain control devices are capable of executing an operation themselves. A brain-wave control platform is provided for supplying a first signal and a second signal, wherein the first and second signals are utilized to visually evoke a user's first and second brain waves, respectively. The brain-wave control platform selects one of the brain control devices as a to-be-controlled device by the first brain wave, and the to-be-controlled device is controlled to finish an operation by the second brain wave.

Abstract: A power charging socket according to an exemplary embodiment of the disclosure is inlaid in a supporting body. The power charging socket includes a power socket module and a panel. The power socket module includes a power port exposed out of the panel. The power charging socket further includes a USB charging module and a baffle plate. The USB charging module includes a charging port exposed out of the panel. A wireless charging transmitter is located inside the baffle plate. One end of the baffle plate is rotatably connected with a bottom of the panel, and another end of the baffle plate is detachably connected with the panel. The baffle plate closes the panel to cover the power port and the charging port.

Abstract: The present invention discloses an automatic alignment system. The automatic alignment system includes a stage, a movable platform, an image recognition unit and a processing unit. The stage is used to be placed on an object under test. The movable platform is disposed above the stage. The image recognition unit disposed on the movable platform captures a plurality of edge images of the object under test by way of the movable platform moving along the edge of the object under test. The processing unit receives and analyzes each of the edge images from the image recognition unit. The processing unit determines whether each of the edge images is a corner image of the object under test or not and estimates the position of the corner of the object under test corresponding to the stage when the edge image is determined to be the corner image.

Abstract: Provided are methods for making metal gates suitable for FinFET structures. The methods described herein generally involve forming a high-k dielectric material on a semiconductor substrate; depositing a high-k dielectric cap layer over the high-k dielectric material; depositing a PMOS work function layer having a positive work function value; depositing an NMOS work function layer; depositing an NMOS work function cap layer over the NMOS work function layer; removing at least a portion of the PMOS work function layer or at least a portion of the NMOS work function layer; and depositing a fill layer. Depositing a high-k dielectric cap layer, depositing a PMOS work function layer or depositing a NMOS work function cap layer may comprise atomic layer deposition of TiN, TiSiN, or TiAlN. Either PMOS or NMOS may be deposited first.

Abstract: Provided are methods of depositing N-Metals onto a substrate. Some methods comprise providing an initiation layer of TaM or TiM layer on a substrate, wherein M is selected from aluminum, carbon, noble metals, gallium, silicon, germanium and combinations thereof; and exposing the substrate having the TaM or TiM layer to a treatment process comprising soaking the surface of the substrate with a reducing agent to provided a treated initiation layer.

Abstract: In a non-invasive human metabolic condition measuring apparatus and method, a micro-light source emits an incident light having a wavelength from 329 nm to 473 nm to trigger a mitochondrial metabolite of a human mucosa tissue, and the metabolite is excited to generate a fluorescent signal having a wavelength from 405 nm to 572 nm, and the fluorescent signal is filtered by an optical filter, received by a micro receiver, and amplified by an amplification circuit sequentially, and then a filter circuit and an analog/digital conversion circuit of a microprocessing unit are provided for filtering and performing an analog/digital signal conversion respectively, so that the metabolite content can be calculated by the computation to provide human metabolic conditions, and a combination of micro components and circuits is used for miniaturizing the apparatus to provide a convenient carry of the apparatus.

Abstract: The invention discloses a one-to-multipoint wireless powering method, wherein by using the radiating of magnetic line of force from the high frequency alternating magnetic field in a fixed area; by using the coils that composed of the loop to cut the high frequency magnetic line of force, and powering the electrical equipments after rectifying and filtering the alternating current that generated by the coils cutting; it is realized by the composing of a high frequency alternating magnetic field radiating element and magnetic cutting receiving element, while the high frequency alternating magnetic field radiates the magnetic line of force in a fixed area, and the magnetic cutting receiving element generates the alternating current by cutting the magnetic line of force and powers the electrical equipments after the rectifying and filtering of the alternating current.