Abstract: Provided are films comprising aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and less than about 50% carbon. Also provided are methods of depositing the same.

Abstract: Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl4, TaCl5 and HfCl4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)3-aAlHa]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.

Abstract: Provided are methods of providing aluminum-doped TaSix films. Doping TaSix films allows for the tuning of the work function value to make the TaSix film better suited as an N-metal for NMOS applications. One such method relates to soaking a TaSix film with an aluminum-containing compound. Another method relates to depositing a TaSix film, soaking with an aluminum-containing compound, and repeating for a thicker film. A third method relates to depositing an aluminum-doped TaSix film using tantalum, aluminum and silicon precursors.

Abstract: Provided are methods for making metal gates suitable for FinFET structures. The methods described herein generally involve forming a high-k dielectric material on a semiconductor substrate; depositing a high-k dielectric cap layer over the high-k dielectric material; depositing a PMOS work function layer having a positive work function value; depositing an NMOS work function layer; depositing an NMOS work function cap layer over the NMOS work function layer; removing at least a portion of the PMOS work function layer or at least a portion of the NMOS work function layer; and depositing a fill layer. Depositing a high-k dielectric cap layer, depositing a PMOS work function layer or depositing a NMOS work function cap layer may comprise atomic layer deposition of TiN, TiSiN, or TiAlN. Either PMOS or NMOS may be deposited first.

Abstract: Provided are methods of providing aluminum-doped TaSix films. Doping TaSix films allows for the tuning of the work function value to make the TaSix film better suited as an N-metal for NMOS applications. One such method relates to soaking a TaSix film with an aluminum-containing compound. Another method relates to depositing a TaSix film, soaking with an aluminum-containing compound, and repeating for a thicker film. A third method relates to depositing an aluminum-doped TaSix film using tantalum, aluminum and silicon precursors.

Abstract: Provided are methods of depositing N-Metals onto a substrate. Some methods comprise providing an initiation layer of TaM or TiM layer on a substrate, wherein M is selected from aluminum, carbon, noble metals, gallium, silicon, germanium and combinations thereof; and exposing the substrate having the TaM or TiM layer to a treatment process comprising soaking the surface of the substrate with a reducing agent to provided a treated initiation layer.

Abstract: Provided are methods of depositing N-Metals onto a substrate. Methods include first depositing an initiation layer. The initiation layer may comprise or consist of cobalt, tantalum, nickel, titanium or TaAlC. These initiation layers can be used to deposit TaCx.

Abstract: A method for BCI control is utilized to control a plurality of brain control devices. The brain control devices are capable of executing an operation themselves. A brain-wave control platform is provided for supplying a first signal and a second signal, wherein the first and second signals are utilized to visually evoke a user's first and second brain waves, respectively. The brain-wave control platform selects one of the brain control devices as a to-be-controlled device by the first brain wave, and the to-be-controlled device is controlled to finish an operation by the second brain wave.

Abstract: In a non-invasive human metabolic condition measuring apparatus and method, a micro-light source emits an incident light having a wavelength from 329 nm to 473 nm to trigger a mitochondrial metabolite of a human mucosa tissue, and the metabolite is excited to generate a fluorescent signal having a wavelength from 405 nm to 572 nm, and the fluorescent signal is filtered by an optical filter, received by a micro receiver, and amplified by an amplification circuit sequentially, and then a filter circuit and an analog/digital conversion circuit of a microprocessing unit are provided for filtering and performing an analog/digital signal conversion respectively, so that the metabolite content can be calculated by the computation to provide human metabolic conditions, and a combination of micro components and circuits is used for miniaturizing the apparatus to provide a convenient carry of the apparatus.

Abstract: The invention discloses a one-to-multipoint wireless powering method, wherein by using the radiating of magnetic line of force from the high frequency alternating magnetic field in a fixed area; by using the coils that composed of the loop to cut the high frequency magnetic line of force, and powering the electrical equipments after rectifying and filtering the alternating current that generated by the coils cutting; it is realized by the composing of a high frequency alternating magnetic field radiating element and magnetic cutting receiving element, while the high frequency alternating magnetic field radiates the magnetic line of force in a fixed area, and the magnetic cutting receiving element generates the alternating current by cutting the magnetic line of force and powers the electrical equipments after the rectifying and filtering of the alternating current.

Abstract: A hydrogen generator essentially composed of a first medium is provided, comprising: a reforming zone, a preheating zone and a heat source. The reforming zone is used for containing a reforming catalyst so as to perform a steam reforming reaction of a hydrogen-producing raw material to generate hydrogen; and the heat source provides heat to the preheating zone and reforming zone, so that the hydrogen-producing raw material is firstly preheated in the preheating zone and then performs the steam reforming reaction in the reforming zone. The reforming zone and preheating zone are divided with a shortest interval of at least about 0.5 mm with the first medium, wherein the first medium has a thermal conductivity (K) of at least about 60 W/m-K.

Abstract: A porous catalyst structure with a high specific surface area comprising a porous substrate with a catalyst layer thereon is provided. The porous catalyst structure can be prepared by a process comprising depositing a metallic layer onto the surface of a porous, metallic substrate by electroplating, and optionally oxidizing the metallic layer into the metal oxide layer. Any conductive porous metallic substrate can be used as the substrate of the subject invention, and the metallic layer may comprise any suitable metal(s) and/or metal oxide(s) with desired catalytic function(s).

Abstract: This invention relates to a nondirectional radio frequency (RF) rechargeable dry cell, including a dry cell case, an accumulator that installed inside the dry cell case, and a nondirectional radio frequency charge unit. The nondirectional radio frequency charge unit includes a nondirectional induction coil and charging control circuit, wherein the nondirectional induction coil connects with the accumulator by the charging control circuit. The nondirectional radio frequency rechargeable dry cell of this invention is able to carry on wireless charging for the dry cell by the induction of the high-frequency impulse magnetic field and converting into electrical energy, which is efficient and far ranged. When the electric appliance using the nondirectional radio frequency rechargeable dry cell of this invention, the wireless charging is realized without the removal of the batteries from the electric appliance, and is flexible and convenient.

Abstract: A porous catalyst structure with a high specific surface area comprising a porous substrate with a catalyst layer thereon is provided. The porous catalyst structure can be prepared by a process comprising depositing a metallic layer onto the surface of a porous, metallic substrate by electroplating, and optionally oxidizing the metallic layer into the metal oxide layer. Any conductive porous metallic substrate can be used as the substrate of the subject invention, and the metallic layer may comprise any suitable metal(s) and/or metal oxide(s) with desired catalytic function(s).

Abstract: A palladium-containing electroplating solution and method for providing a palladium or palladium alloy membrane on a porous metal support are provided. The subject invention uses electroplating to manufacture a palladium or palladium alloy membrane on a porous metal with a decreased preparation time and simplified preparation procedure. Moreover, the palladium or palladium alloy membrane prepared by the subject invention exhibits excellent compactness and good resistance to the hydrogen embrittlement, as well as a high applicability.

Abstract: The present invention provides an antenna structure for input and output signals, which includes multiple antenna units and a carrier. The carrier has a first and second bearing surface, the first bearing surface of the carrier having multiple antenna units placed on it separately, so that the loading structure of the antenna units goes through the first bearing surface to the second bearing surface. A boring hole is placed on the carrier, and the boring hole is used to secure the carrier with antenna units on a object. Through this invention, the antenna uses the carrier to integrate the module and makes the antenna structure for multiple input and output signals.

Abstract: An apparatus and method for protecting die corners in a semiconductor integrated circuit. At least one irregular seal ring having two sides can be configured, wherein the irregular seal ring is located at a corner of a die utilized in fabricating a semiconductor integrated circuit. A dummy configuration for stress relief can then be arranged, wherein the dummy configuration is located at the two sides of the at least one irregular seal ring, thereby protecting the corner of the die against thermal stress and the semiconductor integrated circuit against moisture and metallic impurities. The irregular seal ring can be configured to generally comprise a non-rectangular seal ring. The irregular seal preferably comprises an octangular seal ring.

Abstract: A process for finishing an end surface of a non-circular post is provided to obtain a good surface precision. The process includes the steps of providing a workpiece having a first end with a first end surface, mounting a filling block around the first end of the workpiece, and surface-finishing the first end surface of the workpiece and an extension end surface of the filling block, which are at least covered by an area bounded by a circular track, by using a cutter.

Abstract: A pressure-controlling device is used in an injection mold that includes a movable component, a stationary component, and a cavity defined by the movable and stationary components. The pressure-controlling device includes a piezoelectric actuator, a pressure sensor, and a control unit. The piezoelectric actuator is connected to the movable component for actuating the movable component. The pressure sensor is connected to the stationary component, and outputs a signal in response to pressure in the cavity. The control unit is connected electrically to the piezoelectric actuator and the pressure sensor, processes the signal from the pressure sensor, and controls the piezoelectric actuator to move the movable component and to adjust the pressure in the cavity.

Abstract: A process for finishing an end surface of a non-circular post is provided to obtain a good surface precision. The process includes the steps of providing a workpiece having a first end with a first end surface, mounting a filling block around the first end of the workpiece, and surface-finishing the first end surface of the workpiece and an extension end surface of the filling block, which are at least covered by an area bounded by a circular track, by using a cutter.