Abstract: A step-flow growth of a group-III nitride single crystal on a silicon single crystal substrate is promoted. A layer of oxide oriented to a <111> axis of silicon single crystal is formed on a surface of a silicon single crystal substrate, and group-III nitride single crystal is crystallized on a surface of the layer of oxide. Thereupon, a <0001> axis of the group-III nitride single crystal undergoing crystal growth is oriented to a c-axis of the oxide. When the silicon single crystal substrate is provided with a miscut angle, step-flow growth of the group-III nitride single crystal occurs. By deoxidizing a silicon oxide layer formed at an interface of the silicon single crystal and the oxide, orientation of the oxide is improved.

Abstract: A semiconductor device includes a GaN device provided with: a substrate made of a semi-insulating material or a semiconductor; a channel-forming layer including a GaN layer arranged on the substrate; a gate structure in which a gate-insulating film in contact with the GaN layer is arranged on the channel-forming layer, the gate structure having a gate electrode arranged across the gate-insulating film; and a source electrode and a drain electrode that are arranged on the channel-forming layer and on opposite sides interposing the gate structure. The donor element concentration at the interface between the gate-insulating film and the GaN layer and at the lattice position on the GaN layer side with respect to the interface is set to be less than or equal to 5.0×1017 cm?3.

Abstract: Disclosed is a formed article comprising a layer obtained by implanting ions of a hydrocarbon compound into a polyorganosiloxane compound-containing layer. Also disclosed are: a method of producing the formed article, the method comprising implanting ions of a hydrocarbon compound into a surface of a polyorganosiloxane compound-containing layer of a formed body that includes the polyorganosiloxane compound-containing layer in its surface; an electronic device member that includes the formed article; and an electronic device that includes the electronic device member. The present invention provides; a formed article which exhibits an excellent gas barrier capability, transparency, bendability, antistatic performance, and surface flatness; a method of producing the formed article, an electronic device member, and an electronic device.

Abstract: A semiconductor device includes a switching device having: a substrate configured by a semi-insulating material or a semiconductor; a channel forming layer on the substrate that is configured by a compound semiconductor mainly having a group III nitride; a gate structure configured by a gate electrode on the channel forming layer with a gate insulating film interposed therebetween; and a source electrode and a drain electrode on the channel forming layer at both sides of the gate structure respectively, a collapse inhibiting layer on the channel forming layer in an element region of the channel forming layer where the switching device is arranged that is configured by an insulating material; and a leakage inhibiting layer on the channel forming layer in an element isolation region of the channel forming layer surrounding the element region that is configured by an insulating material different from that of the collapse inhibiting layer.

Abstract: A formed article comprising a gas barrier layer that is formed of a material including at least an oxygen atom, a carbon atom, and a silicon atom, the gas barrier layer including an area (A) where an oxygen atom content rate gradually decreases, and a carbon atom content rate gradually increases in a depth direction from a surface, the area (A) including a partial area (A1) and a partial area (A2), the (A1) having a specific oxygen, carbon and silicon content, and the (A2) having a specific oxygen, carbon and silicon content; a method of producing the same; an electronic device member; an electronic device. The formed article exhibits an excellent gas barrier capability, excellent bendability, excellent adhesion, and excellent surface flatness.

Abstract: A formed article includes a gas barrier layer that is formed of a material that includes at least an oxygen atom, a carbon atom, and a silicon atom, the gas barrier layer having an oxygen atom content that gradually decreases from the surface of the gas barrier layer in the depth direction, and having a carbon atom content that gradually increases from the surface of the gas barrier layer in the depth direction. An electronic device member includes the formed article, and an electronic device includes the electronic device member. The formed article exhibits an excellent gas barrier capability and excellent transparency.

Abstract: A manufacturing method of a semiconductor device including arranging a compound semiconductor above a stage of a chamber, supplying an etching gas into the chamber, and generating a plasma in the chamber is provided. The compound semiconductor includes a group-III element nitride as a main component. A surface of the compound semiconductor is processed by a dry etching. Light is irradiated into the chamber during the generating of the plasma. A dry etching apparatus including a chamber including a stage, on which a compound semiconductor is mounted, and a light source irradiating light into the chamber is provided. The chamber is supplied with an etching gas. A plasma is generated in the chamber. A surface of the compound semiconductor is an object of a dry etching.

Abstract: A step-flow growth of a group-III nitride single crystal on a silicon single crystal substrate is promoted. A layer of oxide oriented to a <111> axis of silicon single crystal is formed on a surface of a silicon single crystal substrate, and group-III nitride single crystal is crystallized on a surface of the layer of oxide. Thereupon, a <0001> axis of the group-III nitride single crystal undergoing crystal growth is oriented to a c-axis of the oxide. When the silicon single crystal substrate is provided with a miscut angle, step-flow growth of the group-III nitride single crystal occurs. By deoxidizing a silicon oxide layer formed at an interface of the silicon single crystal and the oxide, orientation of the oxide is improved.

Abstract: A formed article includes a gas barrier layer that is formed of a material including at least an oxygen atom and a silicon atom, a surface area of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on the total content of oxygen atoms, nitrogen atoms, and silicon atoms, and having a film density of 2.4 to 4.0 g/cm3. A method of producing a formed article includes implanting ions into a surface layer part of a polysilazane compound-containing layer of a formed body that includes the polysilazane compound-containing layer in its surface layer part. An electronic device member includes the formed article. An electronic device includes the electronic device member. The formed article exhibits an excellent gas barrier capability, excellent folding resistance, and excellent transparency.

Abstract: The present invention provides a luminescent composition which is capable of providing an inorganic electroluminescent sheet with a high productivity at low costs in an efficient manner, and has a desired light transmittance (transparency) when no electric voltage is applied thereto, an inorganic electroluminescent sheet obtained from the luminescent composition which can be mass-produced, and a process for producing the inorganic electroluminescent sheet. The present invention relates to a luminescent composition including an inorganic electroluminescent substance and a binder resin, wherein a content of the inorganic electroluminescent substance is not less than 0.

Abstract: Disclosed is a formed article comprising an ion-implanted layer obtained by implanting ions of a silicon compound into a polymer layer. Also disclosed are: a method of producing the formed article, the method comprising implanting ions of a silicon compound into a surface of a polymer layer of a formed body that includes the polymer layer in its surface; an electronic device member comprising the formed article; an electronic device comprising the electronic device member. Consequently, the present invention provides: a formed article which has excellent gas barrier capability, bendability and surface flatness; a method of producing the formed article, an electronic device member comprising the formed article; an electronic device comprising the electronic device member.

Abstract: A manufacturing method of a semiconductor device including arranging a compound semiconductor above a stage of a chamber, supplying an etching gas into the chamber, and generating a plasma in the chamber is provided. The compound semiconductor includes a group-III element nitride as a main component. A surface of the compound semiconductor is processed by a dry etching. Light is irradiated into the chamber during the generating of the plasma. A dry etching apparatus including a chamber including a stage, on which a compound semiconductor is mounted, and a light source irradiating light into the chamber is provided. The chamber is supplied with an etching gas. A plasma is generated in the chamber. A surface of the compound semiconductor is an object of a dry etching.

Abstract: A semiconductor device includes a HEMT and a diode. The HEMT includes: a substrate having a GaN layer as a channel layer generating a two-dimensional electron gas and an AlGaN layer as a barrier layer on the GaN layer; a source electrode on the AlGaN layer ohmic contacting the AlGaN layer; a drain electrode on the AlGaN layer apart from the source electrode and ohmic contacting the AlGaN layer; an inter-layer insulating film on the AlGaN layer between the source electrode and the drain electrode; and a gate electrode on the inter-layer insulating film. The substrate includes an active layer region generating the two dimensional electron gas in the GaN layer. The diode includes an anode electrically connected to the gate electrode and a cathode electrically connected to the drain electrode.

Abstract: A luminescent composition can efficiently provide an inorganic electroluminescent sheet with a high productivity at low costs. The composition has a desired light transmittance (transparency) when no electric voltage is applied to it. The composition includes an inorganic electroluminescent substance and a binder resin. A content of the inorganic electroluminescent substance is at least 0.5 part and less than 100 parts by mass on the basis of 100 parts by mass of the binder resin. The inorganic electroluminescent sheet includes a first transparent substrate; a first transparent electrode; the inorganic electroluminescent layer of the luminescent composition; a first transparent electrode; and a second transparent substrate, successively laminated in this order. The inorganic electroluminescent sheet has a light transmittance of 60% or more, measured at a wavelength of 550 nm under a non-light emitting condition.

Abstract: The claimed invention relates to a luminescent decorative material, which is visible even at night, of which different decorative properties are obtained in the daytime or under lighting due to the presence or absence of luminescence. The claimed invention provide a luminescent sheet (plane sheet) having see-through property and containing a transparent part, through which it is possible to see the area behind the plane sheet, and a luminescent part.

Abstract: The present invention provides a luminescent composition capable of providing an electroluminescent sheet with a high productivity at low costs in an efficient manner, an electroluminescent sheet obtained from the luminescent composition which can be mass-produced, and a process for producing the electroluminescent sheet. The present invention relates to a luminescent composition having a pressure sensitive adhesive property and produced by kneading and dispersing an electroluminescent substance in a resin having a glass transition temperature of from ?70 to 5° C.

Abstract: A film for producing a sheet for a multilayer optical recording medium, the sheet having a repeating structure containing a plurality of laminated optical recording layers, the sheet has a structure including a unit wherein an optical recording layer and an adhesive layer are laminated or a structure including a unit wherein an optical recording layer, a barrier layer and an adhesive layer are laminated, and a maximum height roughness of the optical recording layer or the barrier layer is 500 nm or smaller, the optical recording layer or the barrier layer is disposed on a process film on a face at a side for forming the optical recording layer or at a side for forming the barrier layer, the face at the side for forming the optical recording layer or at the side for forming the barrier layer having a maximum height roughness of 500 nm or smaller.

Abstract: Disclosed is a sheet for producing a multilayer optical recording medium having a repeating structure wherein a plurality of optical recording layers are laminated. The sheet for a multilayer optical recording medium has a structure having a unit wherein an optical recording layer and an adhesive layer are laminated, or a structure having a unit wherein an optical recording layer, a barrier layer and an adhesive layer are laminated in this order. The maximum height roughness (Rz) of the optical recording layer or the barrier layer is not more than 500 nm. A multilayer optical recording medium is produced by using the sheet for a multilayer optical recording medium. Also disclosed is a sheet for producing, with high precision, a high-quality multilayer optical recording medium having a repeating unit wherein a plurality of optical recording layers containing a multiphoton absorbing material are laminated. A multilayer optical recording medium is also produced by using this sheet.

Abstract: A luminescent composition can efficiently provide an inorganic electroluminescent sheet with a high productivity at low costs. The composition has a desired light transmittance (transparency) when no electric voltage is applied to it. The composition includes an inorganic electroluminescent substance and a binder resin. A content of the inorganic electroluminescent substance is at least 0.5 part and less than 100 parts by mass on the basis of 100 parts by mass of the binder resin. The inorganic electroluminescent sheet includes a first transparent substrate; a first transparent electrode; the inorganic electroluminescent layer of the luminescent composition; a first transparent electrode; and a second transparent substrate, successively laminated in this order. The inorganic electroluminescent sheet has a light transmittance of 60% or more, measured at a wavelength of 550 nm under a non-light emitting condition.

Abstract: Disclosed is a laminate comprising a gas barrier layer and a conductor layer, the gas barrier layer being formed of a material that includes at least an oxygen atom, a carbon atom, and a silicon atom, the gas barrier layer having an oxygen atom content that gradually decreases from a surface of the gas barrier layer in a depth direction, and having a carbon atom content that gradually increases from the surface of the gas barrier layer in the depth direction. Also disclosed are a method of producing the laminate, an electronic device member that includes the laminate, and an electronic device that includes the electronic device member. The above laminate exhibits an excellent gas harrier capability and excellent interlayer adhesion, and the conductor layer of the above laminate has high surface smoothness. Since the above laminate enables an increase in flexibility and a reduction in weight, the laminate may suitably be used as an electronic device member for a display (e.g.