Abstract: A back protective sheet for a solar cell module in which a thermoplastic resin sheet containing heat-expandable particles is formed on at least one side of a base sheet, a solar cell module having this back protective sheet for a solar cell module, and a production method of this solar cell module.

Abstract: A formed article comprising a layer obtained by implanting ions into a polycarbosilane compound-containing layer, a method of producing the formed article, an electronic device member, and an electronic device comprising the electronic device member. The formed article has an excellent gas barrier capability, excellent transparency, excellent bendability, excellent adhesion, and excellent surface flatness.

Abstract: A formed article comprising a gas barrier layer that is formed of a material including at least an oxygen atom, a carbon atom, and a silicon atom, the gas barrier layer including an area (A) where an oxygen atom content rate gradually decreases, and a carbon atom content rate gradually increases in a depth direction from a surface, the area (A) including a partial area (A1) and a partial area (A2), the (A1) having a specific oxygen, carbon and silicon content, and the (A2) having a specific oxygen, carbon and silicon content; a method of producing the same; an electronic device member; an electronic device. The formed article exhibits an excellent gas barrier capability, excellent bendability, excellent adhesion, and excellent surface flatness.

Abstract: Disclosed is a formed article comprising a layer obtained by implanting ions of a hydrocarbon compound into a polyorganosiloxane compound-containing layer. Also disclosed are: a method of producing the formed article, the method comprising implanting ions of a hydrocarbon compound into a surface of a polyorganosiloxane compound-containing layer of a formed body that includes the polyorganosiloxane compound-containing layer in its surface; an electronic device member that includes the formed article; and an electronic device that includes the electronic device member. The present invention provides; a formed article which exhibits an excellent gas barrier capability, transparency, bendability, antistatic performance, and surface flatness; a method of producing the formed article, an electronic device member, and an electronic device.

Abstract: A formed article includes a gas barrier layer that is formed of a material including at least an oxygen atom and a silicon atom, a surface area of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on the total content of oxygen atoms, nitrogen atoms, and silicon atoms, and having a film density of 2.4 to 4.0 g/cm3. A method of producing a formed article includes implanting ions into a surface layer part of a polysilazane compound-containing layer of a formed body that includes the polysilazane compound-containing layer in its surface layer part. An electronic device member includes the formed article. An electronic device includes the electronic device member. The formed article exhibits an excellent gas barrier capability, excellent folding resistance, and excellent transparency.

Abstract: Disclosed is a formed article comprising an ion-implanted layer obtained by implanting ions of a silicon compound into a polymer layer. Also disclosed are: a method of producing the formed article, the method comprising implanting ions of a silicon compound into a surface of a polymer layer of a formed body that includes the polymer layer in its surface; an electronic device member comprising the formed article; an electronic device comprising the electronic device member. Consequently, the present invention provides: a formed article which has excellent gas barrier capability, bendability and surface flatness; a method of producing the formed article, an electronic device member comprising the formed article; an electronic device comprising the electronic device member.

Abstract: Disclosed is a gas barrier film, which demonstrates superior gas barrier properties and surface smoothness, demonstrates a high degree of adhesion between layers and is resistant to cracking when bent, and an electronic device provided therewith. A gas barrier film of the present invention has a base, and a polyorganosiloxane layer and an inorganic material layer sequentially provided on at least one side of the base, and the inorganic material layer is deposited by dynamic ion mixing method.

Abstract: A laminate comprises a gas barrier layer and an inorganic compound layer, the gas barrier layer being formed of a material that includes at least an oxygen atom, a carbon atom, and a silicon atom, the gas barrier layer having an oxygen atom content rate that gradually decreases from the surface of the gas barrier layer in the depth direction, and having a carbon atom content rate that gradually increases from the surface of the gas barrier layer in the depth direction. An electronic device member includes the laminate, and an electronic device includes the electronic device member. The laminate exhibits an excellent gas barrier capability and excellent transparency, and does not produce cracks (i.e., the gas barrier capability does not deteriorate) even when the laminate is folded. The laminate exhibits an excellent gas barrier capability and an excellent impact-absorbing capability even if an impact is applied from the outside.

Abstract: A formed article includes a gas barrier layer that is formed of a material that includes at least an oxygen atom, a carbon atom, and a silicon atom, the gas barrier layer having an oxygen atom content that gradually decreases from the surface of the gas barrier layer in the depth direction, and having a carbon atom content that gradually increases from the surface of the gas barrier layer in the depth direction. An electronic device member includes the formed article, and an electronic device includes the electronic device member. The formed article exhibits an excellent gas barrier capability and excellent transparency.

Abstract: The present invention provides a luminescent composition capable of providing an electroluminescent sheet with a high productivity at low costs in an efficient manner, an electroluminescent sheet obtained from the luminescent composition which can be mass-produced, and a process for producing the electroluminescent sheet. The present invention relates to an adhesive luminescent composition produced by kneading and dispersing an electroluminescent substance in a resin having a glass transition temperature of from ?70 to 5° C.

Abstract: Disclosed is a sheet for producing a multilayer optical recording medium having a repeating structure wherein a plurality of optical recording layers are laminated. The sheet for a multilayer optical recording medium has a structure having a unit wherein an optical recording layer and an adhesive layer are laminated, or a structure having a unit wherein an optical recording layer, a barrier layer and an adhesive layer are laminated in this order. The maximum height roughness (Rz) of the optical recording layer or the barrier layer is not more than 500 nm. A multilayer optical recording medium is produced by using the sheet for a multilayer optical recording medium. Also disclosed is a sheet for producing, with high precision, a high-quality multilayer optical recording medium having a repeating unit wherein a plurality of optical recording layers containing a multiphoton absorbing material are laminated. A multilayer optical recording medium is also produced by using this sheet.

Abstract: The present invention provides a luminescent composition which is capable of providing an inorganic electroluminescent sheet with a high productivity at low costs in an efficient manner, and has a desired light transmittance (transparency) when no electric voltage is applied thereto, an inorganic electroluminescent sheet obtained from the luminescent composition which can be mass-produced, and a process for producing the inorganic electroluminescent sheet. The present invention relates to a luminescent composition including an inorganic electroluminescent substance and a binder resin, wherein a content of the inorganic electroluminescent substance is not less than 0.

Abstract: There is provided a light emitting diode fabricating method including: a) forming, on a substrate and via a buffer layer, an epitaxial growth layer that includes a light emitting layer, and forming one electrode on a surface of the epitaxial growth layer; b) joining a supporting substrate to the one electrode; c) removing, by etching, the substrate and the buffer layer; and d) forming another electrode at a region, other than a region where output light is taken-out, at a reverse surface opposite the surface of the epitaxial growth layer on which the one electrode is formed.

Abstract: An opening for forming a gate electrode is provided by a first photoresist pattern formed on an insulating film. Reactive ion etching by inductively coupled plasma is applied to the insulating film through the first photoresist pattern as a mask to thereby expose the surface of a GaN semiconductor layer, evaporating thereon a gate metal such as NiAu, thereby forming the gate electrode by self-aligned process. This prevents an oxidized film from being formed on the surface of the semiconductor layer. After the gate electrode is formed, a second photoresist pattern is formed to form a field plate on the gate electrode and the insulating film through the second photoresist pattern as a mask. Thereby, Ti having a high adhesiveness with an insulating film made of SiN or the like can be used as a field plate metal.

Abstract: There is provided a gallium nitride high electron mobility transistor including: a channel layer that lets a carrier travel at high velocity; a carrier supply layer that generates the carrier; and a cap layer, disposed on the carrier supply layer and functioning to prevent oxidation of the carrier supply layer, to reduce gate leakage current, and to increase voltage withstand to gate voltage, wherein a thickness of the cap layer is set at a minimum as thicker than 11 nm.

Abstract: A semiconductor device has source and drain electrodes formed on a substrate, a gate insulation film formed on the substrate between the source and drain electrodes, and a gate electrode formed on the gate insulation film. These elements are all covered by a dielectric sub-insulation film. An opening is formed in the sub-insulation film, partially exposing the gate electrode. A field plate extends from the top of the gate electrode down one side of the gate electrode as far as the sub-insulation film covering the gate insulation film, filling the opening. The thickness of the sub-insulation film can be selected to optimize the separation between the field plate and the substrate for the purpose of reducing current collapse by reducing electric field concentration at the edge of the gate electrode.

Abstract: A coplanar waveguide includes a substrate, a signal line formed on the substrate, a pair of ground conductors formed on the substrate on mutually opposite sides of the signal line, a signal line insulating film disposed between the signal line and the substrate, and a ground conductor insulating film disposed between the pair of ground conductors and the substrate. No corresponding insulating film is present on the substrate between the signal line and the ground conductors. Even if a silicon substrate is used, the attenuation characteristics of the coplanar waveguide are comparable to the attenuation characteristics of coplanar waveguides formed on compound semiconductor substrates.

Abstract: The present invention provides a semiconductor device having a recess-structured ohmic electrode, in which the resistance is small and variation in the resistance value caused by manufacturing irregularities is small. In the semiconductor device of the present invention, a two-dimensional electron gas layer is formed on the interface between a channel-forming layer and a Schottky layer by electrons supplied from the Schottky layer. The ohmic electrode comprises a plurality of side faces in ohmic contact with the two-dimensional electron gas layer. At least a part of side faces of the ohmic electrodes are non-parallel to a channel width direction. In a preferred embodiment of the present invention, the side faces have a saw tooth form or a comb tooth form. Since the contact area between the ohmic electrode and the two-dimensional electron gas layer is increased, ohmic resistance is reduced.

Abstract: The semiconductor device (10) comprises a semiinsulating substrate (12), a layered structure (20) of compound semiconductor which is a mesa structure (18) and contains an active channel layer (14), a first and a second metal main electrodes (22a, 22b) which are provided on the layered structure (20), a first and a second ion implantation regions (40a, 40b) which are provided at the depth level below the active channel layer, and a metal control electrode (26) which is provided along the channel width direction from the first ion implantation region to the second ion implantation region, crossing over the upper side of the active channel layer.

Abstract: The present invention provides a semiconductor device having a recess-structured ohmic electrode, in which the resistance is small and variation in the resistance value caused by manufacturing irregularities is small. In the semiconductor device of the present invention, a two-dimensional electron gas layer is formed on the interface between a channel-forming layer and a Schottky layer by electrons supplied from the Schottky layer. The ohmic electrode comprises a plurality of side faces in ohmic contact with the two-dimensional electron gas layer. At least a part of side faces of the ohmic electrodes are non-parallel to a channel width direction. In a preferred embodiment of the present invention, the side faces have a saw tooth form or a comb tooth form. Since the contact area between the ohmic electrode and the two-dimensional electron gas layer is increased, ohmic resistance is reduced.