Abstract: A technology is provided where a high performance Schottky-barrier diode and other semiconductor elements can be formed in the same chip controlling the increase in the number of steps. After a silicon oxide film is deposited over a substrate where an n-channel type MISFET is formed and the silicon oxide film over a gate electrode and n+ type semiconductor region is selectively removed, a Co film is deposited over the substrate and a CoSi2 layer is formed over the n+ type semiconductor region and the gate electrode by applying a heat treatment to the substrate.

Abstract: A technique that makes it possible to suppress a crystal defect produced in an active area and thereby reduce the fraction defective of semiconductor devices is provided. A first embodiment relates to the planar configuration of SRAM. One of the features of the first embodiment is as illustrated in FIG. 4. That is, on the precondition that the active areas in n-channel MISFET formation regions are all configured in the isolated structure: the width of the terminal sections is made larger than the width of the central parts of the active areas. For example, the terminal sections are formed in an L shape.

Abstract: A technology is provided where a high performance Schottky-barrier diode and other semiconductor elements can be formed in the same chip controlling the increase in the number of steps. After a silicon oxide film is deposited over a substrate where an n-channel type MISFET is formed and the silicon oxide film over a gate electrode and n+ type semiconductor region is selectively removed, a Co film is deposited over the substrate and a CoSi2 layer is formed over the n+ type semiconductor region and the gate electrode by applying a heat treatment to the substrate.

Abstract: A switching control circuit includes a serial-to-parallel converter, a rewritable storage device, and a decoder. The serial-to-parallel converter performs serial-to-parallel conversion for converting an inputted first control signal into a first parallel signal, and outputs the first parallel signal. The rewritable storage device has a write mode and a read mode selectively switched over in response to a storage mode switching signal, stores therein data of the first parallel signal in the write mode, and outputs the stored data as a second parallel signal in the read mode. In the read mode, the decoder decodes the first control signal and the second parallel signal to generate and output a plurality of element control signals to a plurality of elements, respectively. In the write mode, the decoder holds the plurality of element control signals generated in the read mode.

Abstract: A sheet feeding device includes a driven roller that rotates in response to movement of a sheet, and a rotary encoder that detects a moving distance of the sheet based on rotation of the driven roller. The driven roller and the rotary encoder are connected by a gear unit having backlash. When the sheet moves in a reverse direction and thereby the driven roller rotates in reverse, the rotary encoder does not detect the moving distance of the sheet.

Abstract: It is an object of the present invention to obtain an image which is focused on all portions of a sample and to provide a charged particle beam apparatus capable of obtaining a two-dimensional image which has no blurred part over an entire sample. In order to achieve the above object, the present invention comprises means for changing a focus condition of a charged particle beam emitted from a charged particle source, a charged particle detector for detecting charged particles irradiated from a surface portion of said sample in response to the emitted charged particle beam, and means for composing a two-dimensional image of the surface portion of the sample, based on signals on which said charged particle beam is focused, said signals being among signals output from the charged particle detector.

Abstract: An optical amplifying device disposed on a transmission path of a WDM signal includes an optical amplifier amplifying the WDM signal, a detecting unit detecting a change in a transmission wavelength count contained in the WDM signal and/or a change in light receiving level of the optical amplifier, a measuring unit measuring an optical signal to noise (SN) ratio of the WDM signal outputted from the optical amplifier, an update unit updating a reference value for evaluating the measurement value of the optical SN ratio obtained by the measuring unit when the detecting unit detects the change, a judging unit judging whether or not the measurement value deviates from an allowable range based on a reference value, and an output unit outputting an error of the optical amplifier if the measurement value deviates from the allowable range.

Abstract: A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.

Abstract: It is an object of the present invention to obtain an image which is focused on all portions of a sample and to provide a charged particle beam apparatus capable of obtaining a two-dimensional image which has no blurred part over an entire sample. In order to achieve the above object, the present invention comprises means for changing a focus condition of a charged particle beam emitted from a charged particle source, a charged particle detector for detecting charged particles irradiated from a surface portion of said sample in response to the emitted charged particle beam, and means for composing a two-dimensional image of the surface portion of the sample based on signals on which said charged particle beam is focused, said signals being among signals output from the charged particle detector.

Abstract: A technology is provided where a high performance Schottky-barrier diode and other semiconductor elements can be formed in the same chip controlling the increase in the number of steps. After a silicon oxide film is deposited over a substrate where an n-channel type MISFET is formed and the silicon oxide film over a gate electrode and n+ type semiconductor region is selectively removed, a Co film is deposited over the substrate and a CoSi2 layer is formed over the n+ type semiconductor region and the gate electrode by applying a heat treatment to the substrate.

Abstract: An optical amplifying device disposed on a transmission path of a WDM signal includes an optical amplifier amplifying the WDM signal, a detecting unit detecting a change in a transmission wavelength count contained in the WDM signal and/or a change in light receiving level of the optical amplifier, a measuring unit measuring an optical signal to noise (SN) ratio of the WDM signal outputted from the optical amplifier, an update unit updating a reference value for evaluating the measurement value of the optical SN ratio obtained by the measuring unit when the detecting unit detects the change, a judging unit judging whether or not the measurement value deviates from an allowable range based on a reference value, and an output unit outputting an error of the optical amplifier if the measurement value deviates from the allowable range.

Abstract: An operator-free and fully automated semiconductor inspection system with high throughput is realized. All conditions required for capturing and inspection are generated from design information such as CAD data. In order to perform actual inspection under the conditions, a semiconductor inspection system is composed of a navigation system for generating all the conditions required for capturing and inspection from the design information and a scanning electron microscope system for actually performing capturing and inspection. Moreover, in the case of performing a matching process between designed data and a SEM image, deformed parts are corrected by use of edge information in accordance with multiple directions and smoothing thereof. Furthermore, a SEM image corresponding to a detected position is re-registered as a template, and the matching process is thereby performed.

Abstract: A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.

Abstract: An operator-free and fully automated semiconductor inspection system with high throughput is realized. All conditions required for capturing and inspection are generated from design information such as CAD data. In order to perform actual inspection under the conditions, a semiconductor inspection system is composed of a navigation system for generating all the conditions required for capturing and inspection from the design information and a scanning electron microscope system for actually performing capturing and inspection. Moreover, in the case of performing a matching process between designed data and a SEM image, deformed parts are corrected by use of edge information in accordance with multiple directions and smoothing thereof. Furthermore, a SEM image corresponding to a detected position is re-registered as a template, and the matching process is thereby performed.

Abstract: A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.

Abstract: A vacuum valve includes a hermetically sealed vessel having an insulative cylinder, an end plate at a movable electrode end, and an end plate at a fixed electrode end. The vessel accommodates a movable contact and an opposed fixed contact. The movable contact is supported through a bellows allowing the contacts to open and close while maintaining an air-tight (hermetic) seal. The bellows used in at least one embodiment is a seam type bellows without metal plating. Nickel plating layers are formed on the end plate at movable contact end and on a cover, which are joined to the bellows. The ends of the bellows are soldered with the end plate and the cover using a silver solder at the solder joints.

Abstract: It is an object of the present invention to obtain an image which is focused on all portions of a sample and to provide a charged particle beam apparatus capable of obtaining a two-dimensional image which has no blurred part over an entire sample. In order to achieve the above object, the present invention comprises means for changing a focus condition of a charged particle beam emitted from a charged particle source, a charged particle detector for detecting charged particles irradiated from a surface portion of said sample in response to the emitted charged particle beam, and means for composing a two-dimensional image of the surface portion of the sample based on signals on which said charged particle beam is focused, said signals being among signals output from the charged particle detector.

Abstract: A switching control circuit includes a serial-to-parallel converter, a rewritable storage device, and a decoder. The serial-to-parallel converter performs serial-to-parallel conversion for converting an inputted first control signal into a first parallel signal, and outputs the first parallel signal. The rewritable storage device has a write mode and a read mode selectively switched over in response to a storage mode switching signal, stores therein data of the first parallel signal in the write mode, and outputs the stored data as a second parallel signal in the read mode. In the read mode, the decoder decodes the first control signal and the second parallel signal to generate and output a plurality of element control signals to a plurality of elements, respectively. In the write mode, the decoder holds the plurality of element control signals generated in the read mode.

Abstract: An optical transmission system includes an optical wavelength branching unit that shifts a wavelength transmission band in the short-wavelength or long-wavelength directions based on a branching filter operation temperature, and performs a branching operation on a wavelength-multiplexed signal. A reception transponder performs decoding on an error correction code. An error correction monitoring unit gathers an error correction amount upon which a branching filter temperature control unit sets the branching filter operation temperature. A transmission transponder performs encoding on an error correction code. An optical wavelength combining unit shifts the wavelength transmission band in the opposite direction from the shifting direction based on a combining filter operation temperature, to perform a combining operation on optical signals and output a wavelength-multiplexed optical signal.

Abstract: It is an object of the present invention to obtain an image which is focused on all portions of a sample and to provide a charged particle beam apparatus capable of obtaining a two-dimensional image which has no blurred part over an entire sample. In order to achieve the above object, the present invention comprises means for changing a focus condition of a charged particle beam emitted from a charged particle source, a charged particle detector for detecting charged particles irradiated from a surface portion of said sample in response to the emitted charged particle beam, and means for composing a two-dimensional image of the surface portion of the sample based on signals on which said charged particle beam is focused, said signals being among signals output from the charged particle detector.