Patents by Inventor Shuichi Tsukada
Shuichi Tsukada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200052698Abstract: A device includes a power supply line, an output terminal, a circuit configured to perform a logic operation on a first signal and a second signal to produce a third signal, first, second and third transistors. The first transistor is coupled between the power supply line and the output terminal and includes a control gate supplied with the third signal. The second and third transistors are coupled in series between the power supply line and the output terminal. The second transistor includes a control gate supplied with the first signal and the third transistor includes a control gate supplied with a fourth signal that is different from each of the first, second and third signals.Type: ApplicationFiled: October 17, 2019Publication date: February 13, 2020Applicant: Micron Technology, Inc.Inventors: Tetsuya Arai, Shuichi Tsukada, Junki Taniguchi
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Patent number: 10529392Abstract: Apparatuses for receiving an input signal in a semiconductor device are described. An example apparatus includes: a first amplifier that provides first and second intermediate voltages responsive to first and second input voltages; first and second voltage terminals; a circuit node; a first transistor coupled between the first voltage terminal and the circuit node and is turned on responsive to at least one of the first and second intermediate voltages; a second amplifier including first and second inverters, at least one of the first and second inverters being coupled between the circuit node and the second voltage terminal; and first and second output nodes, the first output node being coupled to an input node of the first inverter and an output node of the second inverter, and the second output node being coupled to an output node of the first inverter and an input node of the second inverter.Type: GrantFiled: May 21, 2019Date of Patent: January 7, 2020Assignee: Micron Technology, Inc.Inventor: Shuichi Tsukada
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Patent number: 10511306Abstract: A device includes a power supply line, an output terminal, a circuit configured to perform a logic operation on a first signal and a second signal to produce a third signal, first, second and third transistors. The first transistor is coupled between the power supply line and the output terminal and includes a control gate supplied with the third signal. The second and third transistors are coupled in series between the power supply line and the output terminal. The second transistor includes a control gate supplied with the first signal and the third transistor includes a control gate supplied with a fourth signal that is different from each of the first, second and third signals.Type: GrantFiled: July 26, 2016Date of Patent: December 17, 2019Assignee: Micron Technology, Inc.Inventors: Tetsuya Arai, Shuichi Tsukada, Junki Taniguchi
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Publication number: 20190272858Abstract: Apparatuses for receiving an input signal in a semiconductor device are described. An example apparatus includes: a first amplifier that provides first and second intermediate voltages responsive to first and second input voltages; first and second voltage terminals; a circuit node; a first transistor coupled between the first voltage terminal and the circuit node and is turned on responsive to at least one of the first and second intermediate voltages; a second amplifier including first and second inverters, at least one of the first and second inverters being coupled between the circuit node and the second voltage terminal; and first and second output nodes, the first output node being coupled to an input node of the first inverter and an output node of the second inverter, and the second output node being coupled to an output node of the first inverter and an input node of the second inverter.Type: ApplicationFiled: May 21, 2019Publication date: September 5, 2019Applicant: Micron Technology, Inc.Inventor: Shuichi Tsukada
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Patent number: 10373655Abstract: Apparatuses and methods for providing bias signals in a semiconductor device are described. An example apparatus includes a power supply configured to provide a supply voltage and further includes a bias circuit coupled to the power supply to produce a bias current. The bias circuit is configured to decrease the bias current as the supply voltage increases from a first value to a second value. The bias circuit continues to decrease the bias current as the supply voltage further increases from the second value in a first operation mode. The bias circuit also prevents the bias current from decreasing against a further increase of the supply voltage from the second value in a second operation mode.Type: GrantFiled: December 6, 2017Date of Patent: August 6, 2019Assignee: Micron Technology, Inc.Inventors: Kenji Asaki, Shuichi Tsukada, Sachiko Edo
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Patent number: 10339988Abstract: Apparatuses for receiving an input signal in a semiconductor device are described. An example apparatus includes: a first amplifier that provides first and second intermediate voltages responsive to first and second input voltages; first and second voltage terminals; a circuit node; a first transistor coupled between the first voltage terminal and the circuit node and is turned on responsive to at least one of the first and second intermediate voltages; a second amplifier including first and second inverters, at least one of the first and second inverters being coupled between the circuit node and the second voltage terminal; and first and second output nodes, the first output node being coupled to an input node of the first inverter and an output node of the second inverter, and the second output node being coupled to an output node of the first inverter and an input node of the second inverter.Type: GrantFiled: December 21, 2018Date of Patent: July 2, 2019Assignee: Micron Technology, Inc.Inventor: Shuichi Tsukada
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Publication number: 20190173470Abstract: An example apparatus according to an embodiment of the disclosure includes first and second voltage terminals, and first, second, and third circuit nodes. A potential of the first circuit node is changed based on an input signal. A flip-flop circuit includes first and second inverters cross-coupled to each other. The first inverter is coupled between the first voltage terminal and the second circuit node. A first transistor is coupled between the second and third circuit nodes, and the first transistor has a control electrode coupled to the first circuit node. A first current control circuit is coupled between the third circuit node and the second voltage terminal, and an amount of current flowing through the first current control circuit being controlled based on a first code signal.Type: ApplicationFiled: February 12, 2019Publication date: June 6, 2019Applicant: MICRON TECHNOLOGY, INC.Inventors: Hiroyuki Matsuno, Shuichi Tsukada
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Publication number: 20190172507Abstract: Apparatuses and methods for providing bias signals in a semiconductor device are described. As example apparatus includes a power supply line configured to provide a supply voltage and further includes first and second nodes. An impedance element is coupled between the power supply line and the first node and a first transistor having a gate, a source coupled to the first node, and a drain coupled to the second node. A reference line is configured to provide a reference voltage. A second transistor has a gate, a source coupled to the reference line, and a drain. The gate and the drain of the second transistor are coupled to the gate of the first transistor.Type: ApplicationFiled: December 21, 2018Publication date: June 6, 2019Inventors: Kenji Asaki, Shuichi Tsukada
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Publication number: 20190172505Abstract: Apparatuses and methods for providing bias signals in a semiconductor device are described. An example apparatus includes a power supply configured to provide a supply voltage and further includes a bias circuit coupled to the power supply to produce a bias current. The bias circuit is configured to decrease the bias current as the supply voltage increases from a first value to a second value. The bias circuit continues to decrease the bias current as the supply voltage further increases from the second value in a first operation mode. The bias circuit also prevents the bias current from decreasing against a further increase of the supply voltage from the second value in a second operation mode.Type: ApplicationFiled: December 6, 2017Publication date: June 6, 2019Applicant: MICRON TECHNOLOGY, INC.Inventors: Kenji Asaki, Shuichi Tsukada, Sachiko Edo
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Publication number: 20190115055Abstract: Apparatuses for receiving an input signal in a semiconductor device are described. An example apparatus includes: a first amplifier that provides first and second intermediate voltages responsive to first and second input voltages; first and second voltage terminals; a circuit node; a first transistor coupled between the first voltage terminal and the circuit node and is turned on responsive to at least one of the first and second intermediate voltages; a second amplifier including first and second inverters, at least one of the first and second inverters being coupled between the circuit node and the second voltage terminal; and first and second output nodes, the first output node being coupled to an input node of the first inverter and an output node of the second inverter, and the second output node being coupled to an output node of the first inverter and an input node of the second inverter.Type: ApplicationFiled: December 21, 2018Publication date: April 18, 2019Inventor: Shuichi Tsukada
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Patent number: 10211832Abstract: An example apparatus according to an embodiment of the disclosure includes first and second voltage terminals, and first, second, and third circuit nodes. A potential of the first circuit node is changed based on an input signal. A flip-flop circuit includes first and second inverters cross-coupled to each other. The first inverter is coupled between the first voltage terminal and the second circuit node. A first transistor is coupled between the second and third circuit nodes, and the first transistor has a control electrode coupled to the first circuit node. A first current control circuit is coupled between the third circuit node and the second voltage terminal, and an amount of current flowing through the first current control circuit being controlled based on a first code signal.Type: GrantFiled: December 5, 2017Date of Patent: February 19, 2019Assignee: Micron Technology, Inc.Inventors: Hiroyuki Matsuno, Shuichi Tsukada
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Patent number: 10204666Abstract: Apparatuses for receiving an input signal in a semiconductor device are described. An example apparatus includes: a first amplifier that provides first and second intermediate voltages responsive to first and second input voltages; first and second voltage terminals; a circuit node; a first transistor coupled between the first voltage terminal and the circuit node and is turned on responsive to at least one of the first and second intermediate voltages; a second amplifier including first and second inverters, at least one of the first and second inverters being coupled between the circuit node and the second voltage terminal; and first and second output nodes, the first output node being coupled to an input node of the first inverter and an output node of the second inverter, and the second output node being coupled to an output node of the first inverter and an input node of the second inverter.Type: GrantFiled: February 9, 2018Date of Patent: February 12, 2019Assignee: Micron Technology, Inc.Inventor: Shuichi Tsukada
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Patent number: 10199081Abstract: Apparatuses and methods for providing bias signals in a semiconductor device are described. As example apparatus includes a power supply line configured to provide a supply voltage and further includes first and second nodes. An impedance element is coupled between the power supply line and the first node and a first transistor having a gate, a source coupled to the first node, and a drain coupled to the second node. A reference line is configured to provide a reference voltage. A second transistor has a gate, a source coupled to the reference line, and a drain. The gate and the drain of the second transistor are coupled to the gate of the first transistor.Type: GrantFiled: December 6, 2017Date of Patent: February 5, 2019Assignee: Micron Technology, Inc.Inventors: Kenji Asaki, Shuichi Tsukada
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Publication number: 20180233180Abstract: Apparatuses for receiving an input signal in a semiconductor device are described. An example apparatus includes: a first amplifier that provides first and second intermediate voltages responsive to first and second input voltages; first and second voltage terminals; a circuit node; a first transistor coupled between the first voltage terminal and the circuit node and is turned on responsive to at least one of the first and second intermediate voltages; a second amplifier including first and second inverters, at least one of the first and second inverters being coupled between the circuit node and the second voltage terminal; and first and second output nodes, the first output node being coupled to an input node of the first inverter and an output node of the second inverter, and the second output node being coupled to an output node of the first inverter and an input node of the second inverter.Type: ApplicationFiled: February 9, 2018Publication date: August 16, 2018Applicant: Micron Technology, Inc.Inventor: Shuichi Tsukada
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Patent number: 9911471Abstract: Apparatuses for receiving an input signal in a semiconductor device are described. An example apparatus includes: a first amplifier that provides first and second intermediate voltages responsive to first and second input voltages; first and second voltage terminals; a circuit node; a first transistor coupled between the first voltage terminal and the circuit node and is turned on responsive to at least one of the first and second intermediate voltages; a second amplifier including first and second inverters, at least one of the first and second inverters being coupled between the circuit node and the second voltage terminal; and first and second output nodes, the first output node being coupled to an input node of the first inverter and an output node of the second inverter, and the second output node being coupled to an output node of the first inverter and an input node of the second inverter.Type: GrantFiled: February 14, 2017Date of Patent: March 6, 2018Assignee: Micron Technology, Inc.Inventor: Shuichi Tsukada
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Publication number: 20170353183Abstract: A device includes a power supply line, an output terminal, a circuit configured to perform a logic operation on a first signal and a second signal to produce a third signal, first, second and third transistors. The first transistor is coupled between the power supply line and the output terminal and includes a control gate supplied with the third signal. The second and third transistors are coupled in series between the power supply line and the output terminal. The second transistor includes a control gate supplied with the first signal and the third transistor includes a control gate supplied with a fourth signal that is different from each of the first, second and third signals.Type: ApplicationFiled: July 26, 2016Publication date: December 7, 2017Applicant: Micron Technology, Inc.Inventors: Tetsuya Arai, Shuichi Tsukada, Junki Taniguchi
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Patent number: 9286977Abstract: A semiconductor device including: a resistive memory element; a data line electrically coupled to the resistive memory element; a control line; a power supply line; and a control circuit including a first constant current element, a first transistor, and a second transistor. In the control circuit, the first transistor has a gate coupled to the data line, one of a source and a drain coupled to the first constant current element, and the other one of the source and the drain coupled to the power supply line. The second transistor has a gate coupled to one of the source and the drain of the first transistor, one of a source and a drain coupled to the data line, and the other one of the source and the drain coupled to the control line.Type: GrantFiled: August 29, 2014Date of Patent: March 15, 2016Assignee: Micron Technology, Inc.Inventor: Shuichi Tsukada
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Patent number: 9236123Abstract: A semiconductor device includes a memory cell array including a plurality of first and second memory cells each comprising a variable resistance element that establishes an electrical resistance that changes in response to an application of a write voltage after a forming voltage has been applied, the first memory cell to which the forming voltage is applied, and the second memory cell to which the forming voltage is not applied, and the second memory cell being configured to store one of first and second logic values constituting first information, the first and second logic values being different from each other.Type: GrantFiled: September 24, 2014Date of Patent: January 12, 2016Assignee: Micron Technology, Inc.Inventors: Akiko Maeda, Shuichi Tsukada, Yusuke Jono
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Patent number: RE45753Abstract: A semiconductor device includes: a first read/write amplifier; a second read/write amplifier; a first group of bit lines belonging to the first read/write amplifier; a second group of bit lines belonging to the second read/write amplifier and mixed with the first group of bit lines. One of the first group of bit lines and one of the second group of bit lines are selected in parallel. A reference potential is supplied to at least one of the first non-selected bit lines adjacent to the first selected bit line selected from the first group of bit lines, and to at least one of the second non-selected bit lines adjacent to the second selected bit line selected from the first group of bit lines. At least one of remaining ones of the first and second non-selected bit lines is set into a floating state.Type: GrantFiled: January 10, 2014Date of Patent: October 13, 2015Assignee: PS4 Luxco S.a.r.l.Inventors: Kiyoshi Nakai, Shuichi Tsukada
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Patent number: RE45861Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, a first insulating film region that is embedded in a trench formed on the semiconductor substrate, a gate electrode that covers a lower surface of the first insulating film region, and a gate insulating film that is provided between the gate electrode and the semiconductor substrate. The semiconductor device further includes a first diffusion region that covers a first side surface of the first insulating film region, a second diffusion region that covers a second side surface of the first insulating film region, and a third diffusion region that covers an upper surface of the second diffusion region. A selective element includes a field-effect transistor that is constituted by the gate electrode, the first diffusion region, and the second diffusion region, and a bipolar transistor that is constituted by the substrate and the second and third diffusion regions.Type: GrantFiled: March 5, 2015Date of Patent: January 19, 2016Assignee: PS4 LUXCO S.A.R.L.Inventors: Shuichi Tsukada, Yasuhiro Uchiyama