Abstract: Methods and assemblies related to fabrication of acoustic wave devices. In some embodiments, a method for fabricating an acoustic wave device can include attaching a first surface of a piezoelectric layer, such as a LiTaO3 or LiNbO3 layer, to a handling substrate, and performing a thinning operation on the piezoelectric layer to expose a second surface of a reduced-thickness piezoelectric layer attached to the handling substrate. The method can further include bonding the second surface of the reduced-thickness piezoelectric layer to a first surface of a permanent substrate, and removing the handling substrate from the reduced-thickness piezoelectric layer. The handling substrate can be, for example, a silicon substrate, and the permanent substrate can be, for example, a quartz substrate.

Abstract: Acoustic wave devices and related methods are disclosed. In some embodiments, an acoustic wave device can include a quartz substrate having a first surface, and a piezoelectric plate formed from LiTaO3 or LiNbO3 and having a first surface configured to support a surface acoustic wave and a second surface in engagement with the first surface of the quartz substrate. The second surface of the piezoelectric plate is a minus surface resulting from crystal structure orientation of the piezoelectric plate. The acoustic wave device can further include an interdigital transducer electrode formed on the first surface of the piezoelectric plate and configured to provide transducer functionality associated with the surface acoustic wave.

Abstract: A hydrogen gas recovery system according to the present ingestion is configured by a condensation and separation apparatus (A) that condenses and separates chlorosilanes from a hydrogen-containing reaction exhaust gas exhausted from a polycrystalline silicon production step, a compression apparatus (B) that compresses the hydrogen-containing reaction exhaust gas, an absorption apparatus (C) that absorbs and separates hydrogen chloride by contacting the hydrogen-containing reaction exhaust gas with an absorption liquid, a first adsorption apparatus (D) comprising an adsorption column filled with activated carbon for adsorbing and removing methane, hydrogen chloride, and part of the chlorosilanes each contained in the hydrogen-containing reaction exhaust gas, a second adsorption apparatus (E) comprising an adsorption column filled with synthetic zeolite that adsorbs and removes methane contained in the hydrogen-containing reaction exhaust gas, and a gas line (F) that recovers a purified hydrogen gas having a re

Abstract: An ingestible sensor according to an embodiment includes a sensor, a detector, and a transmitter and to be mixed with food and discharged without being digested or absorbed also when entering the inside of a body. The sensor is configured to detect a predetermined substance disposed inside the body. The detector is configured to detect whether or not the sensor has entered the inside of the body. The transmitter is configured to transmit information of the predetermined substance detected by the sensor to a communication device disposed outside the body based on a detection of an entrance of the sensor into the inside of the body that is made by the detector.

Abstract: A pressure sensor device capable of further decreasing dimensions of a pressure-sensitive element in which a semiconductor integrated circuit is integrated and increasing a spatial resolution and a method for manufacturing the pressure sensor device. A pressure sensor device includes a flexible wiring substrate and a plurality of pressure-sensitive elements in each of which a semiconductor integrated circuit is integrated. The pressure-sensitive elements are attached to one surface of the flexible wiring substrate and are electrically connected to wirings of the flexible wiring substrate. Pressure applied to the other surface of the flexible wiring substrate corresponding to an attachment position of each of the pressure-sensitive elements can be detected by a corresponding pressure-sensitive element through the flexible wiring substrate.

Abstract: A production method of an insert-molded product according to one embodiment of the present invention includes: bonding a plurality of positioning members to a back face side of a thin board-shaped decorative material; placing the decorative material in a mold such that the plurality of positioning members are inserted into positioning holes provided on the mold; and injecting a resin composition into the mold.

Abstract: An acoustic wave device that has a better TCF and can improve a resonator Q or impedance ratio is provided. The acoustic wave device includes a substrate 11 containing 70 mass % or greater of silicon dioxide (SiO2), a piezoelectric thin film 12 including LiTaO3 crystal or LiNbO3 crystal and disposed on the substrate 11, and an interdigital transducer electrode 13 disposed in contact with the piezoelectric thin film 12.

Abstract: Provided are a pressure sensor which exhibits exceptional performance and a method of producing the same. The pressure sensor includes: a silicon substrate having a cavity; a diaphragm which is formed of a metallic glass and has a tensile stress in a range in which a resonant frequency is higher than an audible range; and a counter electrode which is insulated from the diaphragm and has a plurality of holes. The diaphragm and the counter electrode are disposed on the silicon substrate to face each other with a gap therebetween, the diaphragm and the counter electrode being released from the silicon substrate by the cavity.

Abstract: A photovoltaic system includes power generators configured to generate power utilizing sunlight, inverters configured to convert the power generated by the power generators into alternating-current power output to a power system, a first limiter configured to limit output power of the inverters not more than a predetermined capacity, a second limiter configured to limit output power of at least one of the inverters to a level exceeding the predetermined capacity limited by the first limiter, when a predetermined condition is satisfied, and an inverter controller configured to control the output power of the inverters, based on the first limiter or the second limiter.

Abstract: Some embodiments include apparatuses and methods of using and forming such apparatuses. An apparatus among the apparatuses includes first and second conductive materials located in respective first and second levels of the apparatus, a pillar including a length extending between the first and second conductive materials, memory cells and control lines located along the pillar, a first select gate and a first select line located along the pillar between the first conductive material and the memory cells, a second select gate and a second select line located along the pillar between the first conductive material and the first select line, a first transistor and a first transistor gate line located along the pillar between the first conductive material and the first select line, and a second transistor and a second transistor gate line located along the pillar between the first conductive material and the first transistor.

Abstract: An elastic wave device includes a first IDT electrode on a first main surface of a LiNbO3 substrate, and a second IDT electrode on a second main surface thereof. The application of alternating voltages with reversed phases to each other to the first and second IDT electrodes excites plate waves in which SH waves in a high order mode predominate. The elastic wave device uses the plate waves in the high order mode in which the SH waves predominate.

Abstract: A hydrogen gas recovery system according to the present ingestion is configured by a condensation and separation apparatus (A) that condenses and separates chlorosilanes from a hydrogen-containing reaction exhaust gas exhausted from a polycrystalline silicon production step, a compression apparatus (B) that compresses the hydrogen-containing reaction exhaust gas, an absorption apparatus (C) that absorbs and separates hydrogen chloride by contacting the hydrogen-containing reaction exhaust gas with an absorption liquid, a first adsorption apparatus (D) comprising an adsorption column filled with activated carbon for adsorbing and removing methane, hydrogen chloride, and part of the chlorosilanes each contained in the hydrogen-containing reaction exhaust gas, a second adsorption apparatus (E) comprising an adsorption column filled with synthetic zeolite that adsorbs and removes methane contained in the hydrogen-containing reaction exhaust gas, and a gas line (F) that recovers a purified hydrogen gas having a re

Abstract: Some embodiments include apparatuses and methods of using and forming such apparatuses. An apparatus among the apparatuses includes first and second conductive materials located in respective first and second levels of the apparatus, a pillar including a length extending between the first and second conductive materials, memory cells and control lines located along the pillar, a first select gate and a first select line located along the pillar between the first conductive material and the memory cells, a second select gate and a second select line located along the pillar between the first conductive material and the first select line, a first transistor and a first transistor gate line located along the pillar between the first conductive material and the first select line, and a second transistor and a second transistor gate line located along the pillar between the first conductive material and the first transistor.

Abstract: Some embodiments include apparatuses and methods of using and forming such apparatuses. An apparatus among the apparatuses includes first and second conductive materials located in respective first and second levels of the apparatus, a pillar including a length extending between the first and second conductive materials, memory cells and control lines located along the pillar, a first select gate and a first select line located along the pillar between the first conductive material and the memory cells, a second select gate and a second select line located along the pillar between the first conductive material and the first select line, a first transistor and a first transistor gate line located along the pillar between the first conductive material and the first select line, and a second transistor and a second transistor gate line located along the pillar between the first conductive material and the first transistor.

Abstract: A surface acoustic wave (SAW) sensor includes a surface acoustic wave material and a comb-teeth electrode. The surface acoustic wave material is to be arranged at a place where the surface acoustic wave material is distorted by physical quantity such as stress. The comb-teeth electrode is arranged on the surface of the surface acoustic wave material to excite a surface acoustic wave to the surface acoustic wave material. The surface acoustic wave material has a sapphire board and a ScAlN film arranged on a surface of the sapphire board.

Abstract: A core wire holder 34 (holding member) has a taper of a positive taper angle on the lower end part thereof. On the other hand, in an adaptor 33 (supporting member) to be used for connection of a metal electrode 30 with the core wire holder 34 (holding member) for energization of a silicon core wire 100, the inner surface of a hole of the adaptor 33 into which the lower end part of the core wire holder 34 (holding member) is inserted, when the opening side of the hole is set upward and the insertion direction of the lower end part of the holding member is set downward, has a taper of a positive taper angle. The lower end part of the core wire holder 34 (holding member) is inserted in the hole of the adaptor 33 (supporting member) and the silicon core wire 100 is thus fixed.

Abstract: A sensor chip includes first and second electrodes that are exposed from the sensor chip and are made from materials different from each other. The sensor chip further includes a detection circuit that detects a target substance included in an analyte, the detection circuit being driven by a potential difference between the first and second electrodes, the potential difference being generated by an oxidation at the first electrode and a reduction at the second electrode while the analyte contacts the first and second electrodes, the analyte including an electrolyte.

Abstract: An elastic wave device includes a first IDT electrode on a first main surface of a LiNbO3 substrate, and a second IDT electrode on a second main surface thereof. The application of alternating voltages with reversed phases to each other to the first and second IDT electrodes excites plate waves in which SH waves in a high order mode predominate. The elastic wave device uses the plate waves in the high order mode in which the SH waves predominate.

Abstract: An integrated device with high insulation tolerance is provided. A groove having an inclined side surface is provided between adjacent devices. When a side where an electronic circuit or MEMS device is mounted is a front surface, the groove becomes narrower from the front surface to a back surface because of the inclined surface. A mold material (insulating material) is disposed inside the groove, so that the plurality of devices are mechanically joined together, being electrically insulated from one another. A line member that establishes an electrical conduction between the adjacent devices is formed to lie along the side surface and the bottom surface of the groove. To lead the line out to the backside, the bottom surface of the groove has a hole, so that the line member is exposed to the backside from the hole.

Abstract: An ingestible sensor according to an embodiment includes a sensor, a detector, and a transmitter and to be mixed with food and discharged without being digested or absorbed also when entering the inside of a body. The sensor is configured to detect a predetermined substance disposed inside the body. The detector is configured to detect whether or not the sensor has entered the inside of the body. The transmitter is configured to transmit information of the predetermined substance detected by the sensor to a communication device disposed outside the body based on a detection of an entrance of the sensor into the inside of the body that is made by the detector.