Abstract: A sensor chip includes first and second electrodes that are exposed from the sensor chip and are made from materials different from each other. The sensor chip further includes a detection circuit that detects a target substance included in an analyte, the detection circuit being driven by a potential difference between the first and second electrodes, the potential difference being generated by an oxidation at the first electrode and a reduction at the second electrode while the analyte contacts the first and second electrodes, the analyte including an electrolyte.

Abstract: A photovoltaic system includes power generators configured to generate power utilizing sunlight, inverters configured to convert the power generated by the power generators into alternating-current power output to a power system, a first limiter configured to limit output power of the inverters not more than a predetermined capacity, a second limiter configured to limit output power of at least one of the inverters to a level exceeding the predetermined capacity limited by the first limiter, when a predetermined condition is satisfied, and an inverter controller configured to control the output power of the inverters, based on the first limiter or the second limiter.

Abstract: A mixture containing methyldichlorosilane, tetrachlorosilane, and trichlorosilane is distilled to fractionate a fraction with a higher content of methyldichlorosilane than the mixture before distillation. Subsequently, the fraction thus fractionated is heated to disproportionate chlorine between methyldichlorosilane and tetrachlorosilane to disproportionate methyldichlorosilane into methyltrichlorosilane. Subsequently, the fraction after disproportionation containing methyltrichlorosilane is purified by distillation to separate high-purity trichlorosilane. Having a close boiling point to that of trichlorosilane (32° C.), which is a target product to be purified by distillation, removal of methyldichlorosilane (boiling point of 41° C.) has been difficult. The present invention removes methyldichlorosilane more easily by converting it into methyltrichlorosilane (boiling point of 66° C.) through disproportionation of chlorine between methyldichlorosilane and tetrachlorosilane.

Abstract: A touch sensor system includes buses, a plurality of touch sensor devices disposed on the buses, and an information integrating device that is connected to all the buses and integrates information from the touch sensor device. The touch sensor device includes a sensor unit and a signal processing unit that transmits a sensor data signal generated by processing an analog sensor signal to the information integrating device through the bus. The signal processing unit includes a digital converting unit, a threshold evaluating unit that gives a start permission of the signal process when a sensor value exceeds a preset threshold, an ID adding unit that adds a transmitter identification number to the sensor signal, and a data transmitting unit that outputs the sensor data signal to a signal line of the bus. Fast responses are made possible without increasing the amount of data and host processing load while including many touch sensor elements.

Abstract: A surface acoustic wave (SAW) sensor includes a surface acoustic wave material and a comb-teeth electrode. The surface acoustic wave material is to be arranged at a place where the surface acoustic wave material is distorted by physical quantity such as stress. The comb-teeth electrode is arranged on the surface of the surface acoustic wave material to excite a surface acoustic wave to the surface acoustic wave material. The surface acoustic wave material has a sapphire board and a ScAlN film arranged on a surface of the sapphire board.

Abstract: An integrated device with high insulation tolerance is provided. A groove having an inclined side surface is provided between adjacent devices. When a side where an electronic circuit or MEMS device is mounted is a front surface, the groove becomes narrower from the front surface to a back surface because of the inclined surface. A mold material (insulating material) is disposed inside the groove, so that the plurality of devices are mechanically joined together, being electrically insulated from one another. A line member that establishes an electrical conduction between the adjacent devices is formed to lie along the side surface and the bottom surface of the groove. To lead the line out to the backside, the bottom surface of the groove has a hole, so that the line member is exposed to the backside from the hole.

Abstract: Disclosed is a process for preparing a diaryl oxalate which comprises the step of transesterifying a dialkyl oxalate or/and an alkylaryl oxalate with an aryl alcohol in the presence of a tetra(aryloxy)titanium as a catalyst, wherein the tetra(aryloxy)titanium is fed into a reaction system of the transesterification as an aryl alcohol solution of the tetra(aryloxy)titanium which is prepared by reacting a tetraalkoxy titanium and an excess amount of the aryl alcohol and removing a by-producing alkyl alcohol.

Abstract: A dynamic quantity sensor includes a force receiving portion, a first movable portion that rotates in a first rotational direction around a first rotational axis according to dynamic quantity in a first direction that the force receiving portion receives, and rotates in the first rotational direction around the first rotational axis according to dynamic quantity in a second direction different from the first direction that the force receiving portion receives; and a second movable portion that rotates in a second rotational direction around a second rotational axis according to the dynamic quantity in the first direction that the force receiving portion receives, and rotates in an opposite direction to the second rotational direction around the second rotational axis according to the dynamic quantity in the second direction that the force receiving portion receives.

Abstract: The method comprises at least three steps of a hydrogenation step (101) and/or a chlorination step (102), an impurity conversion step (103), and a purification step (104). In the impurity conversion step (103), an aldehyde compound represented by the general formula Ar—R—CHO (Ar; denotes a substituted or unsubstituted aryl group, R; denotes an organic group having two or more carbon atoms) is added to convert donor impurities and acceptor impurities contained in a chlorosilane distillate to a high-boiling substance. The chlorosilane distillate after the donor impurities and acceptor impurities have been converted to a high-boiling substance is sent to the purification step (104). In the purification step (104), high purity chlorosilanes from which the donor impurities and acceptor impurities have been thoroughly removed are obtained by using a distillation column or the like, where the high purity chlorosilanes are recovered outside the system from the top of the column.

Abstract: Provided is a technique for packaging a sensor structure having a contact sensing surface and a signal processing LSI that processes a sensor signal. The sensor structure has the contact sensing surface and sensor electrodes. The signal processing integrated circuit is embedded in a semiconductor substrate. The sensor structure and the semiconductor substrate are bonded by a bonding layer, forming a sensor device as a single chip. The sensor electrodes and the integrated circuit are sealed inside the sensor device, and the sensor electrodes and external terminals of the integrated circuit are led out to the back surface of the semiconductor substrate through a side surface of the semiconductor substrate.

Abstract: By forming a metal layer 14 on at least one of a connecting electrode 12 of a first substrate 10 and a connecting electrode 17 of a second substrate 15, placing the first substrate 10 and the second substrate 15 together in order that the connecting electrode 12 and the connecting electrode 17 face opposite to each other via the metal layer 14, increasing temperature up to anodic bonding temperature, and applying DC voltage between the first substrate 10 and the second substrate 15 while maintaining that temperature, the first substrate 10 and the second substrate 15 are anodically bonded, and at the same time by melting the metal layer 14, the connecting electrode 12 and the connecting electrode 17 are electrically connected. The method achieves anodic bonding of substrates with high yield and at the same time establishes wiring connection, effective for packaging.

Abstract: A dynamic quantity sensor includes a force receiving portion, a first movable portion that rotates in a first rotational direction around a first rotational axis according to dynamic quantity in a first direction that the force receiving portion receives, and rotates in the first rotational direction around the first rotational axis according to dynamic quantity in a second direction different from the first direction that the force receiving portion receives; and a second movable portion that rotates in a second rotational direction around a second rotational axis according to the dynamic quantity in the first direction that the force receiving portion receives, and rotates in an opposite direction to the second rotational direction around the second rotational axis according to the dynamic quantity in the second direction that the force receiving portion receives.

Abstract: Provided are multiple normal stress detection sensor units capable of detecting a normal stress, and a sheet layer portion. The sheet layer portion includes an exterior sheet layer portion, a force detection sheet layer portion incorporating normal stress detection units, and an intermediary layer sandwiched between the exterior sheet layer portion and the force detection sheet layer portion. The exterior sheet layer portion and the force detection sheet layer portion include multiple protrusions protruding in directions opposed to each other, and are disposed such that the protrusions engage each other with the intermediary layer interposed therebetween. Each normal stress detection sensor unit includes a central portion detection sensor device disposed immediately below a central portion of the protrusion provided on the force detection sheet portion, and at least two edge detection sensor devices disposed immediately below edge portions of the protrusion provided on the force detection sheet portion.

Abstract: It is desirable to reduce chip area, lower on resistance and improve electric current driving capacity of a DMOS transistor in a semiconductor device with a DMOS transistor. On the surface of an N type epitaxial layer, a P+W layer of the opposite conductivity type (P type) is disposed and a DMOS transistor is formed in the P+W layer. The epitaxial layer and a drain region are insulated by the P+W layer. Therefore, it is possible to form both the DMOS transistor and other device element in a single confined region surrounded by an isolation layer. An N type FN layer is disposed on the surface region of the P+W layer beneath the gate electrode. An N+D layer, which is adjacent to the edge of the gate electrode of the drain layer side, is also formed. P type impurity layers (a P+D layer and a FP layer), which are located below the drain layer, are disposed beneath the contact region of the drain layer.

Abstract: There is a problem that a reverse off-leak current becomes too large in a Schottky barrier diode. A semiconductor device of the present invention includes P-type first and second anode diffusion layers formed in an N-type epitaxial layer, N-type cathode diffusion layers formed in the epitaxial layer, a P-type third anode diffusion layer formed in the epitaxial layer so as to surround the first and second anode diffusion layers and to extend toward the cathode diffusion layers, and a Schottky barrier metal layer formed on the first and second anode diffusion layers.

Abstract: The method comprises at least three steps of a hydrogenation step (101) and/or a chlorination step (102), an impurity conversion step (103), and a purification step (104). In the impurity conversion step (103), an aldehyde compound represented by the general formula Ar—R—CHO (Ar; denotes a substituted or unsubstituted aryl group, R; denotes an organic group having two or more carbon atoms) is added to convert donor impurities and acceptor impurities contained in a chlorosilane distillate to a high-boiling substance. The chlorosilane distillate after the donor impurities and acceptor impurities have been converted to a high-boiling substance is sent to the purification step (104). In the purification step (104), high purity chlorosilanes from which the donor impurities and acceptor impurities have been thoroughly removed are obtained by using a distillation column or the like, where the high purity chlorosilanes are recovered outside the system from the top of the column.

Abstract: The image forming apparatus includes a latent image bearing member; a charging device charging the surface of the latent image bearing member; a latent image forming device forming an electrostatic latent image on the surface of the latent image bearing member; a developing device supplying toner to the electrostatic latent image to form a toner image; a cover film supplying device supplying a cover film to the surface of the latent image bearing member at a cover film supplying position located on an upstream side from the development position so that the toner image is formed on the cover film covering the surface of the latent image bearing member; and a cover film separating device separating the cover film bearing the toner image thereon from the surface of the image bearing member before the cover film bearing the toner image thereon reaches the cover film supplying position.

Abstract: A method for fabricating a micromachine component of resin comprising step (a) of forming a sacrifice layer on a substrate, step (b) of forming at least two photosensitive resin composition layers sequentially on the sacrifice layer, and performing photolithography of each photosensitive resin composition layer to form an air gap portion defining the circumferential edge portion of the micromachine component and an air gap portion where an internal structure of the micromachine component is constituted to form a multilayer structure, step (c) for depositing dry film resist on the multilayer structure of the cured photosensitive resin composition layer, and performing photolithography of the dry film resist layer to form a cured dry film resist layer in which an air gap portion defining the circumferential edge of a shroud layer and an air gap where the structure of the shroud layer is constituted are formed, and step (d) for separating the micromachine component having the multilayer structure of the cured ph

Abstract: A process of forming an ultrafine crystal layer in a workpiece constituted by a metallic material. The process includes: performing a machining operation on a surface of the workpiece, so as to impart a large local strain to the machined surface of the workpiece, where the machining operation causes the machined surface of the workpiece to be subjected to a plastic working that causes to have large local strain in the form of a true strain of at least one, such that the ultrafine crystal layer is formed in a surface layer portion of the workpiece that defines the machined surface of the workpiece. Also disclosed are a nanocrystal layer forming process, a machine component having the ultrafine crystal layer or the nanocrystal layer, and a machine component producing process of producing the machine component.

Abstract: A mixture containing methyldichlorosilane, tetrachlorosilane, and trichlorosilane is distilled to fractionate a fraction with a higher content of methyldichlorosilane than the mixture before distillation. Subsequently, the fraction thus fractionated is heated to disproportionate chlorine between methyldichlorosilane and tetrachlorosilane to disproportionate methyldichlorosilane into methyltrichlorosilane. Subsequently, the fraction after disproportionation containing methyltrichlorosilane is purified by distillation to separate high-purity trichlorosilane. Having a close boiling point to that of trichlorosilane (32° C.), which is a target product to be purified by distillation, removal of methyldichlorosilane (boiling point of 41° C.) has been difficult. The present invention removes methyldichlorosilane more easily by converting it into methyltrichlorosilane (boiling point of 66° C.) through disproportionation of chlorine between methyldichlorosilane and tetrachlorosilane.