Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: An optoelectronic component may include a semiconductor body and a radiation transmissive bonding layer. The semiconductor body may include a first region of a first conductivity type, a second region of a second conductivity type, and an active region. The active region may be disposed between the first region and the second region. The first region may include a recess and a contact region adjacent to the recess. The active region may be arranged to emit electromagnetic radiation. The semiconductor body may have a first radiation exit surface at a main surface of the second region remote from the active region, and a portion of the electromagnetic radiation may exit the semiconductor body through the first radiation exit surface. The semiconductor body may include a first electrical connection layer and a second electrical connection layer where the second electrical connection layer is arranged at least partially in the recess.

Abstract: The invention relates to a method for producing a semiconductor component comprising performing a plasma treatment of an exposed surface of a semiconductor material with halogens, and carrying out a diffusion method with dopants on the exposed surface.

Abstract: An LED display having a plurality of pixels is described. The pixels each include at least one inorganic LED and at least one organic LED. Furthermore, a method of operating the LED display is specified.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: A radiation-emitting semiconductor chip may include a semiconductor body, a reflector, at least one cavity, and a seal. The semiconductor body may include an active region configured to generate electronic radiation. The reflector may be configured to reflect a portion of the electromagnetic radiation. The cavity may be filled with a material having a refractive index not exceeding 1.1. The seal may be impermeable to the material. The cavity may be arranged between the reflector and the semiconductor body, and the seal may cover the underside of the reflector.

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip having a radiation-emitting face; and an optical element arranged over the radiation-emitting face, wherein the optical element includes a material in which light-scattering particles are embedded, and a concentration of the embedded light-scattering particles has a gradient forming an angle not equal to 90° with the radiation emission face.

Abstract: A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45° to a resonator axis with a tolerance of at most 10°. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.

Abstract: A light source includes a plurality of semiconductor components, wherein a semiconductor component includes a plurality of light-emitting diodes, the diodes are arranged in a predefined grid in at least one column in or on the semiconductor component, and a control circuit that drives the individual diodes is arranged on the semiconductor component.

Abstract: An optoelectronic component may include a semiconductor body and a radiation transmissive bonding layer. The semiconductor body may include a first region of a first conductivity type, a second region of a second conductivity type, and an active region. The active region may be disposed between the first region and the second region. The first region may include a recess and a contact region adjacent to the recess. The active region may be arranged to emit electromagnetic radiation. The semiconductor body may have a first radiation exit surface at a main surface of the second region remote from the active region, and a portion of the electromagnetic radiation may exit the semiconductor body through the first radiation exit surface. The semiconductor body may include a first electrical connection layer and a second electrical connection layer where the second electrical connection layer is arranged at least partially in the recess.

Abstract: A method of operating a semiconductor light source, wherein the semiconductor light source includes at least one first light source that generates blue light; at least one second light source that generates bluish-white light; at least one third light source that produces greenish-white light; at least one fourth light source that generates red light, wherein no further light sources are present, the light sources can be controlled independently of one another, the light sources are operated in a continuous wave mode and not by pulse width modulation, and the semiconductor light source is operated such that all in all white mixed light having a tunable correlated color temperature is generated, and each of the light sources is operated exclusively with at least 5% of an intended maximum current in the switched-on state of the semiconductor light source so that an undercurrent operation of the light sources is prevented.

Abstract: A display device is disclosed. In an embodiment a display device includes at least one connection carrier comprising a multiplicity of switches and a multiplicity of light-emitting diode chips, wherein each light-emitting diode chip is mechanically fixed and electrically connected to the connection carrier, wherein each switch is designed for driving at least one light-emitting diode chip, and wherein the light-emitting diode chips are imaging elements of the display device.

Abstract: Disclosed is a method for producing a plurality of semiconductor chips (10). A composite (1), which comprises a carrier (4) and a semiconductor layer sequence (2, 3), is provided. Separating trenches (17) are formed in the semiconductor layer sequence (2, 3) along an isolation pattern (16). A filling layer (11) limiting the semiconductor layer sequence (2, 3) toward the separating trenches (17) is applied to a side of the semiconductor layer sequence (2, 3) facing away from the carrier (4). Furthermore, a metal layer (10) adjacent to the filling layer (11) is applied in the separating trenches (17). The semiconductor chips (20) are isolated by removing the metal layer (10) adjacent to the filling layer (11) in the separating trenches (17). Each isolated semiconductor chip (20) has one part of the semiconductor layer sequence (2, 3), and of the filling layer (11). Also disclosed is a semiconductor chip (10).

Abstract: An optoelectronic component includes at least one first carrier with at least two light emitting diodes, wherein the diodes have electrical connections, the electrical connections are led to contact areas, and the contact areas are arranged on an underside of the first carrier; and a second carrier, wherein further contact areas are arranged on a top side of the second carrier, the first carrier bears by the underside on the top side of the second carrier and fixedly connects to the second carrier, and an electronic circuit for open-loop and/or closed-loop control of the power supply of the diodes is integrated in the second carrier.

Abstract: A method of producing an optoelectronic component includes embedding an optoelectronic component part into a molded body such that an upper side of the optoelectronic component part is at least partially exposed on an upper side of the molded body; arranging and structuring a sacrificial layer above the upper side of the optoelectronic component part and the upper side of the molded body; arranging and structuring a layer of an optical material above the sacrificial layer; and removing the sacrificial layer.

Abstract: A light source is disclosed. In an embodiment a light source includes at least one first semiconductor emitter for generating first light, at least one second semiconductor emitter for generating second light, the second light having a different color than the first light, a light mixing body configured to produce a mixed light from the first and second lights and a detector on the light mixing body, the detector configured to determine a color locus of the mixed light, wherein the first and second semiconductor emitters are arranged along a line and have different distances from the detector, wherein the light mixing body is arranged on side surfaces of the first and second semiconductor emitters and in projection onto the side surfaces at least partially covers each of the side surfaces, so that the detector receives light from each of the first and second semiconductor emitters through the light mixing body.

Abstract: A method of operating a semiconductor light source, wherein the semiconductor light source includes at least one first light source that generates blue light; at least one second light source that generates bluish-white light; at least one third light source that produces greenish-white light; at least one fourth light source that generates red light, wherein no further light sources are present, the light sources can be controlled independently of one another, the light sources are operated in a continuous wave mode and not by pulse width modulation, and the semiconductor light source is operated such that all in all white mixed light having a tunable correlated color temperature is generated, and each of the light sources is operated exclusively with at least 5% of an intended maximum current in the switched-on state of the semiconductor light source so that an undercurrent operation of the light sources is prevented.

Abstract: A display device is disclosed. In an embodiment a display device includes at least one connection carrier comprising a multiplicity of switches and a multiplicity of light-emitting diode chips, wherein each light-emitting diode chip is mechanically fixed and electrically connected to the connection carrier, wherein each switch is designed for driving at least one light-emitting diode chip, and wherein the light-emitting diode chips are imaging elements of the display device.