Abstract: A light-emitting diode chip includes at least two semiconductor bodies, each semiconductor body including at least one active area that generates radiation, a carrier having a top side and an underside facing away from the top side, and an electrically insulating connector arranged at the top side of the carrier, wherein the electrically insulating connector is arranged between the semiconductor bodies and the top side of the carrier, the electrically insulating connector imparts a mechanical contact between the semiconductor bodies and the carrier, and at least some of the semiconductor bodies electrically connect in series with one another.

Abstract: An optoelectronic device (10, 1010) having a semiconductor layer structure (100, 1100) comprising a first light-active layer (140) and a second light-active layer (240). A first tunnel junction (200) is formed between the first light-active layer (140) and the second light-active layer (240). A first Bragg reflector (160) is formed between the first light-active layer (140) and the first tunnel junction (200). A second Bragg reflector (260) is formed between the second light-active layer (240) and the first tunnel junction (200).

Abstract: The invention relates to an optoelectronic semiconductor component (1) comprising:—an optoelectronic semiconductor chip (2), comprising—a growth substrate (21) having a growth surface (21a),—a layer sequence (22) with a semiconductor layer sequence (221, 222, 223) with an active zone (222) grown on the growth surface (21a),—contact points (29) for electrically contacting the semiconductor layer sequence (221, 222, 223) and—and insulation layer (26), which is formed in an electrically insulting manner—a connection carrier (4), which is mounted to the cover surface (2a) of the optoelectronic semiconductor chip facing away from the growth surface (21a), wherein—the semiconductor layer sequence (221, 222, 223) is connected to the connection carrier (4) in an electrically conducting manner and—a conversion layer (5) is applied to a bottom surface (21c) of the growth substrate (21) facing away from the growth surface (21a) and to all side surfaces (21b) of the growth substrate (21).

Abstract: A method of producing a semiconductor component includes providing a carrier with a first insulation layer, a mirror layer at least partially covered by the first insulation layer and a connection element, wherein the carrier includes an exposed planar mounting surface and the connection element extends through the first insulation layer to the mounting surface, providing a main body with a semiconductor body, a second insulation layer and a contact element to electrically contact the semiconductor body, wherein the main body has an exposed planar contact surface and the contact element extends through the second insulation layer to the contact surface, and connecting the main body to the carrier, wherein the planar contact surface and the planar mounting surface are brought together to form a connecting surface, and the contact element and the connection element electrically connect with one another.

Abstract: An optoelectronic component includes at least one first carrier with at least two light emitting diodes, wherein the diodes have electrical connections, the electrical connections are led to contact areas, and the contact areas are arranged on an underside of the first carrier; and a second carrier, wherein further contact areas are arranged on a top side of the second carrier, the first carrier bears by the underside on the top side of the second carrier and fixedly connects to the second carrier, and an electronic circuit for open-loop and/or closed-loop control of the power supply of the diodes is integrated in the second carrier.

Abstract: In at least one embodiment, a surface light source includes one or a more optoelectronic semiconductor chips having a radiation main side for generating a primary radiation. A scattering body is disposed downstream of the radiation main side along a main emission direction of the semiconductor chips. The scatting body is designed for scattering the primary radiation. A main emission direction of the scattering body is oriented obliquely with respect to the main emission direction of the semiconductor chip.

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip having a radiation-emitting face; and an optical element arranged over the radiation-emitting face, wherein the optical element includes a material in which light-scattering particles are embedded, and a concentration of the embedded light-scattering particles has a gradient forming an angle not equal to 90° with the radiation emission face.

Abstract: A method of producing a contact element for an optoelectronic component includes providing an auxiliary carrier with a sacrificial layer arranged on a top side of the auxiliary carrier; providing a carrier structure having a top side and a rear side situated opposite the top side, wherein an insulation layer is arranged at the rear side of the carrier structure; connecting the sacrificial layer to the insulation layer by an electrically conductive connection layer; creating at least one blind hole extending from the top side of the carrier structure as far as the insulation layer; opening the insulation layer in a region of the at least one blind hole; arranging an electrically conductive material in the at least one blind hole; detaching the auxiliary carrier by separating the sacrificial layer; and patterning the electrically conductive connection layer.

Abstract: An optoelectronic component includes at least one first carrier with at least two light emitting diodes, wherein each diode has two electrical connections, each electrical connection is led to a contact area, the contact areas are arranged on an underside of the first carrier, and a second carrier, wherein at least two zener diodes are arranged in the second carrier, the zener diodes have further electrical connections, each further electrical connection is led to a further contact area, the further contact areas are arranged on a top side of the second carrier, the first carrier bears by the underside on the top side of the second carrier and is fixedly connected to the second carrier, and the zener diodes antiparallelly connect to the diodes.

Abstract: An optoelectronic semiconductor component including an optoelectronic semiconductor chip having a first surface, wherein the first surface is a radiation emission surface of the optoelectronic semiconductor chip, the semiconductor chip is embedded in a mold body, the first surface is elevated with respect to a top side of the mold body, and a reflective layer is arranged on the top side of the mold body.

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a first surface. The semiconductor chip is embedded in a mold body. The first surface is elevated with respect to a top side of the mold body. A reflective layer is arranged on the top side of the mold body.

Abstract: An optoelectronic module (202, 204, 206, 208, 210, 212, 214, 216, 218, 220, 222, 224, 226, 228, 230, 232, 234) comprises a carrier (102), at which and/or in which are arranged at least two semiconductor chips (104, 104a1, 104a2, 104b; 106, 106a1, 106a2, 106b, 106c) for emitting electromagnetic radiation (108a, 108b). An emission unit (110) for emitting electromagnetic radiation (109) from the optoelectronic module (202, 204, 206, 208, 210, 212, 214, 216, 218, 220, 222, 224, 226, 228, 230, 232, 234) is arranged on or in the carrier (102). At least one of the semiconductor chips (106, 106a1, 106a2, 106b, 106c) is spaced apart from the emission unit (110). A waveguide (112) guides the electromagnetic radiation (108a) of the at least one spaced-apart semiconductor chip (106, 106a1, 106a2, 106b, 106c) to the emission unit (110). The emission unit (110) has a coupling-out structure (114, 114a, 114b, 114c) for coupling out the electromagnetic radiation (108a) from the waveguide (112).

Abstract: An optoelectronic device (10, 1010) having a semiconductor layer structure (100, 1100) comprising a first light-active layer (140) and a second light-active layer (240). A first tunnel junction (200) is formed between the first light-active layer (140) and the second light-active layer (240). A first Bragg reflector (160) is formed between the first light-active layer (140) and the first tunnel junction (200). A second Bragg reflector (260) is formed between the second light-active layer (240) and the first tunnel junction (200).

Abstract: A radiation-emitting semiconductor device includes at least one semiconductor chip having a semiconductor layer sequence having an active region that produces radiation; a mounting surface on which at least one electrical contact for external contacting of the semiconductor chip is formed, wherein the mounting surface runs parallel to a main extension plane of the semiconductor layer sequence; a radiation exit surface running at an angle to or perpendicularly to the mounting surface; a radiation-guiding layer arranged in a beam path between the semiconductor chip and the radiation exit surface; and a reflector body adjacent to the radiation-guiding layer in regions and in a top view of the semiconductor device covers the semiconductor chip.

Abstract: An optical arrangement includes a multiplicity of light-emitting chips on a carrier. In this case, first light-emitting chips respectively include pixels of a first group and second light-emitting chips respectively comprise pixels of a second group. Respectively one of the first and one of the second light-emitting chips are arranged in first unit cells in a planar fashion on the carrier. Furthermore, an optical element is provided, which is disposed downstream of the light-emitting chips in the emission direction. It is designed to guide light emitted by the pixels of the first and second groups in such a way that light from the pixels of the first group and light from the pixels of the second group are combined in second unit cells in a coupling-out plane, wherein the second unit cells each have an area that is smaller than the area of each of the first unit cells.

Abstract: The present application relates to a method of producing an optoelectronic component. An optoelectronic is produced by this method. An optoelectronic semiconductor chip has a first surface. A sacrificial layer is deposited on the first surface. The optoelectronic semiconductor chip is at least partially embedded in a mold body and the sacrificial layer is removed.

Abstract: A method can be used for for producing an optoelectronic component. An optoelectronic semiconductor chip has a front face and a rear face. A sacrificial layer is applied to the rear face. A molded body is formed the optoelectronic semiconductor chip being at least partially embedded in the molded body. The sacrificial layer is removed.

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip with a first surface and a second surface. The component also includes a protective chip which has a protective diode, a first surface and a second surface. The semiconductor chip and the protective chip are embedded in a molded body. A first electrical contact and a second electrical contact are arranged on the first surface of the semiconductor chip. A third electrical contact and a fourth electrical contact are arranged on the first surface of the protective chip. The first electrical contact is electrically connected to the third electrical contact. In addition, the second electrical contact is electrically connected to the fourth electrical contact.

Abstract: A method of producing an optoelectronic component includes providing a carrier having a carrier surface, a first lateral section of the carrier surface being raised relative to a second lateral section of the carrier surface; arranging an optoelectronic semiconductor chip having a first surface and a second surface on the carrier surface, wherein the first surface faces toward the carrier surface; and forming a molded body having an upper side facing toward the carrier surface and a lower side opposite the upper side, the semiconductor chip being at least partially embedded in the molded body.

Abstract: An optoelectronic module has at least one semiconductor chip for emitting electromagnetic radiation. The semiconductor chip has a layer having a first conductivity, a layer having a second conductivity, a radiation surface and a contact surface which lies opposite the radiation surface. A contact is attached to the radiation surface. A frame made of a potting compound laterally encloses the semiconductor chip in at least some regions such that the radiation surface and the contact surface are substantially free of the potting compound. A first contact structure is arranged in at least some regions on the frame and in at least some regions on the contact surface. A second contact structure is arranged in at least some regions on the frame and in at least some regions on the contact of the radiation surface.