Abstract: An optoelectronic semi-conductor component includes an optoelectronic semi-conductor chip embedded into an electrically-insulating shaped body that has an upper face and a lower face. In the shaped body, an electrical via is also embedded which forms an electrically-conductive connection between the upper face and the lower face of the shaped body. On the upper face of the shaped body, a reflective layer is arranged which forms an electrically-conductive connection between an electrical semi-conductor chip contact and the via. The reflective layer covers at least 50% of the upper face of the shaped body.

Abstract: An optoelectronic semiconductor component and a method for making an optoelectronic semiconductor component are disclosed. In an embodiment the component includes a carrier including at least one conversion-medium body and a potting body, the potting body surrounding the conversion-medium body at least in places, as seen in plan view, electrical contact structures fitted at least indirectly to the carrier and a plurality of optoelectronic semiconductor chips fitted to a main face of the carrier, the optoelectronic semiconductor chips configured to generate radiation, wherein the conversion-medium body is shaped as a plate, wherein the semiconductor chips are directly mechanically connected to the conversion-medium body, and wherein the conversion-medium body is free of cutouts for the electrical contact structures and is not penetrated by the electrical contact structure.

Abstract: An optoelectronic semi-conductor component includes an optoelectronic semi-conductor chip embedded into an electrically-insulating shaped body that has an upper face and a lower face. In the shaped body, an electrical via is also embedded which forms an electrically-conductive connection between the upper face and the lower face of the shaped body. On the upper face of the shaped body, a reflective layer is arranged which forms an electrically-conductive connection between an electrical semi-conductor chip contact and the via. The reflective layer covers at least 50% of the upper face of the shaped body.

Abstract: Disclosed is a non-transitory computer-readable storage medium that stores a game program that processes progress of a game using a plurality of game mediums, the game program causing a computer to execute: moving each of the game mediums along a predetermined path in a game field including a plurality of regions; first displaying a selection object capable of selecting at least one of the plurality of regions so that the selection object is fired according to an operation detected by a predetermined input unit; and changing, when one of the plurality of regions is selected by the selection object, an attribute set in the region to change the predetermined path where the game medium moves.

Abstract: An optoelectronic component includes at least one first carrier with at least two light emitting diodes, wherein each diode has two electrical connections, each electrical connection is led to a contact area, the contact areas are arranged on an underside of the first carrier, and a second carrier, wherein at least two zener diodes are arranged in the second carrier, the zener diodes have further electrical connections, each further electrical connection is led to a further contact area, the further contact areas are arranged on a top side of the second carrier, the first carrier bears by the underside on the top side of the second carrier and is fixedly connected to the second carrier, and the zener diodes antiparallelly connect to the diodes.

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a first surface. The semiconductor chip is embedded in a mold body. The first surface is elevated with respect to a top side of the mold body. A reflective layer is arranged on the top side of the mold body.

Abstract: A carrier (1) for an optoelectronic structure (2) is specified, wherein in places an electrically insulating passivation material (16) is arranged between an electrically conductive layer (14) of the carrier (1) and a carrier-side connecting means layer (15). Furthermore, an optoelectronic semiconductor chip comprising such a carrier and an optoelectronic structure (2) is specified, said structure being electrically conductively and mechanically connected to the carrier (1) by means of the carrier-side connecting means layer (15).

Abstract: A method of producing at least one optoelectronic semiconductor chip includes providing at least one optoelectronic structure, including a growth support and a semiconductor layer sequence with an active region, the semiconductor layer sequence being deposited epitaxially on the growth support, providing a carrier, applying the at least one optoelectronic structure onto the carrier with its side remote from the growth support, coating the at least one optoelectronic structure with a protective material, the protective material covering the outer face, remote from the carrier, of the growth support and side faces of the growth support and of the semiconductor layer sequence, and detaching the growth support from the semiconductor layer sequence of the at least one optoelectronic structure.

Abstract: An optoelectronic semiconductor component has a volume-emitting sapphire flip-chip with an upper side and a lower side. This optoelectronic semiconductor component is embedded in an optically transparent mold body with an upper side and a lower side.

Abstract: A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.

Abstract: An optoelectronic module has at least one semiconductor chip for emitting electromagnetic radiation. The semiconductor chip has a layer having a first conductivity, a layer having a second conductivity, a radiation surface and a contact surface which lies opposite the radiation surface. A contact is attached to the radiation surface. A frame made of a potting compound laterally encloses the semiconductor chip in at least some regions such that the radiation surface and the contact surface are substantially free of the potting compound. A first contact structure is arranged in at least some regions on the frame and in at least some regions on the contact surface. A second contact structure is arranged in at least some regions on the frame and in at least some regions on the contact of the radiation surface.

Abstract: In at least one embodiment, a surface light source includes one or a more optoelectronic semiconductor chips having a radiation main side for generating a primary radiation. A scattering body is disposed downstream of the radiation main side along a main emission direction of the semiconductor chips. The scatting body is designed for scattering the primary radiation. A main emission direction of the scattering body is oriented obliquely with respect to the main emission direction of the semiconductor chip.

Abstract: An optoelectronic component (1) comprises a carrier (2) and at least one semiconductor chip (3). The semiconductor chip (3) is arranged on the carrier (2) and designed for emitting a primary radiation (6). The semiconductor chip (3) is at least partly enclosed by an at least partly transparent medium (7) having a height (8) above the carrier (2) and a width (9) along the carrier (2). Particles (10, 11) are introduced into the medium (7) and interact with the primary radiation (6). The medium (7) has a ratio of the height (8) to the width (9) of greater than 1.

Abstract: An optoelectronic module (202, 204, 206, 208, 210, 212, 214, 216, 218, 220, 222, 224, 226, 228, 230, 232, 234) comprises a carrier (102), at which and/or in which are arranged at least two semiconductor chips (104, 104a1, 104a2, 104b; 106, 106a1, 106a2, 106b, 106c) for emitting electromagnetic radiation (108a, 108b). An emission unit (110) for emitting electromagnetic radiation (109) from the optoelectronic module (202, 204, 206, 208, 210, 212, 214, 216, 218, 220, 222, 224, 226, 228, 230, 232, 234) is arranged on or in the carrier (102). At least one of the semiconductor chips (106, 106a1, 106a2, 106b, 106c) is spaced apart from the emission unit (110). A waveguide (112) guides the electromagnetic radiation (108a) of the at least one spaced-apart semiconductor chip (106, 106a1, 106a2, 106b, 106c) to the emission unit (110). The emission unit (110) has a coupling-out structure (114, 114a, 114b, 114c) for coupling out the electromagnetic radiation (108a) from the waveguide (112).

Abstract: The invention relates to a light-emitting semiconductor component comprising a light-emitting semiconductor chip with a semiconductor layer series, a light out-coupling surface, a rear surface lying opposite said light out-coupling surface and lateral surfaces, and a support body with a shaped body that directly covers the lateral surfaces in form-locked manner, two electric contact layers and a thermal contact layer being provided on the rear surface. The thermal contact layer is electrically insulated from the electric contact layers and the semiconductor layer series, the support body has electric connection elements in direct contact with the electric contact layers and a thermal connection element in direct contact with the thermal contact layer on the rear surface and the thermal connection element at least partially forms an assembly surface of the semiconductor component facing away from the semiconductor chip. The invention further relates to a method for producing a semiconductor component.

Abstract: In at least one embodiment, the semiconductor component includes at least one optoelectronic semiconductor chip having a radiation exit side. The surface-mountable semiconductor component comprises a shaped body that covers side surfaces of the semiconductor chip directly and in a positively locking manner. The shaped body and the semiconductor chip do not overlap, as seen in a plan view of the radiation exit side.

Abstract: A method of producing a plurality of optoelectronic semiconductor chips includes a) providing a layer composite assembly having a principal plane which delimits the layer composite assembly in a vertical direction, and includes a semiconductor layer sequence having an active region that generates and/or detects radiation, wherein a plurality of recesses extending from the principal plane in a direction of the active region are formed in the layer composite assembly; b) forming a planarization layer on the principal plane such that the recesses are at least partly filled with material of the planarization layer; c) at least regionally removing material of the planarization layer to level the planarization layer; and d) completing the semiconductor chips, wherein for each semiconductor chip at least one semiconductor body emerges from the semiconductor layer sequence.

Abstract: Disclosed is an optoelectronic component (1) comprising a semiconductor function region (2) with an active zone (400) and a lateral main direction of extension, said semiconductor function region including at least one opening (9, 27, 29) through the active zone, and there being disposed in the region of the opening a connecting conductor material (8) that is electrically isolated (10) from the active zone in at least in a subregion of the opening. Further disclosed are a method for producing such an optoelectronic component and a device comprising a plurality of optoelectronic components. The component and the device can be produced entirely on-wafer.

Abstract: An optoelectronic component includes an optical pump device including a first radiation-generating layer and a first radiation exit area at a top side of the pump device, wherein electromagnetic radiation generated during operation of the pump device is coupled out from the pump device through the first radiation exit area transversely and at least in part non-perpendicularly with respect to the first radiation-generating layer, and a surface emitting semiconductor laser chip including a reflective layer sequence including a Bragg mirror, and a second radiation-generating layer, wherein the surface emitting semiconductor laser chip is fixed to the top side of the pump device, and the reflective layer sequence is arranged between the first radiation exit area and the second radiation-generating layer.

Abstract: A display device includes a multiplicity of pixels, at least one connection carrier, and a multiplicity of inorganic light-emitting diode chips. The connection carrier includes a multiplicity of switches. Each pixel contains at least one light-emitting diode chip. Each light-emitting diode chip is mechanically fixed and electrically connected to the connection carrier. Each switch is designed for driving at least one light-emitting diode chip and the light-emitting diode chips are imaging elements of the display device.