Abstract: A method of producing an optoelectronic component includes embedding an optoelectronic component part into a molded body such that an upper side of the optoelectronic component part is at least partially exposed on an upper side of the molded body; arranging and structuring a sacrificial layer above the upper side of the optoelectronic component part and the upper side of the molded body; arranging and structuring a layer of an optical material above the sacrificial layer; and removing the sacrificial layer.

Abstract: A radiation-emitting optoelectronic semiconductor component and a method for producing the same are disclosed. In an embodiment the semiconductor component includes a radiation passage surface, through which light produced during the operation of the semiconductor component passes, a first barrier layer arranged on a top side of the radiation passage surface and in direct contact with the radiation passage surface, a conversion element arranged on the top side of the first barrier layer, a second barrier layer arranged on the top side of the conversion element and on the top side of the first barrier layer, wherein the first barrier layer and the second barrier layer together completely enclose the conversion element, and wherein the first barrier layer and the second barrier layer are in direct contact with each other at some points.

Abstract: A method of producing an optoelectronic component includes providing a carrier having a carrier surface, a first lateral section of the carrier surface being raised relative to a second lateral section of the carrier surface; arranging an optoelectronic semiconductor chip having a first surface and a second surface on the carrier surface, wherein the first surface faces toward the carrier surface; and forming a molded body having an upper side facing toward the carrier surface and a lower side opposite the upper side, the semiconductor chip being at least partially embedded in the molded body.

Abstract: A display device includes a multiplicity of pixels, at least one connection carrier, and a multiplicity of inorganic light-emitting diode chips. The connection carrier includes a multiplicity of switches. Each pixel contains at least one light-emitting diode chip. Each light-emitting diode chip is mechanically fixed and electrically connected to the connection carrier. Each switch is designed for driving at least one light-emitting diode chip and the light-emitting diode chips are imaging elements of the display device.

Abstract: A light source includes a plurality of semiconductor components, wherein a semiconductor component includes a plurality of light-emitting diodes, the diodes are arranged in a predefined grid in at least one column in or on the semiconductor component, and a control circuit that drives the individual diodes is arranged on the semiconductor component.

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip with a first surface and a second surface. The component also includes a protective chip which has a protective diode, a first surface and a second surface. The semiconductor chip and the protective chip are embedded in a molded body. A first electrical contact and a second electrical contact are arranged on the first surface of the semiconductor chip. A third electrical contact and a fourth electrical contact are arranged on the first surface of the protective chip. The first electrical contact is electrically connected to the third electrical contact. In addition, the second electrical contact is electrically connected to the fourth electrical contact.

Abstract: The invention relates to a light-emitting semiconductor component comprising a light-emitting semiconductor chip with a semiconductor layer series, a light out-coupling surface, a rear surface lying opposite said light out-coupling surface and lateral surfaces, and a support body with a shaped body that directly covers the lateral surfaces in form-locked manner, two electric contact layers and a thermal contact layer being provided on the rear surface. The thermal contact layer is electrically insulated from the electric contact layers and the semiconductor layer series, the support body has electric connection elements in direct contact with the electric contact layers and a thermal connection element in direct contact with the thermal contact layer on the rear surface and the thermal connection element at least partially forms an assembly surface of the semiconductor component facing away from the semiconductor chip. The invention further relates to a method for producing a semiconductor component.

Abstract: Disclosed is a method for producing a plurality of semiconductor chips (10). A composite (1), which comprises a carrier (4) and a semiconductor layer sequence (2, 3), is provided. Separating trenches (17) are formed in the semiconductor layer sequence (2, 3) along an isolation pattern (16). A filling layer (11) limiting the semiconductor layer sequence (2, 3) toward the separating trenches (17) is applied to a side of the semiconductor layer sequence (2, 3) facing away from the carrier (4). Furthermore, a metal layer (10) adjacent to the filling layer (11) is applied in the separating trenches (17). The semiconductor chips (20) are isolated by removing the metal layer (10) adjacent to the filling layer (11) in the separating trenches (17). Each isolated semiconductor chip (20) has one part of the semiconductor layer sequence (2, 3), and of the filling layer (11). Also disclosed is a semiconductor chip (10).

Abstract: Disclosed is a conversion element (100). The conversion element (100) comprises: a conversion coating (16), which contains a wavelength-converting conversion material; a first encapsulation coating (30) on a first main surface (20) of the conversion coating, said first encapsulation coating having a thickness of between 10 ?m and 500 ?m; and a second encapsulation coating (32) on a second main surface (22) of the conversion coating, said second encapsulation coating having a thickness of between 0.1 ?m and 20 ?m. Also disclosed are an optoelectronic semiconductor component (200) and a method for producing conversion elements.

Abstract: A method of producing a contact element for an optoelectronic component includes providing an auxiliary carrier with a sacrificial layer arranged on a top side of the auxiliary carrier; providing a carrier structure having a top side and a rear side situated opposite the top side, wherein an insulation layer is arranged at the rear side of the carrier structure; connecting the sacrificial layer to the insulation layer by an electrically conductive connection layer; creating at least one blind hole extending from the top side of the carrier structure as far as the insulation layer; opening the insulation layer in a region of the at least one blind hole; arranging an electrically conductive material in the at least one blind hole; detaching the auxiliary carrier by separating the sacrificial layer; and patterning the electrically conductive connection layer.

Abstract: An optoelectronic semiconductor component has a volume-emitting sapphire flip-chip with an upper side and a lower side. This optoelectronic semiconductor component is embedded in an optically transparent mold body with an upper side and a lower side.

Abstract: A radiation-emitting semiconductor device includes at least one semiconductor chip having a semiconductor layer sequence having an active region that produces radiation; a mounting surface on which at least one electrical contact for external contacting of the semiconductor chip is formed, wherein the mounting surface runs parallel to a main extension plane of the semiconductor layer sequence; a radiation exit surface running at an angle to or perpendicularly to the mounting surface; a radiation-guiding layer arranged in a beam path between the semiconductor chip and the radiation exit surface; and a reflector body adjacent to the radiation-guiding layer in regions and in a top view of the semiconductor device covers the semiconductor chip.

Abstract: A method of producing a plurality of optoelectronic semiconductor chips includes a) providing a layer composite assembly having a principal plane which delimits the layer composite assembly in a vertical direction, and includes a semiconductor layer sequence having an active region that generates and/or detects radiation, wherein a plurality of recesses extending from the principal plane in a direction of the active region are formed in the layer composite assembly; b) forming a planarization layer on the principal plane such that the recesses are at least partly filled with material of the planarization layer; c) at least regionally removing material of the planarization layer to level the planarization layer; and d) completing the semiconductor chips, wherein for each semiconductor chip at least one semiconductor body emerges from the semiconductor layer sequence.

Abstract: The present application relates to a method of producing an optoelectronic component. An optoelectronic is produced by this method. An optoelectronic semiconductor chip has a first surface. A sacrificial layer is deposited on the first surface. The optoelectronic semiconductor chip is at least partially embedded in a mold body and the sacrificial layer is removed.

Abstract: A method can be used for producing an optoelectronic component. An optoelectronic semiconductor chip has a front face and a rear face. A sacrificial layer is applied to the rear face. A molded body is formed the optoelectronic semiconductor chip being at least partially embedded in the molded body. The sacrificial layer is removed.

Abstract: The invention relates to an optoelectronic semiconductor component (1) comprising:—an optoelectronic semiconductor chip (2), comprising—a growth substrate (21) having a growth surface (21a),—a layer sequence (22) with a semiconductor layer sequence (221, 222, 223) with an active zone (222) grown on the growth surface (21a),—contact points (29) for electrically contacting the semiconductor layer sequence (221, 222, 223) and—and insulation layer (26), which is formed in an electrically insulting manner—a connection carrier (4), which is mounted to the cover surface (2a) of the optoelectronic semiconductor chip facing away from the growth surface (21a), wherein—the semiconductor layer sequence (221, 222, 223) is connected to the connection carrier (4) in an electrically conducting manner and—a conversion layer (5) is applied to a bottom surface (21c) of the growth substrate (21) facing away from the growth surface (21a) and to all side surfaces (21b) of the growth substrate (21).

Abstract: An optoelectronic semiconductor component including an optoelectronic semiconductor chip having a first surface, wherein the first surface is a radiation emission surface of the optoelectronic semiconductor chip, the semiconductor chip is embedded in a mold body, the first surface is elevated with respect to a top side of the mold body, and a reflective layer is arranged on the top side of the mold body.

Abstract: An optoelectronic semiconductor component includes an optoelectronic thin-film chip; and a thermally conductive and electrically insulating element, wherein both the thin-film chip and the element are embedded in a molded body, a top surface of the thin-film chip and a bottom surface of the element are not covered by the molded body, the top surface of the thin-film chip is approximately flush with a top surface of the molded body, the bottom surface of the element is approximately flush with a bottom surface of the molded body, the molded body includes a first embedded conductor structure and a second embedded conductor structure, and the first conductor structure and the second conductor structure extends to the bottom surface of the molded body.

Abstract: In at least one embodiment, the semiconductor component includes at least one optoelectronic semiconductor chip having a radiation exit side. The surface-mountable semiconductor component comprises a shaped body that covers side surfaces of the semiconductor chip directly and in a positively locking manner. The shaped body and the semiconductor chip do not overlap, as seen in a plan view of the radiation exit side.

Abstract: An optoelectronic semiconductor component and a method for making an optoelectronic semiconductor component are disclosed. In an embodiment the component includes a carrier including at least one conversion-medium body and a potting body, the potting body surrounding the conversion-medium body at least in places, as seen in plan view, electrical contact structures fitted at least indirectly to the carrier and a plurality of optoelectronic semiconductor chips fitted to a main face of the carrier, the optoelectronic semiconductor chips configured to generate radiation, wherein the conversion-medium body is shaped as a plate, wherein the semiconductor chips are directly mechanically connected to the conversion-medium body, and wherein the conversion-medium body is free of cutouts for the electrical contact structures and is not penetrated by the electrical contact structure.