Patents by Inventor Steven R. Walther
Steven R. Walther has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11942343Abstract: The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for measuring the temperature of a wafer within an ion implantation system. An exemplary ion implantation system may include a robotic arm, one or more load lock chambers, a pre-implantation station, an ion implanter, a post-implantation station, and a controller. The pre-implantation station is configured to heat or cool a wafer prior to the wafer being implanted with ions by the ion implanter. The post-implantation station is configured to heat or cool a wafer after the wafer is implanted with ions by the ion implanter. The pre-implantation station and/or post-implantation station are further configured to measure a current temperature of a wafer. The controller is configured to control the various components and processes described above, and to determine a current temperature of a wafer based on information received from the pre-implantation station and/or post-implantation station.Type: GrantFiled: January 29, 2021Date of Patent: March 26, 2024Assignee: Advanced Ion Beam Technology, Inc.Inventors: Chien-Li Chen, Steven R. Walther
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Publication number: 20230054419Abstract: The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for measuring the temperature of a wafer within an ion implantation system. An exemplary ion implantation system may include a robotic arm, one or more load lock chambers, a pre-implantation station, an ion implanter, a post-implantation station, and a controller. The pre-implantation station is configured to heat or cool a wafer prior to the wafer being implanted with ions by the ion implanter. The post-implantation station is configured to heat or cool a wafer after the wafer is implanted with ions by the ion implanter. The pre-implantation station and/or post-implantation station are further configured to measure a current temperature of a wafer. The controller is configured to control the various components and processes described above, and to determine a current temperature of a wafer based on information received from the pre-implantation station and/or post-implantation station.Type: ApplicationFiled: January 29, 2021Publication date: February 23, 2023Inventors: Chien-Li CHEN, Steven R. WALTHER
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Publication number: 20210339034Abstract: Disclosed is a system and method for delivering reactive species from a plasma to a treatment area by scanning a linear array of stacked plasma elements across the treatment area. Reactive species output from each plasma element is calibrated, and during scanning each plasma element is modulated with a uniformity modulation and a dose modulation, enabling a predetermined contour dose distribution of reactive species to be delivered to the treatment area.Type: ApplicationFiled: May 2, 2021Publication date: November 4, 2021Inventor: Steven R. Walther
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Publication number: 20210242054Abstract: The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for measuring the temperature of a wafer within an ion implantation system. An exemplary ion implantation system may include a robotic arm, one or more load lock chambers, a pre-implantation station, an ion implanter, a post-implantation station, and a controller. The pre-implantation station is configured to heat or cool a wafer prior to the wafer being implanted with ions by the ion implanter. The post-implantation station is configured to heat or cool a wafer after the wafer is implanted with ions by the ion implanter. The pre-implantation station and/or post-implantation station are further configured to measure a current temperature of a wafer. The controller is configured to control the various components and processes described above, and to determine a current temperature of a wafer based on information received from the pre-implantation station and/or post-implantation station.Type: ApplicationFiled: January 29, 2021Publication date: August 5, 2021Inventors: Chien-Li CHEN, Steven R. WALTHER
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Patent number: 10076020Abstract: Methods and apparatus for igniting a process plasma within a plasma chamber are provided. One or more self-resonating devices are positioned within a plasma chamber relative to a plasma generation volume within the plasma chamber. The plasma generation volume is defined by the plasma chamber. Each of the self-resonating devices generates an ignition plasma. The ignition plasmas cause a partial ionization of an ignition gas. The partially ionized ignition gas allows for ignition of a process plasma by applying an electric field to the plasma generation volume.Type: GrantFiled: July 6, 2017Date of Patent: September 11, 2018Assignee: MKS Instruments, Inc.Inventors: Shaun T. Smith, Steven R. Walther, Chen Wu
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Publication number: 20170303382Abstract: Methods and apparatus for igniting a process plasma within a plasma chamber are provided. One or more self-resonating devices are positioned within a plasma chamber relative to a plasma generation volume within the plasma chamber. The plasma generation volume is defined by the plasma chamber. Each of the self-resonating devices generates an ignition plasma. The ignition plasmas cause a partial ionization of an ignition gas. The partially ionized ignition gas allows for ignition of a process plasma by applying an electric field to the plasma generation volume.Type: ApplicationFiled: July 6, 2017Publication date: October 19, 2017Inventors: Shaun T. Smith, Steven R. Walther, Chen Wu
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Patent number: 9736920Abstract: Methods and apparatus for igniting a process plasma within a plasma chamber are provided. One or more self-resonating devices are positioned within a plasma chamber relative to a plasma generation volume within the plasma chamber. The plasma generation volume is defined by the plasma chamber. Each of the self-resonating devices generates an ignition plasma. The ignition plasmas cause a partial ionization of an ignition gas. The partially ionized ignition gas allows for ignition of a process plasma by applying an electric field to the plasma generation volume.Type: GrantFiled: February 6, 2015Date of Patent: August 15, 2017Assignee: MKS Instruments, Inc.Inventors: Shaun T. Smith, Steven R. Walther, Chen Wu
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Publication number: 20160233055Abstract: Methods and apparatus for igniting a process plasma within a plasma chamber are provided. A quantity of metastable atoms generated within a metastable generation volume are provided along with an ignition gas to a plasma generation volume defined by a plasma chamber. The quantity of metastable atoms generated is sufficient to allow at least a predetermined quantity of the metastable atoms to flow from a first location within the plasma generation volume to a second location within the plasma generation volume. A process plasma is ignited within the plasma generation volume by applying an electric field to the plasma generation volume that includes the metastable atoms flowed therein.Type: ApplicationFiled: February 6, 2015Publication date: August 11, 2016Inventors: Shaun Smith, Steven R. Walther
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Publication number: 20160234924Abstract: Methods and apparatus for igniting a process plasma within a plasma chamber are provided. One or more self-resonating devices are positioned within a plasma chamber relative to a plasma generation volume within the plasma chamber. The plasma generation volume is defined by the plasma chamber. Each of the self-resonating devices generates an ignition plasma. The ignition plasmas cause a partial ionization of an ignition gas. The partially ionized ignition gas allows for ignition of a process plasma by applying an electric field to the plasma generation volume.Type: ApplicationFiled: February 6, 2015Publication date: August 11, 2016Inventors: Shaun T. Smith, Steven R. Walther, Chen Wu
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Publication number: 20140209820Abstract: Systems and methods for manufacturing a vacuum device, such as an electron emitter, that includes a foil exit window palced over and joined to a support grid. In one particular method, the vacuum chamber of an electron emitter has a thin foil forming an exit window at one end. The thin foil may be titanium or any suitable material and the foil will typically enlarge during a bonding process that attaches the foil to the support grid. In one manufacturing process, the support grid is provided with a surface that has contours, typically being smooth recessed surfaces, that the foil once enlarged can lie against as the vacuum pulls the foil against the grid.Type: ApplicationFiled: April 2, 2014Publication date: July 31, 2014Inventors: Kenneth J. Barry, Mark T. Brown, Michael L. Bufano, Gerald M. Friedman, Peter M. King, Matthew A. Medford, Anne L. Testoni, Steven R. Walther, Tzvi Avnery
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Patent number: 8766523Abstract: An exit window can include an exit window foil, and a support grid contacting and supporting the exit window foil. The support grid can have first and second grids, each having respective first and second grid portions that are positioned in an alignment and thermally isolated from each other. The first and second grid portions can each have a series of apertures that are aligned for allowing the passage of a beam therethrough to reach and pass through the exit window foil. The second grid portion can contact the exit window foil. The first grid portion can mask the second grid portion and the exit window foil from heat caused by the beam striking the first grid portion.Type: GrantFiled: September 14, 2012Date of Patent: July 1, 2014Assignee: Hitachi Zosen CorporationInventors: Steven R. Walther, Gerald M. Friedman, Michael L. Bufano
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Patent number: 8470616Abstract: Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region.Type: GrantFiled: June 21, 2012Date of Patent: June 25, 2013Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Paul Sullivan, Peter Nunan, Steven R. Walther
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Publication number: 20130009077Abstract: An exit window can include an exit window foil, and a support grid contacting and supporting the exit window foil. The support grid can have first and second grids, each having respective first and second grid portions that are positioned in an alignment and thermally isolated from each other. The first and second grid portions can each have a series of apertures that are aligned for allowing the passage of a beam therethrough to reach and pass through the exit window foil. The second grid portion can contact the exit window foil. The first grid portion can mask the second grid portion and the exit window foil from heat caused by the beam striking the first grid portion.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicant: HITACHI ZOSEN CORPORATIONInventors: Steven R. Walther, Gerald M. Friedman, Michael L. Bufano
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Patent number: 8339024Abstract: An exit window can include an exit window foil, and a support grid contacting and supporting the exit window foil. The support grid can have first and second grids, each having respective first and second grid portions that are positioned in an alignment and thermally isolated from each other. The first and second grid portions can each have a series of apertures that are aligned for allowing the passage of a beam therethrough to reach and pass through the exit window foil. The second grid portion can contact the exit window foil. The first grid portion can mask the second grid portion and the exit window foil from heat caused by the beam striking the first grid portion.Type: GrantFiled: July 16, 2010Date of Patent: December 25, 2012Assignee: Hitachi Zosen CorporationInventors: Steven R. Walther, Gerald M. Friedman, Michael L. Bufano
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Patent number: 8319196Abstract: A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter; a cooling mechanism within the pre-chill station configured to cool a wafer from ambient temperature to a predetermined range less than ambient temperature; a loading assembly coupled to the pre-chill station and the end station; and a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to the predetermined temperature range before any ion implantation into the wafer, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.Type: GrantFiled: May 2, 2011Date of Patent: November 27, 2012Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Jonathan G. England, Steven R. Walther, Richard S. Muka, Julian G. Blake, Paul J. Murphy, Reuel B. Liebert
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Publication number: 20120276684Abstract: Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region.Type: ApplicationFiled: June 21, 2012Publication date: November 1, 2012Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Paul Sullivan, Peter Nunan, Steven R. Walther
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Patent number: 8222053Abstract: Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region.Type: GrantFiled: October 22, 2009Date of Patent: July 17, 2012Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Paul Sullivan, Peter Nunan, Steven R. Walther
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Publication number: 20110207308Abstract: A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter; a cooling mechanism within the pre-chill station configured to cool a wafer from ambient temperature to a predetermined range less than ambient temperature; a loading assembly coupled to the pre-chill station and the end station; and a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to the predetermined temperature range before any ion implantation into the wafer, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.Type: ApplicationFiled: May 2, 2011Publication date: August 25, 2011Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Jonathan G. ENGLAND, Steven R. Walther, Richard S. Muka, Julian Blake, Paul J. Murphy, Reuel B. Liebert
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Patent number: 7993698Abstract: Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.Type: GrantFiled: September 23, 2006Date of Patent: August 9, 2011Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Julian Blake, Jonathan England, Scott Holden, Steven R. Walther, Reuel Liebert, Richard S. Muka, Ukyo Jeong, Jinning Liu, Kyu-Ha Shim, Sandeep Mehta
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Patent number: 7939424Abstract: A method for wafer bonding two substrates activated by ion implantation is disclosed. An in situ ion bonding chamber allows ion activation and bonding to occur within an existing process tool utilized in a manufacturing process line. Ion activation of at least one of the substrates is performed at low implant energies to ensure that the wafer material below the thin surface layers remains unaffected by the ion activation.Type: GrantFiled: September 17, 2008Date of Patent: May 10, 2011Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Yuri Erokhin, Paul Sullivan, Steven R. Walther, Peter Nunan