Abstract: Methods and apparatus are provided for scanning a charged particle beam. The apparatus includes scan elements and a scan signal generator for generating scan signals for scanning the charged particle beam in a scan pattern having a scan origin. In one embodiment, the apparatus includes a position controller for positioning the scan elements based on a parameter of the charged particle beam, such as energy. The scan elements may be positioned to achieve a fixed position of the scan origin for different beam energies. In another embodiment, the apparatus includes first and second sets of scan elements and a scan signal controller for controlling the scan signals supplied to the sets of scan elements based on a parameter of the charged particle beam, such as energy.

Abstract: A method and apparatus for controlling implantation during vacuum fluctuations along a beam line. Vacuum fluctuations may be detected based on a detected beam current and/or may be compensated for without measuring pressure in an implantation chamber. A reference level for an ion beam current can determined and a difference between the reference value and the measured ion beam current can be used to control parameters of the ion implantation process, such as a wafer scan rate. The difference value can also be scaled to account for two types of charge exchanging collisions that result in a decrease in detected beam current. A first type of collision, a non-line of sight collision, causes a decrease in detected beam current, and also a decrease in the total dose delivered to a semiconductor wafer. A second type of collision, a line of sight collision, causes a decrease in detected beam current, but does not affect a total dose delivered to the wafer.

Abstract: A method of generating a high purity (at least 98%) N.sup.+ ion beam using a multicusp ion source (10) having a chamber (11) formed by a cylindrical chamber wall (12) surrounded by a plurality of magnets (13), a filament (57) centrally disposed in said chamber, a plasma electrode (36) having an extraction orifice (41) at one end of the chamber, a magnetic filter having two parallel magnets (21, 22) spaced from said plasma electrode (36) and dividing the chamber (11) into arc discharge and extraction regions. The method includes ionizing nitrogen gas in the arc discharge region of the chamber (11), maintaining the chamber wall (12) at a positive voltage relative to the filament (57) and at a magnitude for an optimum percentage of N.sup.+ ions in the extracted ion beams, disposing a hot liner (45) within the chamber and near the chamber wall (12) to limit recombination of N.sup.+ ions into the N.sub.2.sup.+ ions, spacing the magnets (21, 22) of the magnetic filter from each other for optimum percentage of N.