Abstract: A plasma doping apparatus includes a plasma source that generates a pulsed plasma. A platen supports a substrate proximate to the plasma source for plasma doping. A structure absorbs a film which provides a plurality of neutrals when desorbed. A bias voltage power supply generates a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A radiation source irradiates the film absorbed on the structure, thereby desorbing the film and generating a plurality of neutrals that scatter ions from the plasma while the ions are being attracted to the substrate, thereby performing conformal plasma doping.

Abstract: Techniques for detecting wafer charging in a plasma processing system are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for detecting wafer charging in a plasma processing system. The apparatus may comprise a plasma chamber to produce a plasma discharge above a wafer in the plasma chamber. The apparatus may also comprise a biasing circuit to bias the wafer to draw ions from the plasma discharge towards the wafer. The apparatus may further comprise a detection mechanism to detect charge buildup on the wafer by measuring an electric field in one or more designated locations near a top surface of the wafer.

Abstract: A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system having a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber, an anode spaced from the platen, and a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, a parameter of an implant process is varied to at least partially compensate for undesired effects of interaction between ions being implanted and the substrate. For example, dose rate, ion energy, or both may be varied during the implant process. In another aspect, a pretreatment step includes accelerating ions from the plasma to the anode to cause emission of secondary electrons from the anode, and accelerating the secondary electrons from the anode to a substrate for pretreatment of the substrate.

Abstract: A method and apparatuses for providing improved electrical contact to a semiconductor wafer during plasma processing applications are disclosed. In one embodiment, an apparatus includes a wafer platen for supporting the wafer; and a plurality of electrical contact elements, each of the plurality of electrical contact elements are configured to provide a path for supplying a bias voltage from a bias power supply to the wafer on the wafer platen. The plurality of electrical contact elements are also geometrically arranged such that at least one electrical contact element contacts an inner surface region (e.g., region between a center of wafer and a distance approximately half of the radius of the wafer) and at least one electrical contact element contacts an outer annular surface region (e.g., region between an outer edge of wafer and a distance approximately half of the radius of the wafer).

Abstract: A method for fabricating a semiconductor-based device includes providing a substrate including a semiconductor layer, forming a gate dielectric layer on the semiconductor layer, forming a plasma including deuterium, plasma implanting deuterium from the plasma into the substrate, and annealing the substrate to promote passivation of the interface between the dielectric layer and the semiconductor layer.

Abstract: Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.

Abstract: A method includes receiving an input signal representative of a desired two-dimensional non-uniform dose pattern for a front surface of a workpiece, driving the workpiece relative to an ion beam to distribute the ion beam across the front surface of the workpiece, and controlling at least one parameter of an ion implanter when the ion beam is incident on the front surface of the workpiece to directly create the desired two-dimensional non-uniform dose pattern in one pass of the front surface of workpiece relative to the ion beam. The beam may be a scanned beam or a ribbon beam. An ion implanter is also provided.

Abstract: An ion beam monitoring system includes a charge neutralization system and a sensor. The charge neutralization system is configured to provide a compensating current to control a charge on a front surface of a wafer. The sensor is configured to sense the compensating current and provide a sensor signal in response to the compensating current, wherein the sensor signal is representative of a beam current of an ion beam. The charge neutralization system may include a plasma flood gun configured to provide the compensating current to the ion beam.

Abstract: A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

Abstract: Plasma ion implantation apparatus includes a process chamber, a platen located in the process chamber for supporting a substrate, a dopant source including a solid dopant element and a vaporizer to vaporize dopant material from the solid dopant element, a plasma source to produce a plasma containing ions of the dopant material, and an implant pulse source to apply implant pulses to the platen for accelerating the ions of the dopant material from the plasma into the substrate.

Abstract: An ion beam monitoring system includes a charge neutralization system and a sensor. The charge neutralization system is configured to provide a compensating current to control a charge on a front surface of a wafer. The sensor is configured to sense the compensating current and provide a sensor signal in response to the compensating current, wherein the sensor signal is representative of a beam current of an ion beam. The charge neutralization system may include a plasma flood gun configured to provide the compensating current to the ion beam.

Abstract: A Faraday dose and uniformity monitor can include a magnetically suppressed annular Faraday cup surrounding a target wafer. A narrow aperture can reduce discharges within Faraday cup opening. The annular Faraday cup can have a continuous cross section to eliminate discharges due to breaks. A plurality of annular Faraday cups at different radii can independently measure current density to monitor changes in plasma uniformity. The magnetic suppression field can be configured to have a very rapid decrease in field strength with distance to minimize plasma and implant perturbations and can include both radial and azimuthal components, or primarily azimuthal components. The azimuthal field component can be generated by multiple vertically oriented magnets of alternating polarity, or by the use of a magnetic field coil. In addition, dose electronics can provide integration of pulsed current at high voltage, and can convert the integrated charge to a series of light pulses coupled optically to a dose controller.

Abstract: Methods and apparatus are provided for plasma doping and ion implantation in an integrated processing system. The apparatus includes a process chamber, a beamline ion implant module for generating an ion beam and directing the ion beam into the process chamber, a plasma doping module including a plasma doping chamber that is accessible from the process chamber, and a wafer positioner. The positioner positions a semiconductor wafer in the path of the ion beam in a beamline implant mode and positions the semiconductor wafer in the plasma doping chamber in a plasma doping mode.

Abstract: The invention provides a wafer clamping apparatus and method for use in semiconductor processing. The apparatus includes a clamping component that holds a backside of the wafer to a supporting surface and cools the wafer to prevent overheating. The clamping component is a chemical compound, such as H2O, that covers at least a section of the supporting surface and can adhere the backside of the wafer to the supporting surface. The component undergoes one or more phase-changes (e.g., liquid to solid, solid to liquid, etc.) to facilitate various operations throughout the process. The phase-changes ensure that the wafer may be easily loaded onto and released from the supporting structure at the beginning and end of the process, respectively, while being securely held and cooled during the process.

Abstract: Methods and apparatus are provided for monitoring plasma parameters in plasma doping systems. A plasma doping system includes a plasma doping chamber, a platen located in the plasma doping chamber for supporting a workpiece, an anode spaced from the platen in the plasma doping chamber, a process gas source coupled to the plasma doping chamber, a pulse source for applying pulses between the platen and the anode, and a plasma monitor. A plasma containing ions of the process gas is produced in a plasma discharge region between the anode and the platen. The pulses accelerate ions from the plasma into the workpiece. The plasma monitor may include a sensing device which senses a spatial distribution of a plasma parameter, such as plasma density, that is indicative of dose distribution of ions implanted into the workpiece.

Abstract: A plasma implantation system and method implants ions from a plasma in a semiconductor substrate while the substrate is at two or more different positions. The semiconductor substrate may be moved during implantation processing, e.g., to help compensate for non-uniformities in the dose delivered to the substrate. In addition, only a portion of a substrate may be implanted during a portion of an implantation process for the substrate. A plurality of substrates may be simultaneously implantation processed in a same plasma implantation chamber, thereby potentially reducing implantation processing times.

Abstract: Methods and apparatus are provided for controlling the dose uniformity of ions implanted into a workpiece in a plasma doping system. The plasma doping system includes a plasma doping chamber containing a platen for supporting a workpiece and an anode spaced from the platen. Dose uniformity may be improved by rotating the wafer to average azimuthal variations. Magnetic elements may be positioned around the plasma discharge region to control the radial density distribution of the plasma. The anode may have a spacing from the workpiece that varies over the area of the anode. The anode may include anode elements that are individually adjustable.

Abstract: Methods and apparatus are provided for plasma doping and ion implantation in an integrated processing system. The apparatus includes a process chamber, a beamline ion implant module for generating an ion beam and directing the ion beam into the process chamber, a plasma doping module including a plasma doping chamber that is accessible from the process chamber, and a wafer positioner. The positioner positions a semiconductor wafer in the path of the ion beam in a beamline implant mode and positions the semiconductor wafer in the plasma doping chamber in a plasma doping mode.

Abstract: Methods and apparatus are provided for plasma doping of a workpiece. The plasma doping apparatus includes a housing defining a plasma doping chamber, a platen for supporting a workpiece in the plasma doping chamber, an anode spaced from the platen in the plasma doping chamber, a process gas source coupled to the plasma doping chamber, a vacuum vessel enclosing the plasma doping chamber and defining an outer chamber, a primary vacuum pump connected to the vacuum vessel, a pulse source for applying pulses to the anode, and a controller. The controller establishes a controlled plasma doping environment in the plasma doping chamber in a first mode, typically a plasma doping mode, and establishes a gas connection between the plasma doping chamber and the outer chamber in a second mode, typically a vacuum pumping and wafer exchange mode.

Abstract: A method and apparatus for controlling implantation during vacuum fluctuations along a beam line. Vacuum fluctuations may be detected based on a detected beam current and/or may be compensated for without measuring pressure in an implantation chamber. A reference level for an ion beam current can determined and a difference between the reference value and the measured ion beam current can be used to control parameters of the ion implantation process, such as a wafer scan rate. The difference value can also be scaled to account for two types of charge exchanging collisions that result in a decrease in detected beam current. A first type of collision, a non-line of sight collision, causes a decrease in detected beam current, and also a decrease in the total dose delivered to a semiconductor wafer. A second type of collision, a line of sight collision, causes a decrease in detected beam current, but does not affect a total dose delivered to the wafer.