Abstract: A semiconductor chip including a termination resistance and a semiconductor module including the semiconductor chip.

Abstract: A wiring substrate for a semiconductor chip includes a substrate having a first surface and a second surface opposite to the first surface. The substrate has at least one slot from the first surface to the second surface that exposes chip pads of a semiconductor chip mounted to the first surface. The substrate has first and second regions divided by the slot. A plurality of bonding pads is arranged along both side portions of the slot and the bonding pads are connected to bonding wires that are drawn from the chip pads through the slot. First and second conductive patterns are respectively formed in the first and second regions and respectively connected to the at least one bonding pad. A merging pattern extends from the first region to the second region to electrically connect the first conductive pattern and the second conductive pattern. A merging wire electrically connects the merging pattern and the at least one chip pad.

Abstract: Provided are a semiconductor memory device and a method of driving the device which can improve a noise characteristic of a voltage signal supplied to a memory cell of the device. The semiconductor memory device includes a first semiconductor chip and one or more second semiconductor chips stacked on the first chip. The first chip includes an input/output circuit for sending/receiving a voltage signal, a data signal, and a control signal to/from an outside system. The one or more second semiconductor chips each include a memory cell region for storing data. The second semiconductor chips receive at least one signal through one or more signal paths that are formed outside the input/output circuit of the first chip.

Abstract: A chip stack may include a first chip and a second chip stacked on the first chip. Each of the first and second chips may include a substrate having an active surface and an inactive surface opposite to the active surface; an internal circuit in the active surface; an I/O chip pad on the active surface and connected to the internal circuit through an I/O buffer; and a I/O connection pad connected to the I/O chip pad through the I/O buffer by a circuit wiring. A redistributed I/O chip pad layer may be on the active surface of the first chip, the redistributed I/O chip pad layer redistributing the I/O chip pad. The I/O connection pads of the first chip and the second chip may be electrically connected to each other by an electrical connecting part.

Abstract: Provided are a semiconductor memory device and a method of driving the device which can improve a noise characteristic of a voltage signal supplied to a memory cell of the device. The semiconductor memory device includes a first semiconductor chip and one or more second semiconductor chips stacked on the first chip. The first chip includes an input/output circuit for sending/receiving a voltage signal, a data signal, and a control signal to/from an outside system. The one or more second semiconductor chips each include a memory cell region for storing data. The second semiconductor chips receive at least one signal through one or more signal paths that are formed outside the input/output circuit of the first chip.

Abstract: In an integrated circuit (IC) chip and a flip chip package having the same, no wiring line is provided and the first electrode pad does not make contact with the wiring line in a pad area of the IC chip. Thus, the first bump structure makes contact with the first electrode regardless of the wiring line in the pad area. The second electrode pad makes contact with the wiring line in a pseudo pad area of the IC chip. Thus, the second bump structure in the pseudo pad area makes contact with an upper surface of the second electrode at a contact point(s) spaced apart from the wiring line under the second electrode.

Abstract: A wafer-level stack package includes semiconductor chips, first connection members, a second connection member, a substrate and an external connection terminal. The semiconductor chips have a power/ground pad and a signal pad. The first connection members are electrically connected to the power/ground pad and the signal pad of each of the semiconductor chips. The second connection member is electrically connected to at least one of the power/ground pads of each of the semiconductor chips, the power/ground pads being connected to the first connection members. The substrate supports the stacked semiconductor chips, the substrate including wirings that are electrically connected to the first connection members and the second connection member. The external connection terminal is provided on a surface of the substrate opposite to a surface where the semiconductor chips are stacked, wherein the external connection terminals are electrically connected to the wirings, respectively.

Abstract: A semiconductor package apparatus comprises: at least one semiconductor chip; and a circuit board on which the semiconductor chip is installed, wherein at least one conductive plane for improving power and/or ground characteristics is positioned on a side of the semiconductor chip. In this manner, fabrication cost for the semiconductor package apparatus can be mitigated, and power and/or ground characteristics can be improved so as to readily control impedance of signal lines. As a result, reliability of the operation of the semiconductor package apparatus can be improved, and noise and malfunction can be prevented.

Abstract: A decoupling capacitor, a wafer stack package including the decoupling capacitor, and a method of fabricating the wafer stack package are provided. The decoupling capacitor may include a first electrode formed on an upper surface of a first wafer, a second electrode formed on a lower surface of a second wafer, and an adhesive material having a high dielectric constant and combining the first wafer with the second wafer. In the decoupling capacitor the first and second electrodes operate as two electrodes of the decoupling capacitor, and the adhesive material operates as a dielectric of the decoupling capacitor.

Abstract: Provided is a method of fabricating a chip-on-chip (COC) semiconductor device. The method of fabricating a chip-on-chip (COC) semiconductor device may include preparing a first semiconductor device with a metal wiring having at least one discontinuous spot formed therein, preparing a second semiconductor device with at least one bump formed on a surface of the second semiconductor device corresponding to the at least one discontinuous spot, aligning the first semiconductor device onto the second semiconductor device, and connecting the at least one bump of the second semiconductor device to the at least one discontinuous spot formed in the metal wiring of the first semiconductor device.

Abstract: Provided is a semiconductor memory module allowing a filling member formed between a module substrate and memory chips mounted on the module substrate to completely fill the space between the module substrate and the memory chips. According to embodiments of the present invention, the semiconductor memory module includes a module substrate having at least one memory chip mounted on the substrate such that its edges are oblique to major and minor axes bisecting the module substrate. The oblique orientation allows for an improved opening between memory chips formed on the substrate so that the filling member may be properly formed between the module substrate and the memory chips to prevent voids where the filling member is not formed.

Abstract: Integrated circuit packages include an integrated circuit mounting substrate having a hole that defines an inner wall of the integrated circuit mounting substrate. An integrated circuit is provided in the hole. A sinuous lead frame extends from the integrated circuit and is connected to the inner wall. The sinuous lead frame extends back and forth along a given direction, and may include a U- and/or V-shape, and round and/or jagged portions. Related packaging methods are also disclosed.

Abstract: A semiconductor device in which a plurality of chips can be reliably stacked without reducing integration thereof. The semiconductor device includes a substrate on which a circuit is provided. Pads are disposed on the substrate for testing the circuit. At least one terminal is provided on the substrate. First conductors are used to electrically couple the pads and the circuit. Second conductors are used to electrically couple the at least one terminal and the circuit. A switching element is disposed in the middle of the first conductors to control the electrical connection between the pads and the circuit. A plurality of semiconductor devices may be stacked on top of one another to form a stacked module, wherein chip selection lines are formed, which extend to the bottom of each of the semiconductor devices to electrically couple chip selection terminals from among the at least one terminal of the semiconductor devices.

Abstract: Provided are a semiconductor memory device and a method of driving the device which can improve a noise characteristic of a voltage signal supplied to a memory cell of the device. The semiconductor memory device includes a first semiconductor chip and one or more second semiconductor chips stacked on the first chip. The first chip includes an input/output circuit for sending/receiving a voltage signal, a data signal, and a control signal to/from an outside system. The one or more second semiconductor chips each include a memory cell region for storing data. The second semiconductor chips receive at least one signal through one or more signal paths that are formed outside the input/output circuit of the first chip.

Abstract: A stack package may include a substrate having first and second faces opposite each other and an opening formed therein. The first semiconductor chip may be mounted on the first face of the substrate and include a through electrode in the middle region of the first semiconductor chip that is exposed through the opening. The second semiconductor chip may be stacked on the first semiconductor chip and electrically connected to the first semiconductor chip by the through electrode of the first semiconductor chip. The circuit pattern may be formed on the second face of the substrate and include a bonding pad arranged adjacent to the opening and electrically connected to the through electrode of the first semiconductor chip through the opening, an outer connection pad spaced apart from the bonding pad and a connection wiring extending from the opening to the outer connection pad via the bonding pad.

Abstract: A void that is created in a conductive electrode in a through hole that extends through an integrated circuit substrate can be used as a joining interface. For example, an integrated circuit structure includes an integrated circuit substrate having a conductive pad on a first face thereof, and a through hole that extends through the integrated circuit substrate from a second face of the integrated circuit substrate that is opposite to the first face and through the pad. A conductive electrode is provided in the through hole that extends from the second face to the first face through and onto the pad. The conductive electrode includes a void therein adjacent the second face. The void includes a void opening adjacent the second face that defines inner walls of the conductive electrode. A conductive material is provided in the void that directly contacts the inner walls of the conductive electrode. Related fabrication methods are also disclosed.

Abstract: Provided are a semiconductor memory device and a method of driving the device which can improve a noise characteristic of a voltage signal supplied to a memory cell of the device. The semiconductor memory device includes a first semiconductor chip and one or more second semiconductor chips stacked on the first chip. The first chip includes an input/output circuit for sending/receiving a voltage signal, a data signal, and a control signal to/from an outside system. The one or more second semiconductor chips each include a memory cell region for storing data. The second semiconductor chips receive at least one signal through one or more signal paths that are formed outside the input/output circuit of the first chip.

Abstract: A semiconductor package module having no solder balls and a method of manufacturing the semiconductor package module are provided. The semiconductor package module includes a module board on which a plurality of semiconductor devices are able to be mounted, a semiconductor package bonded on the module board using an adhesive, being wire-bondable to the module board, and having already undergone an electrical final test, second wires electrically connecting second bond pads of the semiconductor package to bond pads of the module board; and a third sealing resin enclosing the second wires and the semiconductor package. Because the semiconductor package module does not use solder balls, degradation of solder joint reliability (SJR) can be prevented. Further, the use of a semiconductor package that has already undergone an electrical test can reduce degradation of the yield of a completed semiconductor package module.

Abstract: Provided is a semiconductor package with enhanced joint reliability and methods of fabricating the same. The method includes: forming package units including a semiconductor chip interposed between a bottom layer and a top layer; and sequentially stacking the package units on a substrate. The bottom layer and the top layer are formed of a material having a lower modulus than the semiconductor chip. The semiconductor package includes: at least one package unit disposed on a substrate, the package unit including a semiconductor chip having a pad, a bottom layer and a top layer substantially surrounding the semiconductor chip, and a redistribution structure overlying the top layer. The redistribution structure is electrically connected to the pad.

Abstract: A stacked structure of semiconductor devices may include a plurality of stacked semiconductor devices, each having an upper surface and a lower surface and one or more via electrodes protruding from the upper surface to the lower surface. The via-electrodes may have upper parts (heads) protruding from the upper surface and lower parts (ends) protruding from the lower surface. The stacked semiconductor devices may be electrically connected to each other through the via-electrodes. A first adhesive film (e.g., patternable material) and a second adhesive film (e.g. puncturable material) may be formed between the stacked semiconductor devices. The stacked structure of semiconductor devices may be mounted on the upper surface of a printed circuit board (PCB) having a mount-specific adhesive film to form a semiconductor device package. The mounted stacked structure and the upper surface of the PCB may be further covered with a molding material.