Abstract: A mobile apparatus and method for processing files. The mobile apparatus includes: a file manipulation unit configured to receive a file operation request including a file path from an application; a file format discrimination unit configured to discriminate a file format from the file path; a file path changing unit configured to set a target file path based on the file format; and a file processing unit configured to process the operation request on the target file path.

Abstract: A method for fabricating a nonvolatile memory device includes forming a stacked structure having a plurality of interlayer dielectric layers and a plurality of sacrificial layers wherein interlayer dielectric layers and sacrificial layers are alternately stacked over a substrate, forming a first hole exposing a part of the substrate by selectively etching the stacked structure, forming a first insulation layer in the first hole, forming a second hole exposing the part of the substrate by selectively etching the first insulation layer, and forming a channel layer in the second hole.

Abstract: The technology of the present invention relates to a non-volatile memory device and a fabrication method thereof. The non-volatile memory device includes channel layers protruding vertically from a substrate, a plurality of hole-supply layers and a plurality of gate electrodes, which are alternately stacked along the channel layers, and a memory film interposed between the channel layers and the gate electrodes and between the hole-supply layers and the gate electrodes. According to this technology, the hole-supply layers are formed between the memory cells such that sufficient holes are supplied to the memory cells during the erase operation of the memory cells, whereby the erase operation of the memory cells is smoothly performed without using the GIDL current, and the properties of the device are protected from being deteriorated due to program/erase cycling.

Abstract: An industrial gripper includes a base plate, at least three finger units to be moved relative to the base plate, a supporting unit to support the finger units, a first drive unit coupled to the supporting unit to allow simultaneous angular displacement of the finger units toward an object, and a second drive unit coupled to the supporting unit to adjust orientation angles between the finger units. Each of the finger units includes an intermediation member to be moved in a first direction by the first drive unit, a grip member to grip the object by being moved in a second direction different from the first direction as a movement direction of the intermediation member, and a connection member to convert the first direction movement of the intermediation member into the second direction movement of the grip member.

Abstract: A pipelined A/D converter circuit includes a sample hold circuit configured to sample and hold an analog input signal, and output a sample hold signal, and an A/D converter circuit including A/D converter circuit parts connected to each other in cascade, and performs A/D conversion in a pipelined form. The pipelined A/D converter circuit part of each stage includes a sub-A/D converter circuit, a multiplier D/A converter circuit, and a precharge circuit. The sub-A/D converter circuit includes comparators, and A/D convert the input signal into a digital signal of predetermined bits, a multiplier D/A converter circuit for D/A converting the digital signal from the sub-A/D converter circuit into an analog control signal generated with a reference voltage served as a reference value, sample, hold and amplify the input signal by sampling capacitors based on the analog control signal.

Abstract: Provided are nanocrystal silicon layer structures formed using a plasma deposition technique, methods of forming the same, nonvolatile memory devices including the nanocrystal silicon layer structures, and methods of fabricating the nonvolatile memory devices. A method of forming a nanocrystal silicon layer structure includes forming a buffer layer on a substrate and forming a nanocrystal silicon layer on the buffer layer by a plasma deposition technique using silicon (Si)-containing gas and hydrogen (H2)-containing gas. In this method, the nanocrystal silicon layer can be directly deposited on a glass substrate using plasma vapor deposition without performing a post-processing process so that the fabrication of a nonvolatile memory device can be simplified, thereby reducing fabrication cost.

Abstract: Disclosed herein is an ejector for an injection molding machine used to extract a molded product formed inside a die, the ejector including: a first ejector plate which is movably installed in a moving plate for fixing the die; a second ejector plate which is separably connected to the first ejector plate; and an ejector pin which is installed in at least one of the first and second ejector plates so as to push outward the molded product.

Abstract: A thin film transistor (TFT), a method of forming the same and a flat panel display device having the same are disclosed.

Abstract: An industrial gripper includes a base plate, at least three finger units to be moved relative to the base plate, a supporting unit to support the finger units, a first drive unit coupled to the supporting unit to allow simultaneous angular displacement of the finger units toward an object, and a second drive unit coupled to the supporting unit to adjust orientation angles between the finger units. Each of the finger units includes an intermediation member to be moved in a first direction by the first drive unit, a grip member to grip the object by being moved in a second direction different from the first direction as a movement direction of the intermediation member, and a connection member to convert the first direction movement of the intermediation member into the second direction movement of the grip member.

Abstract: A virtual application creating system, a virtual application installing method, a native API calling method and a virtual application executing method are disclosed.

Abstract: The present invention relates to a virtual application program system, a storage device, a method of executing a virtual application program, and a method of protecting a virtual environment. The virtual application program system includes an execution control module for executing a virtual application program, and a virtual environment protection module loaded by the execution control module and configured to block non-permitted application programs from accessing a virtual environment accessed by the virtual application program. Accordingly, the virtual environment can be protected from a host application program, etc., and independency and security of a task using a virtual application program can be guaranteed.

Abstract: Provided are nanocrystal silicon layer structures formed using a plasma deposition technique, methods of forming the same, nonvolatile memory devices including the nanocrystal silicon layer structures, and methods of fabricating the nonvolatile memory devices. A method of forming a nanocrystal silicon layer structure includes forming a buffer layer on a substrate and forming a nanocrystal silicon layer on the buffer layer by a plasma deposition technique using silicon (Si)-containing gas and hydrogen (H2)-containing gas. In this method, the nanocrystal silicon layer can be directly deposited on a glass substrate using plasma vapor deposition without performing a post-processing process so that the fabrication of a nonvolatile memory device can be simplified, thereby reducing fabrication cost.

Abstract: A thin film transistor (TFT), a method of forming the same and a flat panel display device having the same are disclosed.

Abstract: A non-volatile memory device is capable of reducing an excessive leakage current due to a rough surface of a polysilicon and of realizing improved blocking function by forming the first oxide film including a silicon oxy-nitride (SiOxNy) layer using nitrous oxide (N2O) plasma, and by forming silicon-rich silicon nitride film, and a fabricating method thereof and a memory apparatus including the non-volatile memory device. Further, the non-volatile memory device can be fabricated on the glass substrate without using a high temperature process.

Abstract: Disclosed herein is an ejector for an injection molding machine used to extract a molded product formed inside a die, the ejector including: a first ejector plate which is movably installed in a moving plate for fixing the die; a second ejector plate which is separably connected to the first ejector plate; and an ejector pin which is installed in at least one of the first and second ejector plates so as to push outward the molded product.

Abstract: A non-volatile memory device includes a buffer oxide film on a substrate; a polysilicon layer on the buffer oxide film; a silicon oxy-nitride (SiON) layer on the polysilicon layer, a first insulator layer on the SiON layer, a nitride film on the first insulator, a second insulator layer on the nitride film, an electrode on the second insulator, and a source/drain in the polysilicon layer.

Abstract: A nonvolatile memory cell is capable of reducing an excessive current leakage due to a rough surface of a polysilicon and of performing even at a low temperature process by forming the first oxide film including a silicon oxynitride (SiOxNy) layer using nitrous oxide plasma and by forming a plurality of silicon nanocrystals in a nitride film by implanting a silicon nanocrystal on the nitride film by an ion implantation method, and a fabricating method thereof and a memory apparatus including the nonvolatile memory cell.

Abstract: An object of the present invention is to provide a system and method for stabilizing a web service. The system of the present invention includes a reception module unit (410) for receiving set information and cookie information. A cookie information checking module unit (420) determines whether a malicious click occurs in the visitor terminal using the cookie information and the set information. A transmission module unit (430) transmits an operation scenario to the web service server, and transmits detailed information about an abnormal visitor to the manager terminal. A database unit (440) stores the set information and the cookie information. A control module unit (450) compares the cookie information with the set information, creates new cookie information when the visitor is a first-time visitor, determines whether a malicious click occurs, and interrupts access of the visitor terminal or forcibly connects the visitor terminal to a specific site.

Abstract: The mold clamping unit comprises a column mounted in a transfer means and moving in forward and backward direction; a mold clamping piston in which clamping operation and clamping-releasing operation are performed; plurality of column teeth disposed on a surface of the column along an axial direction of the column; center bore provided in a central of the mold clamping piston; clamping tooth seating groove with a plurality of clamping teeth inside the mold clamping piston contacting the center bore; rotating plate with plurality of clamping tooth guide grooves separated from the clamping teeth in the axial direction of the column; and a teeth rod positioned in each of the clamping tooth guide groove, wherein each teeth rod is connected to each clamping teeth during the rotation of the rotating plate, for moving each clamping tooth in a central or radial direction of the rotating plate and clamping of the clamping tooth and the column can proceed.

Abstract: A non-volatile memory device is capable of reducing an excessive leakage current due to a rough surface of a polysilicon and of realizing improved blocking function by forming the first oxide film including a silicon oxy-nitride (SiOxNy) layer using nitrous oxide (N2O) plasma, and by forming silicon-rich silicon nitride film, and a fabricating method thereof and a memory apparatus including the non-volatile memory device. Further, the non-volatile memory device can be fabricated on the glass substrate without using a high temperature process.