Abstract: A method for depositing silicon oxynitride film structures is provided that is used to form planar waveguides. These film structures are deposited on substrates and the combination of the substrate and the planar waveguide is used in the formation of optical interposers and subassemblies. The silicon oxynitride film structures are deposited using low thermal budget processes and hydrogen-free oxygen and hydrogen-free nitrogen precursors to produce planar waveguides that exhibit low losses for optical signals transmitted through the waveguide of 1 dB/cm or less. The silicon oxynitride film structures and substrate exhibit low stress levels of less than 20 MPa.

Abstract: An optical subassembly includes a planar dielectric waveguide structure that is deposited at temperatures below 400 C. The waveguide provides low film stress and low optical signal loss. Optical and electrical devices mounted onto the subassembly are aligned to planar optical waveguides using alignment marks and stops. Optical signals are delivered to the submount assembly via optical fibers. The dielectric stack structure used to fabricate the waveguide provides cavity walls that produce a cavity, within which optical, optoelectronic, and electronic devices can be mounted. The dielectric stack is deposited on an interconnect layer on a substrate, and the intermetal dielectric can contain thermally conductive dielectric layers to provide pathways for heat dissipation from heat generating optoelectronic devices such as lasers.

Abstract: A semiconductor device including four transistors. Gates of first and third transistors extend longitudinally as part of a first linear strip. Gates of second and fourth transistors extend longitudinally as part of a second linear strip parallel to and spaced apart from first linear strip. Aligned first and second gate cut isolations separate gates of first and second transistor from gates of third transistor and fourth transistor respectively. First and second CB layers connect to the gate of first transistor and second transistor respectively. CA layer extends longitudinally between first end and second end of CA layer connects to CB layers. CB layers are electrically connected to gates of first transistor adjacent first end of CA layer and second transistor adjacent second end of CA layer respectively. CA layer extends substantially parallel to first and second linear strips and is substantially perpendicular to first and second CB layers.

Abstract: A semiconductor device is provided for implementing at least one logic element. The semiconductor device includes a semiconductor substrate. The first transistor and a second transistor are formed on the semiconductor substrate. Each transistor comprises a source, a drain, and a gate. The gate of the first transistor extends longitudinally as part of a first linear strip and the gate of the second transistor extends longitudinally as part of the second linear strip parallel to and spaced apart from the first linear strip. A first CB layer forms a local interconnect layer electrically connected to the gate of the first transistor. A second CB layer forms a local interconnect layer electrically connected to the gate of the second transistor. A CA layer forms a local interconnect layer extending longitudinally between a first end and a second end of the CA layer. The CA layer is electrically connected to the first and second CB layers.

Abstract: An optical subassembly includes a planar dielectric waveguide structure that is deposited at temperatures below 400 C. The waveguide provides low film stress and low optical signal loss. Optical and electrical devices mounted onto the subassembly are aligned to planar optical waveguides using alignment marks and stops. Optical signals are delivered to the submount assembly via optical fibers. The dielectric stack structure used to fabricate the waveguide provides cavity walls that produce a cavity, within which optical, optoelectronic, and electronic devices can be mounted. The dielectric stack is deposited on an interconnect layer on a substrate, and the intermetal dielectric can contain thermally conductive dielectric layers to provide pathways for heat dissipation from heat generating optoelectronic devices such as lasers.

Abstract: A method for depositing silicon oxynitride film structures is provided that is used to form planar waveguides. These film structures are deposited on substrates and the combination of the substrate and the planar waveguide is used in the formation of optical interposers and subassemblies. The silicon oxynitride film structures are deposited using low thermal budget processes and hydrogen-free oxygen and hydrogen-free nitrogen precursors to produce planar waveguides that exhibit low losses for optical signals transmitted through the waveguide of 1 dB/cm or less. The silicon oxynitride film structures and substrate exhibit low stress levels of less than 20 MPa.

Abstract: A method for forming hermetic seals between the cap and sub-mount for electronic and optoelectronic packages includes the formation of metal mounds on the sealing surfaces. Metal mounds, as precursors to a metal hermetic seal between the cap and sub-mount of a sub-mount assembly, facilitates the evacuation and purging of the volume created within cap and sub-mount assemblies prior to formation of the hermetic seal. The method is applied to discrete cap and sub-mount assemblies and also at the wafer level on singulated and non-singulated cap and sub-mount wafers. The method that includes the formation of the hermetic seal provides an inert environment for a plurality of electrical, optoelectrical, and optical die that are attached within an enclosed volume of the sub-mount assembly.

Abstract: A structure and method for the wafer level testing of interposer-based photonic integrated circuits is described that includes the formation of an upturned mirror structure and the method of utilizing the interposer-based mirror structure for electrical and optical testing of optoelectrical circuits that include emitting components such as lasers, detecting components such as photodetectors, and both emitting and detecting components. Electrical activation of the optoelectrical emitting or sending devices and the subsequent detection and measurement of the optical signals in detecting or receiving devices provides information on the operability or functionality of the PIC on the die at the wafer level, prior to die separation or singulation, using the electrical and optical components of the PIC circuit.

Abstract: A structure for, and method of, forming a first optoelectronic circuitry that generates an optical signal, a second optoelectronic circuitry that receives an optical signal, and a loopback waveguide that connects the output from the first optoelectronic circuitry to the second optoelectronic circuitry on an interposer substrate are described. The connected circuits, together comprising a photonic integrated circuit, are electrically tested using electrical signals that are provided via probing contact pads on the PIC die. Electrical activation of the optoelectrical sending devices and the subsequent detection and measurement of the optical signals in the receiving devices, in embodiments, provides information on the operability or functionality of the PIC on the die at the wafer level, prior to die separation or singulation, using the electrical and optical components of the PIC circuit.

Abstract: A structure and method for the wafer level testing of interposer-based photonic integrated circuits is described that includes the formation of an upturned mirror structure and the method of utilizing the interposer-based mirror structure for electrical and optical testing of optoelectrical circuits that include emitting components such as lasers, detecting components such as photodetectors, and both emitting and detecting components. Electrical activation of the optoelectrical emitting or sending devices and the subsequent detection and measurement of the optical signals in detecting or receiving devices provides information on the operability or functionality of the PIC on the die at the wafer level, prior to die separation or singulation, using the electrical and optical components of the PIC circuit.

Abstract: A structure for, and method of, forming a first optoelectronic circuitry that generates an optical signal, a second optoelectronic circuitry that receives an optical signal, and a loopback waveguide that connects the output from the first optoelectronic circuitry to the second optoelectronic circuitry on an interposer substrate are described. The connected circuits, together comprising a photonic integrated circuit, are electrically tested using electrical signals that are provided via probing contact pads on the PIC die. Electrical activation of the optoelectrical sending devices and the subsequent detection and measurement of the optical signals in the receiving devices, in embodiments, provides information on the operability or functionality of the PIC on the die at the wafer level, prior to die separation or singulation, using the electrical and optical components of the PIC circuit.

Abstract: A method for depositing silicon oxynitride film structures is provided that is used to form planar waveguides. These film structures are deposited on substrates and the combination of the substrate and the planar waveguide is used in the formation of optical interposers and subassemblies. The silicon oxynitride film structures are deposited using low thermal budget processes and hydrogen-free oxygen and hydrogen-free nitrogen precursors to produce planar waveguides that exhibit low losses for optical signals transmitted through the waveguide of 1 dB/cm or less. The silicon oxynitride film structures and substrate exhibit low stress levels of less than 20 MPa.

Abstract: A method for forming hermetic seals between the cap and sub-mount for electronic and optoelectronic packages includes the formation of metal mounds on the sealing surfaces. Metal mounds, as precursors to a metal hermetic seal between the cap and sub-mount of a sub-mount assembly, facilitates the evacuation and purging of the volume created within cap and sub-mount assemblies prior to formation of the hermetic seal. The method is applied to discrete cap and sub-mount assemblies and also at the wafer level on singulated and non-singulated cap and sub-mount wafers. The method that includes the formation of the hermetic seal provides an inert environment for a plurality of electrical, optoelectrical, and optical die that are attached within an enclosed volume of the sub-mount assembly.

Abstract: The invention described herein pertains to the structure and formation of dual core waveguide structures and to the formation of optical devices including spot size converters from these dual core waveguide structure for the receiving and routing of optical signals on substrates, interposers, and sub-mount assemblies.

Abstract: The invention described herein pertains to the structure and formation of dual core waveguide structures and to the formation of optical devices including spot size converters from these dual core waveguide structure for the receiving and routing of optical signals on substrates, interposers, and sub-mount assemblies.

Abstract: An optical subassembly includes a planar dielectric waveguide structure that is deposited at temperatures below 400 C. The waveguide provides low film stress and low optical signal loss. Optical and electrical devices mounted onto the subassembly are aligned to planar optical waveguides using alignment marks and stops. Optical signals are delivered to the submount assembly via optical fibers. The dielectric stack structure used to fabricate the waveguide provides cavity walls that produce a cavity, within which optical, optoelectronic, and electronic devices can be mounted. The dielectric stack is deposited on an interconnect layer on a substrate, and the intermetal dielectric can contain thermally conductive dielectric layers to provide pathways for heat dissipation from heat generating optoelectronic devices such as lasers.

Abstract: The invention described herein pertains to the structure and formation of an optical device that includes a planar laser and a waveguide. The planar laser has a large lateral QW-containing layer and a tapered section in a transition portion of the device structure that enable low diode leakage currents and facilitate transition of the optical signal from the laser to a transition waveguide, and in some embodiments, to a dilute waveguide.

Abstract: The invention described herein pertains to the structure and formation of dual core waveguide structures and to the formation of optical devices including spot size converters from these dual core waveguide structure for the receiving and routing of optical signals on substrates, interposers, and sub-mount assemblies.

Abstract: The invention described herein pertains to the structure and formation of dual core waveguide structures and to the formation of optical devices including spot size converters from these dual core waveguide structure for the receiving and routing of optical signals on substrates, interposers, and sub-mount assemblies.

Abstract: An optical subassembly includes a planar dielectric waveguide structure that is deposited at temperatures below 400 C. The waveguide provides low film stress and low optical signal loss. Optical and electrical devices mounted onto the subassembly are aligned to planar optical waveguides using alignment marks and stops. Optical signals are delivered to the submount assembly via optical fibers. The dielectric stack structure used to fabricate the waveguide provides cavity walls that produce a cavity, within which optical, optoelectronic, and electronic devices can be mounted. The dielectric stack is deposited on an interconnect layer on a substrate, and the intermetal dielectric can contain thermally conductive dielectric layers to provide pathways for heat dissipation from heat generating optoelectronic devices such as lasers.