Abstract: A semiconductor device includes a semiconductor chip having a first face and a second face on an opposite side to the first face, and including semiconductor elements arranged on the first face. Columnar electrodes are arranged above the first face, and electrically connected to any of the semiconductor elements. A first member is located around the columnar electrodes above the first face. An insulant covers the columnar electrodes and the first member. The first member is harder than the columnar electrodes and the insulant. The first member and the columnar electrodes are exposed from a surface of the insulant.

Abstract: At least one kind of herbal medicine selected from the group consisting of: Component (1): Longan aril, common fenugreek seed, Lycium fruit, songaria cynomorium herb, black sesame, Dipsacus japonicus root, Drynaria herb, flatstem milkvetch seed, black bean, stink-bug, sea horse and donkey glue. Component (2): Ligustrum fruit, oyster shell, yerbadetajo herb, mulberry fruit, cassia seed, mentha herb, mulberry leaf, gardenia fruit, green tea leaf, tangle weed, Chrysanthemum indicum L., Oldenlandia herbacea, plantago seed, plantago herb, wheat seed, feather cockscomb seed, chrysanthemum flower, dandelion herb, Isatis tinctoria L., barbated skullcup herb, snowbellleaf tickclover herb, turmeric, garden burnet root, and Crocus sativus. Component (3): Curcuma rhizome, Suberect spatholobus stem, wild turmeric, Sparganium rhizome, Luffa aegyptica Mill.

Abstract: Provided are a short circuit state analyzer to compare difference value when the AC excitation current is applied at a first frequency with a threshold value, to estimate a short circuit resistance from the difference value based on data indicating a relationship between the short circuit resistance and the difference value at the first frequency when the difference value is smaller than the threshold value, to cause an excitation power supply to apply the AC excitation current to the field windings at a second frequency lower than the first frequency when the difference value is equal to or greater than the threshold value, and to estimate the short circuit resistance from a difference value obtained by the AC excitation current at the second frequency based on data indicating a relationship between the short circuit resistance and the difference value at the second frequency.

Abstract: A short-circuit detection device for a rotating electric machine sets an order lower than a fundamental order of a slot harmonic wave as a threshold value, and reduces, among the plurality of frequency components, even-order frequency components having orders higher than the threshold value and odd-order frequency components, converts a plurality of frequency components output from the specific frequency component reduction unit into a voltage signal, generates a difference waveform of voltage signals respectively corresponding to adjacent magnetic poles, detects a short-circuit of a field winding based on a shape of the difference waveform, and estimates a short-circuit position of the field winding, and determines an estimation accuracy of the short-circuit position of the field winding based on a degree of symmetry of a waveform of a maximum wave with respect to a peak angle of the difference waveform serving as a center.

Abstract: The short-circuit detection device according to the present disclosure includes: a signal acquisition unit configured to acquire, from a magnetic flux detector configured to detect a magnetic flux generated in a gap between a rotor and a stator of a rotary electric machine, one detected signal based on the magnetic flux and set the one detected signal as a first detected signal and a second detected signal; a signal processing unit configured to perform frequency analysis on the first detected signal, and generate and decode a voltage signal simulating a voltage state assumed in a normal case; and a signal comparison unit configured to perform comparison between a decoded signal obtained through the decoding by the signal processing unit and the second detected signal transmitted from the signal acquisition unit, to detect a short-circuit in a field winding of the rotary electric machine.

Abstract: Provided are a short circuit state analyzer to compare difference value when the AC excitation current is applied at a first frequency with a threshold value, to estimate a short circuit resistance from the difference value based on data indicating a relationship between the short circuit resistance and the difference value at the first frequency when the difference value is smaller than the threshold value, to cause an excitation power supply to apply the AC excitation current to the field windings at a second frequency lower than the first frequency when the difference value is equal to or greater than the threshold value, and to estimate the short circuit resistance from a difference value obtained by the AC excitation current at the second frequency based on data indicating a relationship between the short circuit resistance and the difference value at the second frequency.

Abstract: Provided is a short-circuit detection device including: a signal acquisition unit configured to acquire, from a magnetic flux detector configured to detect a magnetic flux generated in an air gap between a rotor and a stator of a rotating electric machine, a detection signal corresponding to the magnetic flux; a signal processing unit configured to subject the detection signal acquired by the signal acquisition unit to filtering of removing at least one component of odd-order components included in the detection signal, to thereby generate a filtered signal being the detection signal subjected to the filtering; and a short-circuit detection unit configured to detect a short circuit of a field winding through use of the filtered signal generated by the signal processing unit.

Abstract: Provided is a short-circuit detection device configured to detect a short circuit of a field winding wound in a plurality of rotor slots in a rotor of a rotating electric machine, the short-circuit detection device including: a signal conversion unit configured to convert a detection signal in which a circumferential distribution of a magnetic flux of the rotor is detected into an energy equivalent signal corresponding to a circumferential distribution of magnetic energy of the rotor; and a short-circuit detection unit configured to detect a rotor slot in which the short circuit has occurred through use of the energy equivalent signal.

Abstract: An electric pump apparatus includes a motor, an inverter board, a coil support, a housing, and a pump portion driven by the motor. Coils include first end portions and second end portions drawn out from the coils, the first end portion and the second end portion defining both end portions of each of conducting wires of the coils. The inverter board is on a first axial side of the motor. The coil support includes a neutral point busbar that electrically connects the coils to one another. The coil support includes a first region including the first end portions arranged therein, each first end portion being directly connected to the inverter board, and a second region including the second end portions and the neutral point busbar arranged therein, each second end portion being connected to the neutral point busbar.

Abstract: A processing temperature TS by a rapid thermal processing furnace is 1250° C. or more and 1350° C. or less, and a cooling rate Rd from the processing temperature is in a range of 20° C./s or more and 150° C./s or less, and thermal processing is performed by adjusting the processing temperature TS and the cooling rate Rd within a range between the upper limit P=0.00207TS·Rd?2.52Rd+13.3 (Formula (A)) and the lower limit P=0.000548TS·Rd?0.605Rd?0.511 (Formula (B)) of an oxygen partial pressure P in a thermal processing atmosphere.

Abstract: A processing temperature TS by a rapid thermal processing furnace is 1250° C. or more and 1350° C. or less, and a cooling rate Rd from the processing temperature is in a range of 20° C./s or more and 150° C./s or less, and thermal processing is performed by adjusting the processing temperature TS and the cooling rate Rd within a range between the upper limit P=0.00207TS·Rd?2.52Rd+13.3 (Formula (A)) and the lower limit P=0.000548TS·Rd?0.605Rd?0.511 (Formula (B)) of an oxygen partial pressure P in a thermal processing atmosphere.

Abstract: A silicon wafer includes a denuded zone which is a surface layer and of which the density of vacancy-oxygen complexes which are complexes of vacancies and oxygen is less than 1.0×1012/cm3. An intermediate layer is disposed inwardly of the denuded zone so as to be adjacent to the denuded zone. The density of the vacancy-oxygen complexes in the intermediate layer increases gradually inwardly in the depth direction from the boundary with the denuded zone within a range of 1.0×1012/cm3 or over and less than 5.0×1012/cm3. The intermediate layer has a depth determined corresponding to the depth of the denuded zone. A bulk layer is disposed inwardly of the intermediate layer so as to be adjacent to the intermediate layer. The density of the vacancy-oxygen complexes in the bulk layer is 5.0×1012/cm3 or over.

Abstract: An electric pump apparatus includes a motor, an inverter board, a coil support, a housing, and a pump portion driven by the motor. Coils include first end portions and second end portions drawn out from the coils, the first end portion and the second end portion defining both end portions of each of conducting wires of the coils. The inverter board is on a first axial side of the motor. The coil support includes a neutral point busbar that electrically connects the coils to one another. The coil support includes a first region including the first end portions arranged therein, each first end portion being directly connected to the inverter board, and a second region including the second end portions and the neutral point busbar arranged therein, each second end portion being connected to the neutral point busbar.

Abstract: A first nitriding process step is performed in which a steel member is subjected to a nitriding process in a nitriding gas atmosphere having a nitriding potential with which a nitride compound layer having a ?? phase or an ? phase is generated, and thereafter a second nitriding process step is performed in which the steel member is subjected to a nitriding process in a nitriding gas atmosphere having a nitriding potential lower than the nitriding potential in the first nitriding process step, to thereby precipitate the ?? phase in the nitride compound layer. It is possible to generate the nitride compound layer having a desired phase mode uniformly all over a component to be treated and to manufacture a nitrided steel member high in pitting resistance and bending fatigue strength.

Abstract: A nitrided component has a chemical composition consisting of, by mass percent, C: 0.07-0.14%, Si: 0.10-0.30%, Mn: 0.4-1.0%, S: 0.005-0.030%, Cr: 1.0-1.5%, Mo: ?0.05% (including 0%), Al: 0.010% or more to less than 0.10%, V: 0.10-0.25%, optionally at least one element selected from Cu: ?0.30% and Ni: ?0.25%, [0.61Mn+1.11Cr+0.35Mo+0.47V?2.30], and the balance of Fe and impurities. P, N, Ti and O among the impurities are P: ?0.030%, N: ?0.008%, Ti: ?0.005%, and O: ?0.0030%. The nitrided composition is suitable for use as an automobile ring gear. The nitrided component has a surface hardness of 650-900 HV, core hardness being ?150 HV, effective case depth of ?0.15 mm, has excellent bending fatigue strength and surface fatigue strength although the content of Mo is as low as ?0.05% and has a small amount of expansion caused by nitriding.

Abstract: A silicon wafer includes a denuded zone which is a surface layer and of which the density of vacancy-oxygen complexes which are complexes of vacancies and oxygen is less than 1.0×1012/cm3. An intermediate layer is disposed inwardly of the denuded zone so as to be adjacent to the denuded zone. The density of the vacancy-oxygen complexes in the intermediate layer increases gradually inwardly in the depth direction from the boundary with the denuded zone within a range of 1.0×1012/cm3 or over and less than 5.0×1012/cm3. The intermediate layer has a depth determined corresponding to the depth of the denuded zone. A bulk layer is disposed inwardly of the intermediate layer so as to be adjacent to the intermediate layer. The density of the vacancy-oxygen complexes in the bulk layer is 5.0×1012/cm3 or over.

Abstract: A manufacturing method of a nitrided steel member and the nitrided steel member include: performing a nitriding treatment on a steel member made of a carbon steel or an alloy steel in an atmosphere of a nitriding treatment gas in which when the total pressure is set to 1, a partial pressure ratio of NH3 gas is set to 0.08 to 0.34, a partial pressure ratio of H2 gas is set to 0.54 to 0.82, and a partial pressure ratio of N2 gas is set to 0.09 to 0.18, at a flow speed of the nitriding treatment gas set to 1 m/s or more, at 500 to 620° C.; and thereby, forming an iron nitride compound layer having a thickness of 2 to 17 ?m on a surface of the steel member.

Abstract: A nitrided steel member including an iron nitride compound layer formed on a surface of a steel member having predetermined components, wherein: in X-ray diffraction peak intensity IFe4N (111) of a (111) crystal plane of Fe4N and X-ray diffraction peak intensity IFe3N (111) of a (111) crystal plane of Fe3N, which are measured on a surface of the nitrided steel member by X-ray diffraction, an intensity ratio expressed by IFe4N (111)/{IFe4N (111)+IFe3N (111)} is 0.5 or more; Vickers hardness of the iron nitride compound layer is 900 or less, Vickers hardness of a base metal immediately under the iron nitride compound layer is 700 or more, and a difference between the Vickers hardness of the iron nitride compound layer and the Vickers hardness of the base metal is 150 or less; and a thickness of the iron nitride compound layer is 2 to 17 ?m.

Abstract: A nitrided component has a chemical composition consisting of, by mass percent, C: 0.07-0.14%, Si: 0.10-0.30%, Mn: 0.4-1.0%, S: 0.005-0.030%, Cr: 1.0-1.5%, Mo: ?0.05% (including 0%), Al: 0.010% or more to less than 0.10%, V: 0.10-0.25%, optionally at least one element selected from Cu: ?0.30% and Ni: ?0.25%, [0.61Mn+1.11Cr+0.35Mo+0.47V?2.30], and the balance of Fe and impurities. P, N, Ti and O among the impurities are P: ?0.030%, N: ?0.008%, Ti: ?0.005%, and O: ?0.0030%. The nitrided composition is suitable for use as an automobile ring gear. The nitrided component has a surface hardness of 650-900 HV, core hardness being ?150 HV, effective case depth of ?0.15 mm, has excellent bending fatigue strength and surface fatigue strength although the content of Mo is as low as ?0.05% and has a small amount of expansion caused by nitriding.

Abstract: A manufacturing method of a nitrided steel member and the nitrided steel member include: performing a nitriding treatment on a steel member made of a carbon steel or an alloy steel in an atmosphere of a nitriding treatment gas in which when the total pressure is set to 1, a partial pressure ratio of NH3 gas is set to 0.08 to 0.34, a partial pressure ratio of H2 gas is set to 0.54 to 0.82, and a partial pressure ratio of N2 gas is set to 0.09 to 0.18, at a flow speed of the nitriding treatment gas set to 1 m/s or more, at 500 to 620° C.; and thereby, forming an iron nitride compound layer having a thickness of 2 to 17 ?m on a surface of the steel member.