Abstract: The invention provides polypeptides comprising inhibitor of apoptosis protein (IAP) family members, such as BmIAP initially derived from Bombyx mori BmN cells, and nucleic acids encoding them, and methods for making and using these compositions, including their use for inhibiting apoptosis.

Abstract: In a method of heat treating a wafer obtained by slicing a silicon single crystal ingot manufactured by the Czochralski method, a rapid heating/cooling heat treatment is carried out by setting a holding time at an ultimate temperature of 1200° C. or more and a melting point of silicon or less to be equal to or longer than one second and to be equal to or shorter than 60 seconds in a mixed gas atmosphere containing oxygen having an oxygen partial pressure of 1.0% or more and 20% or less and argon, and an oxide film having a thickness of 9.1 nm or less or 24.3 nm or more is thus formed on a surface of the silicon wafer.

Abstract: A method is provided capable of universally controlling the proximity gettering structure, the need for which can vary from manufacturer to manufacturer, by arbitrarily controlling an M-shaped distribution in a depth direction of a wafer BMD density after RTA in a nitrogen-containing atmosphere. The heat-treatment method is provided for forming a desired internal defect density distribution by controlling a nitrogen concentration distribution in a depth direction of the silicon wafer for heat-treatment, the method including heat-treating a predetermined silicon wafer used for manufacturing a silicon wafer having a denuded zone in the vicinity of the surface thereof.

Abstract: In a manufacturing method for a silicon wafer, a first heat treatment process is performed on the silicon wafer while introducing a first gas having an oxygen gas in an amount of 0.01 vol. % or more and 1.00 vol. % or less and a rare gas, and a second heat treatment process is performed while stopping introducing the first gas and introducing a second gas having an oxygen gas in an amount of 20 vol. % or more and 100 vol. % or less and a rare gas. In the first heat treatment process, the silicon wafer is rapidly heated to first temperature of 1300° C. or higher and a melting point of silicon or lower at a first heating rate, and kept at the first temperature. In the second heat treatment process, the silicon wafer is kept at the first temperature, and rapidly cooled from the first temperature at a first cooling rate.

Abstract: A silicon wafer produced from a silicon single crystal ingot grown by Czochralski process is subjected to rapid heating/cooling thermal process at a maximum temperature (T1) of 1300° C. or more, but less than 1380° C. in an oxidizing gas atmosphere having an oxygen partial pressure of 20% or more, but less than 100%. The silicon wafer according to the invention has, in a defect-free region (DZ layer) including at least a device active region of the silicon wafer, a high oxygen concentration region having a concentration of oxygen solid solution of 0.7×1018 atoms/cm3 or more and at the same time, the defect-free region contains interstitial silicon in supersaturated state.

Abstract: A stator of a rotating electric machine is obtained, in which material usage in a conductor connection section of a stator coil end and weight of the conductor connection section are reduced, so that vibration suppression is improved, in addition, thermal resistance between a loss occurrence portion and a cooled portion becomes smaller so that temperature rise is suppressed.

Abstract: The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the silicon crystal is no less than 1×1018 atoms/cm3 and the growth condition V/G falls within the epitaxial defect-free region ?2 whose lower limit line LN1 is the line indicating that the growth rate V gradually drops as the boron concentration increases. A silicon wafer is also produced wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so as to include at least the epitaxial defect region ?1, and both the heat treatment condition and the oxygen concentration of the silicon crystal are controlled so that no OSF nuclei grow to OSFs.

Abstract: The invention provides a method for separating semiconductor light-emitting devices formed on a substrate. In the method, a pulse laser beam having a pulse width less than 10 ps in a substrate is focused on the substrate, to thereby cause multi-photon absorption in the substrate. Through multi-photon absorption, a groove is formed through the pulse laser beam along a split line predetermined on a surface of the substrate, the groove being substantially continuous in the direction of the predetermined split line. In addition, internal structurally changed portions are formed through the pulse laser beam at a predetermined depth of the substrate on a predetermined split face, the structurally changed portions being discontinuous in the direction of the predetermined split line.

Abstract: A method is provided capable of universally controlling the proximity gettering structure, the need for which can vary from manufacturer to manufacturer, by arbitrarily controlling an M-shaped distribution in a depth direction of a wafer BMD density after RTA in a nitrogen-containing atmosphere. The heat-treatment method is provided for forming a desired internal defect density distribution by controlling a nitrogen concentration distribution in a depth direction of the silicon wafer for heat-treatment, the method including heat-treating a predetermined silicon wafer used for manufacturing a silicon wafer having a denuded zone in the vicinity of the surface thereof.

Abstract: The invention provides polypeptides comprising inhibitor of apoptosis protein (IAP) family members, such as BmIAP initially derived from Bombyx mori BmN cells, and nucleic acids encoding them, and methods for making and using these compositions, including their use for inhibiting apoptosis.

Abstract: An epitaxial wafer and a high-temperature heat treatment wafer having an excellent gettering capability are obtained by performing epitaxial growth or a high-temperature heat treatment. A relational equation relating the density to the radius of an oxygen precipitate introduced in a silicon crystal doped with nitrogen at the time of crystal growth can be derived from the nitrogen concentration and the cooling rate around 1100° C. during crystal growth, and the oxygen precipitate density to be obtained after a heat treatment can be predicted from the derived relational equation relating the oxygen precipitate density to the radius, the oxygen concentration, and the wafer heat treatment process. Also, an epitaxially grown wafer and a high-temperature annealed wafer whose oxygen precipitate density has been controlled to an appropriate density are obtained, using conditions predicted by the method.

Abstract: A process for producing a single-crystal semiconductor and an apparatus therefor. A single-crystal semiconductor of large diameter and large weight can be lifted with the use of existing equipment not having any substantial change thereto while not influencing the oxygen concentration of single-crystal semiconductor and the temperature of melt and while not unduly raising the temperature of seed crystal. In particular, the relationship (L1, L2, L3) between the allowable temperature difference (?T) and the diameter (D) of seed crystal (14) is preset so that the temperature difference between the seed crystal (14) at the time the seed crystal (14) is immersed in the melt and the melt (5) falls within the allowable temperature difference (?T) at which dislocations are not introduced into the seed crystal (14). In accordance with the relationship (L1, L2, L3), the allowable temperature difference (?T) corresponding to the diameter (D) of seed crystal (14) to be immersed in the melt is determined.

Abstract: The invention provides polypeptides comprising inhibitor of apoptosis protein (IAP) family members, such as BmIAP initially derived from Bombyx mori BmN cells, and nucleic acids encoding them, and methods for making and using these compositions, including their use for inhibiting apoptosis.

Abstract: A quartz resonator blank vibrating at a predetermined resonance frequency with driving power applied to at least a principal surface, wherein, defining the electrical axis, the mechanical axis, and the optical axis of quartz as X-axis, Y-axis, and Z-axis, respectively, the principal surface includes a side parallel to an X?-axis defined by rotating the X-axis clockwise around the Z-axis as an angle ? no smaller than 7 degrees and no greater than 17.3 degrees, and a side parallel to a Z?-axis defined by rotating the Z-axis clockwise around the X?-axis as an angle ? no smaller than 34.3 degrees and no greater than 35.25 degrees.

Abstract: A motor/generator system is provided in which a casing (111) of a motor/generator (MG) is connected to a casing (15) of a displacement type expander of a Rankine cycle system, and a rotor (117) of the motor/generator (MG) is supported on a shaft end of an output shaft (32) extending from the expander to the interior of the motor/generator casing (111). Providing communication between an internal space of the expander casing (15), where steam that has leaked from an expansion chamber of the expander is present, and an internal space of the motor/generator casing (111) via a through hole (15a) enables the motor/generator (MG), which reaches a high temperature due to generation of heat in a coil (124), to be cooled by leaked steam that has entered via the through hole (15a), and covering the low temperature expander casing (15) with the high temperature motor/generator casing (111) enables the escape of heat from the expander casing (15) to be minimized, thereby enhancing the efficiency of the expander.

Abstract: Evaporator temperature control means (U) that, in order to make the temperature of steam generated by heating water using exhaust gas of an engine coincide with a target temperature, controls the amount of water supplied to the evaporator based on the flow rate of the exhaust gas, the temperature of the exhaust gas, the temperature of the water, and the temperature of the steam. Calculating an exhaust gas flow rate (Gmix) based on a fuel injection quantity, an air/fuel ratio, and a rotational speed of the engine improves the precision and the responsiveness of the calculation. Controlling the amount of water supplied to the evaporator based on this exhaust gas flow rate (Gmix) therefore improves the accuracy with which the steam temperature is controlled so as to make it coincide with the target temperature.

Abstract: The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the silicon crystal is no less than 1×1018 atoms/cm3 and the growth condition V/G falls within the epitaxial defect-free region ?2 whose lower limit line LN1 is the line indicating that the growth rate V gradually drops as the boron concentration increases. Further, the present invention is to produce a silicon wafer wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so as to include at least the epitaxial defect region ?1, and the heat treatment condition of the silicon crystal and the oxygen concentration in the silicon crystal are controlled so that no OSF nuclei grow to OSFs.

Abstract: A process for producing a single-crystal semiconductor and an apparatus therefor. A single-crystal semiconductor of large diameter and large weight can be lifted with the use of existing equipment not having any substantial change thereto while not influencing the oxygen concentration of single-crystal semiconductor and the temperature of melt and while not unduly raising the temperature of seed crystal. In particular, the relationship (L1, L2, L3) between the allowable temperature difference (?T) and the diameter (D) of seed crystal (14) is preset so that the temperature difference between the seed crystal (14) at the time the seed crystal (14) is immersed in the melt and the melt (5) falls within the allowable temperature difference (?T) at which dislocations are not introduced into the seed crystal (14). In accordance with the relationship (L1, L2, L3), the allowable temperature difference (?T) corresponding to the diameter (D) of seed crystal (14) to be immersed in the melt is determined.

Abstract: A method for producing a silicon ingot having no defect over a wide range of region with stability and good reproducibility, wherein when a silicon single crystal (11) is pulled up form a silicon melt (13), the shape of a solid-liquid interface (14) which a boundary between the silicon melt (13) and the silicon single crystal (11) and the temperature distribution on the side face (11b) of a single crystal under being pulled up are appropriately controlled.

Abstract: Evaporator temperature control means (U) that, in order to make the temperature of steam generated by heating water using exhaust gas of an engine coincide with a target temperature, controls the amount of water supplied to the evaporator based on the flow rate of the exhaust gas, the temperature of the exhaust gas, the temperature of the water, and the temperature of the steam. Calculating an exhaust gas flow rate (Gmix) based on a fuel injection quantity, an air/fuel ratio, and a rotational speed of the engine improves the precision and the responsiveness of the calculation. Controlling the amount of water supplied to the evaporator based on this exhaust gas flow rate (Gmix) therefore improves the accuracy with which the steam temperature is controlled so as to make it coincide with the target temperature.