Abstract: When performing processing on a substrate in a plasma-free atmosphere, the substrate is reliably attracted to perform processing with high uniformity in the plane of the substrate. An apparatus includes a DC power source and a processing gas supply part. The DC power source has a positive electrode connected to one of an electrode of an electrostatic chuck and a conductive member, and a negative electrode connected to the other of the electrode and the conductive member, and attracts the substrate to a dielectric layer of the electrostatic chuck by electrostatic attraction force generated by applying voltage between the conductive member located at a processing position and the electrode in a state in which plasma is not formed inside a processing container. The processing gas supply part performs processing by supplying a processing gas to the substrate in a state in which the substrate is attracted to the dielectric layer.

Abstract: In a hard mask formed on a target film formed on a substrate, a first film having a stress in a first direction and a second film having a stress in a second direction opposite to the first direction are alternately stacked one or more times.

Abstract: An etching method includes: adsorbing an adsorbate based on a processing gas containing BCl3 gas onto a target object, which serves as a to-be-etched object, by: supplying H2 gas and the processing gas to a process space in which the target object is disposed; and applying power of a predetermined frequency to the process space, while supplying the H2 gas is stopped, to generate plasma in the process space; and etching the target object by generating plasma of a rare gas in the process space to activate the adsorbate.

Abstract: A first aspect of the present disclosure provides a ruthenium wiring manufacturing method of manufacturing a ruthenium wiring by filling a recess, with respect to a substrate including a predetermined film having the recess formed in a surface thereof. The method includes: embedding a first ruthenium film in the recess by forming the first ruthenium film by CVD using a ruthenium raw material gas; forming an additional layer by forming a second ruthenium film on the first ruthenium film embedded in the recess by CVD using the ruthenium raw material gas at a film forming rate higher than that at a time of embedding; and flattening the second ruthenium film and the first ruthenium film by removing the second ruthenium film and the first ruthenium film on the substrate surface by CMP.

Abstract: There is provided a method of performing a surface processing on a substrate having a metal layer formed on a bottom portion of a recess formed in an insulating film, the method including: supplying a halogen-containing gas into a processing chamber in which the substrate is loaded; and removing a metal oxide from the bottom portion of the recess using the halogen-containing gas.

Abstract: An embedding method includes: removing a metal oxide film at a surface of a metal layer from a substrate that includes the metal layer on a bottom of a recess formed in an insulating layer; covering the surface of the metal layer by embedding ruthenium in the recess from the bottom of the recess; forming a ruthenium liner film in the recess; and further embedding ruthenium in the recess in which the liner film is formed.

Abstract: An embedding method includes: supplying a ruthenium-containing gas to a process chamber; and embedding ruthenium in a recess, which is formed in an insulating layer formed on a substrate, starting from a bottom portion of the recess using the ruthenium-containing gas, the bottom portion of the recess having a metal layer.

Abstract: There is provided a ruthenium wiring, including: a TiON film formed as a base film in a recess formed in a predetermined film on a surface of a substrate; and a ruthenium film formed on the TiON film so as to fill the recess.

Abstract: A method of selectively forming a thin film on a substrate to be processed in which a conductive film and an insulating film are exposed to a surface of the substrate includes: selectively forming a first Ru film only on a first surface, which is an exposed surface of the conductive film and formed of one of Ru, RuO2, Pt, Pd, CuO, and CuO2, using an Ru(EtCp)2 gas and an O2 gas; and selectively forming a first SiO2-containing insulating film only on a second surface, which is an exposed surface of the insulating film has OH groups, by performing one or more times a process of supplying a TMA gas to the substrate to adsorb TMA only to the second surface and a process of forming an SiO2 film only on a surface of the adsorbed TMA using a silanol group-containing silicon raw material and an oxidizing agent.

Abstract: A TiON film forming method is provided. A cycle of forming a unit TiN film at a predetermined processing temperature by alternately supplying a Ti-containing gas and a nitriding gas into the processing chamber accommodating a target substrate and oxidizing the unit TiN film by supplying an oxidizing agent into the processing chamber is repeated multiple times. In an initial stage of the film formation, a cycle of repeating the alternate supply of the Ti-containing gas and the nitriding gas X1 times and supplying the oxidizing agent is repeated Y1 times. In a later stage of the film formation, a cycle of repeating the alternate supply of the Ti-containing gas and the nitriding gas X2 times and supplying the oxidizing agent is repeated Y2 times until a desired film thickness is obtained. The number of repetition X1 is set to be greater than the number of repetition X2.

Abstract: An etching method includes: adsorbing an adsorbate based on a processing gas containing BCl3 gas onto a target object, which serves as a to-be-etched object, by: supplying H2 gas and the processing gas to a process space in which the target object is disposed; and applying power of a predetermined frequency to the process space, while supplying the H2 gas is stopped, to generate plasma in the process space; and etching the target object by generating plasma of a rare gas in the process space to activate the adsorbate.

Abstract: A removal method is provided for selectively removing a plurality of types of metal oxide films in a plurality of recesses formed in a substrate that is arranged in a processing chamber. The removal method includes repeatedly performing process steps of exposing the plurality of types of metal oxide films to BCl3 gas or a BCl3 gas plasma generated by introducing BCl3 gas, stopping introduction of the BCl3 gas and performing a purge process, exposing the plurality of types of metal oxide films and/or a plurality of types of metal films underneath the metal oxide films to one or more different plasmas, at least one of which is generated by introducing a single gas of an inert gas, and stopping introduction of the inert gas and performing the purge process.

Abstract: A removal method is provided for selectively removing a plurality of types of metal oxide films in a plurality of recesses formed in a substrate that is arranged in a processing chamber. The removal method includes repeatedly performing process steps of exposing the plurality of types of metal oxide films to BCl3 gas or a BCl3 gas plasma generated by introducing BCl3 gas, stopping introduction of the BCl3 gas and performing a purge process, exposing the plurality of types of metal oxide films and/or a plurality of types of metal films underneath the metal oxide films to one or more different plasmas, at least one of which is generated by introducing a single gas of an inert gas, and stopping introduction of the inert gas and performing the purge process.

Abstract: A method of selectively forming a thin film on a substrate to be processed in which a conductive film and an insulating film are exposed to a surface of the substrate includes: selectively forming a first Ru film only on a first surface, which is an exposed surface of the conductive film and formed of one of Ru, RuO2, Pt, Pd, CuO, and CuO2, using an Ru(EtCp)2 gas and an O2 gas; and selectively forming a first SiO2-containing insulating film only on a second surface, which is an exposed surface of the insulating film has OH groups, by performing one or more times a process of supplying a TMA gas to the substrate to adsorb TMA only to the second surface and a process of forming an SiO2 film only on a surface of the adsorbed TMA using a silanol group-containing silicon raw material and an oxidizing agent.

Abstract: A lower electrode is made of a TiN-based material and provided at a base of a dielectric film in a DRAM capacitor. The lower electrode includes first TiON films provided at opposite outer sides, the first TiON films having a relatively low oxygen concentration, and a second TiON film provided between the first TiON films, the second TiON film having a relatively high oxygen concentration.

Abstract: In a Cu wiring manufacturing method, a MnOx film which becomes a self-formed barrier film by reaction with an interlayer insulating film of a substrate is formed on a surface of a recess formed in the interlayer insulating film by ALD. A hydrogen radical process is performed on a surface of the MnOx film to reduce the surface of the MnOx film. A Ru film is formed by CVD on the surface of the MnOx film which has been reduced by the hydrogen radical process. A Cu-based film is formed on the Ru film by PVD to be filled in the recess. When the Ru film is formed, a film-formation condition of the MnOx film and a condition of the hydrogen radical process are set such that nucleus formation is facilitated and the Ru film is formed in a state where a surface smoothness is high.

Abstract: A first aspect of the present disclosure provides a ruthenium wiring manufacturing method of manufacturing a ruthenium wiring by filling a recess, with respect to a substrate including a predetermined film having the recess formed in a surface thereof. The method includes: embedding a first ruthenium film in the recess by forming the first ruthenium film by CVD using a ruthenium raw material gas; forming an additional layer by forming a second ruthenium film on the first ruthenium film embedded in the recess by CVD using the ruthenium raw material gas at a film forming rate higher than that at a time of embedding; and flattening the second ruthenium film and the first ruthenium film by removing the second ruthenium film and the first ruthenium film on the substrate surface by CMP.

Abstract: A method is provided for at least partially filling a feature in a substrate. The method includes providing a substrate containing a feature, depositing a ruthenium (Ru) metal layer to at least partially fill the feature, and heat-treating the substrate to reflow the Ru metal layer in the feature.

Abstract: A TiN-based film includes TiON films having an oxygen content of 50% or above and TiN films which are laminated alternately on a substrate. In a TiN-based film forming method, a TiON film having an oxygen content of 50 at % or above and a TiN film are alternately formed on a substrate.

Abstract: A metal nanodot formation method includes: loading a target substrate inside a processing container of a processing apparatus; depositing a plurality of metal nanodots on a surface of the target substrate by a sequence of: supplying a CO gas from a CO gas container which stores the CO gas into a raw material container which stores a metal carbonyl compound; generating gas of the metal carbonyl compound; introducing the generated gas of the metal carbonyl compound as a mixture gas containing the CO gas into the processing container; and decomposing the metal carbonyl compound on the target substrate, and directly introducing the CO gas from the CO gas container into the processing container, in a state where the introduction of the mixture gas into the processing container is stopped, such that the CO gas is brought into contact with the metal nanodots on the surface of the target substrate.