Patents by Inventor Tadaomi Daibou
Tadaomi Daibou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11985907Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element including first and second magnetic layers each having a fixed magnetization direction, a third magnetic layer provided between the first and second magnetic layers, and having a variable magnetization direction, a first nonmagnetic layer between the first and third magnetic layers, and a second nonmagnetic layer between the second and third magnetic layers, and a switching element connected in series to the magnetoresistance effect element, changing from an electrically nonconductive state to an electrically conductive state when a voltage applied between two terminals is higher than or equal to a threshold voltage.Type: GrantFiled: March 15, 2021Date of Patent: May 14, 2024Assignee: Kioxia CorporationInventors: Shogo Itai, Tadaomi Daibou, Yuichi Ito, Katsuyoshi Komatsu
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Patent number: 11963459Abstract: A switching device according to an embodiment includes a switching layer disposed between a first electrode and a second electrode. The switching layer contains a material containing a first cation element Z, Te, and N. This material contains at least 5 atomic % or more of each of Z, Te, and N, and when an atomic ratio of Te is X, an atomic ratio of N is Y, an atomic ratio of Z is W, a ratio of Z2Te3 to ZN on a straight line connecting a compound of the first cation element Z with tellurium and nitride of the first cation element Z in a ternary phase diagram of Z, Te, and N is A, and a change in an N content from the Z2Te3—ZN line is B, the material has a composition satisfying X=1.2 (1?A) (0.5+B), Y=A (0.5+B), and W=1?X?Y, where ?0.06?B?0.06 is satisfied when ?>A and ¾<A, and ?0.06?B and Y?0.45 are satisfied when ??A?¾.Type: GrantFiled: September 8, 2021Date of Patent: April 16, 2024Assignee: Kioxia CorporationInventors: Hiroshi Takehira, Katsuyoshi Komatsu, Tadaomi Daibou, Hiroki Kawai, Yuichi Ito
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Publication number: 20240114811Abstract: According to one embodiment, a nonvolatile semiconductor memory includes a first electrode and a second electrode spaced from the first electrode. A memory element and a switching element are disposed between the first electrode and the second electrode. The switching element includes a tunnel insulating film enabling carrier tunneling, and the tunnel insulating film includes yttrium and oxygen and at least one of tantalum, titanium, and zirconium Ti, and Zr.Type: ApplicationFiled: September 1, 2023Publication date: April 4, 2024Inventors: Jieqiong ZHANG, Katsuyoshi KOMATSU, Tadaomi DAIBOU, Yosuke MATSUSHIMA
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Patent number: 11678593Abstract: A semiconductor memory device includes a first electrode and a second electrode, a phase change layer disposed between the first electrode and the second electrode, and a first layer disposed between the first electrode and the phase change layer. The phase change layer contains at least one of germanium (Ge), antimony (Sb), and tellurium (Te). The first layer contains aluminum (Al) and antimony (Sb), or tellurium (Te) and at least one of zinc (Zn), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).Type: GrantFiled: August 12, 2021Date of Patent: June 13, 2023Assignee: Kioxia CorporationInventors: Katsuyoshi Komatsu, Takeshi Iwasaki, Tadaomi Daibou, Hiroki Kawai
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Publication number: 20230085722Abstract: A semiconductor storage device including a phase change memory film having a composition containing at least Ge, Sb, Te, and Se, and containing Se as a design composition ratio to Te in a composition ratio showing a phase change memory property with at least three elements Ge, Sb, and Te. The composition ratio of Se is 33.6 atom % or less.Type: ApplicationFiled: March 4, 2022Publication date: March 23, 2023Inventors: Jieqiong ZHANG, Katsuyoshi KOMATSU, Tadaomi DAIBOU, Takeshi IWASAKI, Hiroki TOKUHIRA, Hiroki KAWAI, Hiroshi TAKEHIRA
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Publication number: 20230085635Abstract: A resistance change device of an embodiment includes a first electrode, a second electrode, and a layer disposed between the first electrode and the second electrode and containing a resistance change material. In the resistance change device of the embodiment, the resistance change material contains: a first element including Sb and Te; a second element including at least one element selected from the group consisting of Ge and In; a third element including at least one element selected from the group consisting of Si, N, B, C, Al, and Ti; and a fourth element including at least one element selected from the group consisting of Sc, Y, La, Gd, Zr, and Hf.Type: ApplicationFiled: March 7, 2022Publication date: March 23, 2023Applicant: Kioxia CorporationInventors: Hiroki KAWAI, Kasumi YASUDA, Hiroki TOKUHIRA, Kazuhiro KATONO, Akifumi GAWASE, Katsuyoshi KOMATSU, Tadaomi DAIBOU
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Patent number: 11600772Abstract: A resistance variable device of an embodiment includes a stack arranged between a first electrode and a second electrode and including a resistance variable layer and a chalcogen-containing layer. The chalcogen-containing layer contains a material having a composition represented by a general formula: C1xC2yAz, where C1 is at least one element selected from Sc, Y, Zr, and Hf, C2 is at least one element selected from C, Si, Ge, B, Al, Ga, and In, A is at least one element selected from S, Se, and Te, and x, y, and z are numbers representing atomic ratios satisfying 0<x<1, 0<y<1, 0<z<1, and x+y+z=1, and when an oxidation number of the element C1 is set to a, and an oxidation number of the element C2 is set to b, the atomic ratio x of the element C1 satisfies x?(3?(3+b)×y?z)/(3+a).Type: GrantFiled: September 8, 2020Date of Patent: March 7, 2023Assignee: Kioxia CorporationInventors: Hiroki Kawai, Katsuyoshi Komatsu, Tadaomi Daibou, Hiroki Tokuhira, Masatoshi Yoshikawa, Yuichi Ito
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Patent number: 11502125Abstract: A magnetoresistive memory device according to one embodiment includes: first and second layer stacks, each of which includes: a first ferromagnetic layer having a magnetization directed in a first direction; a non-magnetic first conductive layer above the first ferromagnetic layer, a second ferromagnetic layer provided above the first conductive layer and having a magnetization directed in a second direction different from the first direction, a first insulating layer on an upper surface of the second ferromagnetic layer, and a third ferromagnetic layer above the first insulating layer. The second ferromagnetic layer of the second layer stack is thicker than the second ferromagnetic layer of the first layer stack.Type: GrantFiled: March 12, 2020Date of Patent: November 15, 2022Assignee: KIOXIA CORPORATIONInventors: Masaru Toko, Tadaomi Daibou, Junichi Ito, Taichi Igarashi, Tadashi Kai
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Publication number: 20220302383Abstract: According to one embodiment, a selector device includes a first electrode, a second electrode, and a selector layer disposed between the first electrode and the second electrode. At least one of the first electrode or the second electrode includes a stacked film. The stacked film includes a first layer including a first material with a first Debye temperature, and a second layer in contact with the first layer and including a second material with a second Debye temperature lower than the first Debye temperature. A ratio of the first Debye temperature to the second Debye temperature is equal to or greater than 5.Type: ApplicationFiled: August 30, 2021Publication date: September 22, 2022Applicant: Kioxia CorporationInventors: Jieqiong ZHANG, Masatoshi YOSHIKAWA, Tadaomi DAIBOU
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Publication number: 20220238801Abstract: A semiconductor memory device includes a first electrode and a second electrode, a phase change layer disposed between the first electrode and the second electrode, and a first layer disposed between the first electrode and the phase change layer. The phase change layer contains at least one of germanium (Ge), antimony (Sb), and tellurium (Te). The first layer contains aluminum (Al) and antimony (Sb), or tellurium (Te) and at least one of zinc (Zn), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).Type: ApplicationFiled: August 12, 2021Publication date: July 28, 2022Applicant: Kioxia CorporationInventors: Katsuyoshi KOMATSU, Takeshi IWASAKI, Tadaomi DAIBOU, Hiroki KAWAI
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Patent number: 11355694Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and containing magnesium (Mg) and oxygen (O). The nonmagnetic layer further contains an additive element selected from fluorine (F), sulfur (S), hydrogen (H) and lithium (Li).Type: GrantFiled: September 13, 2019Date of Patent: June 7, 2022Assignee: KIOXIA CORPORATIONInventors: Tadaomi Daibou, Yasushi Nakasaki, Tadashi Kai, Hiroki Kawai, Takamitsu Ishihara, Junichi Ito
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Patent number: 11316097Abstract: According to one embodiment, a memory device includes a first wiring extending in a first direction, and a second wiring extending in a second direction that intersects the first direction. A memory cell is between the first wiring and the second wiring and includes a resistive memory element and a switching element that are connected in series between the first wiring and the second wiring. An insulating region surrounds side surfaces of the memory cell. The insulating region includes a first insulating part adjacent to a side surface of the resistive memory element and a second insulating part adjacent to a side surface of the switching element. The second insulating part has a higher thermal conductivity than the first insulating part.Type: GrantFiled: August 26, 2020Date of Patent: April 26, 2022Assignee: KIOXIA CORPORATIONInventors: Taichi Igarashi, Tadaomi Daibou, Junichi Ito, Tadashi Kai, Shogo Itai, Toshiyuki Enda
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Publication number: 20220093851Abstract: A switching device according to an embodiment includes a switching layer disposed between a first electrode and a second electrode. The switching layer contains a material containing a first cation element Z, Te, and N. This material contains at least 5 atomic % or more of each of Z, Te, and N, and when an atomic ratio of Te is X, an atomic ratio of N is Y, an atomic ratio of Z is W, a ratio of Z2Te3 to ZN on a straight line connecting a compound of the first cation element Z with tellurium and nitride of the first cation element Z in a ternary phase diagram of Z, Te, and N is A, and a change in an N content from the Z2Te3-ZN line is B, the material has a composition satisfying X=1.2 (1?A) (0.5+B), Y=A (0.5+B), and W=1?X?Y, where ?0.06?B?0.06 is satisfied when ?>A and ¾<A, and ?0.06?B and Y?0.45 are satisfied when ??A?¾.Type: ApplicationFiled: September 8, 2021Publication date: March 24, 2022Applicant: Kioxia CorporationInventors: Hiroshi TAKEHIRA, Katsuyoshi KOMATSU, Tadaomi DAIBOU, Hiroki KAWAI, Yuichi ITO
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Publication number: 20220085277Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element including first and second magnetic layers each having a fixed magnetization direction, a third magnetic layer provided between the first and second magnetic layers, and having a variable magnetization direction, a first nonmagnetic layer between the first and third magnetic layers, and a second nonmagnetic layer between the second and third magnetic layers, and a switching element connected in series to the magnetoresistance effect element, changing from an electrically nonconductive state to an electrically conductive state when a voltage applied between two terminals is higher than or equal to a threshold voltage.Type: ApplicationFiled: March 15, 2021Publication date: March 17, 2022Applicant: Kioxia CorporationInventors: Shogo ITAI, Tadaomi DAIBOU, Yuichi ITO, Katsuyoshi KOMATSU
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Publication number: 20220083849Abstract: A switching circuit includes: a first circuit including a first capacitor, a first resistor, and a first selector above the first capacitor and resistor; and a second circuit including a second capacitor, a second resistor, and a second selector above the second capacitor and resistor. The capacitors have: a first and a second lower electrode on a semiconductor substrate; a dielectric layer on the lower electrodes; a resistive layer on the dielectric layer to form the resistors with the dielectric layer; a first upper electrode on the resistive layer opposite to the first lower electrode to form the first capacitor with the first lower electrode; and a second upper electrode on the resistive layer opposite to the second lower electrode to form the second capacitor with the second lower electrode.Type: ApplicationFiled: August 30, 2021Publication date: March 17, 2022Applicant: Kioxia CorporationInventors: Katsuyoshi KOMATSU, Kenichi MUROOKA, Tadaomi DAIBOU, Yuichi ITO
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Publication number: 20220013579Abstract: According to one embodiment, a magnetic memory device including a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and containing magnesium (Mg) and oxygen (O). The nonmagnetic layer further contains a first additive element and a second additive element, the first additive element is at least one element selected from sulfur (S), gallium (Ga), aluminum (Al), titanium (Ti), vanadium (V), hydrogen (H), fluorine (F), manganese (Mg), lithium (Li), nitrogen (N) and magnesium (Mg), and the second additive element is lithium (Li).Type: ApplicationFiled: September 23, 2021Publication date: January 13, 2022Applicant: Kioxia CorporationInventors: Tadaomi DAIBOU, Yasushi NAKASAKI, Tadashi KAI, Hiroki KAWAI, Takamitsu ISHIHARA, Junichi ITO
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Patent number: 11133456Abstract: According to one embodiment, a magnetic storage device includes: a magnetoresistive effect element including a non-magnet, and a stacked structure on the non-magnet, the stacked structure including: a first ferromagnet on the non-magnet; an anti-ferromagnet being exchange-coupled with the first ferromagnet; and a second ferromagnet between the first ferromagnet and the anti-ferromagnet. The stacked structure is configured to: have a first resistance value in response to a first current flowing through the stacked structure in a first direction, and have a second resistance value different from the first resistance value in response to a second current flowing through the stacked structure in a second direction opposite to the first direction.Type: GrantFiled: March 13, 2019Date of Patent: September 28, 2021Assignee: TOSHIBA MEMORY CORPORATIONInventors: Takeshi Iwasaki, Akiyuki Murayama, Tadashi Kai, Tadaomi Daibou, Masaki Endo, Shumpei Omine, Taichi Igarashi, Junichi Ito
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Publication number: 20210296568Abstract: According to one embodiment, a memory device includes a first wiring extending in a first direction, and a second wiring extending in a second direction that intersects the first direction. A memory cell is between the first wiring and the second wiring and includes a resistive memory element and a switching element that are connected in series between the first wiring and the second wiring. An insulating region surrounds side surfaces of the memory cell. The insulating region includes a first insulating part adjacent to a side surface of the resistive memory element and a second insulating part adjacent to a side surface of the switching element. The second insulating part has a higher thermal conductivity than the first insulating part.Type: ApplicationFiled: August 26, 2020Publication date: September 23, 2021Inventors: Taichi IGARASHI, Tadaomi DAIBOU, Junichi ITO, Tadashi KAI, Shogo ITAI, Toshiyuki ENDA
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Publication number: 20210296585Abstract: A switching device in an embodiment includes: a first electrode; a second electrode, and a switching layer disposed between the first electrode and the second electrode. The switching layer is made of a material containing hafnium nitride. Otherwise, the switching layer is made of a material containing bismuth and at least one selected from the group consisting of silicon oxide, aluminum oxide, zirconium oxide, and gallium oxide, or a material containing at least one selected from the group consisting of bismuth oxide, bismuth nitride, bismuth boride, and bismuth sulfide.Type: ApplicationFiled: September 14, 2020Publication date: September 23, 2021Applicant: Kioxia CorporationInventors: Tadaomi DAIBOU, Hiroki KAWAI, Katsuyoshi KOMATSU, Weidong LI, Shogo ITAI, Kouji MATSUO
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Publication number: 20210202838Abstract: A resistance variable device of an embodiment includes a stack arranged between a first electrode and a second electrode and including a resistance variable layer and a chalcogen-containing layer. The chalcogen-containing layer contains a material having a composition represented by a general formula: C1xC2yAz, where C1 is at least one element selected from Sc, Y, Zr, and Hf, C2 is at least one element selected from C, Si, Ge, B, Al, Ga, and In, A is at least one element selected from S, Se, and Te, and x, y, and z are numbers representing atomic ratios satisfying 0<x<1, 0<y<1, 0<z<1, and x+y+z=1, and when an oxidation number of the element C1 is set to a, and an oxidation number of the element C2 is set to b, the atomic ratio x of the element C2 satisfies x?(3?(3+b)×y?z)/(3+a).Type: ApplicationFiled: September 8, 2020Publication date: July 1, 2021Applicant: Kioxia CorporationInventors: Hiroki KAWAI, Katsuyoshi KOMATSU, Tadaomi DAIBOU, Hiroki TOKUHIRA, Masatoshi YOSHIKAWA, Yuichi ITO