Abstract: According to one embodiment, a storage device includes a magnetoresistive effect element comprising a nonmagnetic layer and a stacked body on the nonmagnetic layer. The stacked body includes a first ferromagnetic layer on the nonmagnetic layer, a second ferromagnetic layer exchange-coupled with the first ferromagnetic layer, and a magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer. The magnetic layer includes a magnetic material and at least one compound selected from among a carbide, a nitride, and a boride.

Abstract: A magnetoresistive memory device according to one embodiment includes: first and second layer stacks, each of which includes: a first ferromagnetic layer having a magnetization directed in a first direction; a non-magnetic first conductive layer above the first ferromagnetic layer, a second ferromagnetic layer provided above the first conductive layer and having a magnetization directed in a second direction different from the first direction, a first insulating layer on an upper surface of the second ferromagnetic layer, and a third ferromagnetic layer above the first insulating layer. The second ferromagnetic layer of the second layer stack is thicker than the second ferromagnetic layer of the first layer stack.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and containing magnesium (Mg) and oxygen (O). The nonmagnetic layer further contains an additive element selected from fluorine (F), sulfur (S), hydrogen (H) and lithium (Li).

Abstract: A magnetoresistive element according to an embodiment includes: a first layer; a first magnetic layer; a second magnetic layer disposed between the first layer and the first magnetic layer; a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and an insulating layer disposed at least on side surfaces of the nonmagnetic layer, the first layer including: at least one element selected from a first group consisting of Hf, Zr, Al, Cr, and Mg; and at least one element selected from a second group consisting of Ta, W, Mo, Nb, Si, Ge, Be, Li, Sn, Sb, and P, and the insulating layer including at least one element selected from the first group.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including first and second magnetic layers having variable and fixed magnetization directions, respectively, and a nonmagnetic layer provided between the first and second magnetic layers and containing a first compound containing first cationic and anionic elements, and a predetermined-material layer provided around side surfaces of the stacked structure and containing a second compound containing second added cationic and second added anionic elements. An absolute value of a valence number (ionic valency) of the second added cationic element is less than that of the first cationic element, and an absolute value of a valence number (ionic valency) of the second added anionic element is less than that of the first anionic element.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including first and second magnetic layers having variable and fixed magnetization directions, respectively, and a nonmagnetic layer provided between the first and second magnetic layers and containing a first compound containing first cationic and anionic elements, and a predetermined-material layer provided around side surfaces of the stacked structure and containing a second compound containing second added cationic and second added anionic elements. An absolute value of a valence number (ionic valency) of the second added cationic element is less than that of the first cationic element, and an absolute value of a valence number (ionic valency) of the second added anionic element is less than that of the first anionic element.

Abstract: According to one embodiment, a storage device includes a magnetoresistive effect element comprising a nonmagnetic layer and a stacked body on the nonmagnetic layer. The stacked body includes a first ferromagnetic layer on the nonmagnetic layer, a second ferromagnetic layer exchange-coupled with the first ferromagnetic layer, and a magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer. The magnetic layer includes a magnetic material and at least one compound selected from among a carbide, a nitride, and a boride.

Abstract: According to one embodiment, a magnetic storage device includes: a magnetoresistive effect element including a non-magnet, and a stacked structure on the non-magnet, the stacked structure including: a first ferromagnet on the non-magnet; an anti-ferromagnet being exchange-coupled with the first ferromagnet; and a second ferromagnet between the first ferromagnet and the anti-ferromagnet. The stacked structure is configured to: have a first resistance value in response to a first current flowing through the stacked structure in a first direction, and have a second resistance value different from the first resistance value in response to a second current flowing through the stacked structure in a second direction opposite to the first direction.

Abstract: According to one embodiment, a magnetic memory device includes a conductive underlayer having an amorphous structure and containing at least one first predetermined element selected from molybdenum (Mo), magnesium (Mg), rhenium (Re), tungsten (W), vanadium (V), and manganese (Mn), and a stacked structure provided on the underlayer, and including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer.

Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a magnetic material containing at least one element selected from a first group consisting of Mn, Fe, Co, and Ni; at least one element selected from a second group consisting of Ru, Rh, Pd, Ag, Os, Ir, Pt, and Au; and at least one element selected from a third group consisting of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The first nonmagnetic layer includes an oxide including an inverse-spinel structure.

Abstract: A magnetoresistive element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, the first ferromagnetic layer including (MnxGay)100-zPtz, the (MnxGay)100-zPtz having a tetragonal crystal structure, where 45 atm %?x?75 atm %, 25 atm %?y?55 atm %, x+y=100 atm %, and 0 atm %<z?7 atm %.

Abstract: A magnetoresistive element according to an embodiment includes: a first layer containing Al and at least one element of Ni or Co, the first layer having a CsCl structure; a first magnetic layer; a first nonmagnetic layer between the first layer and the first magnetic layer; and a second magnetic layer between the first layer and the first nonmagnetic layer, the second magnetic layer containing Mn and Ga.

Abstract: According to one embodiment, a memory device includes: a first memory element arranged above a substrate; a first contact portion adjacent to the first memory element in a first direction parallel to a surface of the substrate; a second contact portion arranged above the first memory element in a second direction perpendicular to the surface of the substrate; and a second memory element arranged above the first contact portion in the second direction. First dimensions at upper parts of the first and second memory elements are smaller than second dimensions at lower parts of the first and second memory elements, and third dimensions at upper parts of the first and second contact portions are larger than fourth dimensions at lower parts of the first and second contact portions.

Abstract: According to one embodiment, a magnetic memory device includes a conductive underlayer having an amorphous structure and containing at least one first predetermined element selected from molybdenum (Mo), magnesium (Mg), rhenium (Re), tungsten (W), vanadium (V), and manganese (Mn), and a stacked structure provided on the underlayer, and including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer.

Abstract: A magnetic memory according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a first layer disposed between the first magnetic layer and the third magnetic layer, wherein the first layer contains at least one element selected from the group consisting of Co, Fe, Ni, and Mn, and at least one element selected from the group consisting of Ta, Mo, Zr, Nb, Hf, V, Ti, Sc, and La.

Abstract: A magnetoresistive element according to an embodiment includes: a first layer; a first magnetic layer; a second magnetic layer disposed between the first layer and the first magnetic layer; a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and an insulating layer disposed at least on side surfaces of the nonmagnetic layer, the first layer including: at least one element selected from a first group consisting of Hf, Zr, Al, Cr, and Mg; and at least one element selected from a second group consisting of Ta, W, Mo, Nb, Si, Ge, Be, Li, Sn, Sb, and P, and the insulating layer including at least one element selected from the first group.

Abstract: A magnetic memory according to an embodiment includes: a conductive layer including a first and second terminals; a plurality of magnetoresistive elements separately disposed on the conductive layer between the first and second terminals, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first and second terminals, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first and second terminals in an opposite direction to the first write current.

Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, the first magnetic layer containing Mn and at least one of Ge, Ga, or Al, and the third magnetic layer containing Mn2VZ, where V represents vanadium, and Z represents at least one element of Al or Ga.

Abstract: A magnetic memory according to an embodiment includes: a conductive nonmagnetic layer including a first terminal, a second terminal, and a region between the first terminal and the second terminal; a magnetoresistive element including: a first magnetic layer; a second magnetic layer disposed between the region and the first magnetic layer; and a nonmagnetic intermediate layer disposed between the first magnetic layer and the second magnetic layer; a transistor including a third terminal, a fourth terminal, and a control terminal, the third terminal being electrically connected to the first terminal; a first wiring electrically connected to the first magnetic layer and the fourth terminal; a second wiring electrically connected to the control terminal; and a third wiring electrically connected to the second terminal.