Patents by Inventor Tadaomi Daibou
Tadaomi Daibou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180268887Abstract: A magnetoresistive element according to an embodiment includes: a first nonmagnetic layer; a first magnetic layer; a second magnetic layer disposed between the first nonmagnetic layer and the first magnetic layer; a second nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third nonmagnetic layer disposed between the second nonmagnetic layer and the second magnetic layer; and a third magnetic layer disposed between the second nonmagnetic layer and the third nonmagnetic layer, wherein elements constituting the second magnetic layer at least partially differ from elements constituting the third magnetic layer, a relative permittivity of the first nonmagnetic layer is at least 10, and the third nonmagnetic layer contains at least one element selected from the group consisting of Nb, Ta, Mo, W, Hf, Zr, Ti, Sc, V, Cr, Mn, Fe, Co, Ni, Mg, Al, Ru, Ir, Rh, Pd, Pt, Cu, Ag, and Au.Type: ApplicationFiled: September 11, 2017Publication date: September 20, 2018Applicant: TOSHIBA MEMORY CORPORATIONInventors: Masaki ENDO, Tadaomi Daibou, Shumpei Omine, Junichi Ito, Akiyuki Murayama, Takeshi Iwasaki
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Publication number: 20180269382Abstract: A magnetic memory according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a first layer disposed between the first magnetic layer and the third magnetic layer, wherein the first layer contains at least one element selected from the group consisting of Co, Fe, Ni, and Mn, and at least one element selected from the group consisting of Ta, Mo, Zr, Nb, Hf, V, Ti, Sc, and La.Type: ApplicationFiled: September 13, 2017Publication date: September 20, 2018Applicant: TOSHIBA MEMORY CORPORATIONInventors: Shumpei OMINE, Takeshi IWASAKI, Masaki ENDO, Akiyuki MURAYAMA, Tadaomi DAIBOU, Tadashi KAI, Junichi ITO
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Patent number: 10068946Abstract: A magnetic memory of an embodiment includes: a first nonmagnetic layer including a first and second faces; a first and second wirings disposed on a side of the first face; a third wiring disposed on a side of the second face; a first transistor, one of the source and the drain being connected to the first wiring, the other one being connected to the first nonmagnetic layer; a second transistor, one of source and drain being connected to the second wiring, the other one being connected to the first nonmagnetic layer; a magnetoresistive element disposed between the first nonmagnetic layer and the third wiring, a first terminal of the magnetoresistive element being connected to the first nonmagnetic layer; and a third transistor, one of source and drain of the third transistor being connected to the second terminal, the other one being connected to the third wiring.Type: GrantFiled: September 13, 2016Date of Patent: September 4, 2018Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Naoharu Shimomura, Hiroaki Yoda, Tadaomi Daibou, Yuuzo Kamiguchi, Yuichi Ohsawa, Tomoaki Inokuchi, Satoshi Shirotori
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Patent number: 9991314Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, the second magnetic layer containing a material with a composition (lR1-xhRx)z(TM1-yZy)1-z (0<x<1, 0?y?0.6, 0.13?z?0.22) where lR is at least one element of Y, La, Ce, Pr, Nd, and Sm, hR is at least one element of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu, TM is at least one element of Mn, Fe, Co, or Ni, and Z is at least one element of B, C, Mg, Al, Sc, Ti, Cu, or Zn.Type: GrantFiled: September 12, 2016Date of Patent: June 5, 2018Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Naoki Hase, Tadaomi Daibou, Yushi Kato, Shumpei Omine, Junichi Ito
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Patent number: 9985201Abstract: A magnetic memory of an embodiment includes: a first to third terminals; a magnetoresistive element including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second nonmagnetic layer including a first to third portions, the first portion being located between the second and the third portions, the second and third portions being electrically connected to the second and third terminals respectively, the first magnetic layer being disposed between the first portion and the first nonmagnetic layer; and a third nonmagnetic layer including a fourth to sixth portions, the fourth portion being located between the first portion and the first magnetic layer, the fifth portion including a first region extending from the magnetoresistive element to the second terminal, the sixth portion including a second region extending from the magnetoresistive element to the third terminal.Type: GrantFiled: March 7, 2017Date of Patent: May 29, 2018Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Satoshi Shirotori, Hiroaki Yoda, Yuichi Ohsawa, Yuuzo Kamiguchi, Naoharu Shimomura, Tadaomi Daibou, Tomoaki Inokuchi
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Publication number: 20180114558Abstract: A magnetic memory according to an embodiment includes: a conductive layer including a first and second terminals; a plurality of magnetoresistive elements separately disposed on the conductive layer between the first and second terminals, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first and second terminals, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first and second terminals in an opposite direction to the first write current.Type: ApplicationFiled: December 20, 2017Publication date: April 26, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Hiroaki Yoda, Naoharu Shimomura, Yuichi Ohsawa, Tadaomi Daibou, Tomoaki Inokuchi, Satoshi Shirotori, Altansargai Buyandalai, Yuuzo Kamiguchi
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Publication number: 20180090671Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The first nonmagnetic layer includes an oxide including an inverse-spinel structure.Type: ApplicationFiled: September 8, 2017Publication date: March 29, 2018Applicants: Kabushiki Kaisha Toshiba, NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Yushi KATO, Tadaomi DAIBOU, Yuuzo KAMIGUCHI, Naoharu SHIMOMURA, Junichi ITO, Hiroaki SUKEGAWA, Mohamed BELMOUBARIK, Po-Han CHENG, Seiji MITANI, Tadakatsu OHKUBO, Kazuhiro HONO
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Publication number: 20180083065Abstract: A magnetoresistive element according to an embodiment includes: a first layer; a first magnetic layer; a second magnetic layer disposed between the first layer and the first magnetic layer; a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and an insulating layer disposed at least on side surfaces of the nonmagnetic layer, the first layer including: at least one element selected from a first group consisting of Hf, Zr, Al, Cr, and Mg; and at least one element selected from a second group consisting of Ta, W, Mo, Nb, Si, Ge, Be, Li, Sn, Sb, and P, and the insulating layer including at least one element selected from the first group.Type: ApplicationFiled: February 28, 2017Publication date: March 22, 2018Applicant: TOSHIBA MEMORY CORPORATIONInventors: Masaki ENDO, Tadaomi DAIBOU, Shumpei OMINE, Akiyuki MURAYAMA, Junichi ITO
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Patent number: 9916882Abstract: A magnetic memory of an embodiment includes: a first to third terminals; a magnetoresistive element including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second nonmagnetic layer including a first to third portions, the first portion being located between the second and the third portions, the second and third portions being electrically connected to the second and third terminals respectively, the first magnetic layer being disposed between the first portion and the first nonmagnetic layer; and a third nonmagnetic layer including a fourth to sixth portions, the fourth portion being located between the first portion and the first magnetic layer, the fifth portion including a first region extending from the magnetoresistive element to the second terminal, the sixth portion including a second region extending from the magnetoresistive element to the third terminal.Type: GrantFiled: September 12, 2016Date of Patent: March 13, 2018Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Satoshi Shirotori, Hiroaki Yoda, Yuichi Ohsawa, Yuuzo Kamiguchi, Naoharu Shimomura, Tadaomi Daibou, Tomoaki Inokuchi
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Patent number: 9881660Abstract: A magnetic memory according to an embodiment includes: a conductive layer including a first and second terminals; a plurality of magnetoresistive elements separately disposed on the conductive layer between the first and second terminals, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first and second terminals, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first and second terminals in an opposite direction to the first write current.Type: GrantFiled: September 16, 2016Date of Patent: January 30, 2018Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Hiroaki Yoda, Naoharu Shimomura, Yuichi Ohsawa, Tadaomi Daibou, Tomoaki Inokuchi, Satoshi Shirotori, Altansargai Buyandalai, Yuuzo Kamiguchi
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Patent number: 9859491Abstract: A magnetoresistive element according to an embodiment includes a stack structure, the stack structure including: a first magnetic layer containing Mn and at least one element of Ga, Ge, or Al; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a second nonmagnetic layer disposed between the first magnetic layer and the third magnetic layer, the second nonmagnetic layer containing at least one element of Mg, Ba, Ca, C, Sr, Sc, Y, Gd, Tb, Dy, Ce, Ho, Yb, Er, or B.Type: GrantFiled: September 8, 2016Date of Patent: January 2, 2018Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Tadaomi Daibou, Yushi Kato, Shumpei Omine, Naoki Hase, Junichi Ito
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Patent number: 9793469Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a layer having an amorphous structure, the layer containing two or more elements that are contained in the first magnetic layer, the layer being disposed between the first magnetic layer and the third magnetic layer.Type: GrantFiled: September 8, 2016Date of Patent: October 17, 2017Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Yushi Kato, Tadaomi Daibou, Yuichi Ohsawa, Shumpei Omine, Naoki Hase
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Patent number: 9780298Abstract: According to one embodiment, a magnetoresistive element includes a recording layer having a variable magnetization direction, a reference layer having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a first buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the intermediate layer is provided. The recording layer comprises a first magnetic layer which is provided in a side of the intermediate layer and contains CoFe as a main component, and a second magnetic layer which is provided in a side of the first buffer layer and contains CoFe as a main component, a concentration of Fe in the first magnetic layer being higher than a concentration of Fe in the second magnetic layer. The first buffer layer comprises a nitrogen compound.Type: GrantFiled: September 18, 2015Date of Patent: October 3, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Eiji Kitagawa, Tadaomi Daibou, Tadashi Kai, Toshihiko Nagase, Kenji Noma, Hiroaki Yoda
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Publication number: 20170179374Abstract: A magnetoresistive element according to an embodiment includes: a first layer containing Al and at least one element of Ni or Co, the first layer having a CsCl structure; a first magnetic layer; a first nonmagnetic layer between the first layer and the first magnetic layer; and a second magnetic layer between the first layer and the first nonmagnetic layer, the second magnetic layer containing Mn and Ga.Type: ApplicationFiled: February 28, 2017Publication date: June 22, 2017Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Shumpei OMINE, Tadaomi Daibou, Yushi Kato, Naoki Hase, Junichi Ito
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Publication number: 20170179379Abstract: A magnetic memory of an embodiment includes: a first to third terminals; a magnetoresistive element including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second nonmagnetic layer including a first to third portions, the first portion being located between the second and the third portions, the second and third portions being electrically connected to the second and third terminals respectively, the first magnetic layer being disposed between the first portion and the first nonmagnetic layer; and a third nonmagnetic layer including a fourth to sixth portions, the fourth portion being located between the first portion and the first magnetic layer, the fifth portion including a first region extending from the magnetoresistive element to the second terminal, the sixth portion including a second region extending from the magnetoresistive element to the third terminal.Type: ApplicationFiled: March 7, 2017Publication date: June 22, 2017Applicant: Kabushiki Kaisha ToshibaInventors: SATOSHI SHIROTORI, Hiroaki Yoda, Yuichi Ohsawa, Yuuzo Kamiguchi, Naoharu Shimomura, Tadaomi Daibou, Tomoaki Inokuchi
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Publication number: 20170170389Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a magnetic material containing at least one element selected from a first group consisting of Mn, Fe, Co, and Ni; at least one element selected from a second group consisting of Ru, Rh, Pd, Ag, Os, Ir, Pt, and Au; and at least one element selected from a third group consisting of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.Type: ApplicationFiled: February 28, 2017Publication date: June 15, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Naoki HASE, Takao OCHIAI, Tadaomi DAIBOU, Yushi KATO, Shumpei OMINE, Junichi ITO
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Publication number: 20170169872Abstract: A magnetic memory according to an embodiment includes: a conductive layer including a first and second terminals; a plurality of magnetoresistive elements separately disposed on the conductive layer between the first and second terminals, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first and second terminals, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first and second terminals in an opposite direction to the first write current.Type: ApplicationFiled: September 16, 2016Publication date: June 15, 2017Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiroaki YODA, Naoharu SHIMOMURA, Yuichi OHSAWA, Tadaomi DAIBOU, Tomoaki INOKUCHI, Satoshi SHIROTORI, Altansargai BUYANDALAI, Yuuzo KAMIGUCHI
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Publication number: 20170141158Abstract: A magnetic memory according to an embodiment includes: a conductive nonmagnetic layer including a first terminal, a second terminal, and a region between the first terminal and the second terminal; a magnetoresistive element including: a first magnetic layer; a second magnetic layer disposed between the region and the first magnetic layer; and a nonmagnetic intermediate layer disposed between the first magnetic layer and the second magnetic layer; a transistor including a third terminal, a fourth terminal, and a control terminal, the third terminal being electrically connected to the first terminal; a first wiring electrically connected to the first magnetic layer and the fourth terminal; a second wiring electrically connected to the control terminal; and a third wiring electrically connected to the second terminal.Type: ApplicationFiled: January 31, 2017Publication date: May 18, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Tadaomi DAIBOU, Naoharu SHIMOMURA, Yuuzo KAMIGUCHI, Hiroaki YODA, Yuichi OHSAWA, Tomoaki INOKUCHI, Satoshi SHIROTORI
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Publication number: 20170076769Abstract: A magnetic memory of an embodiment includes: a first to third terminals; a magnetoresistive element including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second nonmagnetic layer including a first to third portions, the first portion being located between the second and the third portions, the second and third portions being electrically connected to the second and third terminals respectively, the first magnetic layer being disposed between the first portion and the first nonmagnetic layer; and a third nonmagnetic layer including a fourth to sixth portions, the fourth portion being located between the first portion and the first magnetic layer, the fifth portion including a first region extending from the magnetoresistive element to the second terminal, the sixth portion including a second region extending from the magnetoresistive element to the third terminal.Type: ApplicationFiled: September 12, 2016Publication date: March 16, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Satoshi SHIROTORI, Hiroaki YODA, Yuichi OHSAWA, Yuuzo KAMIGUCHI, Naoharu SHIMOMURA, Tadaomi DAIBOU, Tomoaki INOKUCHI
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Publication number: 20170077177Abstract: A magnetic memory of an embodiment includes: a first nonmagnetic layer including a first and second faces; a first and second wirings disposed on a side of the first face; a third wiring disposed on a side of the second face; a first transistor, one of the source and the drain being connected to the first wiring, the other one being connected to the first nonmagnetic layer; a second transistor, one of source and drain being connected to the second wiring, the other one being connected to the first nonmagnetic layer; a magnetoresistive element disposed between the first nonmagnetic layer and the third wiring, a first terminal of the magnetoresistive element being connected to the first nonmagnetic layer; and a third transistor, one of source and drain of the third transistor being connected to the second terminal, the other one being connected to the third wiring.Type: ApplicationFiled: September 13, 2016Publication date: March 16, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Naoharu SHIMOMURA, Hiroaki YODA, Tadaomi DAIBOU, Yuuzo KAMIGUCHI, Yuichi OHSAWA, Tomoaki INOKUCHI, Satoshi SHIROTORI