Abstract: The present invention relates to a technology for a jig for evaluating a solid oxide fuel cell, and more particularly, to a jig for evaluating a solid oxide fuel cell in which a press is formed in an upper plate and a lower plate of a jig which evaluates a characteristic of a fuel cell, so that gas leakage through a sealant and attachment strength of the sealant and a performance of a unit cell are simultaneously evaluated by using one jig.

Abstract: The present specification relates to a method for manufacturing an electrolyte membrane for a solid oxide fuel cell, an electrolyte membrane for a solid oxide fuel cell, a solid oxide fuel cell including the electrolyte membrane, and a fuel cell module including the solid oxide fuel cell.

Abstract: A fuel cell stack has a prevention dam formed outside an alignment pin such that a sealing material, which has viscosity and fluidity at a sealing temperature of a fuel cell, may be prevented from coming into contact with and adhering to the alignment pin, and pressure applied from the outside may be uniformly applied to the fuel cell stack.

Abstract: Provided are a high manganese hot dip aluminum-plated steel sheet and a method for manufacturing the same, the steel sheet including: a base steel comprising, by wt %, 0.3-0.9% of C, 10-25% of Mn, 0.01-0.5% of Ti, 0.01-0.2% of Sn, 0.01-0.1% of Sb, and the balance of Fe and inevitable impurities; a hot dip aluminum-based steel plated layer formed on the base steel sheet and comprising 0.1 wt % or more of a sum of one or more types among Li, Na, and K, and the balance of Al and inevitable impurities; and an Al—Fe—Si—Mn based alloy layer formed between the base steel sheet and the aluminum-based plated layer, and having a dual structure with different average Fe amounts.

Abstract: A magnetic tunnel junction device includes a pinned magnetic layer, a free magnetic layer embodied as a synthetic antiferromagnetic device, and a nonmagnetic barrier layer sandwiched between the pinned magnetic layer and the free magnetic layer. The free magnetic layer includes a first ferromagnetic layer, a second ferromagnetic layer and a nonmagnetic spacing layer sandwiched between them; and can transform from the antiferromagnetic state to the ferromagnetic state regulated by electric field. Under the coaction of the electric field and the current, the ferromagnetic layer close to the barrier layer of the magnetic tunnel junction is switched to write in data. Also, a magnetic random access memory based on a synthetic antiferromagnetic free layer can write in data under the coaction of the electric field and the current, and has advantages such as simple structure, low power consumption, rapid speed, radiation resistant, and non-volatility.

Abstract: A method includes encapsulating a device in an encapsulating material, planarizing the encapsulating material and the device, and forming a conductive feature over the encapsulating material and the device. The formation of the conductive feature includes depositing a first conductive material to from a first seed layer, depositing a second conductive material different from the first conductive material over the first seed layer to form a second seed layer, plating a metal region over the second seed layer, performing a first etching on the second seed layer, performing a second etching on the first seed layer, and after the first seed layer is etched, performing a third etching on the second seed layer and the metal region.

Abstract: A method includes the following steps. A seed layer is formed over a structure having at least one semiconductor die. A first patterned photoresist layer is formed over the seed layer, wherein the first patterned photoresist layer includes a first opening exposing a portion of the seed layer. A metallic wiring is formed in the first opening and on the exposed portion of the seed layer. A second patterned photoresist layer is formed on the first patterned photoresist layer and covers the metallic wiring, wherein the second patterned photoresist layer includes a second opening exposing a portion of the metallic wiring. A conductive via is formed in the second opening and on the exposed portion of the metallic wiring. The first patterned photoresist layer and the second patterned photoresist layer are removed. The metallic wiring and the conductive via are laterally wrapped around with an encapsulant.

Abstract: Provided are a hot-dipped galvanized steel material and a method for manufacturing the same. The hot-dipped galvanized steel material comprises an iron substrate and a hot-dipped galvanizing layer formed on the iron substrate, wherein the hot-dipped galvanizing layer comprises, by wt %, 0.01 to 0.5% of Al, 0.01 to 1.5% of Mg, 0.05 to 1.5% of Mn, 0.1 to 6% of Fe, and the balance of Zn and inevitable impurities, with a Zn—Fe—Mn based alloy phase present at the interface between the iron substrate and the hot-dipped galvanizing layer, and an area ratio of the Zn—Fe—Mn-based alloy phase to the hot-dipped galvanizing layer ranging from 1 to 60%.

Abstract: A fuel cell stack structure in which unit cells are stacked includes first window frames and second window frame. The second window frames each have an area larger than an area of a first window frame and are periodically disposed at a predetermined interval in a direction in which the unit cells are stacked. Heat movement is promoted, a temperature deviation in the fuel cell stack structure is mitigated, and a temperature distribution is uniformized.

Abstract: A magnetic structure includes a magnetic tunnel junction based on a synthetic antiferromagnetic free layer which is regulated by an electric field, and a spin-orbit layer located below the magnetic tunnel junction. The transformation from the antiferromagnetic coupling to the ferromagnetic coupling of the free layer based on a synthetic antiferromagnetic multilayer structure is controlled by an electric field. A spin-orbit torque magnetic random access memory, which includes the magnetic structure, is able to realize stable data writing under the combined interaction of electric field and current, and has advantages of simple structure for scaling, ultralow power consumption, ultrahigh speed of switching, radiation resistance and non-volatility.

Abstract: A method includes encapsulating a device in an encapsulating material, planarizing the encapsulating material and the device, and forming a conductive feature over the encapsulating material and the device. The formation of the conductive feature includes depositing a first conductive material to from a first seed layer, depositing a second conductive material different from the first conductive material over the first seed layer to form a second seed layer, plating a metal region over the second seed layer, performing a first etching on the second seed layer, performing a second etching on the first seed layer, and after the first seed layer is etched, performing a third etching on the second seed layer and the metal region.

Abstract: A method includes encapsulating a device in an encapsulating material, planarizing the encapsulating material and the device, and forming a conductive feature over the encapsulating material and the device. The formation of the conductive feature includes depositing a first conductive material to from a first seed layer, depositing a second conductive material different from the first conductive material over the first seed layer to form a second seed layer, plating a metal region over the second seed layer, performing a first etching on the second seed layer, performing a second etching on the first seed layer, and after the first seed layer is etched, performing a third etching on the second seed layer and the metal region.

Abstract: A flat plate-shaped solid oxide fuel cell having a porous ceramic support, a fuel electrode provided on the porous ceramic support, an electrolyte layer provided on the fuel electrode, an air electrode provided on the electrolyte layer, and a fuel electrode current collector connected to the fuel electrode and extending in a direction way from the air electrode is provided.

Abstract: A solid oxide fuel cell is provided that includes an an anode, a cathode, and an electrolyte provided between the anode and the cathode.

Abstract: A method includes encapsulating a device in an encapsulating material, planarizing the encapsulating material and the device, and forming a conductive feature over the encapsulating material and the device. The formation of the conductive feature includes depositing a first conductive material to from a first seed layer, depositing a second conductive material different from the first conductive material over the first seed layer to form a second seed layer, plating a metal region over the second seed layer, performing a first etching on the second seed layer, performing a second etching on the first seed layer, and after the first seed layer is etched, performing a third etching on the second seed layer and the metal region.

Abstract: A planar type solid oxide fuel cell, and more particularly, a thin and light planar type solid oxide fuel cell omits a window frame and has a simplified a unit cell having a through hole through which fuel and air flow in/out a fuel electrode.

Abstract: A solid oxide fuel cell, and more particularly, a thin and light solid oxide fuel cell has a sealant layer in which a passage through which fuel and air may flow in and out. A support is located on an inner wall of the passage to prevent the blockage of the passage due to flow generated in the sealant layer at a high temperature. A window frame is omitted to simplify a configuration.

Abstract: The present disclosure relates to an air electrode composition, an air electrode, and a fuel cell including the same.

Abstract: A magnetic tunnel junction device includes a pinned magnetic layer, a free magnetic layer embodied as a synthetic antiferromagnetic device, and a nonmagnetic barrier layer sandwiched between the pinned magnetic layer and the free magnetic layer. The free magnetic layer includes a first ferromagnetic layer, a second ferromagnetic layer and a nonmagnetic spacing layer sandwiched between them; and can transform from the antiferromagnetic state to the ferromagnetic state regulated by electric field. Under the coaction of the electric field and the current, the ferromagnetic layer close to the barrier layer of the magnetic tunnel junction is switched to write in data. Also, a magnetic random access memory based on a synthetic antiferromagnetic free layer can write in data under the coaction of the electric field and the current, and has advantages such as simple structure, low power consumption, rapid speed, radiation resistant, and non-volatility.

Abstract: A magnetic tunnel junction device and a magnetic random access memory based on a synthetic antiferromagnetic pinned layer are disclosed, relating to a multilayer structure which is suitable for a pinned layer, namely a synthetic antiferromagnetic device. Antiferromagnetic coupling of the synthetic antiferromagnetic device can be enhanced by electric field. The synthetic antiferromagnetic device can be used as a pinned layer of the magnetic tunnel junction, and the antiferromagnetic coupling is enhanced under the electric field to ensure that a ferromagnetic layer, which is close to a barrier layer, of the pinned layer will not be switched, thereby achieving stable data writing. The magnetic random access memory is formed by the magnetic tunnel junction based on the synthetic antiferromagnetic pinned layer, has advantages such as, high density, low power consumption, high speed, radiation resistance and non-volatility.