Patents by Inventor Tai Min

Tai Min has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • JIG MODULE FOR SOLID OXIDE FUEL CELL
    Publication number: 20180316025
    Abstract: The present invention relates to a technology for a jig for evaluating a solid oxide fuel cell, and more particularly, to a jig for evaluating a solid oxide fuel cell in which a press is formed in an upper plate and a lower plate of a jig which evaluates a characteristic of a fuel cell, so that gas leakage through a sealant and attachment strength of the sealant and a performance of a unit cell are simultaneously evaluated by using one jig.
    Type: Application
    Filed: August 24, 2017
    Publication date: November 1, 2018
    Applicant: LG CHEM, LTD.
    Inventors: Kwangyeon PARK, Sanghyeok IM, Yeonhyuk HEO, Tai Min NOH, Kwangwook CHOI
  • FLAT PLATE-SHAPED SOLID OXIDE FUEL CELL AND CELL MODULE COMPRISING SAME
    Publication number: 20180219234
    Abstract: The present specification relates a solid oxide fuel cell. Specifically, the present specification relates to a solid oxide fuel cell consecutively provided with a fuel electrode, an electrolyte layer and an air electrode.
    Type: Application
    Filed: July 27, 2016
    Publication date: August 2, 2018
    Applicant: LG CHEM, LTD.
    Inventors: Yeonhyuk HEO, Kwangwook CHOI, Sanghyeok IM, Takkeun OH, Jeong Mi CHOI, Tai Min NOH
  • CATHODE COMPOSITION, CATHODE AND FUEL CELL INCLUDING SAME
    Publication number: 20180198133
    Abstract: The present disclosure relates to an air electrode composition, an air electrode, and a fuel cell including the same.
    Type: Application
    Filed: June 10, 2016
    Publication date: July 12, 2018
    Applicant: LG CHEM, LTD.
    Inventors: Sanghyeok IM, Tai Min NOH, Changseok RYOO, Kwangwook CHOI
  • OXIDE PARTICLES, CATHODE INCLUDING SAME, AND FUEL CELL INCLUDING SAME
    Publication number: 20180159142
    Abstract: The present disclosure relates to an oxide particle, an air electrode including the same, and a fuel cell including the same.
    Type: Application
    Filed: May 27, 2016
    Publication date: June 7, 2018
    Applicant: LG CHEM, LTD.
    Inventors: Sanghyeok IM, Tai Min NOH, Changseok RYOO, Kwangwook CHOI
  • METHOD FOR MANUFACTURING ELECTROLYTE MEMBRANE FOR SOLID OXIDE FUEL CELL, ELECTROLYTE MEMBRANE FOR SOLID OXIDE FUEL CELL, SOLID OXIDE FUEL CELL, AND FUEL CELL MODULE
    Publication number: 20180138535
    Abstract: The present specification relates to a method for manufacturing an electrolyte membrane for a solid oxide fuel cell, an electrolyte membrane for a solid oxide fuel cell, a solid oxide fuel cell including the electrolyte membrane, and a fuel cell module including the solid oxide fuel cell.
    Type: Application
    Filed: June 10, 2016
    Publication date: May 17, 2018
    Applicant: LG CHEM, LTD.
    Inventors: Jong Woo KIM, Jeong Mi CHOI, Dong Oh SHIN, Changseok RYOO, Gyunjoong KIM, Kwangwook CHOI, Sanghyeok IM, Yeonhyuk HEO, Tai Min NOH
  • Spin torque majority gate device
    Patent number: 9947860
    Abstract: The disclosed technology generally relates to magnetic devices, and more particularly to spin torque devices. In one aspect, a spin torque majority gate device includes a free ferromagnetic layer, a spin mixing layer formed above the free ferromagnetic layer, a non-magnetic tunnelling layer formed above the spin mixing layer, and a plurality of input elements formed above the non-magnetic tunnelling layer, where each input element has a fixed ferromagnetic layer.
    Type: Grant
    Filed: December 15, 2015
    Date of Patent: April 17, 2018
    Assignee: IMEC vzw
    Inventor: Tai Min
  • METHOD FOR MANUFACTURING ELECTRODE, ELECTRODE MANUFACTURED BY SAME, ELECTRODE STRUCTURE INCLUDING ELECTRODE, FUEL CELL OR METAL-AIR SECONDARY BATTERY, BATTERY MODULE INCLUDING CELL OR BATTERY, AND COMPOSITION FOR MANUFACTURING ELECTRODE
    Publication number: 20180006301
    Abstract: The present specification relates to a method for manufacturing an electrode, an electrode manufactured by the same, an electrode structure including the electrode, a fuel cell or a metal-air secondary battery including the electrode, a battery module including the fuel cell or the metal-air secondary battery, and a composition for manufacturing an electrode.
    Type: Application
    Filed: March 7, 2016
    Publication date: January 4, 2018
    Applicant: LG CHEM, LTD.
    Inventors: Sanghyeok IM, Changseok RYOO, Gyunjoong KIM, Kwangwook CHOI, Jong Woo KIM, Yeonhyuk HEO, Tai Min NOH
  • Three-dimensional magnetic memory element
    Patent number: 9601544
    Abstract: The disclosed technology relates to a magnetic memory device. In one aspect, the device includes a first electrode comprising a conductive pillar formed over the substrate and elongated in a vertical direction crossing a lateral surface of the substrate. The device additionally includes a second electrode extending in a lateral direction crossing the first direction, where the second electrode intersects the first electrode. The device additionally includes a magnetic tunnel junction (MTJ) formed at an intersection between the first electrode and the second electrode, where the MTJ continuously surrounds the first electrode. The MTJ includes a reference layer continuously surrounding the pillar of the first electrode, a free layer continuously surrounding the free layer, and a dielectric tunnel barrier interposed between the reference layer and the free layer.
    Type: Grant
    Filed: July 15, 2014
    Date of Patent: March 21, 2017
    Assignee: IMEC
    Inventor: Tai Min
  • SPIN TORQUE MAJORITY GATE DEVICE
    Publication number: 20160172581
    Abstract: The disclosed technology generally relates to magnetic devices, and more particularly to spin torque devices. In one aspect, a spin torque majority gate device includes a free ferromagnetic layer, a spin mixing layer formed above the free ferromagnetic layer, a non-magnetic tunnelling layer formed above the spin mixing layer, and a plurality of input elements formed above the non-magnetic tunnelling layer, where each input element has a fixed ferromagnetic layer.
    Type: Application
    Filed: December 15, 2015
    Publication date: June 16, 2016
    Inventor: Tai Min
  • Method of forming a writer with an AFM write gap
    Patent number: 9336799
    Abstract: A perpendicular magnetic recording (PMR) head is fabricated with main pole and a trailing edge shield antiferromagnetically coupled across a write gap by either having the write gap layer formed as a synthetic antiferromagnetic tri-layer (SAF) or formed as a monolithic layer of antiferromagnetic material. The coupling improves the write performance of the writer by enhancing the perpendicular component of the write field and its gradient. Methods of fabricating the writer are provided.
    Type: Grant
    Filed: October 8, 2013
    Date of Patent: May 10, 2016
    Assignee: Headway Technologies, Inc.
    Inventors: Tai Min, Yuhui Tang, Lijie Guan, Min Li
  • Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application
    Patent number: 9331271
    Abstract: A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.
    Type: Grant
    Filed: December 6, 2013
    Date of Patent: May 3, 2016
    Assignee: Headway Technologies, Inc.
    Inventors: Cheng T. Horng, Ru-Ying Tong, Guangli Liu, Robert Beach, Witold Kula, Tai Min
  • Magnetic memory element
    Patent number: 9281468
    Abstract: The disclosed technology generally relates to semiconductor devices, and more particularly spin transfer torque magnetic random access memory (STTMRAM) elements having perpendicular magnetic anisotropy (PMA). In one aspect, a magnetic element comprises a metal underlayer and a seed layer on the underlayer, the seed layer comprising alternating layers of a first metal and a second metal. The alternating layers of a first metal and a second metal are repeated n times with, 2<=n<=20.
    Type: Grant
    Filed: June 17, 2014
    Date of Patent: March 8, 2016
    Assignee: IMEC
    Inventors: Tai Min, Taiebeh Tahmasebi
  • THREE-DIMENSIONAL MAGNETIC MEMORY ELEMENT
    Publication number: 20150021675
    Abstract: The disclosed technology relates to a magnetic memory device. In one aspect, the device includes a first electrode comprising a conductive pillar formed over the substrate and elongated in a vertical direction crossing a lateral surface of the substrate. The device additionally includes a second electrode extending in a lateral direction crossing the first direction, where the second electrode intersects the first electrode. The device additionally includes a magnetic tunnel junction (MTJ) formed at an intersection between the first electrode and the second electrode, where the MTJ continuously surrounding the first electrode. The MTJ includes a reference layer continuously surrounding the pillar of the first electrode, a free layer continuously surrounding the free layer, and a dielectric tunnel barrier interposed between the reference layer and the free layer.
    Type: Application
    Filed: July 15, 2014
    Publication date: January 22, 2015
    Inventor: Tai MIN
  • METHOD FOR PATTERNING A MAGNETIC TUNNEL JUNCTION STACK
    Publication number: 20150021726
    Abstract: The disclosed technology generally relates to methods of fabricating magnetic memory devices, and more particularly to methods of forming a magnetic tunnel junction (MTJ) stack. In one aspect, a method of forming the MTJ includes providing an MTJ material stack comprising a ferromagnetic material and forming thereon a protective mask layer to cover an active area of the MTJ material stack. The method additionally includes incorporating a glass-forming element into exposed portions of the ferromagnetic material. The method additionally includes at least partially amorphizing the exposed portions of the ferromagnetic material, wherein at least partially amorphizing transforms the exposed portions of the ferromagnetic material into an electrical insulator.
    Type: Application
    Filed: July 16, 2014
    Publication date: January 22, 2015
    Inventors: Tai Min, Vasile PARASCHIV, Werner BOULLART, Mihaela loana POPOVICI
  • MAGNETIC MEMORY ELEMENT
    Publication number: 20150008550
    Abstract: The disclosed technology generally relates to semiconductor devices, and more particularly spin transfer torque magnetic random access memory (STTMRAM) elements having perpendicular magnetic anisotropy (PMA). In one aspect, a magnetic element comprises a metal underlayer and a seed layer on the underlayer, the seed layer comprising alternating layers of a first metal and a second metal. The alternating layers of a first metal and a second metal are repeated n times with, 2<=n<=20.
    Type: Application
    Filed: June 17, 2014
    Publication date: January 8, 2015
    Inventors: Tai Min, Taiebeh Tahmasebi
  • High data rate writer design
    Patent number: 8929029
    Abstract: A magnetic write head is fabricated with its main pole attached to and magnetically coupled to a tapered yoke. The tapered yoke can be a top yoke (on the trailing side of the pole), a bottom yoke (on the leading side of the pole) or a combination of top and bottom configurations. The tapered portion of the yoke is at the distal end of the yoke and it is an extension of an otherwise uniformly thick yoke. It is found that the taper enables the yoke to be close to the ABS for better response times and a high data rate, while simultaneously being distant, producing less field disturbance by the shields and corresponding improvement of BER, and ATE/WATE. A taper of 45° is optimal for its production of uniform magnetization of the pole and optimal response times.
    Type: Grant
    Filed: April 16, 2013
    Date of Patent: January 6, 2015
    Assignee: Headway Technologies, Inc.
    Inventors: Tai Min, Suping Song, Yuhui Tang, Lijie Guan
  • High Data Rate Writer Design
    Publication number: 20140307348
    Abstract: A magnetic write head is fabricated with its main pole attached to and magnetically coupled to a tapered yoke. The tapered yoke can be a top yoke (on the trailing side of the pole), a bottom yoke (on the leading side of the pole) or a combination of top and bottom configurations. The tapered portion of the yoke is at the distal end of the yoke and it is an extension of an otherwise uniformly thick yoke. It is found that the taper enables the yoke to be close to the ABS for better response times and a high data rate, while simultaneously being distant, producing less field disturbance by the shields and corresponding improvement of BER, and ATE/WATE. A taper of 45° is optimal for its production of uniform magnetization of the pole and optimal response times.
    Type: Application
    Filed: April 16, 2013
    Publication date: October 16, 2014
    Applicant: Headway Technologies, Inc.
    Inventors: Tai Min, Suping Song, Yuhui Tang, Lijie Guan
  • Thermal dissipation substrate
    Patent number: 8796071
    Abstract: The present invention related to a method for manufacturing a thermal dissipation substrate and a thermal dissipation substrate. The method includes steps of: (a) providing a substrate body having a surface; (b) forming a plurality of concave regions on the surface; and (c) filling the plurality of concave regions with a plurality of diamond materials. The thermal dissipation substrate includes: a substrate having a surface at a first horizontal; a plurality of regions formed on the surface at a second horizontal; and a plurality of diamond materials having a relatively high thermal coefficient and disposed on the plurality of regions.
    Type: Grant
    Filed: July 13, 2012
    Date of Patent: August 5, 2014
    Assignee: National Chiao Tung University
    Inventors: YewChung Sermon Wu, Tai-Min Chang, Yu Chia Chiu, Jen-Li Hu
  • Shield designs with internal magnetization control for ATE improvement
    Patent number: 8755149
    Abstract: A magnetic recording head is fabricated with a pole tip shielded laterally on its sides by a pair of symmetrically disposed side shields formed of porous heterogeneous material that contains non-magnetic inclusions. The non-magnetic inclusions, when properly incorporated within the magnetic matrix of the shields, promote the formation of flux loops within the shields that have portions that are parallel to the ABS and do not display locally disorganized and dynamic regions of flux during the creation of magnetic transitions within the recording medium by the magnetic pole. These flux loop portions, combine with the magnetic flux emerging from the main pole to create a net writing field that significantly reduces adjacent track erasures (ATE) and wide area erasures (WATE).
    Type: Grant
    Filed: September 15, 2012
    Date of Patent: June 17, 2014
    Assignee: Headway Technologies, Inc.
    Inventors: Suping Song, Lijie Guan, Tai Min, Yuhui Tang
  • Structure and Method to Fabricate High Performance MTJ Devices for Spin-Transfer Torque (STT)-RAM Application
    Publication number: 20140099735
    Abstract: A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.
    Type: Application
    Filed: December 6, 2013
    Publication date: April 10, 2014
    Applicant: MagIC Technologies, Inc.
    Inventors: Cheng T. Horng, Ru-Ying Tong, Guangli Liu, Robert Beach, Witold Kula, Tai Min