Abstract: An air pump device includes an electric pump unit including a pump mechanism and a motor configured to drive the pump mechanism, a case housing the electric pump unit, and a vibration-proof member interposed between the electric pump unit and the case. The vibration-proof member is a plate-shaped member made of an elastic resin material and is wound around the electric pump unit to wrap the electric pump unit therein. A part of the vibration-proof member is sandwiched between the electric pump unit and one of facing surfaces that are inner surfaces of the case and face each other inside the case. Another part of the vibration-proof member is sandwiched between the electric pump unit and the other one of the facing surfaces.

Abstract: Provided is a semiconductor device having a structure suitable for higher integration. The semiconductor device includes a transistor that includes a gate section, a first diffusion layer, and a second diffusion layer. The semiconductor device further includes a first electrically-conductive section a second electrically-conductive section that is electrically insulated from the first electrically-conductive section, a first storage element that is located between the first diffusion layer and the first electrically-conductive section and is electrically coupled to each of the first diffusion layer and the first electrically-conductive section, and a second storage element that is located between the second diffusion layer and the second electrically-conductive section and is electrically coupled to each of the second diffusion layer and the second electrically-conductive section.

Abstract: A nonvolatile memory cell includes a resistance-change nonvolatile memory element 50 and a selection transistor TR. One end of the nonvolatile memory element 50 is connected to one source/drain region 15A of the selection transistor TR and is connected to a write line WR. The other source/drain region 15B of the selection transistor TR is connected to a select line SL. The other end of the nonvolatile memory element 50 is connected to a bit line BL.

Abstract: A touch panel includes: first electrodes disposed in parallel at a position corresponding to a viewing area of a panel member and have a capacitance changing according to a proximity of an object to be detected; second electrodes that intersect with the first electrodes, are disposed in parallel, and similarly change in capacitance; third electrodes disposed in parallel between the first or second electrodes and have electrical resistances changing according to posture and temperature; and fourth electrodes extending along the respective third electrodes and similarly change in electrical resistance. A resistance change rate of the fourth electrodes due to temperature is the same as for the third electrodes. The resistance change rate of the fourth electrodes due to the posture change is 90% or less than for the third electrodes due to the posture change. This allows a pressing force to be accurately measured.

Abstract: An information setting system includes a representative setting device and a remote setting device in a wireless communication facility. The remote setting device manages remote management information including information indicating a correspondence relationship among a device identifier, a device name, and a setting object. The representative setting device acquires a device identifier, allocates a network identifier to the device, stores the acquired device identifier and the allocated network identifier, and transmits the device identifier to the remote setting device. The remote setting device specifies a device name and a setting object from the remote management information based on the device identifier, and transmits the device name and the setting object to the representative setting device.

Abstract: A light emitting and receiving module with heater is provided, which includes a base material. A light emitting and receiving element is disposed on the base material and performs at least one of light reception and light emission. A heater film includes an electrode formed on a base sheet. The heater film is formed so as to cover the light emitting and receiving element. A capacitance detection unit electrically connected to the electrode detects a floating capacitance between the light emitting and receiving element and the heater film. A power source electrically connected to the electrode heats the heater film. A control board switches the connection with the electrode between the capacitance detection unit and the power source.

Abstract: An airbag includes a bag portion and a plain cloth portion. The bag portion is woven by double weave. The plain cloth portion is woven by plain weave at an edge of the bag portion. The bag portion and the plain cloth portion include warp threads and filling threads. The bag portion and the plain cloth portion are woven by a one piece woven method to satisfy: (1) each warp thread is not over four consecutive filling threads and each filling thread is not over four consecutive warp threads around a border between the bag portion and the plain cloth portion; and (2) every two adjacent warp threads are not over two adjacent filling threads and every two adjacent filling threads are not over two adjacent warp threads around the border.

Abstract: A gas turbine includes a compressor, a combustor, a turbine, a generator, and a control apparatus, the compressor being provided with an air extraction valves, a plurality of inlet guide vanes, and a plurality of casing air extraction valves at its last stage, in which the control is carried out on at least one of the opening of the air extraction valve, the opening of the inlet guide vanes, and the number of openings of the casing air extraction valves which are defined as control parameters taking blade vibration stress values as indexes based on a compressor metal temperature included in behavior parameters of the gas turbine.

Abstract: A cutting tool includes: a cutting part including a cutting edge having a linear shape; and a fitted part including a fixed section to which the cutting part is fixed, and a fitted part body to be fitted to a cutting device. The cutting edge is located perpendicularly to a virtual line passing through a central axis of the fitted part body, on a plane that is perpendicular to the central axis of the fitted part body. A center of the cutting edge in its longitudinal direction is located on the virtual line.

Abstract: A semiconductor device according to an embodiment of the present technology, and the semiconductor device includes: a first substrate provided with a memory array; and a second substrate that is stacked with the first substrate, and is provided with a peripheral circuit that controls operation of the memory array.

Abstract: A semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is formed to cover one main surface side of the semiconductor layer, electrodes that are disposed to face the semiconductor elements and the connection regions via the insulation film, and contacts that penetrate through the insulation film to be selectively formed in portions according to necessity among portions that connect the semiconductor elements or the connection regions to the electrodes.

Abstract: A volatile logic circuit has a storage node, and stores inputted information. A plurality of non-volatile elements are connected to the storage node of the volatile logic circuit through the same connection gate, and control lines for control for these non-volatile elements are connected to the respective non-volatile elements, every non-volatile element. A plurality of non-volatile elements are connected to the volatile logic circuit through the same connection gate in such a way, thereby enabling the yield to be enhanced.

Abstract: A semiconductor device having a structure suitable for higher integration is provided. The semiconductor device includes: a transistor including a gate section, a first diffusion layer, and a second diffusion layer; a first electrically-conductive section; a second electrically-conductive section that is electrically insulated from the first electrically-conductive section; a first storage element that is located between the first diffusion layer and the first electrically-conductive section and is electrically coupled to each of the first diffusion layer and the first electrically-conductive section; and a second storage element that is located between the second diffusion layer and the second electrically-conductive section and is electrically coupled to each of the second diffusion layer and the second electrically-conductive section.

Abstract: There is provided a linear friction welding method of joining a first member with a second member. The linear friction welding method includes bringing a first plane, a second plane and a first corner portion in an R shape or in a chamfered shape of a first joint surface of the first member into contact with a third plane, a forth plane and a second corner portion in a shape that matches the shape of the first corner portion of a second joint surface of the second member; vibrating either the first member or the second member along an extending direction of the first corner portion and the second corner portion; and joining the first member with the second member by using frictional heat that is generated by friction between the first joint surface and the second joint surface.

Abstract: A semiconductor device including a semiconductor substrate having a first surface and a second surface that face each other, and having an element region and an isolation region, the element region including a transistor in the first surface, and the isolation region including an element isolation layer surrounding the element region; and a contact plug extending from the first surface to the second surface in the isolation region of the semiconductor substrate.

Abstract: A gas turbine includes a compressor, a combustor, a turbine, a generator, and a control apparatus, the compressor being provided with an air extraction valves, a plurality of inlet guide vanes, and a plurality of casing air extraction valves at its last stage, in which the control is carried out on at least one of the opening of the air extraction valve, the opening of the inlet guide vanes, and the number of openings of the casing air extraction valves which are defined as control parameters taking blade vibration stress values as indexes based on a compressor metal temperature included in behavior parameters of the gas turbine.

Abstract: A semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is formed to cover one main surface side of the semiconductor layer, electrodes that are disposed to face the semiconductor elements and the connection regions via the insulation film, and contacts that penetrate through the insulation film to be selectively formed in portions according to necessity among portions that connect the semiconductor elements or the connection regions to the electrodes.

Abstract: Provided is a vehicle seat (1) capable of facilitating the mounting of a cover (30). The cover (30) of a seat cushion (2) is configured such that a upper portion cover (31) is disposed on the upper surface side of the seat cushion (2), a front portion cover (33) extends from the front edge of the upper portion cover (31) to the rear surface side of the seat cushion (2), and a rear portion cover (34) extends from the rear edge of the upper portion cover (31) to the rear surface side of the seat cushion (2). A first link portion (44) which detachably couples the rear edge of the front portion cover (33) and the front edge of the rear portion cover (34) to each other contacts a lower portion pad (22) of a cushion pad (20).