Abstract: A method for cutting an inner circumferential surface of a rotating hollow cylindrical workpiece includes: holding the workpiece with a chucking device such that a side surface of the workpiece on a first side in an axial direction of the workpiece is in contact with a contact surface of the chucking device; setting an intersection angle between a rotational center line of the workpiece and an imaginary straight line to an angle smaller than 45 degrees, the straight line being parallel to an axis line of a button tip and intersecting with the rotational center line; and setting a feed direction of the button tip to the inner circumferential surface to a direction from a second side in the axial direction of the workpiece toward the first side in the axial direction thereof, and cutting the inner circumferential surface by use of the button tip rotating about the axis line.

Abstract: The present disclosure relates to a memory cell structure, a method of manufacturing a memory, and a memory apparatus that are capable of providing a memory cell structure of an MRAM, which reduces resistance of drawn wiring to be connected to an MTJ, reduces an area of a memory cell, and avoids performance degradation of the MTJ due to heat. A memory cell includes: a transistor that uses a first diffusion layer formed in a bottom portion of a concave portion formed by processing a silicon substrate into a groove shape, and a second diffusion layer formed in upper end portions of two opposing sidewall portions of the concave portion, to form channels at portions between the first diffusion layer and the second diffusion layer in the two sidewall portions; and a memory element that is disposed below the first diffusion layer. The first diffusion layer is electrically connected to the memory element via a contact formed after the silicon substrate is thinned.

Abstract: A semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is formed to cover one main surface side of the semiconductor layer, electrodes that are disposed to face the semiconductor elements and the connection regions via the insulation film, and contacts that penetrate through the insulation film to be selectively formed in portions according to necessity among portions that connect the semiconductor elements or the connection regions to the electrodes.

Abstract: A vehicle seat provided with a seat cushion and a seat back, wherein the seat back is provided with: a urethane pad in which the surface is covered by a trim cover; and a pressure means in which a laterally extending shaft and a pair of pressing parts in the vertical direction relative to the shaft are formed on the reverse side of the urethane pad toward the side covered by the trim cover, and a configuration is adopted such that the shaft extending in the lateral direction of the pressure means rotates or swings, thereby causing the upper-side pressing part among the upper and lower pair of pressing parts to press the upper side of the urethane pad forward and the lower-side pressing part to press the lower side of the urethane pad forward.

Abstract: A semiconductor device according to an embodiment of the present disclosure includes: a first substrate provided with an active element; and a second substrate laminated with the first substrate and electrically coupled to the first substrate, in which the second substrate is provided with a first transistor configuring a logic circuit on a first surface and with a non-volatile memory element on a second surface opposite to the first surface.

Abstract: A semiconductor device according to an embodiment of the present technology, and the semiconductor device includes: a first substrate provided with a memory array; and a second substrate that is stacked with the first substrate, and is provided with a peripheral circuit that controls operation of the memory array.

Abstract: An airbag includes a bag portion and a plain cloth portion. The bag portion is woven by double weave. The plain cloth portion is woven by plain weave at an edge of the bag portion. The bag portion and the plain cloth portion include warp threads and filling threads. The bag portion and the plain cloth portion are woven by a one piece woven method to satisfy: (1) each warp thread is not over four consecutive filling threads and each filling thread is not over four consecutive warp threads around a border between the bag portion and the plain cloth portion; and (2) every two adjacent warp threads are not over two adjacent filling threads and every two adjacent filling threads are not over two adjacent warp threads around the border.

Abstract: A semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is formed to cover one main surface side of the semiconductor layer, electrodes that are disposed to face the semiconductor elements and the connection regions via the insulation film, and contacts that penetrate through the insulation film to be selectively formed in portions according to necessity among portions that connect the semiconductor elements or the connection regions to the electrodes.

Abstract: A vehicular article-accommodating structure, includes a lid front part provided with an opening of such size as to be larger than the cross-sectional diameter of a cup but also capable of preventing tipping and falling of the cup, a link mechanism for causing the lid front part to perform a translational movement between a first position and a second position, and a lower part of a bottom part and an upper part of a bottom part for receiving the bottom surface of the cup at the first position and the second position. The second position is a high position having a height greater than that of the first position, and is a position rearward from the first position. The height of the lid front part can be changed by a prescribed distance, and the distance from the lid front part to a passenger can be reduced by a prescribed distance.

Abstract: Provided is a vehicle seat (1) capable of facilitating the mounting of a cover (30). The cover (30) of a seat cushion (2) is configured such that a upper portion cover (31) is disposed on the upper surface side of the seat cushion (2), a front portion cover (33) extends from the front edge of the upper portion cover (31) to the rear surface side of the seat cushion (2), and a rear portion cover (34) extends from the rear edge of the upper portion cover (31) to the rear surface side of the seat cushion (2). A first link portion (44) which detachably couples the rear edge of the front portion cover (33) and the front edge of the rear portion cover (34) to each other contacts a lower portion pad (22) of a cushion pad (20).

Abstract: An airbag includes a bag and a tether. The bag includes a first woven fabric layer and a second woven fabric layer that are opposite each other and form a double woven fabric member produced with a one-piece weaving procedure. The tether includes a first tether thread and a first anchor thread. The first tether thread is one of the warp threads and the weft threads included in the first and second woven fabric layers and runs out from the second woven fabric layer and runs back again into the second woven fabric layer. The first anchor thread is another one of the warp threads and the weft threads included in the first and second woven fabric layers and the first tether thread is hooked on the first anchor thread so as to be pulled from two directions symmetrically by the first tether thread when the bag inflates.

Abstract: A vehicle seat is provided with a seat cushion and a seat back. The seat back is provided with a resin frame at least a part of the rear surface side of which is exposed; a pad material disposed on the resin frame; a trim cover for covering the pad material; and a resin hook mounted to an end of the trim cover. The resin frame has a turned-back end formed by turning back outward in a U shape an end of the resin frame. The resin hook is engaged with the turned-back end. The resin hook has a protrusion at the portion thereof which is located within the turned-back end.

Abstract: A semiconductor device including a transistor on a main surface side of a semiconductor substrate; and a resistance change element on a back-surface side of the semiconductor substrate, wherein the transistor includes a low-resistance section in the semiconductor substrate, the low-resistance section extending to the back surface of the semiconductor substrate, an insulating film is provided in contact with a back surface of the low-resistance section, the insulating film has an opening facing the low-resistance section, and the resistance change element is connected to the low-resistance section through the opening.

Abstract: A semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is formed to cover one main surface side of the semiconductor layer, electrodes that are disposed to face the semiconductor elements and the connection regions via the insulation film, and contacts that penetrate through the insulation film to be selectively formed in portions according to necessity among portions that connect the semiconductor elements or the connection regions to the electrodes.

Abstract: A semiconductor device of the technology includes a first diffusion section (22), a second diffusion section (21), a channel section (23), a gate section (24), and a stress application section (31, 32, or 33). In a semiconductor layer (10) having a groove (10A), the first diffusion section (22) is formed at or in the vicinity of a bottom of the groove (10A), the second diffusion section (21) is formed at an upper end of the groove (10A), and the channel section (23) is formed between the first diffusion section (22) and the second diffusion section (21). The gate section (24) is buried in the groove (10A) at a position opposing the channel section (23). The stress application section (31, 32, or 33) applies one of compressive stress and tensile stress to the channel section (23) in a normal direction to the semiconductor layer (10).

Abstract: A work holder includes: a first holding part having three attracting members that are arranged circumferentially apart from each other to attract an axial end face of an annular work; and a second holding part having a contacting member that is held in contact with an inner periphery or outer periphery of the work and restricts radial movement of the work.

Abstract: A semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is formed to cover one main surface side of the semiconductor layer, electrodes that are disposed to face the semiconductor elements and the connection regions via the insulation film, and contacts that penetrate through the insulation film to be selectively formed in portions according to necessity among portions that connect the semiconductor elements or the connection regions to the electrodes.

Abstract: A semiconductor device including a semiconductor substrate with a first surface and a second surface facing each other, the semiconductor substrate having an element region in which a transistor is provided on the first surface, and a separation region in which an element separating layer surrounding the element region is provided; a contact plug extending from the first surface to the second surface, in the element region of the semiconductor substrate; and an insulating film covering a periphery of the contact plug.

Abstract: [Object] In a touch screen in which an electrode portion is formed on a base film, a pattern of the electrode portion is made less visible. [Solution] A touch screen 1 includes a first base film 11, a first transparent electrode 15, a second base film 13, a second transparent electrode 17, and a second intermediate base film 21. The first transparent electrode 15 is formed on the first base film 11. The second base film 13 is placed to face the first base film 11. The second transparent electrode 17 is formed on the second base film 13. The second intermediate base film 21 has a retardation value of 3000 nm or more and is placed so that a contraction direction thereof and contraction directions of the first base film 11 and the second base film 13 are matched.

Abstract: A vehicle seat provided with a seat cushion and a seat back, wherein the seat back is provided with: a urethane pad in which the surface is covered by a trim cover; and a pressure means in which a laterally extending shaft and a pair of pressing parts in the vertical direction relative to the shaft are formed on the reverse side of the urethane pad toward the side covered by the trim cover, and a configuration is adopted such that the shaft extending in the lateral direction of the pressure means rotates or swings, thereby causing the upper-side pressing part among the upper and lower pair of pressing parts to press the upper side of the urethane pad forward and the lower-side pressing part to press the lower side of the urethane pad forward.