Abstract: The present invention provides a novel capacitor element, laminated thin-film device, and circuit wherein the capacitance dependency on voltage can be appropriately adjusted, and a technology for manufacturing such a capacitor element and laminated thin-film device. In the capacitor element that comprises a pair of electrode layers and a dielectric layer disposed between the electrode layers, a well region where an ion is implanted is disposed in the dielectric layer, and the C-V curve between the electrode layers is shifted or shifted and expanded in at least one direction of the plus direction and minus direction with respect to the voltage axis.

Abstract: The interposer includes a glass substrate 46 with first through-electrodes 47 buried in; a plurality of resin layers 68, 20, 32 supported by the glass substrate; thin film capacitors 18a, 18b buried between a first resin layer 68 of the plural resin layers and a second resin layer 20 of the plural resin layers and including the first capacitor electrodes 12a, 12b, the second capacitor electrodes 16 opposed to the first capacitor electrodes 12a, 12b, and a dielectric thin film 14 of a relative dielectric constant of 200 or above formed between the first capacitor electrode 12a, 12b and the second capacitor electrode 16, and the second through-electrodes 77a, 77b penetrating the plural resin layers 68, 20, 32, electrically connected to the first through-electrode 47 and electrically connected to the first capacitor electrode 12a, 12b or the second capacitor electrode 16.

Abstract: The present invention provides a novel capacitor element, laminated thin-film device, and circuit wherein the capacitance dependency on voltage can be appropriately adjusted, and a technology for manufacturing such a capacitor element and laminated thin-film device. In the capacitor element that comprises a pair of electrode layers and a dielectric layer disposed between the electrode layers, a well region where an ion is implanted is disposed in the dielectric layer, and the C-V curve between the electrode layers is shifted or shifted and expanded in at least one direction of the plus direction and minus direction with respect to the voltage axis.

Abstract: The interposer includes a glass substrate 46 with first through-electrodes 47 buried in; a plurality of resin layers 68, 20, 32 supported by the glass substrate; thin film capacitors 18a, 18b buried between a first resin layer 68 of the plural resin layers and a second resin layer 20 of the plural resin layers and including the first capacitor electrodes 12a, 12b, the second capacitor electrodes 16 opposed to the first capacitor electrodes 12a, 12b, and a dielectric thin film 14 of a relative dielectric constant of 200 or above formed between the first capacitor electrode 12a, 12b and the second capacitor electrode 16, and the second through-electrodes 77a, 77b penetrating the plural resin layers 68, 20, 32, electrically connected to the first through-electrode 47 and electrically connected to the first capacitor electrode 12a, 12b or the second capacitor electrode 16.

Abstract: A capacitor including a substrate; a conductive layer provided on the substrate and containing conductive particles; a valve metal sheet having a dielectric part formed throughout an entire surface of the conductive layer; a protection layer covering the valve metal sheet; a first electrode terminal electrically connected to the conductive layer and partially exposed from an external surface of the protection layer; and a second electrode terminal electrically connected to a surface of the valve metal sheet which is opposite to a surface of the valve metal sheet on which the dielectric part is provided, and the second electrode terminal partially exposed from the external surface of the protection layer; wherein the dielectric part is made of an oxide of a metallic material of the valve metal sheet, the dielectric part is formed with a corrugated surface on the conductive layer, and the conductive particles of the conductive layer are in contact with the corrugated surface of the dielectric part.

Abstract: As for electrode pads for a semiconductor integrated circuit element, some of electrode pads for signal transmission are coupled to Ti films. Others of the electrode pads for signal transmission are coupled to electrode pads through wiring routed in multilayer wiring. Electrode pads for power supply are coupled to electrode pads to which power lines at potentials different from each other are coupled through wiring. The electrode pads are also coupled to Al foils (anodes). Electrode pads for grounding are coupled to electrode pads to which ground lines are coupled through wiring. The electrode pads are also coupled to conductive polymer films (cathodes).

Abstract: A capacitor device includes a capacitor Q constituted by a lower electrode (12) formed on a substrate (10), a dielectric film (14), and an upper electrode (16); an insulating film (18) covering the capacitor Q; a first contact hole (18a) formed in the insulating film (18) on a connection portion (16a) of the upper electrode (16); an electrode pad (20) for preventing a diffusion of solder, formed in the first contact hole (18a); and a solder bump (22) electrically connected to the electrode pad (20), and the upper electrode (16) has a protrusion portion (16a) protruding from the dielectric film (14), and is connected to the first contact hole (18a) on the protrusion portion (16a).

Abstract: Recesses are formed on one surface of a substrate. A conductive film covers an inner surface of each of the recesses. This conductive film contacts a bump of a semiconductor device to be inspected and is electrically connected to the bump. It is therefore possible to prevent damages of the bump to be caused by contact of a probe pin.

Abstract: As for electrode pads for a semiconductor integrated circuit element, some of electrode pads for signal transmission are coupled to Ti films. Others of the electrode pads for signal transmission are coupled to electrode pads through wiring routed in multilayer wiring. Electrode pads for power supply are coupled to electrode pads to which power lines at potentials different from each other are coupled through wiring. The electrode pads are also coupled to Al foils (anodes). Electrode pads for grounding are coupled to electrode pads to which ground lines are coupled through wiring. The electrode pads are also coupled to conductive polymer films (cathodes).

Abstract: A manufacturing method includes forming a dielectric part by oxidizing an entire first surface of a valve metal sheet; forming a through hole in the valve metal sheet in which the dielectric part is formed; applying an adhesive conductive material to a surface of a substrate; attaching the valve metal sheet in which the through hole is formed, to the substrate so that the first surface contacts the conductive material on the substrate surface; forming a conductive layer by curing the conductive material; forming a protection layer which covers a second surface of the valve metal sheet which is opposite to the first surface of the valve metal sheet; forming openings in the protection layer, so that the conductive layer in the through hole and the second surface of the valve metal sheet are partially exposed from the openings; and filling up the openings in the protection layer with another conductive material to form electrode terminals.

Abstract: A semiconductor device is disclosed that includes an interposer and a semiconductor chip. The interposer includes a Si substrate; multiple through vias provided through an insulating material in corresponding through holes passing through the Si substrate; a thin film capacitor provided on a first main surface of the Si substrate so as to be electrically connected to the through vias; and multiple external connection terminals provided on a second main surface of the Si substrate so as to be electrically connected to the through vias. The second main surface faces away from the first main surface. The semiconductor chip is provided on one of the first main surface and the second main surface so as to be electrically connected to the through vias. The Si substrate has a thickness less than the diameter of the through holes.

Abstract: A thin-film capacitor element having two conductive films and a dielectric film sandwiched therebetween is provided above a substrate. An inorganic protective film covering the thin-film capacitor element and having a second opening exposing at least a part of the conductive films is provided. An organic protective film covering the thin-film capacitor element from above the inorganic protective film and having a first opening therein, which is larger than the second opening and exposes the second opening, is provided. Besides, a bump connected with the conductive films via the first opening and the second opening is provided.

Abstract: As for electrode pads for a semiconductor integrated circuit element, some of electrode pads for signal transmission are coupled to Ti films. Others of the electrode pads for signal transmission are coupled to electrode pads through wiring routed in multilayer wiring. Electrode pads for power supply are coupled to electrode pads to which power lines at potentials different from each other are coupled through wiring. The electrode pads are also coupled to Al foils (anodes). Electrode pads for grounding are coupled to electrode pads to which ground lines are coupled through wiring. The electrode pads are also coupled to conductive polymer films (cathodes).

Abstract: A strain sensor comprises a capacitor formed on a substrate, the capacitor having a layered structure in which a lower electrode, a metal oxide film of perovskite structure and an upper electrode are laminated consecutively on the substrate, the capacitor being adapted to be mounted upon a specimen, and a measuring circuit that measures a leakage current flowing through the capacitor between the upper electrode and the lower electrode.

Abstract: The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 with a cutting tool 12; the step of forming a seed layer 36 on the resin layer 10 by electroless plating; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10, as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.

Abstract: The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 with a cutting tool 12; the step of forming a seed layer 36 on the resin layer 10 by electroless plating; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10, as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.

Abstract: A thin film capacitor comprising a top electrode, a bottom electrode, and a dielectric film held between the top and bottom electrodes. The dielectric film is composed of at least cations Ba, Sr, and Ti and anion O. The concentration of Sr, Ti, and O ions are uniform along the growth direction of the dielectric film while the concentration of the Ba cation is non-uniform along the growth direction such that a reduced Ba-I region in which the average concentration of perovskite type Ba cations (Ba-I) is less than the average concentration of non-perovskite type Ba cations (Ba-II) exists at or near the boundary between at least one of the top and bottom electrodes, with ratio R=(atm % Ba-I)/[(atm % Ba-I)+(atm % Ba-II)] within a range of 0.1<R<0.2.

Abstract: A method for fabricating an interposer includes: forming on one primary surface of a first substrate a thin-film capacitor including a first capacitor electrode, a crystalline capacitor dielectric film formed on the first electrode and a second capacitor electrode formed on the dielectric film; and forming on the primary surface of the first substrate and the capacitor a first layer as semi-cured, and a first partial electrode to be a part of a through-electrode, buried in the first resin layer and electrically connected to the first electrode or the second electrode.

Abstract: A semiconductor apparatus comprises a support substrate having through holes filles with conductor adapted to a first pitch; a capacitor formed on or above said support substrate; a wiring layer formed on or above said support substrate, leading some of said through holes filles with conductor upwards through said capacitor, having branches, and having wires of a second pitch different from said first pitch; and plural semiconductor elements disposed on or above said wiring layer, having terminals adapted to the second pitch, and connected with said wiring layer via said terminals. A semiconductor apparatus, in which semiconductor elements having a narrow terminal pitch, a support having through wires at a wider pitch, and a capacitor are suitably electrically connected to realize the decoupling function with reduced inductance and large capacitance.

Abstract: As for electrode pads for a semiconductor integrated circuit element, some of electrode pads for signal transmission are coupled to Ti films. Others of the electrode pads for signal transmission are coupled to electrode pads through wiring routed in multilayer wiring. Electrode pads for power supply are coupled to electrode pads to which power lines at potentials different from each other are coupled through wiring. The electrode pads are also coupled to Al foils (anodes). Electrode pads for grounding are coupled to electrode pads to which ground lines are coupled through wiring. The electrode pads are also coupled to conductive polymer films (cathodes).