Abstract: Provided is a Pd coated Cu bonding wire for a semiconductor device capable of sufficiently obtaining bonding reliability of a ball bonded portion in a high temperature environment of 175° C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases. The bonding wire for a semiconductor device comprises a Cu alloy core material; and a Pd coating layer formed on a surface of the Cu alloy core material; and contains 0.03 to 2% by mass in total of one or more elements selected from Ni, Rh, Ir and Pd in the bonding wire and further 0.002 to 3% by mass in total of one or more elements selected from Li, Sb, Fe, Cr, Co, Zn, Ca, Mg, Pt, Sc and Y. The bonding wire can be sufficiently obtained bonding reliability of a ball bonded portion in a high temperature environment of 175° C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases by being used.

Abstract: A data processing apparatus includes a memory configured to store a bit array including a first Bloom filter associating with a first subset containing a data element matching a first classification condition and a second Bloom filter associating with a second subset containing a data element matching a second classification condition, and a processor configured to, when a first data element to be a search target is inputted, determine whether the same data element as the first data element is present in the first subset by using the first Bloom filter, determine whether the same data element as the first data element is present in the second data subset by using the second Bloom filter, and when all the data elements contained in the first subset are deleted, delete the first Bloom filter from the bit array.

Abstract: The present invention has as its object the provision of a bonding wire for semiconductor devices mainly comprised of Ag, in which bonding wire for semiconductor devices, the bond reliability demanded for high density mounting is secured and simultaneously a sufficient, stable bond strength is realized at a ball bond, no neck damage occurs even in a low loop, the leaning characteristic is excellent, and the FAB shape is excellent. To solve this problem, the bonding wire for semiconductor devices according to the present invention contains one or more of Be, B, P, Ca, Y, La, and Ce in a total of 0.031 at % to obtain a 0.180 at %, further contains one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %, and has a balance of Ag and unavoidable impurities.

Abstract: There is provided a metal-coated Al bonding wire which can provide a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the metal-coated Al bonding wire is operated. The bonding wire includes a core wire of Al or Al alloy, and a coating layer of Ag, Au or an alloy containing them formed on the outer periphery of the core wire, and the bonding wire is characterized in that when measuring crystal orientations on a cross-section of the core wire in a direction perpendicular to a wire axis of the bonding wire, a crystal orientation <111> angled at 15 degrees or less to a wire longitudinal direction has a proportion of 30 to 90% among crystal orientations in the wire longitudinal direction. Preferably, the surface roughness of the wire is 2 ?m or less in terms of Rz.

Abstract: There is provided an Al bonding wire which can provide a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The bonding wire is composed of Al or Al alloy, and is characterized in that an average crystal grain size in a cross-section of a core wire in a direction perpendicular to a wire axis of the bonding wire is 0.01 to 50 ?m, and when measuring crystal orientations on the cross-section of the core wire in the direction perpendicular to the wire axis of the bonding wire, a crystal orientation <111> angled at 15 degrees or less to a wire longitudinal direction has a proportion of 30 to 90% among crystal orientations in the wire longitudinal direction.

Abstract: Bonding wire for semiconductor devices contains one or more of Be, B, P, Ca, Y, La, and Ce in a total of 0.031 at % to obtain a 0.180 at %, further contains one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %, and has a balance of Ag and unavoidable impurities. Due to this, it is possible to obtain a bonding wire for semiconductor devices sufficiently forming an intermetallic compound layer at a ball bond interface to secure the bond strength of the ball bond, not causing neck damage even in a low loop, having a good leaning characteristic, and having a good FAB shape.

Abstract: An information processing device includes a processor. The processor configured to extract part of data from estimation target data as a plurality of pieces of sample data and manage a number of duplications of the extracted plurality of pieces of sample data, classify the plurality of pieces of sample data into a first group and a second group based on the number of duplications, the first group having a number of duplications equal to or less that a predetermined number, the second group having a number of duplications more than a predetermined number, specify a first deduplication rate for sample data classified into the first group, specify a second deduplication rate for sample data classified into the second group, and specify a deduplication rate of the estimation target data based on the first deduplication rate and the second deduplication rate.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate and memory stack structures extending through the alternating stack. Each of the electrically conductive layers includes a stack of a compositionally graded diffusion barrier and a metal fill material portion, and the compositionally graded diffusion barrier includes a substantially amorphous region contacting the interface between the compositionally graded diffusion barrier and a substantially crystalline region that is spaced from the interface by the amorphous region. The substantially crystalline region effectively blocks atomic diffusion, and the amorphous region induces formation of large grains during deposition of the metal fill material portions.

Abstract: An oscillator circuit includes a circuit for oscillation that oscillates a resonator and outputs an oscillation signal, a temperature sensing element that outputs a temperature detection signal, an analog/digital conversion circuit that converts the temperature detection signal into a temperature code which is a digital signal and converts a power supply voltage into a power supply voltage code which is a digital signal, and a digital signal processing circuit that generates a correction code based on the power supply voltage code, and generates a temperature compensation code for compensating frequency-temperature characteristics of the oscillation signal based on the temperature code and the correction code.

Abstract: A circuit apparatus includes an oscillation circuit that causes a resonator to oscillate to produce an oscillation signal, an oven control circuit that controls a heater provided in correspondence with the resonator, a non-volatile memory that stores control data, a holding circuit that holds the control data transferred from the non-volatile memory, and a processing circuit that carries out a process based on the control data held in the holding circuit. After a power source voltage is supplied, the processing circuit carries out the process of transferring the control data from the non-volatile memory to the holding circuit, and after the transfer of the control data is completed, the processing circuit causes based on a data transfer end signal the oven control circuit to start operating.

Abstract: A data processing apparatus includes a memory configured to store a bit array including a first Bloom filter associating with a first subset containing a data element matching a first classification condition and a second Bloom filter associating with a second subset containing a data element matching a second classification condition, and a processor configured to, when a first data element to be a search target is inputted, determine whether the same data element as the first data element is present in the first subset by using the first Bloom filter, determine whether the same data element as the first data element is present in the second data subset by using the second Bloom filter, and when all the data elements contained in the first subset are deleted, delete the first Bloom filter from the bit array.

Abstract: A process for reducing amount of transmission of data to/from an external storage is performed in a computer. The process includes: storing a plurality of data sets by deduplicating a plurality in the external storage, wherein two or more data sets selected in order generated are collected in an object; determining necessity/unnecessity of defragmentation in units of object group in which two or more objects are collected in order generated; when determining to execute defragmentation, executing first defragmentation processing of acquiring all of the objects included in the object group as first objects from the external storage, combining valid data set having a number of references of 1 or more included in the first objects based on the order generated and the number of references to regenerate one or more second object, and storing the second object in place of the first objects in the external storage.

Abstract: The present invention provides a bonding wire for a semiconductor device, where the bonding wire can inhibit wear of capillary. In a Cu alloy bonding wire for a semiconductor device, a total of abundance ratios of a crystal orientations <110> and <111> having an angular difference of 15 degrees or less from a direction perpendicular to one plane including a wire center axis is to crystal orientations on a wire surface 40% or more and 90% or less, in average area percentage.

Abstract: It is an object to provide a Cu alloy bonding wire for a semiconductor device that can satisfy required performance in high-density LSI applications. In the Cu alloy bonding wire for a semiconductor device according to the present invention, each of abundance ratios of crystal orientations <100>, <110> and <111> having an angular difference of 15 degrees or less from a direction perpendicular to one plane including a wire center axis out of crystal orientations on a wire surface is 3% or more and less than 27% in average area percentage.

Abstract: A selective emitter exhibiting heat resistance up to 1000° C., comprising a metal body, a first dielectric layer provided on one surface of the metal body, a composite layer provided on another surface of the first dielectric layer at an opposite side to the metal body side, and a second dielectric layer provided on another surface of the composite layer at an opposite side to the first dielectric layer, the composite layer being a layer provided with a metal or semiconductor dispersed in an oxide of the metal or the semiconductor.

Abstract: Provided is a composite ceramic layered body, including: a substrate; and a composite ceramic that coats the substrate, the composite ceramic including a nitride phase and an oxide phase having an elastic modulus that differs from an elastic modulus of the nitride phase by 10% or more. The composite ceramic includes, among the nitride phase and the oxide phase, a first phase that occupies a largest area ratio, and a toughening phase that occupies an area ratio of 1% or more and has a largest difference in elastic modulus from an elastic modulus of the first phase. In a case in which the first phase is the nitride phase, the toughening phase is the oxide phase, and in a case in which the first phase is the oxide phase, the toughening phase is the nitride phase.

Abstract: A circuit apparatus includes an oscillation circuit that causes a resonator to oscillate to produce an oscillation signal, an oven control circuit that controls a heater provided in correspondence with the resonator, a non-volatile memory that stores control data, a holding circuit that holds the control data transferred from the non-volatile memory, and a processing circuit that carries out a process based on the control data held in the holding circuit. After a power source voltage is supplied, the processing circuit carries out the process of transferring the control data from the non-volatile memory to the holding circuit, and after the transfer of the control data is completed, the processing circuit causes based on a data transfer end signal the oven control circuit to start operating.

Abstract: There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices. The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 ?m.

Abstract: The present invention provides a bonding wire for a semiconductor device suitable for cutting-edge high-density LSIs and on-vehicle LSIs by improving the formation rate of Cu—Al IMC in ball bonds. A bonding wire for a semiconductor device contains Pt of 0.1 mass % to 1.3 mass %, at least one dopant selected from a first dopant group consisting of In, Ga, and Ge, for a total of 0.05 mass % to 1.25 mass %, and a balance being made up of Cu and incidental impurities.

Abstract: An information processing apparatus includes: a memory; and a processor coupled to the memory and configured to: each time when receiving a write request of write data, divide the write data into a plurality of unit bit strings having a fixed size; calculate a complexity of a data value indicated by each of the plurality of unit bit strings; determine a division position in the write data based on a variation amount of the complexity; divide the write data into a plurality of chunks by dividing the write data at the division position; and store data of the plurality of chunks in a storage device while performing deduplication.