Abstract: A bonding wire for a semiconductor device, which is suitable for on-vehicle devices bonding wire, has excellent capillary wear resistance and surface flaw resistance while ensuring high bonding reliability and further satisfies overall performance including ball formability and wedge bondability, the bonding wire including: a Cu alloy core material; a Pd coating layer formed on a surface of the Cu alloy core material; and a Cu surface layer formed on a surface of the Pd coating layer, in which the bonding wire for semiconductor device contains Ni, a concentration of the Ni in the bonding wire is 0.1 to 1.2 wt. %, the Pd coating layer is 0.015 to 0.150 ?m in thickness, and the Cu surface layer is 0.0005 to 0.0070 ?m in thickness.

Abstract: The present invention has as its object the provision of a bonding wire for semiconductor devices mainly comprised of Ag, in which bonding wire for semiconductor devices, the bond reliability demanded for high density mounting is secured and simultaneously a sufficient, stable bond strength is realized at a ball bond, no neck damage occurs even in a low loop, the leaning characteristic is excellent, and the FAB shape is excellent. To solve this problem, the bonding wire for semiconductor devices according to the present invention contains one or more of Be, B, P, Ca, Y, La, and Ce in a total of 0.031 at % to obtain a 0.180 at %, further contains one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %, and has a balance of Ag and unavoidable impurities.

Abstract: A bonding wire includes a Cu alloy core material, and a Pd coating layer formed on the Cu alloy core material. The bonding wire contains at least one element selected from Ni, Zn, Rh, In, Ir, and Pt. A concentration of the elements in total relative to the entire wire is 0.03% by mass or more and 2% by mass or less. When measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, a crystal orientation <100> angled at 15 degrees or less to a wire axis direction has a proportion of 50% or more among crystal orientations in the wire axis direction. An average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire is 0.9 ?m or more and 1.3 ?m or less.

Abstract: An alternating stack of insulating layers and electrically conductive layers is formed over a substrate. Sidewalls of the electrically conductive layers are laterally recessed to form laterally recessed regions. After formation of a conformal barrier material layer in the laterally recessed regions and on the sidewalls of the insulating layers, an amorphous precursor memory material layer is deposited in lateral cavities and over the conformal barrier material layer. An anneal process is performed to selectively crystallize portions of the amorphous precursor memory material layer in the lateral cavities into crystalline memory material portions while not crystallizing portions of the amorphous precursor memory material outside the lateral cavities. Remaining amorphous portions of the amorphous precursor memory material layer are removed selective to the crystalline memory material portions. A vertical conductive line is formed on the crystalline memory material portions.

Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 ?m. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

Abstract: The present invention provides a ball forming method for forming a ball portion at a tip of a bonding wire which includes a core material mainly composed of Cu, and a coating layer mainly composed of Pd and formed over a surface of the core material, wherein the ball portion is formed in non-oxidizing atmosphere gas including hydrocarbon which is gas at room temperature and atmospheric pressure, the method being capable of improving Pd coverage on a ball surface in forming a ball at a tip of the Pd-coated Cu bonding wire.

Abstract: A method is provided that includes forming a word line above a substrate, the word line disposed in a first direction, forming a bit line above the substrate, the bit line disposed in a second direction perpendicular to the first direction, forming a nonvolatile memory material between the word line and the bit line by selectively forming a conductive oxide material layer adjacent the word line, and forming a semiconductor material layer adjacent the bit line, and forming a memory cell comprising the nonvolatile memory material at an intersection of the bit line and the word line.

Abstract: The present invention provide a ferritic stainless steel foil high in stretch-expand formability and further small in anisotropy of deformation with respect to stretch-expand forming even with ultrathin steel foil with a thickness of 60 ?m or less. The present invention is a ferritic stainless steel foil having a thickness of 5 ?m to 60 ?m, wherein a recrystallization rate of said stainless steel foil is 90% to 100%, and in an orientation distribution function obtained by analysis of a crystalline texture of said stainless steel foil, when a Euler angle ?2 is 45°±10°, at the plane expressed by a Euler angle ? of 53.4°±10°, the maximum peak strength ratio in the peak strength ratios shown by orientations corresponding to the Euler angle ?1 is 25 or less, where the Euler angle ?1 is 0 to 90°.

Abstract: A virtualization controller identifies a node that manages a segment to be accessed, and instructs the node to access the segment. A mirror controller of the node instructed to access the segment writes data in the segment managed by the node and in a segment having a mirror relation with the segment managed by the node.

Abstract: Provided is an austenitic stainless steel foil that demonstrates a high degree of stretch formability and little deformation anisotropy with respect to stretch forming despite having a sheet thickness of 60 ?m or less. The austenitic stainless steel foil of the present invention has a sheet thickness of 5 ?m to 60 ?m, a recrystallization rate of 90% to 100%, and a texture in which the total of the area ratio of a crystal orientation in which the difference in orientation from the {112}<111> orientation is within 10°, the area ratio of a crystal orientation in which the difference in orientation from the {110}<112> orientation is within 10°, and the area ratio of a crystal orientation in which the difference in orientation from the {110}<001> orientation is within 10°, in a measuring field thereof, is 20% or less.

Abstract: The present invention provide a ferritic stainless steel foil having a high thickness precision even with a thickness 60 ?m or less ultrathin stainless steel foil and simultaneously having a plastic deformation ability and good elongation at break, that is, having a good press-formability (deep drawing ability). The present invention is a stainless steel foil having a thickness of 5 ?m to 60 ?m, wherein a recrystallization ratio of said stainless steel foil is 90% to 100%, a surface layer of said stainless steel foil has a nitrogen concentration of 1.0 mass % or less, three or more crystal grains are contained in the thickness direction of said stainless steel foil, an average crystal grain diameter “d” of said crystal grains is 1 ?m to 10 ?m, and, when said thickness is “t” (?m), an area ratio of crystal grains having a crystal grain diameter of t/3 (?m) or more is 20% or less.

Abstract: There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices. The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains In of 0.011 to 1.2% by mass and has the Pd coating layer of a thickness of 0.015 to 0.150 ?m. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material contains one or more elements of Pt, Pd, Rh and Ni in an amount, for each element, of 0.05 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 175° C. or more.

Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof. Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation <100> angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 ?m provides a strength ratio of 1.6 or less.

Abstract: A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6: Strength ratio=ultimate strength/0.2% offset yield strength.

Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 ?m. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

Abstract: The present invention provides a ball forming method for forming a ball portion at a tip of a bonding wire which includes a core material mainly composed of Cu, and a coating layer mainly composed of Pd and formed over a surface of the core material, wherein the ball portion is formed in non-oxidizing atmosphere gas including hydrocarbon which is gas at room temperature and atmospheric pressure, the method being capable of improving Pd coverage on a ball surface in forming a ball at a tip of the Pd-coated Cu bonding wire.

Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 ?m. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

Abstract: A conductive joining material and conductive joined structure for joining two joining members by a joining layer using metal nanoparticles at the time of which even if there is a difference in the amounts of heat expansion due to a difference in linear thermal expansion coefficients between these two joining members and further use at a high temperature is sought, it is possible to adjust the amount of heat expansion of the joining layer to a suitable value between the two joining members to ease the thermal stress occurring at the joining layer and possible to sufficiently hold the joint strength between the two joining members are provided.

Abstract: According to this invention, an oriented copper plate which has a highly developed cube texture and has strength and breaking elongation greater than those of a conventional material having a cube texture, a copper-clad laminate, a flexible circuit board that is excellent in terms of folding flexibility, and an electronic device are provided, and a process for producing the oriented copper plate is established. This invention relates: an oriented copper plate, which contains 0.03% by mass to 1.0% by mass of Cr, the remainder of which is composed of copper and inevitable impurities, wherein the copper plate has a <100> main orientation so that the area percentage of a <100> preferred orientation region is not less than 60.

Abstract: The present invention provides a bonding wire capable of simultaneously satisfying ball bonding reliability and wedge bondability required of bonding wires for memories, the bonding wire including a core material containing one or more of Ga, In, and Sn for a total of 0.1 to 3.0 at % with a balance being made up of Ag and incidental impurities; and a coating layer formed over a surface of the core material, containing one or more of Pd and Pt, or Ag and one or more of Pd and Pt, with a balance being made up of incidental impurities, wherein the coating layer is 0.005 to 0.070 ?m in thickness.