Abstract: It is an object to provide a Cu alloy bonding wire for a semiconductor device that can satisfy required performance in high-density LSI applications. In the Cu alloy bonding wire for a semiconductor device according to the present invention, each of abundance ratios of crystal orientations <100>, <110> and <111> having an angular difference of 15 degrees or less from a direction perpendicular to one plane including a wire center axis out of crystal orientations on a wire surface is 3% or more and less than 27% in average area percentage.

Abstract: A ceramic laminate improving the mechanical characteristics of a composite ceramic layer which has excellent thermal fatigue resistance, thermal conductivity, and insulation ability and having excellent durability and heat dissipation and insulation ability and a ceramic insulating substrate and a method of production of a ceramic laminate are provided. In a cross-section perpendicular to the bonding interfaces, the average size of the second phase particles 3 is 0.02 ?m to 0.3 ?m and the average value of the ratio of the long axis and short axis of an equivalent ellipse when viewing a second phase particle 3 as an ellipse is 2 to 10. Further, 60% or more of the number of the second phase particles 3 has an orientation angle of 30° or less while the average orientation angle is 5° to 35°.

Abstract: The present invention provides a ceramic laminate having excellent mechanical properties, heat dissipation property, insulating property, heat resistance and anti-reactivity, and particularly an insulative heat dissipating body having an excellent thermal cycle reliability and a high withstand voltage. The ceramic laminate 1 according to the present invention is a ceramic laminate in which a ceramic film 3 is formed on a metal layer 2, wherein the ceramic film 3 has a minimum film thickness of 1 ?m or more, contains silicon nitride and inevitable impurities, and has silicon nitride crystal grains having an average grain size of 300 nm or less in the film thickness direction and an average grain size of 500 nm or less in the in-plane direction.

Abstract: Provided is a Pd coated Cu bonding wire for a semiconductor device capable of sufficiently obtaining bonding reliability of a ball bonded portion in a high temperature environment of 175° C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases. The bonding wire for a semiconductor device comprises a Cu alloy core material; and a Pd coating layer formed on a surface of the Cu alloy core material; and contains 0.03 to 2% by mass in total of one or more elements selected from Ni, Rh, Ir and Pd in the bonding wire and further 0.002 to 3% by mass in total of one or more elements selected from Li, Sb, Fe, Cr, Co, Zn, Ca, Mg, Pt, Sc and Y. The bonding wire can be sufficiently obtained bonding reliability of a ball bonded portion in a high temperature environment of 175° C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases by being used.

Abstract: The present invention provides a ferritic stainless steel foil high in stretch-expand formability and further small in anisotropy of deformation with respect to stretch-expand forming even with ultrathin steel foil with a thickness of 60 ?m or less. The ferritic stainless steel foil has a thickness of 5 ?m to 60 ?m, wherein a recrystallization rate of the stainless steel foil is 90% to 100%, and in an orientation distribution function obtained by analysis of a crystalline texture of the stainless steel foil, when a Euler angle ?2 is 45°±10°, at a plane expressed by a Euler angle ? of 53.4°±10°, a maximum peak strength ratio in peak strength ratios shown by orientations corresponding to a Euler angle ?1 is 25 or less, where the Euler angle ?1 is 0 to 90°. The ferritic stainless steel foil may be laminated with a resin film and is useful for producing a battery case.

Abstract: The present invention provides a bonding wire capable of simultaneously satisfying ball bonding reliability and wedge bondability required of bonding wires for memories, the bonding wire including a core material containing one or more of Ga, In, and Sn for a total of 0.1 to 3.0 at % with a balance being made up of Ag and incidental impurities; and a coating layer formed over a surface of the core material, containing one or more of Pd and Pt, or Ag and one or more of Pd and Pt, with a balance being made up of incidental impurities, wherein the coating layer is 0.005 to 0.070 ?m in thickness.

Abstract: An oscillator circuit includes a circuit for oscillation that oscillates a resonator and outputs an oscillation signal, a temperature sensing element that outputs a temperature detection signal, an analog/digital conversion circuit that converts the temperature detection signal into a temperature code which is a digital signal and converts a power supply voltage into a power supply voltage code which is a digital signal, and a digital signal processing circuit that generates a correction code based on the power supply voltage code, and generates a temperature compensation code for compensating frequency-temperature characteristics of the oscillation signal based on the temperature code and the correction code.

Abstract: In a copper alloy bonding wire for semiconductor devices, the bonding longevity of a ball bonded part under high-temperature and high-humidity environments is improved. The copper alloy bonding wire for semiconductor devices includes in total 0.03% by mass or more to 3% by mass or less of at least one or more kinds of elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (first element), with the balance Cu and inevitable impurities. The inclusion of a predetermined amount of the first element suppresses production of an intermetallic compound susceptible to corrosion under high-temperature and high-humidity environments at the wire bonding interface and improves the bonding longevity of a ball bonded part.

Abstract: A storing unit stores a data set including a plurality of data elements and a first Bloom filter used to determine whether a query-target data element is present in the data set. A calculating unit deletes, when some data elements are deleted, a first bit array from the first Bloom filter. The first bit array has the number of bits corresponding to the number of deleted data elements. When a query-target first data element is entered, the calculating unit adds a second bit array temporarily to a second Bloom filter obtained by deleting the first bit array. The second bit array has the same number of bits as the first bit array, with all bits set to a specific value. Using the second Bloom filter, the calculating unit determines whether the first data element is present in the data set, from which some data elements have been deleted.

Abstract: The present invention provide a ferritic stainless steel foil having a high thickness precision even with a thickness 60 ?m or less ultrathin stainless steel foil and simultaneously having a plastic deformation ability and good elongation at break, that is, having a good press-formability (deep drawing ability). The present invention is a stainless steel foil having a thickness of 5 ?m to 60 ?m, wherein a recrystallization ratio of said stainless steel foil is 90% to 100%, a surface layer of said stainless steel foil has a nitrogen concentration of 1.0 mass % or less, three or more crystal grains are contained in the thickness direction of said stainless steel foil, an average crystal grain diameter “d” of said crystal grains is 1 ?m to 10 ?m, and, when said thickness is “t” (?m), an area ratio of crystal grains having a crystal grain diameter of t/3 (?m) or more is 20% or less.

Abstract: The present invention provides a Cu alloy bonding wire for a semiconductor device, where the bonding wire can satisfy requirements of high-density LSI applications. In the Cu alloy bonding wire for a semiconductor device, the abundance ratio of a crystal orientation <110> having an angular difference of 15 degrees or less from a direction perpendicular to one plane including a wire center axis to crystal orientations on a wire surface is 25% or more and 70% or less in average area percentage.

Abstract: A circuit device includes a control voltage input terminal to which a control voltage is inputted, an A/D conversion circuit A/D-converting the control voltage to generate control voltage data and A/D-converting a temperature detection voltage from a temperature sensor to generate temperature detection data, a processing circuit generating temperature compensation data of an oscillation frequency based on the temperature detection data and performing addition processing of the temperature compensation data and the control voltage data to generate frequency control data of the oscillation frequency, and an oscillation signal generation circuit generating an oscillation signal of the oscillation frequency set by the frequency control data, using the frequency control data and a resonator.

Abstract: The present invention provides a bonding wire for a semiconductor device, where the bonding wire can inhibit wear of capillary. In a Cu alloy bonding wire for a semiconductor device, a total of abundance ratios of a crystal orientations <110> and <111> having an angular difference of 15 degrees or less from a direction perpendicular to one plane including a wire center axis is to crystal orientations on a wire surface 40% or more and 90% or less, in average area percentage.

Abstract: A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6: Strength ratio=ultimate strength/0.2% offset yield strength.

Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

Abstract: The present invention provides a Cu alloy bonding wire for a semiconductor device, where the bonding wire can satisfy requirements of high-density LSI applications. In the Cu alloy bonding wire for a semiconductor device, the abundance ratio of a crystal orientation <110> having an angular difference of 15 degrees or less from a direction perpendicular to one plane including a wire center axis to crystal orientations on a wire surface is 25% or more and 70% or less in average area percentage.

Abstract: A selective emitter exhibiting heat resistance up to 1000° C., comprising a metal body, a first dielectric layer provided on one surface of the metal body, a composite layer provided on another surface of the first dielectric layer at an opposite side to the metal body side, and a second dielectric layer provided on another surface of the composite layer at an opposite side to the first dielectric layer, the composite layer being a layer provided with a metal or semiconductor dispersed in an oxide of the metal or the semiconductor.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate and memory stack structures extending through the alternating stack. Each of the electrically conductive layers includes a stack of a compositionally graded diffusion barrier and a metal fill material portion, and the compositionally graded diffusion barrier includes a substantially amorphous region contacting the interface between the compositionally graded diffusion barrier and a substantially crystalline region that is spaced from the interface by the amorphous region. The substantially crystalline region effectively blocks atomic diffusion, and the amorphous region induces formation of large grains during deposition of the metal fill material portions.

Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof. Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation <100> angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 ?m provides a strength ratio of 1.6 or less.

Abstract: A ceramic laminate improving the mechanical characteristics of a composite ceramic layer which has excellent thermal fatigue resistance, thermal conductivity, and insulation ability and having excellent durability and heat dissipation and insulation ability and a ceramic insulating substrate and a method of production of a ceramic laminate are provided. In a cross-section perpendicular to the bonding interfaces, the average size of the second phase particles 3 is 0.02 ?m to 0.3 ?m and the average value of the ratio of the long axis and short axis of an equivalent ellipse when viewing a second phase particle 3 as an ellipse is 2 to 10. Further, 60% or more of the number of the second phase particles 3 has an orientation angle of 30° or less while the average orientation angle is 5° to 35°.