Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

Abstract: There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing either or both of Pd and Pt in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition.

Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof. Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation <100> angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 ?m provides a strength ratio of 1.6 or less.

Abstract: A bonding wire for a semiconductor device, which is suitable for on-vehicle devices bonding wire, has excellent capillary wear resistance and surface flaw resistance while ensuring high bonding reliability and further satisfies overall performance including ball formability and wedge bondability, the bonding wire including: a Cu alloy core material; a Pd coating layer formed on a surface of the Cu alloy core material; and a Cu surface layer formed on a surface of the Pd coating layer, in which the bonding wire for semiconductor device contains Ni, a concentration of the Ni in the bonding wire is 0.1 to 1.2 wt. %, the Pd coating layer is 0.015 to 0.150 ?m in thickness, and the Cu surface layer is 0.0005 to 0.0070 ?m in thickness.

Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

Abstract: In an information processing system, a first information processing apparatus records, each time a file is updated, attribute information of the updated file and map information indicating updated chunks of the updated file, so as to create a change log indicating updates of a plurality of files, and then sets information indicating a generation for the change log. The first information processing apparatus sends the change log to a management apparatus connected to a storage device. A second processing apparatus obtains the change log from the management apparatus, and recognizes the plurality of files updated, with reference to the change log in order of generation.

Abstract: There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing either or both of Pd and Pt in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition.

Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

Abstract: A circuit device includes a control voltage input terminal to which a control voltage is inputted, an A/D conversion circuit A/D-converting the control voltage to generate control voltage data and A/D-converting a temperature detection voltage from a temperature sensor to generate temperature detection data, a processing circuit generating temperature compensation data of an oscillation frequency based on the temperature detection data and performing addition processing of the temperature compensation data and the control voltage data to generate frequency control data of the oscillation frequency, and an oscillation signal generation circuit generating an oscillation signal of the oscillation frequency set by the frequency control data, using the frequency control data and a resonator.

Abstract: The present invention provides a bonding wire for a semiconductor device suitable for cutting-edge high-density LSIs and on-vehicle LSIs by improving the formation rate of Cu—Al IMC in ball bonds. A bonding wire for a semiconductor device contains Pt of 0.1 mass % to 1.3 mass %, at least one dopant selected from a first dopant group consisting of In, Ga, and Ge, for a total of 0.05 mass % to 1.25 mass %, and a balance being made up of Cu and incidental impurities.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate and memory stack structures extending through the alternating stack. Each of the electrically conductive layers includes a stack of a compositionally graded diffusion barrier and a metal fill material portion, and the compositionally graded diffusion barrier includes a substantially amorphous region contacting the interface between the compositionally graded diffusion barrier and a substantially crystalline region that is spaced from the interface by the amorphous region. The substantially crystalline region effectively blocks atomic diffusion, and the amorphous region induces formation of large grains during deposition of the metal fill material portions.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate and memory stack structures extending through the alternating stack. Each of the electrically conductive layers includes a stack of a compositionally graded diffusion barrier and a metal fill material portion, and the compositionally graded diffusion barrier includes a substantially amorphous region contacting the interface between the compositionally graded diffusion barrier and a substantially crystalline region that is spaced from the interface by the amorphous region. The substantially crystalline region effectively blocks atomic diffusion, and the amorphous region induces formation of large grains during deposition of the metal fill material portions.

Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof. Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation <100> angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 ?m provides a strength ratio of 1.6 or less.

Abstract: The present invention provides a bonding wire which can satisfy bonding reliability, spring performance, and chip damage performance required in high-density packaging. A bonding wire contains one or more of In, Ga, and Cd for a total of 0.05 to 5 at %, and a balance being made up of Ag and incidental impurities.

Abstract: Provided is an austenitic stainless steel foil that demonstrates a high degree of stretch formability and little deformation anisotropy with respect to stretch forming despite having a sheet thickness of 60 ?m or less. The austenitic stainless steel foil of the present invention has a sheet thickness of 5 ?m to 60 ?m, a recrystallization rate of 90% to 100%, and a texture in which the total of the area ratio of a crystal orientation in which the difference in orientation from the {112}<111> orientation is within 10°, the area ratio of a crystal orientation in which the difference in orientation from the {110}<112> orientation is within 10°, and the area ratio of a crystal orientation in which the difference in orientation from the {110}<001> orientation is within 10°, in a measuring field thereof, is 20% or less.

Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

Abstract: A storing unit stores a data set including a plurality of data elements and a first Bloom filter used to determine whether a query-target data element is present in the data set. A calculating unit deletes, when some data elements are deleted, a first bit array from the first Bloom filter. The first bit array has the number of bits corresponding to the number of deleted data elements. When a query-target first data element is entered, the calculating unit adds a second bit array temporarily to a second Bloom filter obtained by deleting the first bit array. The second bit array has the same number of bits as the first bit array, with all bits set to a specific value. Using the second Bloom filter, the calculating unit determines whether the first data element is present in the data set, from which some data elements have been deleted.

Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

Abstract: A thermophotovoltaic conversion member able to selectively absorb and emit light of a short wavelength, provided with a multilayer structure of a metal region on which at least one silicide layer and a dielectric layer are alternately formed, a total number of the silicide layers and the dielectric layers being three layers to 12 layers, the multilayer structure having, in order on the metal region 1, a silicide layer B2, a dielectric layer M3, and a silicide layer M4 and the silicide layer B2 having a thickness of 5 nm to 25 nm, the dielectric layer M3 having a thickness of 10 nm to 45 nm, and the silicide layer M4 having a thickness of 2 nm to 15 nm.

Abstract: The present invention provides a ceramic laminate having excellent mechanical properties, heat dissipation property, insulating property, heat resistance and anti-reactivity, and particularly an insulative heat dissipating body having an excellent thermal cycle reliability and a high withstand voltage. The ceramic laminate 1 according to the present invention is a ceramic laminate in which a ceramic film 3 is formed on a metal layer 2, wherein the ceramic film 3 has a minimum film thickness of 1 ?m or more, contains silicon nitride and inevitable impurities, and has silicon nitride crystal grains having an average grain size of 300 nm or less in the film thickness direction and an average grain size of 500 nm or less in the in-plane direction.