Abstract: A semiconductor device includes a semiconductor package including an n-type channel normally-off transistor, a normally-on transistor, a first diode, and a Zener diode; a first terminal provided on the semiconductor package; a plurality of second terminals provided on the semiconductor package, and the second terminals being lined up in a first direction; a third terminal provided on the semiconductor package; a plurality of fourth terminals provided on the semiconductor package; and a plurality of fifth terminals provided on the semiconductor package, and the fifth terminals being lined up in the first direction.

Abstract: A positive electrode material of the present disclosure includes a positive electrode active material, a first solid electrolyte including a sulfide solid electrolyte, and a second solid electrolyte including a halide solid electrolyte. A proportion x of a volume of the second solid electrolyte to a sum of a volume of the first solid electrolyte and the volume of the second solid electrolyte satisfies 20?x?95 in percentage. The proportion x satisfies, for example, 35.2?x?76.5 in percentage.

Abstract: A hermetic compressor includes a compressor shell, a terminal provided on the compressor shell, a terminal guard erected on the compressor shell and surrounding the terminal, and a terminal cover mounted to the terminal guard and covering the terminal. A terminal chamber is defined by the compressor shell, the terminal guard, and the terminal cover. Except for at least a body of the terminal, metal portions facing the terminal chamber are generally covered with an insulator such that the metal portions are not exposed to the terminal chamber. The insulator includes an insulating portion that covers an inner surface of the terminal guard.

Abstract: A semiconductor device has a first wiring extending in a first direction on a nitride semiconductor layer. A source electrode is electrically connected to the first wiring and extends in a second direction. A drain electrode extends in the second direction and includes a first and second portion extending in the second direction, spaced from each other in the first direction. An element isolation region is in the second nitride semiconductor layer between the first and second portions. A third portion extends in the second direction on the first and second portions. A gate electrode extends in the second direction on the second nitride semiconductor layer between the source electrode and the drain electrode. The portion includes holes therein aligned with each other along the second direction with the spacing between adjacent holes in the second direction increasing with increasing distance in the second direction from the first wiring.

Abstract: A semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer provided on the first nitride semiconductor layer, the second nitride semiconductor layer having a band gap larger than the first nitride semiconductor layer, a first electrode provided on the second nitride semiconductor layer, a second electrode provided on the second nitride semiconductor layer, a first insulating film provided between the first electrode and the second electrode on the second nitride semiconductor layer, the first insulating film being in connect with the second nitride semiconductor layer and including a first insulating material, a second insulating film provided on the second nitride semiconductor layer between the first electrode and the first insulating film, on the first insulating film, and on the second nitride semiconductor layer between the first insulating film and the second electrode, the second insulating film including a second insulating material, a third electrode pro

Abstract: A vacuum pad suctions a workpiece by utilizing a vacuum pressure, and includes a support member having a vacuum passage inside, a bellows secured to the support member, and a restriction member attached to an inner side of the bellows. When the bellows is contracted, the restriction member comes into the vacuum passage.

Abstract: A semiconductor device according to embodiments includes a normally-off transistor having a first electrode, a second electrode, and a first control electrode, a normally-on transistor having a third electrode electrically connected to the second electrode, a fourth electrode, and a second control electrode, a first element having a first end portion electrically connected to the first control electrode and a second end portion electrically connected to the first electrode, and the first element including a first capacitance component; and, a second element having a third end portion electrically connected to the first control electrode and the first end portion and a fourth end portion, and the second element including a second capacitance component, wherein, when a threshold voltage of the normally-off transistor is denoted by Vth, a maximum rated gate voltage of the normally-off transistor is denoted by Vg_max, a voltage of the fourth end portion is denoted by Vg_on, the first capacitance component is deno

Abstract: Provided is a semiconductor device including a normally-off transistor having a first electrode, a second electrode, and a first control electrode, a normally-on transistor having a third electrode, a fourth electrode, and a second control electrode, a first capacitor having a first end and a second end, a Zener diode having a first anode and a first cathode, a first resistor having a third end and a fourth end, a first diode having a second anode and a second cathode, a second resistor having a fifth end and a sixth end, a second diode having a third anode and a third cathode, and a second capacitor having a seventh end and an eighth end.

Abstract: A semiconductor device has a first and a second nitride semiconductor layer and a first and a second electrode thereon. A gate electrode is between the first and second electrodes. A gate field plate is on the gate electrode. A first field plate is above a position between the gate field plate and the second electrode. A second field plate is between the first field plate and the gate field plate. A distance from the first nitride semiconductor layer to the second field plate is shorter than a distance from the first nitride semiconductor layer to the portion of the gate field plate that protrudes the most towards the second electrode. The distance from the first nitride semiconductor layer to the second field plate is shorter than a distance from the first nitride semiconductor layer to an end surface of the first field plate on a first electrode side.

Abstract: A semiconductor device includes a semiconductor package including an n-type channel normally-off transistor including a first electrode, a second electrode, and a first control electrode, a normally-on transistor including a third electrode electrically connected to the second electrode, a fourth electrode, and a second control electrode, a first diode including a first anode electrically connected to the second control electrode and a first cathode electrically connected to the third electrode, and a Zener diode including a second anode electrically connected to the first electrode and a second cathode electrically connected to the second electrode; a first terminal provided on the semiconductor package, the first terminal being electrically connected to the first electrode; a plurality of second terminals provided on the semiconductor package, the second terminals being electrically connected to the first electrode, and the second terminals being lined up in a first direction; a third terminal provided on t

Abstract: A semiconductor device includes first and second nitride semiconductor layers. The second layer on the first nitride has a first region, a second region, and a third region between the first and second regions. A first gate electrode is in the first region and extends parallel to a surface of a substrate. A first source electrode is in the first region and extends in the first direction. A second gate electrode in the second region and extends in the first direction. A second source electrode is in the second region and extends in the first direction. A drain electrode coupled to a first and a second wiring. The first wiring directly contacts the second nitride semiconductor layer in the first region. The second wiring directly contacts the second nitride semiconductor layer in the second region. An insulation material is in the third region.

Abstract: A semiconductor device according to an embodiment includes: a first nitride semiconductor layer having a first surface and a second surface; a first source electrode provided on the first surface; a first drain electrode provided on the first surface; a first gate electrode provided on the first surface between the first source electrode and the first drain electrode; a second nitride semiconductor layer having a third surface and a fourth surface, the third surface being provided on the second surface and facing the second surface, and the second nitride semiconductor layer having a smaller band gap than the first nitride semiconductor layer; and a first semiconductor device having a fifth surface provided on the fourth surface and facing the fourth surface with a size equal to or smaller than a size of the fourth surface, the first semiconductor device including a first semiconductor material having a smaller band gap than the second nitride semiconductor layer.

Abstract: A semiconductor device according to embodiments includes a normally-off transistor having a first electrode, a second electrode, and a first control electrode, a normally-on transistor having a third electrode electrically connected to the second electrode, a fourth electrode, and a second control electrode, a first element having a first end portion electrically connected to the first control electrode and a second end portion electrically connected to the first electrode, and the first element including a first capacitance component; and, a second element having a third end portion electrically connected to the first control electrode and the first end portion and a fourth end portion, and the second element including a second capacitance component, wherein, when a threshold voltage of the normally-off transistor is denoted by Vth, a maximum rated gate voltage of the normally-off transistor is denoted by Vg_max, a voltage of the fourth end portion is denoted by Vg_on, the first capacitance component is deno

Abstract: A non-contact transport device includes a deflector having a flange portion provided with a plurality of nozzle grooves extending radially outward and arranged equidistantly in the circumferential direction. The nozzle grooves are each formed to be hollowed with respect to an upper surface of the flange portion so as to have an arc-shaped cross section, and constitute lead-out channels together with a flat surface of a hollow of a body. A pressure fluid is supplied through a first port of the body into the body and flows through the plurality of nozzle grooves to a workpiece holding surface along first and second curved surfaces of the hollow. As a result, the pressure fluid flowing at high speed between the workpiece holding surface and a workpiece generates a suction force exerted toward the body side, whereby the workpiece is suctioned.

Abstract: A compressor (10) includes a casing (20), a terminal (29) protruding from the casing, a first cover (70) covering the terminal, and a second cover (50) covering the first cover.

Abstract: A suction device includes an adapter having in the interior thereof a supply passage to which a negative pressure fluid is supplied, a bellows connected to a distal end of the adapter, and a pad member disposed at a distal end of the bellows and to which a workpiece is attracted under suction. In addition, the suction device attracts the workpiece under suction by a negative pressure fluid which is supplied to the pad member through the supply passage and the bellows. An attachment which is capable of being tilted with respect to the axis of the bellows is provided in the interior of the bellows. In the attachment, a main body portion thereof is disposed in facing relation to a suction surface of a skirt, and a shaft portion is inserted into the supply passage at a time that the workpiece is attracted under suction.

Abstract: Provided is a semiconductor device including: a normally-off transistor having a first electrode, a second electrode, and a first control electrode; a normally-on transistor having a third electrode electrically connected to the second electrode, a fourth electrode, and a second control electrode; a first capacitor having a first end and a second end electrically connected to the second control electrode; a Zener diode having a first anode and a first cathode, the first anode being electrically connected to the second end and the second control electrode, and the first cathode being electrically connected to the third electrode; a first resistor having a third end and a fourth end electrically connected to the first control electrode; a first diode having a second anode and a second cathode, the second anode being electrically connected to the third end; a second resistor having a fifth end electrically connected to the second cathode and a sixth end electrically connected to the fourth end and the first cont

Abstract: A relief valve that includes a tube; a valve configured to slide along an inner wall of the tube in an axial direction, and a spring that urges the valve, wherein the valve has a hydraulic pressure receiving surface on a first axial side that is one side in the axial direction, and a spring abutment against which the spring abuts, on a second axial side opposite to the first axial side, and the tube has a discharge oil passage having an opening in the inner wall and extending through the inner wall in a radial direction.