Abstract: A tire air pressure monitoring system for a vehicle is disclosed. The tire air pressure monitoring system includes a detector configured to detect tire air pressures of tires of the vehicle; and a processing device. The processing device is configured to output a first notification that is an alarm representing a reduced tire air pressure state based on at least one of the tire air pressures less than or equal to a first threshold, detect a predetermined opportunity at which the tires can be filled with air, and output a second notification, differently from the first notification, based on a detection of the predetermined opportunity and at least one of the tire air pressures less than or equal to a second threshold but greater than the first threshold, the second threshold being greater than the first threshold.

Abstract: The present invention provides a measurement apparatus for measuring a position of a mark formed on a substrate, the apparatus including a detector configured to detect the mark to generate a detection signal, and a processor configured to process the generated detection signal to obtain a position of the mark, wherein the processor is configured to limit a range of the detection signal to be processed to obtain the position of the mark based on a statistic representing dispersion of a plurality of the position obtained with respect to a plurality of the mark.

Abstract: A tire air pressure monitoring system for a vehicle is disclosed. The tire air pressure monitoring system includes a detector configured to detect tire air pressures of tires of the vehicle; and a processing device. The processing device is configured to output a first notification that is an alarm representing a reduced tire air pressure state based on at least one of the tire air pressures less than or equal to a first threshold, detect a predetermined opportunity at which the tires can be filled with air, and output a second notification, differently from the first notification, based on a detection of the predetermined opportunity and at least one of the tire air pressures less than or equal to a second threshold but greater than the first threshold, the second threshold being greater than the first threshold.

Abstract: A semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer provided on the first nitride semiconductor layer and having a bandgap larger than a bandgap of the first nitride semiconductor layer, a gate electrode provided on the first nitride semiconductor layer, a first electrode provided on the first nitride semiconductor layer and electrically connected to the first nitride semiconductor layer, a second electrode provided on the first nitride semiconductor layer, electrically connected to the first nitride semiconductor layer, and located between the first electrode and the second electrode, a first aluminum nitride layer that provided between the gate electrode and the second electrode, and provided on the second nitride semiconductor layer, and a second aluminum nitride layer provided on the first aluminum nitride layer. The first aluminum nitride layer is crystalline. The second aluminum nitride layer is non-crystalline.

Abstract: There is provided a shaped product made of a fiber-reinforced composite material including reinforcing fibers having an average length of 5 mm or more and 100 mm or less and a thermoplastic resin, in which a volume fraction of reinforcing fibers (Vf=100×volume of reinforcing fibers/(volume of reinforcing fibers+volume of thermoplastic resin)) is 5 to 80%, grains are formed on a surface of the shaped product, and a ratio of a reinforcing fiber bundle (A) including the reinforcing fibers of a critical number of single fiber or more, the critical number defined by Formula (1), to the total amount of the reinforcing fibers is 20 Vol % or more and 99 Vol % or less: Critical number of single fiber=600/D??(1) (wherein D is an average fiber diameter (?m) of single reinforcing fiber).

Abstract: Provided is a nitride semiconductor light emitting element in which deep-level light emission is suppressed, monochromaticity is improved, and light is emitted in a high-efficiency manner. A nitride semiconductor light emitting element having a light-emitting layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, wherein the n-type nitride semiconductor layer contains AlnGa1-nN (0<n?1), and has a C concentration of 1×1017/cm3 or less.

Abstract: A linear guide device including an actuator including: a base section; a slider slidably provided to the base section; and guide sections disposed between the base section and the slider in a state that the guide sections are extending in the sliding direction of the slider. DLC films are formed on the guide sections, and the guide sections are locked to the slider such that the guide section can slide in a state that the DLC films are applying a predetermined preload with respect to the base section.

Abstract: A joining method for joining a resin member and a metal member by heating is provided. Joining of the resin member and metal member is performed by heating a joining interface of the resin member and metal member to a temperature in a range of equal to or higher than a decomposition temperature of the resin member and lower than a temperature at which gas bubbles are generated in the resin member and by cooling a surface of the resin member on the opposite side from a joining surface thereof with the metal member to a temperature that is lower than the melting point of the resin member.

Abstract: Provided is a nitride semiconductor light emitting element which has good luminous efficiency by suppressing deep-level emission and increasing the monochromaticity. A nitride semiconductor light emitting element according to the present invention comprises an active layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer. The n-type nitride semiconductor layer contains AlX1InX2GaX3N (wherein 0<X1?1, 0?X2<1, 0?X3<1, X1+X2+X3=1), and both the concentration of C contained therein and the concentration of O contained therein are less than or equal to 1×1017/cm3.

Abstract: An electric actuator such that a nut threadedly engaged with a sliding screw shaft is displaced along an axial direction under the operation of a motor, the sliding screw shaft being made of a light metal or light metal alloy. A diamond-like carbon film is formed on at least either a portion of screw threads of the nut that is located at least within three threads from a starting end in the axial direction, or screw threads of the sliding screw shaft.

Abstract: Provided is a nitride semiconductor light emitting element in which deep-level light emission is suppressed, monochromaticity is improved, and light is emitted in a high-efficiency manner A nitride semiconductor light emitting element having a light-emitting layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, wherein the n-type nitride semiconductor layer contains AlnGa1-nN (0<n?1), and has a C concentration of 1×1017/cm3 or less.

Abstract: The purpose of the present invention is to provide a semiconductor light-emitting element with further enhanced light extraction efficiency while ensuring horizontal widening of current flowing through an active layer. This method for producing a semiconductor light-emitting element according to the present invention includes: a step (a) for forming a semiconductor layer including an active layer on an upper layer of a growth substrate; a step (b) for forming a first metal layer on a top surface of the semiconductor layer; a step (c) for forming a second metal layer on a portion of a top surface of the first metal layer without preforming annealing after the step (b); and a step (d) for performing annealing after the step (c).

Abstract: A semiconductor device according to one embodiment includes an n-type first GaN-based semiconductor layer, a p-type second GaN-based semiconductor layer on the first GaN-based semiconductor layer. The second GaN-based semiconductor layer includes a low impurity concentration region and a high impurity concentration region. An n-type third GaN-based semiconductor layer is provided on the second GaN-based semiconductor layer. The device includes a gate electrode being located adjacent to the third GaN-based semiconductor layer, the low impurity concentration region, and the first GaN-based semiconductor layer intervening a gate insulating film. The device includes a first electrode on the third GaN-based semiconductor layer, a second electrode on the high impurity concentration region, and a third electrode on the opposite side of the first GaN-based semiconductor layer from the second GaN-based semiconductor layer.

Abstract: Provided is an LED element which achieves a high light extraction efficiency even at a low operation voltage and which can be manufactured by means of a simple process. The LED element has: a first semiconductor layer constituted of n-type nitride semiconductor; a light emitting layer constituted of nitride semiconductor; a second semiconductor layer formed on top of the light emitting layer and constituted of p-type nitride semiconductor; a first electrode constituted of a transparent electrode where a bottom surface thereof is in contact with a portion of an upper surface of the first semiconductor layer; and a second electrode formed on top of the second semiconductor layer. At least a region of the first semiconductor layer, which region is in contact with the first electrode, is constituted of AlnGa1-nN (0<n?1) and has an n-type impurity concentration larger than 1×1019/cm3.

Abstract: According to one embodiment, a nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a third electrode, a first insulating film and a second insulating film. The first semiconductor layer includes a nitride semiconductor. The second semiconductor layer is provided on the first layer, includes a nitride semiconductor, and includes a hole. The first electrode is provided in the hole. The second electrode is provided on the second layer. The third electrode is provided on the second layer so that the first electrode is disposed between the third and second electrodes. The first insulating film is provided between the first electrode and an inner wall of the hole and between the first and second electrodes, and is provided spaced from the third electrode. The second insulating film is provided in contact with the second layer between the first and third electrodes.

Abstract: The present invention provides a measurement apparatus for measuring a position of a mark formed on a substrate, the apparatus including a detector configured to detect the mark to generate a detection signal, and a processor configured to process the generated detection signal to obtain a position of the mark, wherein the processor is configured to limit a range of the detection signal to be processed to obtain the position of the mark based on a statistic representing dispersion of a plurality of the position obtained with respect to a plurality of the mark.

Abstract: A semiconductor device according to an embodiment includes a nitride semiconductor layer, a gate electrode provided above the nitride semiconductor layer, a source electrode provided above the nitride semiconductor layer, a drain electrode provided above the nitride semiconductor layer at a side opposite to the source electrode with respect to the gate electrode, a first silicon nitride film provided above the nitride semiconductor layer between the drain electrode and the gate electrode, and a second silicon nitride film provided between the nitride semiconductor layer and the gate electrode, an atomic ratio of silicon to nitrogen in the second silicon nitride film being lower than an atomic ratio of silicon to nitrogen in the first silicon nitride film.

Abstract: Provided is a nitride light emitting element which achieves a high light extraction efficiency even at a low operation voltage and which can be manufactured by means of a simple process. A nitride light emitting element 1 has, on a support substrate 11, an n-type layer 35, a p-type layer 31, and a light emitting layer 33 formed at a position interposed between the n-type layer 35 and the p-type layer 31. The n-type layer 35 is constituted of AlxGa1-xN (0<x?1) having a carrier concentration higher than the dopant Si concentration.

Abstract: A semiconductor device according to one embodiment includes an n-type first GaN-based semiconductor layer, a p-type second GaN-based semiconductor layer on the first GaN-based semiconductor layer. The second GaN-based semiconductor layer includes a low impurity concentration region and a high impurity concentration region. An n-type third GaN-based semiconductor layer is provided on the second GaN-based semiconductor layer. The device includes a gate electrode being located adjacent to the third GaN-based semiconductor layer, the low impurity concentration region, and the first GaN-based semiconductor layer intervening a gate insulating film. The device includes a first electrode on the third GaN-based semiconductor layer, a second electrode on the high impurity concentration region, and a third electrode on the opposite side of the first GaN-based semiconductor layer from the second GaN-based semiconductor layer.