Abstract: A semiconductor device according to one embodiment includes an n-type first GaN-based semiconductor layer, a p-type second GaN-based semiconductor layer on the first GaN-based semiconductor layer. The second GaN-based semiconductor layer includes a low impurity concentration region and a high impurity concentration region. An n-type third GaN-based semiconductor layer is provided on the second GaN-based semiconductor layer. The device includes a gate electrode being located adjacent to the third GaN-based semiconductor layer, the low impurity concentration region, and the first GaN-based semiconductor layer intervening a gate insulating film. The device includes a first electrode on the third GaN-based semiconductor layer, a second electrode on the high impurity concentration region, and a third electrode on the opposite side of the first GaN-based semiconductor layer from the second GaN-based semiconductor layer.

Abstract: A joining method for joining a resin member and a metal member by heating is provided. Joining of the resin member and metal member is performed by heating a joining interface of the resin member and metal member to a temperature in a range of equal to or higher than a decomposition temperature of the resin member and lower than a temperature at which gas bubbles are generated in the resin member and by cooling a surface of the resin member on the opposite side from a joining surface thereof with the metal member to a temperature that is lower than the melting point of the resin member.

Abstract: Disclosed is a technique on laser welding capable of achieving a desired penetration depth without an oxide film remaining in a deep portion of a molten pool. In a welding device (1) that emits a laser beam focusing on a working point (P), the laser beam has a profile similar to a profile of a superimposed laser beam at the working point. The superimposed laser beam is formed by superimposing a first laser beam and a second laser beam having a beam diameter smaller than that of the first laser beam. in the profile of the laser beam, a portion corresponding to the first laser beam has a power density allowing thermal-conduction type welding. In the profile of the laser beam, a portion corresponding to the second laser beam has a power density allowing keyhole type welding.

Abstract: According to one embodiment, a nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a third electrode, a first insulating film and a second insulating film. The first semiconductor layer includes a nitride semiconductor. The second semiconductor layer is provided on the first layer, includes a nitride semiconductor, and includes a hole. The first electrode is provided in the hole. The second electrode is provided on the second layer. The third electrode is provided on the second layer so that the first electrode is disposed between the third and second electrodes. The first insulating film is provided between the first electrode and an inner wall of the hole and between the first and second electrodes, and is provided spaced from the third electrode. The second insulating film is provided in contact with the second layer between the first and third electrodes.

Abstract: A joining method for joining a resin member and a metal member by heating is provided. Joining of the resin member and metal member is performed by heating a joining interface of the resin member and metal member to a temperature in a range of equal to or higher than a decomposition temperature of the resin member and lower than a temperature at which gas bubbles are generated in the resin member and by cooling a surface of the resin member on the opposite side from a joining surface thereof with the metal member to a temperature that is lower than the melting point of the resin member.

Abstract: A semiconductor device according to one embodiment includes an n-type first GaN-based semiconductor layer, a p-type second GaN-based semiconductor layer on the first GaN-based semiconductor layer. The second GaN-based semiconductor layer includes a low impurity concentration region and a high impurity concentration region. An n-type third GaN-based semiconductor layer is provided on the second GaN-based semiconductor layer. The device includes a gate electrode being located adjacent to the third GaN-based semiconductor layer, the low impurity concentration region, and the first GaN-based semiconductor layer intervening a gate insulating film. The device includes a first electrode on the third GaN-based semiconductor layer, a second electrode on the high impurity concentration region, and a third electrode on the opposite side of the first GaN-based semiconductor layer from the second GaN-based semiconductor layer.

Abstract: A feed screw mechanism includes a feed screw shaft connected to a drive source and formed with first screw threads on an outer circumferential surface thereof, and a displacement nut, which is screw-engaged with respect to the feed screw shaft through a plurality of balls. The displacement nut is supported with respect to a slider that makes up an electric actuator by a pair of pins. The pins are inserted and fixed in first pin holes formed in the slider, and distal end portions of the pins are inserted respectively into second pin holes formed in the displacement nut.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor layer of a first conductivity type, a first region of a second conductivity type selectively provided in a first major surface of the semiconductor layer, a second region of the second conductivity type selectively provided in the first major surface and connected to the first region, a first electrode provided in contact with the semiconductor layer and the first region, a second electrode provided in contact with the second region, and a third electrode electrically connected to a second major surface of the semiconductor layer opposite to the first major surface.

Abstract: A semiconductor device according to an embodiment includes a nitride semiconductor layer, a gate electrode provided above the nitride semiconductor layer, a source electrode provided above the nitride semiconductor layer, a drain electrode provided above the nitride semiconductor layer at a side opposite to the source electrode with respect to the gate electrode, a first silicon nitride film provided above the nitride semiconductor layer between the drain electrode and the gate electrode, and a second silicon nitride film provided between the nitride semiconductor layer and the gate electrode, an atomic ratio of silicon to nitrogen in the second silicon nitride film being lower than an atomic ratio of silicon to nitrogen in the first silicon nitride film.

Abstract: There is provided a shaped product made of a fiber-reinforced composite material including reinforcing fibers having an average length of 5 mm or more and 100 mm or less and a thermoplastic resin, in which a volume fraction of reinforcing fibers (Vf=100×volume of reinforcing fibers/(volume of reinforcing fibers+volume of thermoplastic resin)) is 5 to 80%, grains are formed on a surface of the shaped product, and a ratio of a reinforcing fiber bundle (A) including the reinforcing fibers of a critical number of single fiber or more, the critical number defined by Formula (1), to the total amount of the reinforcing fibers is 20 Vol % or more and 99 Vol % or less: Critical number of single fiber=600/D??(1) (wherein D is an average fiber diameter (?m) of single reinforcing fiber).

Abstract: Provided is a method of manufacturing a battery having an electrode module including: a positive plate having a cathode collector portion formed by attaching a lead member to a cathode substrate made of a foamed metal plate; and a cathode collector plate welded to the cathode collector portion. The method includes: a pre-welding positive plate forming process of forming a pre-welding positive plate, which is the positive plate before welding, such that the pre-welding positive plate has a projection projecting from a pre-welding cathode collector portion, which is the cathode collector portion before welding; and a welding process of melting a pre-welding cathode collector plate to weld it to the projection. In the pre-welding positive plate forming process, the projection is formed into such a shape that the condition that S?1.3W is satisfied, where W and S represent the width and the circumferential length of the projection, respectively.

Abstract: There is provided a shaped product made of a fiber-reinforced composite material including reinforcing fibers having an average fiber length of 5 to 100 mm and a thermoplastic resin. In the shaped product, a volume fraction of reinforcing fibers is 5 to 80%, a reference plane (S) and a standing plane (B) inclined at an angle of 45 to 90 degrees with respect to the reference plane are included, a ratio of an area of the standing plane (B) to an area of the reference plane (S) is 0.5 to 100, and in the fiber-reinforced composite material constituting the shaped product, a ratio of a reinforcing fiber bundle (A) including the reinforcing fibers of a critical number of single fiber or more to the total amount of the reinforcing fibers is 20 Vol % or more and 99 Vol % or less.

Abstract: An actuator is equipped with a cylinder body in the interior of which a piston is disposed for displacement therein. A piston rod connected to the piston projects outwardly to the exterior from an end of the cylinder body. A guide unit, having a guide body that is attached to the cylinder body, and a pair of guide rods, which are disposed displaceably with respect to the guide body, are disposed detachably on the cylinder body. Additionally, by mutually interconnecting the guide rods of the guide unit and the piston rod through a connecting plate, when the piston rod is displaced in an axial direction, the piston rod is guided by the pair of guide rods.

Abstract: A molded product, including a fiber-reinforced composite material containing reinforcing fibers having an average fiber length of 5 mm to 100 mm and a thermoplastic resin, wherein the molded product has thickness gradient, an amount of the thermoplastic resin is 10 to 1,000 parts by weight per 100 parts by weight of thee reinforcing fibers, and the reinforcing fibers have a fiber areal weight of from 25 g/m2 to 3,000 g/m2 and are substantially two-dimensionally randomly oriented.

Abstract: The present invention relates to a shaped product being excellent in isotropy constituted by a fiber-reinforced composite material in which discontinuous reinforcing fibers are isotropic in a plane and are two-dimensionally oriented in the thermoplastic resin, the reinforcing fibers contained in the shaped product includes a reinforcing fiber bundle (A) constituted by the reinforcing fibers of the critical single fiber number defined by formula (1) or more, a ratio of the reinforcing fiber bundle (A) to the total amount of the reinforcing fibers in the shaped product is 20 vol % or more and less than 90 vol %, and the average number (N) of the reinforcing fibers in the reinforcing fiber bundle (A) satisfies formula (2): Critical single fiber number=600/D??(1) 0.7×104/D2<N<1×105/D2??(2) wherein D is an average fiber diameter (?m) of the reinforcing fibers.

Abstract: A ball screw mechanism is equipped with a ball screw shaft formed from a metallic material, a displacement nut inserted over an outer circumferential side of the ball screw shaft, steel balls installed between a first screw groove formed on the ball screw shaft and a second screw groove formed in the displacement nut, and a pair of first and second return members, through which the steel balls are circulated between one end side and another end side of the displacement nut. The first and second return members include main body parts mounted respectively onto one end and another end of the displacement nut, and cylindrical parts that project outwardly with respect to the main body parts. A return passage, through which the steel balls are circulated, is formed inside of the main body parts and the cylindrical parts.

Abstract: In an electric actuator, a connector is coupled to one end of a screw shaft that makes up a displacement mechanism, the screw shaft being rotatably supported by first and second bearings. Further, on the other end of the screw shaft, a support ring is disposed through a holder, wherein the support ring is slidable along an inner circumferential surface of a piston rod. On the outer circumferential surface of a piston, a rotation-stopping member is provided, which includes projections thereon that project in a radial direction from the outer circumferential surface, the projections being inserted into grooves of said body.

Abstract: A compression mechanism is provided with a first relief port opening only to a first compression chamber, a second relief port opening only to a second compression chamber, and a third relief port which can open to both of the first compression chamber and the second compression chamber.

Abstract: An automatic speed reduction ratio switching apparatus is equipped with a sun gear connected to an input shaft, first and second carriers connected to a feed screw shaft, planetary gears meshed with the sun gear and which are mounted rotatably in the first and second carriers, and an internal gear meshed with the planetary gears and which is capable of movement in an axial direction. A packing member is arranged between the internal gear and the second carrier, for regulating movement in the axial direction of the internal gear, while enabling movement of the internal gear in the axial direction when a thrust force is applied at or above a predetermined value.